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    EFFICIENT ENERGY RECOVERY IN A NANOSECOND PULSER CIRCUIT
    1.
    发明公开
    EFFICIENT ENERGY RECOVERY IN A NANOSECOND PULSER CIRCUIT 审中-公开

    公开(公告)号：US20240304417A1

    公开(公告)日：2024-09-12

    申请号：US18413975

    申请日：2024-01-16

    申请人： Eagle Harbor Technologies, Inc.

    发明人： James Prager ,  Timothy Ziemba ,  Kenneth Miller ,  Ilia Slobodov ,  Morgan Quinley

    IPC分类号： H01J37/32 ,  H01L21/683

    CPC分类号： H01J37/32146 ,  H01J37/32091 ,  H01J37/32128 ,  H01J37/32174 ,  H01J37/32715 ,  H01L21/6833

    摘要： Some embodiments include a nanosecond pulser circuit. In some embodiments, a nanosecond pulser circuit may include: a high voltage power supply; a nanosecond pulser electrically coupled with the high voltage power supply and switches voltage from the high voltage power supply at high frequencies; a transformer having a primary side and a secondary side, the nanosecond pulser electrically coupled with the primary side of the transformer; and an energy recovery circuit electrically coupled with the secondary side of the transformer. In some embodiments, the energy recovery circuit comprises: an inductor electrically coupled with the high voltage power supply; a crowbar diode arranged in parallel with the secondary side of the transformer; and a second diode disposed in series with the inductor and arranged to conduct current from a load to the high voltage power supply.

    Spatially variable wafer bias power system
    8.
    发明授权
    Spatially variable wafer bias power system 有权

    公开(公告)号：US11551908B2

    公开(公告)日：2023-01-10

    申请号：US17359498

    申请日：2021-06-25

    申请人： Eagle Harbor Technologies, Inc.

    发明人： Timothy Ziemba ,  Ilia Slobodov ,  John Carscadden ,  Kenneth Miller ,  James Prager

    IPC分类号： H01J37/32 ,  H01L21/683 ,  H01L21/687 ,  H02M3/335 ,  H03K3/57 ,  H05K7/20 ,  H03M1/12

    摘要： A plasma deposition system comprising a wafer platform, a second electrode, a first electrode, a first high voltage pulser, and a second high voltage pulser. In some embodiments, the second electrode may be disposed proximate with the wafer platform. In some embodiments, the second electrode can include a disc shape with a central aperture; a central axis, an aperture diameter, and an outer diameter. In some embodiments, the first electrode may be disposed proximate with the wafer platform and within the central aperture of the second electrode. In some embodiments, the first electrode can include a disc shape, a central axis, and an outer diameter. In some embodiments, the first high voltage pulser can be electrically coupled with the first electrode. In some embodiments, the second high voltage pulser can be electrically coupled with the second electrode.

    HIGH VOLTAGE NANOSECOND PULSER WITH VARIABLE PULSE WIDTH AND PULSE REPETITION FREQUENCY
    10.
    发明申请
    HIGH VOLTAGE NANOSECOND PULSER WITH VARIABLE PULSE WIDTH AND PULSE REPETITION FREQUENCY 有权

    公开(公告)号：US20210351767A1

    公开(公告)日：2021-11-11

    申请号：US17223004

    申请日：2021-04-06

    申请人： Eagle Harbor Technologies, Inc.

    发明人： James R. Prager ,  Timothy M. Ziemba ,  Kenneth E. Miller ,  John G. Carscadden ,  Ilia Slobodov

    IPC分类号： H03K3/57 ,  H03K17/00 ,  H03K17/56

    摘要： A nanosecond pulser is disclosed. In some embodiments, the nanosecond pulser may include one or more switch circuits including one or more solid state switches, a transformer, and an output. In some embodiments, the transformer may include a first transformer core, a first primary winding wound at least partially around a portion of the first transformer core, and a secondary winding wound at least partially around a portion of the first transformer core. In some embodiments, each of the one or more switch circuits are coupled with at least a portion of the first primary winding. In some embodiments, the output may be electrically coupled with the secondary winding and outputs electrical pulses having a peak voltage greater than about 1 kilovolt and a rise time of less than 150 nanoseconds or less than 50 nanoseconds.