光電変換装置用透明導電膜付基板、及びその製造方法、並びにそれを用いた光電変換装置
    11.
    发明申请
    光電変換装置用透明導電膜付基板、及びその製造方法、並びにそれを用いた光電変換装置 审中-公开
    用于光电转换装置的透明导电膜的基板,用于制造基板的方法和使用基板的光电转换装置

    公开(公告)号:WO2008062685A1

    公开(公告)日:2008-05-29

    申请号:PCT/JP2007/071902

    申请日:2007-11-12

    发明人: 多和田 裕子

    摘要:  光電変換装置用透明導電膜付基板の表面凹凸を効果的に増大させて光閉じ込め効果を大きくすることで、光電変換装置の性能を改善可能とする安価な光電変換装置用透明導電膜付基板、及びその製造方法を提供し、さらにその基板を用いた性能が改善された光電変換装置を提供することを課題とする。本発明の光電変換装置用透明導電膜付基板は、透光性絶縁基板とその上に堆積された少なくとも酸化亜鉛を含む透明電極層を有し、前記透明電極は基板側から第1および第2の透明導電膜を堆積した2層構造からなり、前記第1透明導電膜は平均膜厚が10~500nmであり、前記第2透明導電膜は平均膜厚が300~1500nmであり、前記第1透明導電膜の平均膜厚よりも前記第2透明導電膜の平均膜厚のほうが大きく、前記第2透明導電膜の表面の凹凸の平均高低差が10~300nmであり表面の凹凸の平均高低差が第1透明導電膜のそれよりも大きいことを特徴とする。                                                                                       

    摘要翻译: 提供一种具有用于光电转换装置的透明导电膜的低成本基板,其可以通过有效地增加基板的表面不均匀性和增加光限制效果来提高光电转换装置的性能。 还提供了一种制造这种基板的方法,以及通过使用这种基板具有改进的性能的光电转换装置。 设置有用于光电转换装置的透明导电膜的基板设置有半透明绝缘基板和至少含有沉积在基板上的氧化锌的透明电极层。 透明电极由双层结构构成,其中从衬底侧沉积第一和第二透明导电膜。 透明导电膜的平均膜厚为10〜500nm,第二透明导电膜的平均膜厚为300〜1500nm。 第二透明导电膜的平均膜厚大于第一透明导电膜的平均膜厚,第二透明导电膜的表面的凹凸的平均高差为10〜300nm,大于第一透明导电膜的平均高度差 透明导电膜。

    HIGH-THROUGHPUT PRINTING OF SEMICONDUCTOR PRECURSOR LAYER FROM INTER-METALLIC NANOFLAKE PARTICLES
    12.
    发明申请
    HIGH-THROUGHPUT PRINTING OF SEMICONDUCTOR PRECURSOR LAYER FROM INTER-METALLIC NANOFLAKE PARTICLES 审中-公开
    来自金属间纳米颗粒的半导体前驱层的高通量印刷

    公开(公告)号:WO2007101138A2

    公开(公告)日:2007-09-07

    申请号:PCT/US2007062766

    申请日:2007-02-23

    摘要: Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, , form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices. . In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase.

    摘要翻译: 提供了用于在合适的条件下在合适的载体中转化非平面或平面前体材料的方法和装置,以产生具有等于原料或前体材料的化学计量比的化学计量比的平面颗粒的分散体,即使在选择性力沉降之后。 特别地,平面颗粒更容易分散,形成更密集的涂层(或形成具有更多颗粒间接触面积的涂层),并在比球形纳米颗粒制成的对应物更低的温度和/或时间下退火成熔融的致密膜。 这些平面颗粒可以是具有高纵横比的纳米片。 由纳米片形成的致密膜特别适用于形成光电器件。 。 在一个实施方案中,油墨中的至少一组颗粒可以是含有至少一种IB-IIIA族金属间合金相的金属间薄片(微花纹或纳米薄片)。

    METHOD FOR FORMING INTERPENETRATING NETWORKS OF DISTINCT MATERIALS AND DEVICES THEREFROM
    13.
    发明申请
    METHOD FOR FORMING INTERPENETRATING NETWORKS OF DISTINCT MATERIALS AND DEVICES THEREFROM 审中-公开
    形成异质材料的互连网络的方法及其设备

    公开(公告)号:WO2007062072A1

    公开(公告)日:2007-05-31

    申请号:PCT/US2006/045118

    申请日:2006-11-21

    IPC分类号: H01L31/00

    摘要: An electrical or electro-optical device (100) includes a first layer (110) having a first composition. The first composition includes a plurality of electrically connected particles. A second layer (130) has a second composition, the second composition including a plurality of electrically connected particles. A composite layer (120) is disposed between the first and second layer. The composite layer is an interpenetrated network of a third and a fourth composition, wherein the third composition is different from the fourth composition. A first electrically interconnected network extends from the first composition in the first layer (110) to the third composition throughout a thickness of the composite layer (120), and a second electrically interconnected network extends from the second composition in the second layer (130) to the fourth composition throughout the thickness of the composite layer.

    摘要翻译: 电或电光器件(100)包括具有第一组成的第一层(110)。 第一组合物包括多个电连接的颗粒。 第二层(130)具有第二组合物,第二组合物包括多个电连接的颗粒。 复合层(120)设置在第一层和第二层之间。 复合层是第三和第四组合物的互穿网络,其中第三组合物不同于第四组合物。 第一电互连网络在复合层(120)的整个厚度上从第一层(110)中的第一组合物延伸到第三组合物,并且第二电互连网络从第二层(130)中的第二组合物延伸, 涉及复合层整个厚度的第四组合物。

    MULTILAYER SOLAR CELLS WITH BYPASS DIODE PROTECTION
    14.
    发明申请
    MULTILAYER SOLAR CELLS WITH BYPASS DIODE PROTECTION 审中-公开
    具有旁路二极管保护的多层太阳能电池

    公开(公告)号:WO1996018213A1

    公开(公告)日:1996-06-13

    申请号:PCT/AU1995000829

    申请日:1995-12-08

    IPC分类号: H01L31/06

    摘要: A multilayer solar cell with bypass diodes includes a stack of alternating p and n type semiconductor layers (10, 11, 12, 13, 14) arranged to form a plurality of rectifying photovoltaic junctions (15, 16, 17, 18). Contact is made to underlying layers by way of a buried contact structure comprising groves extending down through all of the active layers, the walls of each groove being doped (33, 34) with n-or p-type impurities depending upon the layers to which the respective contact is to be connected and the grooves being filled with metal contact material (31, 32). One or more bypass diodes are provided by increasing the doping levels on either side (10, 13) of one or more portions of the junctions (16) of the cell such that quantum mechanical tunnelling provides a reverse bias characteristic whereby conduction occurs under predetermined reverse bias conditions. Ideally, the doping levels in the bypass diodes is 10 atoms/cm or greater and the junction area is small.

    摘要翻译: 具有旁路二极管的多层太阳能电池包括布置成形成多个整流光伏结(15,16,17,18)的交替的p型和n型半导体层(10,11,12,13,14)的叠层。 通过包括沿向下延伸穿过所有有源层的沟槽的掩埋接触结构对下层进行接触,每个沟槽的壁被掺杂(33,34),其中n或p型杂质取决于层 相应的接触件将被连接并且槽被金属接触材料(31,32)填充。 一个或多个旁路二极管通过增加单元的一个或多个部分(16)的任一侧(10,13)上的掺杂水平来提供,使得量子力学隧道效应提供反向偏置特性,从而在预定的反向下发生传导 偏倚条件。 理想地,旁路二极管中的掺杂水平为10 18原子/ cm 3或更大,并且结面积小。

    SOLID-STATE SOLAR CELL
    15.
    发明申请
    SOLID-STATE SOLAR CELL 审中-公开
    固态太阳能电池

    公开(公告)号:WO1995028008A1

    公开(公告)日:1995-10-19

    申请号:PCT/DE1995000485

    申请日:1995-04-07

    IPC分类号: H01L31/06

    摘要: The solid-state solar cell proposed is designed as a photo-injection cell and made up of a series of layers comprising a substrate on which is located a 100 to 1000 nm thick low-impedance collector layer with an electron affinity of 2 to 4 eV, followed by a 50 to 1000 nm thick quasi-insulating charge-transfer layer with anenergy gap of 2 to 4 eV and finally a high-absorbing photo-emitter layer 5 to 100 nm, preferably 5 to 50 nm, thick with an electron affinity of 3 to 5 eV. The photo-injection cell permits separate optimization of the individual layers as regards their functions of optical excitation and charge-carrier transport in the conversion of optical energy into electrical energy.

    摘要翻译: 根据形成为光注入单元,并且其中的100纳米厚的基板上至1000纳米,具有低阻抗的集电极层2电子伏特至4伏特,该厚度以上的功函数,一个50纳米至1000纳米和的能隙的层序列组成的本发明的固态的太阳能电池 的具有至多4 eV的半绝缘的电荷转移层和在其上的高吸收性2 eV的,厚度为5nm至100nm,优选5nm至50nm,并且是3eV至5 eV的具有光发射极层的功函数被布置。 光电池注入允许各个层的分离的优化相对于它们的功能的光学激发和在光的能量转换的载流子的传输转换成电能。

    MULTIPLE LAYER THIN FILM SOLAR CELLS WITH BURIED CONTACTS
    16.
    发明申请
    MULTIPLE LAYER THIN FILM SOLAR CELLS WITH BURIED CONTACTS 审中-公开
    多层薄膜太阳能电池与BURIED联系

    公开(公告)号:WO1995027314A1

    公开(公告)日:1995-10-12

    申请号:PCT/AU1995000184

    申请日:1995-03-31

    IPC分类号: H01L31/0352

    摘要: A multilayer solar cell structure includes a stack of alternating p-type and n-type semiconductor layers (10, 11, 12, 13, 14) arranged to form a plurality of rectifying photovoltaic junctions (15, 16, 17, 18). Low-cost cells are manufactured from low-quality material which is optimized by employing very high doping levels in thin layers. Typically, the doping levels are greater than 10 atoms/cm , and the thickness of the layers is related to carrier diffusion length in thickness. Contact is made to underlying layers by way of a buried contact structure comprising grooves extending down through all of the active layers, the walls of each groove being doped (33, 34) with n- or p-type impurities depending upon the layers to which the respective contact is to be connected and the grooves being filled or partly filled with metal contact material (31, 32).

    摘要翻译: 多层太阳能电池结构包括交替的p型和n型半导体层(10,11,12,13,14)的堆叠,其被布置成形成多个整流光伏结(15,16,17,18)。 低成本电池由低质量材料制造,通过在薄层中采用非常高的掺杂水平进行优化。 通常,掺杂水平大于10 17个原子/ cm 3,层的厚度与厚度上的载流子扩散长度有关。 通过包括沿着所有活性层向下延伸的凹槽的掩埋接触结构对下层进行接触,每个凹槽的壁根据其上的层被掺杂(33,34),具有n型或p型杂质 相应的接触件将被连接,并且槽被填充或部分地填充有金属接触材料(31,32)。

    AN AMORPHOUS SILICON MATERIAL FABRICATED BY A MAGNETICALLY ALIGNED GLOW DISCHARGE
    17.
    发明申请
    AN AMORPHOUS SILICON MATERIAL FABRICATED BY A MAGNETICALLY ALIGNED GLOW DISCHARGE 审中-公开
    由非对称玻璃放电制成的非晶硅材料

    公开(公告)号:WO1983001710A1

    公开(公告)日:1983-05-11

    申请号:PCT/US1982001552

    申请日:1982-11-02

    IPC分类号: H01L31/06

    摘要: An amorphous silicon material and devices fabricated of two deposited layers of silicon, the two layers having opposite spin orientation. The deposition is made under the influence of a magnetic field for the first layer and the opposite magnetic field for the second layer. Apparatus suitable for forming devices according to the process of the invention comprises: (a) heating element means (20) for holding at least one substrate (55) on which the semiconductor layers are formed; (b) a first electrode (22) for forming a glow discharge; (c) a second electrode (34) for forming the glow discharge opposed to said first electrode; (d) power supply means (60) for supplying power to said first electrode and said second electrode to form said glow discharge; (e) magnetic field producing means (30) adjacent said substrate holder for producing a first magnetic field with a first orientation at said substrate holder; (f) means for reversing said magnetic field to produce a second magnetic field with a second orientation at said substrate holder; (g) a chamber (15) for holding said substrate holder, first electrode, and second electrode; (h) means (40) communicating with said chamber for forming a vacuum in said chamber; and (i) means (45) communicating with said chamber for passing a gas containing the material to be formed on the substrate into the chamber.

    摘要翻译: 非晶硅材料和由两个沉积的硅层制成的器件,两个层具有相反的自旋取向。 在第一层的磁场和第二层的相反磁场的影响下进行沉积。 适用于根据本发明的方法形成装置的装置包括:(a)用于保持其上形成半导体层的至少一个衬底(55)的加热元件装置(20) (b)用于形成辉光放电的第一电极(22) (c)用于形成与所述第一电极相对的辉光放电的第二电极(34); (d)用于向所述第一电极和所述第二电极供电以形成所述辉光放电的电源装置(60) (e)与所述衬底保持器相邻的磁场产生装置(30),用于在所述衬底保持器处产生具有第一取向的第一磁场; (f)用于使所述磁场反转以在所述衬底保持器处产生具有第二取向的第二磁场的装置; (g)用于保持所述衬底保持器,第一电极和第二电极的腔室(15); (h)与所述室连通以在所述室中形成真空的装置(40); 和(i)与所述室连通的装置(45),用于使含有待形成在衬底上的材料的气体通入室中。

    IMPROVING PHOTOVOLTAIC (PV) EFFICIENCY USING HIGH FREQUENCY ELECTRIC PULSES
    18.
    发明申请
    IMPROVING PHOTOVOLTAIC (PV) EFFICIENCY USING HIGH FREQUENCY ELECTRIC PULSES 审中-公开
    使用高频电脉冲提高光伏效率

    公开(公告)号:WO2015057913A3

    公开(公告)日:2015-11-19

    申请号:PCT/US2014060813

    申请日:2014-10-16

    发明人: KUMAR SANTOSH

    IPC分类号: H01L31/042 H01L31/06

    摘要: A system can include at least one solar cell comprising a semiconductor material having p-n junctions formed therein; and a pulse generator electrically coupled to the solar cell and configured to apply electric pulses to dynamically alter a band gap of the semiconductor material as photons are received by the semiconductor material.

    摘要翻译: 系统可以包括至少一个太阳能电池,其包括其中形成有p-n结的半导体材料; 以及脉冲发生器,其电耦合到所述太阳能电池并且被配置为当所述半导体材料接收光子时,施加电脉冲以动态地改变所述半导体材料的带隙。

    BROADBAND REDUCED GRAPHITE OXIDE BASED PHOTOVOLTAIC DEVICES
    19.
    发明申请
    BROADBAND REDUCED GRAPHITE OXIDE BASED PHOTOVOLTAIC DEVICES 审中-公开
    广泛减少基于石墨氧化物的光伏器件

    公开(公告)号:WO2015153895A1

    公开(公告)日:2015-10-08

    申请号:PCT/US2015/024109

    申请日:2015-04-02

    IPC分类号: C23C16/00

    摘要: The embodiments of the disclosure relate generally to photovoltaic devices with broad band absorption in the solar light spectrum incident to Earth. The devices include integrated layers of graphite oxide and reduced graphite oxide, which exhibit intrinsic p/n junctions, which can be self-biasing and allow for production and separation of electron-hole pairs that can drive the current in the device. Descriptions of the devices and methods of making the structures are disclosed.

    摘要翻译: 本公开的实施例一般涉及在入射到地球的太阳光光谱中具有宽带吸收的光伏器件。 这些器件包括石墨氧化物和还原性氧化石墨的集成层,其表现出本征的p / n结,其可以是自偏压的并且允许产生和分离能够驱动器件中的电流的电子 - 空穴对。 公开了制造结构的装置和方法的描述。