Semiconductor unit, battery unit, and vehicle

    公开(公告)号:US12128772B2

    公开(公告)日:2024-10-29

    申请号:US17288825

    申请日:2019-10-30

    申请人: ROHM CO., LTD.

    摘要: A semiconductor unit is arranged between a motor and an inverter circuit that controls the motor. The semiconductor unit includes a transistor and a controller. The transistor is arranged between the inverter circuit and a positive electrode of a battery that supplies power to the inverter circuit, and controls supplying of power from the battery to the inverter circuit. The controller is connected to a control terminal of the transistor, and controls a control voltage that is a voltage applied to the control terminal. When power starts to be supplied from the battery to the inverter circuit, the controller controls the control voltage to intermittently operate the transistor and also decreases the control voltage, which is applied to the control terminal of the transistor, to be lower than the control voltage at which the transistor is fully activated.

    HIGH VOLTAGE PRE-PULSING
    4.
    发明申请

    公开(公告)号:US20220224317A1

    公开(公告)日:2022-07-14

    申请号:US17707902

    申请日:2022-03-29

    摘要: Some embodiments of the invention include a pre-pulse switching system. The pre-pulsing switching system may include: a power source configured to provide a voltage greater than 100 V; a pre-pulse switch coupled with the power source and configured to provide a pre-pulse having a pulse width of Tpp; and a main switch coupled with the power source and configured to provide a main pulse such that an output pulse comprises a single pulse with negligible ringing. The pre-pulse may be provided to a load by closing the pre-pulse switch while the main switch is open. The main pulse may be provided to the load by closing the main switch after a delay Tdelay after the pre-pulse switch has been opened.

    HIGH VOLTAGE RESISTIVE OUTPUT STAGE CIRCUIT

    公开(公告)号:US20210066042A1

    公开(公告)日:2021-03-04

    申请号:US17098207

    申请日:2020-11-13

    摘要: Some embodiments include a high voltage, high frequency switching circuit. The switching circuit may include a high voltage switching power supply that produces pulses having a voltage greater than 1 kV and with frequencies greater than 10 kHz and an output. The switching circuit may also include a resistive output stage electrically coupled in parallel with the output and between the output stage and the high voltage switching power supply, the resistive output stage comprising at least one resistor that discharges a load coupled with the output. In some embodiments, the resistive output stage may be configured to discharge over about 1 kilowatt of average power during each pulse cycle. In some embodiments, the output can produce a high voltage pulse having a voltage greater than 1 kV and with frequencies greater than 10 kHz with a pulse fall time less than about 400 ns.

    High-voltage generator for providing a high-voltage pulse

    公开(公告)号:US10692682B1

    公开(公告)日:2020-06-23

    申请号:US16704026

    申请日:2019-12-05

    IPC分类号: H01J25/50 H03K3/53 H01J23/34

    摘要: A high-voltage generator provides a high-voltage pulse including a plurality of energy storage cells, each including two input and two output terminals and a capacitor. A controllable switching element is connected to the input terminals and plus terminals and minus terminals are electrically connected to one another via a respective diode. The high-voltage generator further includes a series connection comprising the energy storage cells, a pulse transformer, and a charging terminal for charging the capacitors. In an embodiment, the high-voltage generator is developed so that a greater pulse rate can be achieved. In an embodiment, at least a respective one of the energy storage cells includes an electrical resistance, connected in series with the diode connecting the plus terminals of the respective energy storage cell.

    Data latch circuit and pulse signal generator thereof

    公开(公告)号:US10339986B1

    公开(公告)日:2019-07-02

    申请号:US16162394

    申请日:2018-10-17

    摘要: A data latch circuit and a pulse signal generator thereof are provided. The pulse signal generator includes a first buffer, a second buffer, a pull-up switch and an output buffer. The first buffer generates a first buffering signal according to an input signal and a feedback signal. The second buffer generates a second buffering signal according to the input signal and the first buffering signal. The pull-up switch pulls up the second buffering signal according to the first buffering signal. The output buffer generates at least one output pulse signal according to the second buffering signal. The output buffer further outputs the at least one output pulse signal to the first buffer to be the feedback signal.

    SEMICONDUCTOR DEVICE AND CONTROL METHOD OF THE SAME

    公开(公告)号:US20180358973A1

    公开(公告)日:2018-12-13

    申请号:US15950968

    申请日:2018-04-11

    IPC分类号: H03L7/099 H03K3/53 H03L1/02

    摘要: Increases of circuit scale and power consumption are suppressed while frequency deviation is kept within a predetermined allowable range. A semiconductor device according to an embodiment includes a variable load capacity circuit including a plurality of load capacity elements coupled in parallel to one end of a crystal resonator and a plurality of switches that are respectively serially coupled to the load capacity elements, and a switch control unit that controls ON/OFF of the switches on the basis of information to be an index of frequency deviation due to temperature change of a frequency signal obtained by oscillating the crystal resonator. The switch control unit changes the number of switches that will be turned ON among the plurality of switches so that an absolute value of the frequency deviation becomes small when the information is not included in a predetermined allowable range.