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    Semiconductor unit, semiconductor device, battery unit, and vehicle
    1.
    发明授权
    Semiconductor unit, semiconductor device, battery unit, and vehicle 有权

    公开(公告)号：US11909329B2

    公开(公告)日：2024-02-20

    申请号：US17288827

    申请日：2019-10-30

    申请人： ROHM CO., LTD.

    发明人： Mineo Miura ,  Masashi Hayashiguchi ,  Jun Terada

    IPC分类号： H02M7/537 ,  H02H7/12 ,  H02M1/32 ,  H03K17/08

    CPC分类号： H02M7/537 ,  H02H7/12 ,  H02M1/32 ,  H03K17/08

    摘要： A semiconductor unit includes a semiconductor device, a controller, and a resistor. The semiconductor device includes a transistor arranged between a positive electrode of a battery and an inverter circuit electrically connected to the battery. The controller is connected to a control terminal of the transistor and configured to control the transistor. The resistor arranged between the control terminal and the controller. The controller controls the transistor so that when a current flowing to the transistor is greater than or equal to a threshold value, the transistor is deactivated. The resistor has a resistance value that is greater than or equal to 100 Ω.

    Semiconductor device
    4.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09472688B2

    公开(公告)日：2016-10-18

    申请号：US14655658

    申请日：2013-12-25

    申请人： ROHM CO., LTD.

    发明人： Masatoshi Aketa ,  Mineo Miura

    IPC分类号： H01L29/872 ,  H01L29/861 ,  H01L29/66 ,  H01L29/06 ,  H01L29/16 ,  H01L29/20 ,  H01L29/36 ,  H01L29/24

    CPC分类号： H01L29/872 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/36 ,  H01L29/6606 ,  H01L29/6609 ,  H01L29/66143 ,  H01L29/861

    摘要： A semiconductor device according to the present invention includes a semiconductor layer, a trench formed selectively in an obverse surface portion of the semiconductor layer and defining a unit cell of predetermined shape in the obverse surface portion, a second conductivity type layer formed to conform to a portion or an entirety of an inner surface of the trench, an obverse surface layer of a first conductivity type formed so as to be exposed from an obverse surface of the semiconductor layer in the unit cell, a reverse surface layer of the first conductivity type formed so as to be exposed from a reverse surface of the semiconductor layer, a drift layer of the first conductivity type formed between the obverse surface layer and the reverse surface layer of the semiconductor layer and being of lower concentration than the obverse surface layer and the reverse surface layer, a first electrode contacting the obverse surface layer and forming an ohmic contact with the obverse surface layer, and a second electrode contacting the reverse surface layer and forming an ohmic contact with the reverse surface layer.

    摘要翻译： 根据本发明的半导体器件包括半导体层，选择性地形成在半导体层的正面部分中并且在正面部分中限定预定形状的单元电池的沟槽，形成为符合 所述沟槽的内表面的一部分或全部，形成为从所述单元电池中的所述半导体层的正面暴露的第一导电类型的正面层，形成所述第一导电类型的反面层 以便从半导体层的反面暴露出第一导电类型的漂移层，其形成在半导体层的正面层和反面层之间，并且具有比正面层和反面的低的浓度 表面层，与正面表面层接触并与正面l形成欧姆接触的第一电极 以及与反面层接触并与反面层形成欧姆接触的第二电极。

    Silicon carbide semiconductor device and method for producing the same
    5.
    发明授权
    Silicon carbide semiconductor device and method for producing the same 有权
    碳化硅半导体器件及其制造方法

    公开(公告)号：US08722497B2

    公开(公告)日：2014-05-13

    申请号：US13953704

    申请日：2013-07-29

    申请人： Nissan Motor Co., Ltd. ,  Rohm Co., Ltd.

    发明人： Satoshi Tanimoto ,  Noriaki Kawamoto ,  Takayuki Kitou ,  Mineo Miura

    IPC分类号： H01L29/24

    CPC分类号： H01L29/66068 ,  H01L21/049 ,  H01L21/31666 ,  H01L29/1608 ,  H01L29/513 ,  H01L29/518 ,  H01L29/7395 ,  H01L29/7802

    摘要： A silicon carbide semiconductor device (90), includes: 1) a silicon carbide substrate (1); 2) a gate electrode (7) made of polycrystalline silicon; and 3) an ONO insulating film (9) sandwiched between the silicon carbide substrate (1) and the gate electrode (7) to thereby form a gate structure, the ONO insulating film (9) including the followings formed sequentially from the silicon carbide substrate (1): a) a first oxide silicon film (O) (10), b) an SiN film (N) (11), and c) an SiN thermally-oxidized film (O) (12, 12a, 12b). Nitrogen is included in at least one of the following places: i) in the first oxide silicon film (O) (10) and in a vicinity of the silicon carbide substrate (1), and ii) in an interface between the silicon carbide substrate (1) and the first oxide silicon film (O) (10).

    摘要翻译： 碳化硅半导体器件（90）包括：1）碳化硅衬底（1）; 2）由多晶硅制成的栅电极（7） 和3）夹在所述碳化硅衬底（1）和所述栅电极（7）之间的ONO绝缘膜（9），从而形成栅极结构，所述ONO绝缘膜（9）包括从所述碳化硅衬底 （1）：a）第一氧化硅膜（O）（10），b）SiN膜（N）（11），和c）SiN热氧化膜（O）（12,12a，12b）。 氮在以下位置中的至少一个中包括：i）在第一氧化物硅膜（O）（10）中和在碳化硅衬底（1）附近，以及ii）在碳化硅衬底 （1）和第一氧化硅膜（O）（10）。

    Semiconductor unit, battery unit, and vehicle
    6.
    发明授权
    Semiconductor unit, battery unit, and vehicle 有权

    公开(公告)号：US12128772B2

    公开(公告)日：2024-10-29

    申请号：US17288825

    申请日：2019-10-30

    申请人： ROHM CO., LTD.

    发明人： Mineo Miura ,  Masashi Hayashiguchi

    IPC分类号： B60L3/00 ,  B60L50/51 ,  H02H9/02 ,  H02M1/08 ,  H02M1/32 ,  H03K3/53

    CPC分类号： B60L3/003 ,  B60L50/51 ,  H02H9/02 ,  H02M1/08 ,  H02M1/32 ,  H03K3/53 ,  B60L2270/20

    摘要： A semiconductor unit is arranged between a motor and an inverter circuit that controls the motor. The semiconductor unit includes a transistor and a controller. The transistor is arranged between the inverter circuit and a positive electrode of a battery that supplies power to the inverter circuit, and controls supplying of power from the battery to the inverter circuit. The controller is connected to a control terminal of the transistor, and controls a control voltage that is a voltage applied to the control terminal. When power starts to be supplied from the battery to the inverter circuit, the controller controls the control voltage to intermittently operate the transistor and also decreases the control voltage, which is applied to the control terminal of the transistor, to be lower than the control voltage at which the transistor is fully activated.

    Electronic circuit
    8.
    发明授权
    Electronic circuit 有权
    电子电路

    公开(公告)号：US09461533B2

    公开(公告)日：2016-10-04

    申请号：US14439184

    申请日：2013-10-30

    申请人： ROHM CO., LTD.

    发明人： Masashi Hayashiguchi ,  Mineo Miura ,  Kazuhide Ino

    IPC分类号： H02M1/32 ,  H03K17/082 ,  H03K17/12 ,  H03K17/16 ,  H02M7/217 ,  H03K17/0412 ,  H03K17/0812 ,  H02H7/122 ,  H02M7/5387 ,  H02M1/088

    CPC分类号： H02M1/32 ,  H02M1/088 ,  H02M7/217 ,  H03K17/04123 ,  H03K17/08122 ,  H03K17/0822 ,  H03K17/122 ,  H03K17/163 ,  H03K2217/0045

    摘要： When an overcurrent is detected by an overcurrent detecting circuit (36), a first switch circuit (32) selects a second input terminal (b) and connects an output terminal (c) to the second input terminal (b), with the result that the output terminal (c) of the first switch circuit (32) is put into a high-impedance state. The second switch circuit (34) selects a second output terminal (f) and connects an input terminal (d) to the second output terminal (f), with the result that the input terminal (d) of the second switch circuit (34) is grounded. That is, the gate of a first MOSFET (21) is grounded via a current interrupting resistor (35). The resistance value of the current interrupting resistor (35) is set so that, at the time of a current interruption, a time interval from a time when the gate-source voltage or gate-emitter voltage of the switching device lowers to such a voltage that the temperature characteristics of the on-resistance of the switching device become negative to a time when the drain current or collector current of the switching device reaches 2% of the saturation current thereof is 500 [nsec] or less.

    摘要翻译： 当过电流检测电路（36）检测到过电流时，第一开关电路（32）选择第二输入端子（b）并将输出端子（c）连接到第二输入端子（b），结果是 第一开关电路（32）的输出端（c）处于高阻态。 第二开关电路（34）选择第二输出端子（f）并将输入端子（d）连接到第二输出端子（f），结果是第二开关电路（34）的输入端子（d） 接地。 也就是说，第一MOSFET（21）的栅极通过电流中断电阻（35）接地。 电流中断电阻器（35）的电阻值被设定为使得在电流中断时，从切换装置的栅极 - 源极电压或栅极 - 发射极间电压降低到这样的电压的时间间隔 开关器件的导通电阻的温度特性在开关器件的漏极电流或集电极电流达到其饱和电流的2％为500 [nsec]以下的时刻变为负。

    Semiconductor device
    9.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08901571B2

    公开(公告)日：2014-12-02

    申请号：US14010567

    申请日：2013-08-27

    申请人： Rohm Co., Ltd.

    发明人： Yuki Nakano ,  Shuhei Mitani ,  Mineo Miura

    IPC分类号： H01L31/0312 ,  H01L29/10 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H01L29/45 ,  H01L29/04 ,  H01L29/423

    CPC分类号： H01L29/7816 ,  H01L29/045 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7811 ,  H01L29/7813

    摘要： A semiconductor device including a semiconductor layer of a first conductivity type; a plurality of body regions of a second conductivity type; source regions of the first conductivity type, formed on a surface layer part of each body region and spaced away from the edges of each body region; a gate insulating film formed on the semiconductor layer; and gate electrodes formed on the gate insulating film. In the semiconductor layer, trenches extending between two neighboring source regions are formed, the inside surface of the trenches are covered by a gate insulating film, and the gate electrodes comprise surface-facing parts, which are buried in the trenches.

    摘要翻译： 一种半导体器件，包括第一导电类型的半导体层; 多个第二导电类型的身体区域; 源区域，形成在每个主体区域的表面层部分上并与每个身体区域的边缘分开; 形成在所述半导体层上的栅极绝缘膜; 以及形成在栅极绝缘膜上的栅电极。 在半导体层中，形成在两个相邻源极区之间延伸的沟槽，沟槽的内表面被栅极绝缘膜覆盖，并且栅极电极包括埋入沟槽中的面向表面的部分。