摘要:
Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, , form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices. . In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase.
摘要:
An electrical or electro-optical device (100) includes a first layer (110) having a first composition. The first composition includes a plurality of electrically connected particles. A second layer (130) has a second composition, the second composition including a plurality of electrically connected particles. A composite layer (120) is disposed between the first and second layer. The composite layer is an interpenetrated network of a third and a fourth composition, wherein the third composition is different from the fourth composition. A first electrically interconnected network extends from the first composition in the first layer (110) to the third composition throughout a thickness of the composite layer (120), and a second electrically interconnected network extends from the second composition in the second layer (130) to the fourth composition throughout the thickness of the composite layer.
摘要:
A multilayer solar cell with bypass diodes includes a stack of alternating p and n type semiconductor layers (10, 11, 12, 13, 14) arranged to form a plurality of rectifying photovoltaic junctions (15, 16, 17, 18). Contact is made to underlying layers by way of a buried contact structure comprising groves extending down through all of the active layers, the walls of each groove being doped (33, 34) with n-or p-type impurities depending upon the layers to which the respective contact is to be connected and the grooves being filled with metal contact material (31, 32). One or more bypass diodes are provided by increasing the doping levels on either side (10, 13) of one or more portions of the junctions (16) of the cell such that quantum mechanical tunnelling provides a reverse bias characteristic whereby conduction occurs under predetermined reverse bias conditions. Ideally, the doping levels in the bypass diodes is 10 atoms/cm or greater and the junction area is small.
摘要翻译:具有旁路二极管的多层太阳能电池包括布置成形成多个整流光伏结(15,16,17,18)的交替的p型和n型半导体层(10,11,12,13,14)的叠层。 通过包括沿向下延伸穿过所有有源层的沟槽的掩埋接触结构对下层进行接触,每个沟槽的壁被掺杂(33,34),其中n或p型杂质取决于层 相应的接触件将被连接并且槽被金属接触材料(31,32)填充。 一个或多个旁路二极管通过增加单元的一个或多个部分(16)的任一侧(10,13)上的掺杂水平来提供,使得量子力学隧道效应提供反向偏置特性,从而在预定的反向下发生传导 偏倚条件。 理想地,旁路二极管中的掺杂水平为10 18原子/ cm 3或更大,并且结面积小。
摘要:
The solid-state solar cell proposed is designed as a photo-injection cell and made up of a series of layers comprising a substrate on which is located a 100 to 1000 nm thick low-impedance collector layer with an electron affinity of 2 to 4 eV, followed by a 50 to 1000 nm thick quasi-insulating charge-transfer layer with anenergy gap of 2 to 4 eV and finally a high-absorbing photo-emitter layer 5 to 100 nm, preferably 5 to 50 nm, thick with an electron affinity of 3 to 5 eV. The photo-injection cell permits separate optimization of the individual layers as regards their functions of optical excitation and charge-carrier transport in the conversion of optical energy into electrical energy.
摘要:
A multilayer solar cell structure includes a stack of alternating p-type and n-type semiconductor layers (10, 11, 12, 13, 14) arranged to form a plurality of rectifying photovoltaic junctions (15, 16, 17, 18). Low-cost cells are manufactured from low-quality material which is optimized by employing very high doping levels in thin layers. Typically, the doping levels are greater than 10 atoms/cm , and the thickness of the layers is related to carrier diffusion length in thickness. Contact is made to underlying layers by way of a buried contact structure comprising grooves extending down through all of the active layers, the walls of each groove being doped (33, 34) with n- or p-type impurities depending upon the layers to which the respective contact is to be connected and the grooves being filled or partly filled with metal contact material (31, 32).
摘要翻译:多层太阳能电池结构包括交替的p型和n型半导体层(10,11,12,13,14)的堆叠,其被布置成形成多个整流光伏结(15,16,17,18)。 低成本电池由低质量材料制造,通过在薄层中采用非常高的掺杂水平进行优化。 通常,掺杂水平大于10 17个原子/ cm 3,层的厚度与厚度上的载流子扩散长度有关。 通过包括沿着所有活性层向下延伸的凹槽的掩埋接触结构对下层进行接触,每个凹槽的壁根据其上的层被掺杂(33,34),具有n型或p型杂质 相应的接触件将被连接,并且槽被填充或部分地填充有金属接触材料(31,32)。
摘要:
An amorphous silicon material and devices fabricated of two deposited layers of silicon, the two layers having opposite spin orientation. The deposition is made under the influence of a magnetic field for the first layer and the opposite magnetic field for the second layer. Apparatus suitable for forming devices according to the process of the invention comprises: (a) heating element means (20) for holding at least one substrate (55) on which the semiconductor layers are formed; (b) a first electrode (22) for forming a glow discharge; (c) a second electrode (34) for forming the glow discharge opposed to said first electrode; (d) power supply means (60) for supplying power to said first electrode and said second electrode to form said glow discharge; (e) magnetic field producing means (30) adjacent said substrate holder for producing a first magnetic field with a first orientation at said substrate holder; (f) means for reversing said magnetic field to produce a second magnetic field with a second orientation at said substrate holder; (g) a chamber (15) for holding said substrate holder, first electrode, and second electrode; (h) means (40) communicating with said chamber for forming a vacuum in said chamber; and (i) means (45) communicating with said chamber for passing a gas containing the material to be formed on the substrate into the chamber.
摘要:
A system can include at least one solar cell comprising a semiconductor material having p-n junctions formed therein; and a pulse generator electrically coupled to the solar cell and configured to apply electric pulses to dynamically alter a band gap of the semiconductor material as photons are received by the semiconductor material.
摘要:
The embodiments of the disclosure relate generally to photovoltaic devices with broad band absorption in the solar light spectrum incident to Earth. The devices include integrated layers of graphite oxide and reduced graphite oxide, which exhibit intrinsic p/n junctions, which can be self-biasing and allow for production and separation of electron-hole pairs that can drive the current in the device. Descriptions of the devices and methods of making the structures are disclosed.
摘要:
La présente invention concerne un matériau comprenant au moins un composé de formule Bi 1-x M x Cu 1-y-£ M' y OS 1-z M" z , les procédés de préparation de ce matériau et leur utilisation à titre de semi-conducteur, notamment pour application photoélectrochimique ou photochimique, en particulier pour fournir un photocourant. L'invention concerne également les dispositifs photovoltaïques qui mettent en œuvre ces composés.