Abstract:
본 발명은 탄소 발열 모듈 및 이를 이용한 탄소 발열 튀김기를 제시한다. 본 발명에 따른 탄소 발열 모듈은, 본체; 본체에 마련되어 본체의 내부를 격리된 복수의 공간부로 구획하는 구획 도전부; 복수의 공간부에 각각 마련되어 본체의 내부에 수용되며 구획 도전부를 통해 공급되는 전원에 의해 발열되는 탄소 발열 블록을 포함하여 구성된다.
Abstract:
Die Erfindung geht aus von einer Kochfeldvorrichtung (10), insbesondere einer Induktionskochfeldvorrichtung, mit zumindest einer Heizanordnung (26), die zumindest zwei Heizelemente (12) aufweist, die nebeneinander angeordnet und zumindest zu einem Erhitzen von aufgestelltem Gargeschirr (14) vorgesehen sind, und mit zumindest einer Steuereinheit (16). Um eine gattungsgemäße Vorrichtung mit verbesserten Eigenschaften hinsichtlich eines hohen Komforts für einen Bediener bereitzustellen, wird vorgeschlagen, dass die Steuereinheit (16) dazu vorgesehen ist, zumindest in einem Betriebsmodus in Abhängigkeit von einer Größe zumindest eines aufgestellten Gargeschirrs (14) eine Anzahl an virtuellen Heizzonen (18) mit unterschiedlicher Heizleistungsdichte festzulegen, wobei die virtuellen Heizzonen (18) von nebeneinander angeordneten Heizelementen (12) gebildet sind, die von ihrer Anzahl und/oder Größe zu einem Betreiben des Gargeschirrs (14) geeignet sind.
Abstract:
The present invention relates to an illumination device (20) for a cooking zone element (10) provided for a cooking hob covered by a transparent panel. The illumination device (20) is provided for a cooking zone element (10) with a central cutout (40) in a central portion of said cooking zone element (10). The illumination device (20) includes at least one diffuser screen (14) arranged or arrangeable in an upper portion of the central cutout (40) of the cooking zone element (10) and parallel to the transparent panel of the cooking hob. The illumination device (20) includes at least one light source element (30) arranged or arrangeable below the central cutout (40) of the cooking zone element (10). The illumination device (20) includes an optical lens (28) enclosing an upper portion of the light source element (30). Further, the present invention relates to a corresponding cooking zone element and cooking hob.
Abstract:
A reaction chamber including a substrate supporting member positioned within the reaction chamber, the reaction chamber having a first region and a second region, a shield positioned within the second chamber and movable with the substrate supporting member, and wherein the shield is adjacent at least a bottom surface of the substrate supporting member.
Abstract:
Abstract A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar heater zone includes one or more heater elements made of an insulator-conductor composite. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic sheets having planar heater zones, power supply lines, power return lines and vias.
Abstract:
An open-air cooking apparatus for cooking pizza and the like, includes a horizontal, rotatable, circular turntable cooking surface (4), sized to support and cook several items simultaneously. The turntable (4) should preferably structured to provide constant, even heat throughout its surface. As the oven is open-air, the cooking of the items will be primarily conduction of heat from the surface of the turntable through the bottom of the item. As the items rotate, they will pass under a static radiant heat source (28) located above the turntable. The radiant heat source will thus direct heat towards the top of the item only periodically, i.e. at one point per rotation. This allows the item, such as a pizza, to cook thoroughly from below by way of the cooking surface, while cooking and/or browning the top portion at a different, desired degree.
Abstract:
A thermal processor is adapted for annealing substrates. The processor has a sealed process chamber. Air is excluded from the process chamber during processing to avoid oxidation of substrate surfaces, such as copper surfaces. The substrate temperature is controlled by selectively positioning the substrate between a hot plate and a cold plate operating at steady state conditions. During loading and/or unloading, the air flow is induced over the substrate. This keeps the substrate at a temperature low enough to avoid oxidation, even though the heater may remain on.