公开(公告)号：WO2020141140A1

公开(公告)日：2020-07-09

申请号：PCT/EP2019/087015

申请日：2019-12-24

Applicant: ASML NETHERLANDS B.V.

Inventor： MATHIJSSEN, Simon, Gijsbert, Josephus ,  NOOT, Marc, Johannes ,  BHATTACHARYYA, Kaustuve ,  DEN BOEF, Arie, Jeffrey ,  GRZELA, Grzegorz ,  DAVIS, Timothy, Dugan ,  ZWIER, Olger, Victor ,  HUIJGEN, Ralph, Timotheus ,  ENGBLOM, Peter, David ,  GEMMINK, Jan-Willem

IPC: G03F7/20 ,  G06T5/00 ,  G06T5/50

Abstract: A method provides the steps of receiving an image from a metrology tool, determining individual units of said image and discriminating the units which provide accurate metrology values. The images are obtained by measuring the metrology target at multiple wavelengths. The discrimination between the units, when these units are pixels in said image, is based on calculating a degree of similarity between said units.

公开(公告)号：WO2020141092A1

公开(公告)日：2020-07-09

申请号：PCT/EP2019/086466

申请日：2019-12-19

Applicant: ASML NETHERLANDS B.V.

Inventor： PU, Lingling ,  FANG, Wei ,  CHEN, Zhong-wei

IPC: G03F7/20

Abstract: Systems and methods for in-die metrology using target design patterns are provided. These systems and methods include selecting a target design pattern based on design data representing the design of an integrated circuit, providing design data indicative of the target design pattern to enable design data derived from the target design pattern to be added to second design data, wherein the second design data is based on the first design data. Systems and methods can further include causing structures derived from the second design data to be printed on a wafer, inspecting the structures on the wafer using a charged-particle beam tool, and identifying metrology data or process defects based on the inspection. In some embodiments the systems and methods further include causing the charged-particle beam tool, the second design data, a scanner, or photolithography equipment to be adjusted based on the identified metrology data or process defects.

公开(公告)号：WO2020141091A2

公开(公告)日：2020-07-09

申请号：PCT/EP2019/086461

申请日：2019-12-19

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DER TOORN, Jan-Gerard, Cornelis ,  CHEN, Zhong-wei

IPC: H01J37/22 ,  H01J37/09 ,  H01J2237/0262 ,  H01J2237/2817 ,  H01J37/226

Abstract: A charged particle inspection system may include a shielding plate having an aperture or more than one aperture, for example, to permit additional inspection by an additional instrument requiring a line of sight to the area of interest. A field shaping element, such as a window element or a raised rim, is placed at the aperture to prevent or reduce a component of an electric field.

公开(公告)号：WO2020141031A1

公开(公告)日：2020-07-09

申请号：PCT/EP2019/082625

申请日：2019-11-26

Applicant: ASML NETHERLANDS B.V.

Inventor： REN, Weiming ,  ZHANG, Qian ,  HU, Xuerang ,  LIU, Xuedong

IPC: H01J37/147

Abstract: A micro-structure deflector array (622) is disclosed. The micro-structure deflector array includes a plurality of multipole structures (622-1 to 622-47). The micro-deflector deflector array comprises a first multipole structure (622-26,..., 622-47) having a first radial shift from a central axis of the array and a second multipole structure (622-1) having a second radial shift from the central axis of the array. The first radial shift is larger than the second radial shift, and the first multipole structure comprises a greater number of pole electrodes than the second multipole structure to reduce deflection aberrations when the plurality of multipole structures deflects a plurality of charged particle beams. The micro-structure deflector array may be included in an improved source conversion unit of a multi-beam inspection apparatus.

公开(公告)号：WO2020136044A2

公开(公告)日：2020-07-02

申请号：PCT/EP2019/085706

申请日：2019-12-17

Applicant: ASML NETHERLANDS B.V.

Inventor： BLEEKER, Arno, Jan ,  DE JAGER, Pieter, Willem, Herman ,  GOOSEN, Maikel, Robert ,  SMAKMAN, Erwin, Paul ,  MANGNUS, Albertus, Victor, Gerardus ,  REN, Yan ,  LASSISE, Adam

IPC: H01J37/147 ,  H01J37/26 ,  H01J37/04

Abstract: Apparatuses and methods for charged-particle detection may include a deflector system configured to direct charged-particle pulses, a detector having a detection element configured to detect the charged-particle pulses, and a controller having a circuitry configured to control the deflector system to direct a first and second charged-particle pulses to the detection element; obtain first and second timestamps associated with when the first charged-particle pulse is directed by the deflector system and detected by the detection element, respectively, and third and fourth timestamps associated with when the second charged-particle pulse is directed by the deflector system and detected by the detection element, respectively; and identify a first and second exiting beams based on the first and second timestamps, and the third and fourth timestamps, respectively.

公开(公告)号：WO2020126266A1

公开(公告)日：2020-06-25

申请号：PCT/EP2019/081887

申请日：2019-11-20

Applicant: ASML NETHERLANDS B.V.

Inventor： SOKOLOV, Sergei ,  TARABRIN, Sergey ,  CHENG, Su-Ting ,  KOOLEN, Armand, Eugene, Albert ,  EURLINGS, Markus, Franciscus, Antonius ,  SCHREEL, Koenraad, Remi, André, Maria

IPC: G03F7/20

Abstract: The disclosure relates to measuring a parameter of a patterning process. In one arrangement, a target, formed by the patterning process, is illuminated. A sub-order diffraction component of radiation scattered from the target is detected and used to determine the parameter of the patterning process.

公开(公告)号：WO2020114752A1

公开(公告)日：2020-06-11

申请号：PCT/EP2019/081426

申请日：2019-11-15

Applicant: ASML NETHERLANDS B.V.

Inventor： KOOIMAN, Marleen

IPC: G03F7/20

Abstract: A method of reducing variability of an error associated with a structure on a wafer in a lithography process is disclosed. The method includes determining, based on an image (or images) obtained based on a scan of the wafer by a scanning electron microscope (SEM), a first error due to a SEM distortion in the image. The method also includes determining, based on the image, a second error associated with a real error of the structure, where the error associated with the structure comprises the first error and the second error. A command is generated by a data processor that enables a modification of the lithography process and an associated reduction of the variability of the error based on reducing any of the first error or the second error.

公开(公告)号：WO2020114692A1

公开(公告)日：2020-06-11

申请号：PCT/EP2019/080129

申请日：2019-11-04

Applicant: ASML NETHERLANDS B.V.

Inventor： LIN, Chenxi ,  TABERY, Cyrus, Emil ,  CEKLI, Hakki, Ergun ,  HASTINGS, Simon, Philip, Spencer ,  MENCHTCHIKOV, Boris ,  ZOU, Yi ,  CHENG, Yana ,  GENIN, Maxime, Philippe, Frederic ,  CHEN, Tzu-Chao ,  HARUTYUNYAN, Davit ,  ZHANG, Youping

IPC: G03F7/20 ,  H01L21/66

Abstract: Described is a method for determining a root cause affecting yield in a process for manufacturing devices on a substrate, the method comprising; obtaining yield distribution data comprising the distribution of a yield parameter across the substrate or part thereof; obtaining sets of metrology data, each set comprising a spatial variation of a process parameter over the substrate or part thereof corresponding to a different layer of the substrate; comparing the yield distribution data and metrology data based on a similarity metric describing a spatial similarity between the yield distribution data and an individual set out of the sets of the metrology data; and determining a first similar set of metrology data out of the sets of metrology data, being the first set of metrology data in terms of processing order for the corresponding layers, which is determined to be similar to the yield distribution data.

公开(公告)号：WO2020099095A1

公开(公告)日：2020-05-22

申请号：PCT/EP2019/079076

申请日：2019-10-24

Applicant: ASML NETHERLANDS B.V.

Inventor： REN, Weiming ,  LIU, Xuedong ,  HU, Xuerang ,  CHEN, Zhongwei

IPC: H01J37/145 ,  H01J37/28 ,  H01J37/143

Abstract: An electromagnetic compound lens may be configured to focus a charged particle beam. The compound lens may include an electrostatic lens provided on a secondary optical axis and a magnetic lens also provided on the secondary optical axis. The magnetic lens may include a permanent magnet. A charged particle optical system may include a beam separator configured to separate a plurality of beamlets of a primary charged particle beam generated by a source along a primary optical axis from secondary beams of secondary charged particles. The system may include a secondary imaging system configured to focus the secondary beams onto a detector along the secondary optical axis. The secondary imaging system may include the compound lens.

公开(公告)号：WO2020094286A1

公开(公告)日：2020-05-14

申请号：PCT/EP2019/075531

申请日：2019-09-23

Applicant: ASML NETHERLANDS B.V.

Inventor： TEL, Wim, Tjibbo ,  KIERS, Antoine, Gaston, Marie ,  TIMOSHKOV, Vadim Yourievich ,  DILLEN, Hermanus, Adrianus ,  ZHANG, Yichen ,  WANG, Te-Sheng ,  CHEN, Tzu-Chao

IPC: G03F7/20

Abstract: Disclosed herein is a method for determining an image-metric of features on a substrate, the method comprising: obtaining a first image of a plurality of features on a substrate; obtaining one or more further images of a corresponding plurality of features on the substrate, wherein at least one of the one or more further images is of a different layer of the substrate than the first image; generating aligned versions of the first and one or more further images by performing an alignment process on the first and one or more further images; and calculating an image-metric in dependence on a comparison of the features in the aligned version of the first image and the corresponding features in the aligned versions of the one or more further images.