公开(公告)号：WO2015195080A1

公开(公告)日：2015-12-23

申请号：PCT/US2014/042568

申请日：2014-06-16

Applicant: INTEL CORPORATION ,  ROBERTS, Jeanette A. ,  ROMERO, Patricio E. ,  CLENDENNING, Scott B. ,  JEZEWSKI, Christopher J. ,  CHEBIAM , Ramanan V.

Inventor： ROBERTS, Jeanette A. ,  ROMERO, Patricio E. ,  CLENDENNING, Scott B. ,  JEZEWSKI, Christopher J. ,  CHEBIAM , Ramanan V.

IPC: H01L21/38 ,  H01L21/31 ,  H01L21/205

CPC classification number: H01L23/53238 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/288 ,  H01L21/3215 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76855 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53209 ,  H01L24/17 ,  H01L25/105 ,  H01L2224/16225 ,  H01L2924/0002 ,  H01L2924/15311 ,  H05K1/181 ,  H05K2201/10734 ,  H01L2924/00

Abstract: Embodiments of the present disclosure describe a selective diffusion barrier between metals of an integrated circuit (IC) device and associated techniques and configurations. In one embodiment, an apparatus includes a dielectric material, a first interconnect structure comprising a first metal disposed in the dielectric material, a second interconnect structure comprising a second metal disposed in the dielectric material and electrically coupled with the first interconnect structure and a diffusion barrier disposed at an interface between the first interconnect structure and the second interconnect structure, wherein the first metal and the second metal have a different chemical composition, material of the diffusion barrier and the second metal have a different chemical composition and material of the diffusion barrier is not disposed directly between the second metal and the dielectric material. Other embodiments may be described and/or claimed.

Abstract translation: 本公开的实施例描述了集成电路（IC）器件的金属与相关联的技术和配置之间的选择性扩散阻挡层。 在一个实施例中，一种装置包括电介质材料，第一互连结构，包括布置在电介质材料中的第一金属，第二互连结构，包括设置在电介质材料中并与第一互连结构电耦合的第二金属和扩散阻挡层 设置在第一互连结构和第二互连结构之间的界面处，其中第一金属和第二金属具有不同的化学组成，扩散阻挡层和第二金属的材料具有不同的化学组成，并且扩散阻挡层的材料是 不直接设置在第二金属和电介质材料之间。 可以描述和/或要求保护其他实施例。

公开(公告)号：WO2013048417A1

公开(公告)日：2013-04-04

申请号：PCT/US2011/054051

申请日：2011-09-29

Applicant: INTEL CORPORATION ,  ROMERO, Patricio E. ,  CLENDENNING, Scott B.

Inventor： ROMERO, Patricio E. ,  CLENDENNING, Scott B.

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L21/28556 ,  C23C16/30 ,  C23C16/42 ,  H01L21/28506 ,  H01L21/28562 ,  H01L21/28575 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53266 ,  H01L29/04 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/161 ,  H01L29/201 ,  H01L29/42392 ,  H01L29/45 ,  H01L29/49 ,  H01L29/4916 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/51 ,  H01L29/518 ,  H01L29/66522 ,  H01L29/66568 ,  H01L29/775 ,  H01L29/78 ,  H01L29/785 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present invention provide methods for forming layers that comprise electropositive metals through ALD (atomic layer deposition) and or CVD (chemical vapor deposition) processes, layers comprising one or more electropositive metals, and semiconductor devices comprising layers comprising one or more electropositive metals. In embodiments of the invention, the layers are thin or ultrathin (films that are less than 100 Å thick) and or conformal films. Additionally provided are transistor devices, metal interconnects, and computing devices comprising metal layers comprising one or more electropositive metals.

Abstract translation: 本发明的实施方案提供了通过ALD（原子层沉积）和/或CVD（化学气相沉积）工艺形成包含正电性金属的层的方法，包括一种或多种正电性金属的层以及包含一种或多种正电性金属的层的半导体器件 。 在本发明的实施方案中，这些层是薄的或超薄的（小于100埃的膜）和/或保形膜。 另外提供的是晶体管器件，金属互连和包括包含一种或多种正电性金属的金属层的计算器件。

公开(公告)号：WO2009049114A1

公开(公告)日：2009-04-16

申请号：PCT/US2008/079450

申请日：2008-10-10

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY ,  GRUBBS, Robert H. ,  ROMERO, Patricio E.

Inventor： GRUBBS, Robert H. ,  ROMERO, Patricio E.

IPC: C07C31/18

CPC classification number: C07C29/14 ,  C07C29/38 ,  C07C45/75 ,  Y02P20/52 ,  C07C31/202 ,  C07C47/19

Abstract: The present invention provides a process for the production of a glycol via tandem self condensation of formaldehyde via formoin condensation and transfer hydrogenation of the reaction products of the formoin condensation. In some aspects, synthetic processes of the present invention utilize a combination of a N-heterocyclic carbene catalyst and a transition metal hydrogen-transfer catalyst providing enhanced selectivity and increased yields for the production of ethylene glycol relative to conventional synthetic approaches based on formoin condensation.

Abstract translation: 本发明提供了一种通过甲醛通过甲醛缩合和甲醛缩合的反应产物的转移氢化的串联自缩合来生产二醇的方法。 在一些方面，本发明的合成方法利用N-杂环卡宾催化剂和过渡金属氢转移催化剂的组合，相对于基于甲醛缩合的常规合成方法，提供增强的选择性和增加乙二醇生产的产率。