Abstract:
A ceramic heater for evenly heating a semiconductor wafer while preventing a short-circuit of a resistance heater, characterized in that an insulating layer having a volume resistivity higher than that of a ceramic substrate of the ceramic heater is formed on at least part of the surface of the ceramic substrate and a resistance heater is formed on the insulating layer.
Abstract:
A ceramic substrate including therein a conductor layer, having an excellent even temperature distribution and an excellent heat-impact resistance and chucked by a strong chucking force when electrostatic chuck is used, characterized in that the cross section of the edge of the conductor layer has a shape of a pointed head.
Abstract:
A ceramic board so designed that a practically uniform temperature distribution can be imparted to its surface for processing a semiconductor wafer on the ceramic board. The ceramic board for semiconductor production and inspection devices is a ceramic board having a conductor on the surface or in the interior of the ceramic board, characterized in that the ceramic board contains oxygen and is in the form of a disk whose diameter exceeds 250 mm and whose thickness is 25 mm or less.
Abstract:
A hot plate unit (1) capable of being cooled in short time without complicating a structure and increasing a size, comprising a hot plate (3) disposed at an opening part (4) of a casing (2A) and having resistance bodies (10), wherein a space (S1) allowing air to be passed there through is formed of the casing (2A) and the hot plate (3), and an inner bottom plate (41) is provided inside the casing (2A).
Abstract:
The invention provides a ceramic heater superior in the uniformity of temperature using a heater substrate made of high-heat-conductivity ceramic. A discoid ceramic heater (100) has circular heater patterns (2) of substantially equal width formed on or in the surface of a ceramic substrate (1).
Abstract:
A hot plate comprising a conductive pattern layer having little blisters and excellent adhesion. The hot plate (3) includes conductive pattern layers (10, 10a) provided on a nitride ceramic substrate (9) and made of bismuth, a bismuth oxide, glass frit, and noble metal particles.
Abstract:
A hot plate capable of uniformly heating objects, characterized in that a resistor having a thickness variation of +/- 3 mu m is formed on an insulator board.
Abstract:
A hot plate having a conductor pattern layer in which few blister is formed and which has a good adhesion and a large resistivity. The hot plate (3) comprises a nitride ceramic base (9) having thereon conductor pattern layers (10, 10a). The conductor pattern layers (10, 10a) are made of ruthenium oxide, bismuth or its oxide, glass frit, and particles of noble metal.