公开(公告)号：WO2018222256A1

公开(公告)日：2018-12-06

申请号：PCT/US2018/024539

申请日：2018-03-27

Applicant: APPLIED MATERIALS, INC.

Inventor： OLSEN, Christopher S. ,  SHONO, Eric Kihara ,  HAWRYLCHAK, Lara ,  TJANDRA, Agus Sofian ,  PRASAD, Chaitanya A.

IPC: H01J37/32

CPC classification number: C23C16/45587 ,  C23C8/10 ,  C23C8/36 ,  C23C16/50 ,  H01J37/32183 ,  H01J37/3244 ,  H01J37/32467 ,  H01J37/32477 ,  H01J2237/3323 ,  H01L21/67017 ,  H01L21/67115 ,  H01L21/6719

Abstract: Embodiments of the present disclosure generally relate to a process chamber for conformal oxidation of high aspect ratio structures. The process chamber includes a liner assembly located in a first side of a chamber body and two pumping ports located in a substrate support portion adjacent a second side of the chamber body opposite the first side. The liner assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the process chamber. The liner assembly may be fabricated from quartz minimize interaction with process gases, such as radicals. The liner assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux. The two pumping ports can be individually controlled to tune the flow of the radicals through the processing region of the process chamber.

公开(公告)号：WO2018214447A1

公开(公告)日：2018-11-29

申请号：PCT/CN2017/113189

申请日：2017-11-27

Applicant: 江苏菲沃泰纳米科技有限公司

Inventor： 宗坚

IPC: C23C16/50 ,  C23C16/02 ,  B82Y40/00

CPC classification number: B82Y40/00 ,  C23C16/0245 ,  C23C16/50

Abstract: 一种循环小功率连续放电制备多功能性纳米防护涂层的方法，包括以下步骤：(1)将基材置于纳米涂层制备设备的反应腔室内，对反应腔室连续抽真空，将反应腔室内的真空度抽到10～200毫托，并通入惰性气体He或者Ar，开启运动机构，使基材在反应腔室内产生运动；(2)通入单体蒸汽到反应腔室内，至真空度为30～300毫托，开启等离子体放电，进行化学气相沉积；(3)沉积过程包括预处理阶段和镀膜阶段，预处理阶段等离子体放电功率为120～400W，持续放电时间60～450s，然后进入镀膜阶段，调整等离子体放电功率为10～75W，持续放电时间600～3600s；(4)循环重复步骤(3)中预处理阶段和镀膜阶段至少一次，在基材表面化学气相沉积制备多功能性纳米涂层；单体蒸汽成分为：至少一种单官能度不饱和氟碳树脂和至少一种多官能度不饱和烃类衍生物的混合物，单体蒸汽中多官能度不饱和烃类衍生物所占的质量分数为15～65％；(5)停止通入单体蒸汽，同时停止等离子体放电，持续抽真空，保持反应腔室真空度为10～200毫托1～5min后通入大气至一个大气压，停止基材的运动，然后取出基材即可。

公开(公告)号：WO2018174329A1

公开(公告)日：2018-09-27

申请号：PCT/KR2017/003401

申请日：2017-03-29

Applicant: 재단법인 구미전자정보기술원

Inventor： 김형진

IPC: G01N33/543 ,  G01N33/68

CPC classification number: C23C16/50 ,  C23C16/26 ,  G01N27/3276 ,  G01N27/3278 ,  G01N27/4145 ,  G01N27/4146 ,  G01N33/5438

Abstract: 본 발명은 DNA-기반 전도성 나노선을 이용한 바이오 센서 및 이의 제조방법에 관한 것으로, 보다 상세하게는 자발적으로 양전하를 띠는 전도성 나노입자의 코팅에 의해 형성되는 DNA 기반 전도성 나노선과 상기 DNA 기반 전도성 나노선과 정전기적 인력에 의해 결합하는 단백질 검출 수용체를 포함하여 고감도로 질병 여부를 판단할 수 있는 DNA-기반 전도성 나노선을 이용한 바이오 센서 및 이의 제조방법에 관한 것이다. 본 발명에 따른 DNA-기반 전도성 나노선을 이용한 바이오 센서는 기판상에 DNA를 선택적으로 정렬하는 DNA 정렬단계(S100)와, 정렬된 DNA 상에 양전하로 대전된 전도성 나노입자를 결합시켜 자발적 양전하를 띠는 DNA 기반 전도성 나노선을 제작하는 DNA 기반 전도성 나노선 제조단계(S200)와, 상기 DNA 기반 전도성 나노선에 단백질 검출을 위한 수용체를 고정하는 단백질 검출 수용체 고정단계(S300)를 포함하는 제조방법에 의해 제조되는 것을 특징으로 한다.

公开(公告)号：WO2018142179A1

公开(公告)日：2018-08-09

申请号：PCT/IB2017/000931

申请日：2017-07-31

Applicant: C4E TECHNOLOGY GMBH

Inventor： BRORS, Daniel

IPC: C23C16/44 ,  C23C16/50 ,  H01J37/32

CPC classification number: C23C16/4409 ,  C23C16/4412 ,  C23C16/50 ,  H01J37/32431 ,  H01J37/32513 ,  H01J37/32596 ,  H01J37/32651 ,  H01J37/32834 ,  H01J37/32899

Abstract: The invention relates to an apparatus (1) for applying a deposition onto a substrate (2) by a deposition process, wherein the apparatus (1) comprises a first vacuum chamber (3) which can be evacuated by means of a first evacuation pump (4). To improve the deposition process the invention is characterized in that a second vacuum chamber (5) for receiving the substrate (2) is arranged within the first vacuum chamber (3). Furthermore, the invention relates to a method for carrying out a deposition process for applying a deposition onto a substrate by use of such an apparatus.

公开(公告)号：WO2018133234A1

公开(公告)日：2018-07-26

申请号：PCT/CN2017/081786

申请日：2017-04-25

Applicant: 江苏菲沃泰纳米科技有限公司

Inventor： 宗坚

IPC: C23C16/455 ,  C23C16/50

CPC classification number: C23C16/45523 ,  C23C16/50

Abstract: 一种梯度递增结构防液涂层的制备方法，包括以下步骤：（1）将基材置于等离子体室反应腔体内，对该腔体连续抽真空至真空度为10-200毫托，通入惰性气体或氮气；（2）同时通入第一、第二及第三单体蒸汽，开启等离子体放电，进行化学气相沉积；（3）放电结束，关闭等离子体电源，停止通入三种单体蒸汽，持续抽真空，保持腔体真空度10-200毫托1-5min后通入大气至一个大气压，取出基材即可；其中第一单体蒸汽单官能度不饱和氟碳树脂，通入流量为10-1000μL/min；第二单体蒸汽多官能度不饱和烃类衍生物，通入初始流量为0μL/min；并以1-10μL/min速率递增，最大通入流量为500μL/min；第三单体蒸汽多官能度不饱和烃类衍生物，通入初始流量为0μL/min；并以1-10μL/min速率递增，最大通入流量为500μL/min。

公开(公告)号：WO2018100341A1

公开(公告)日：2018-06-07

申请号：PCT/GB2017/053521

申请日：2017-11-23

Applicant: ARM LTD

Inventor： ARAUJO, Carlos Alberto Paz de ,  CELINSKA, Jolanta Bozena ,  REID, Kimberly Gay ,  SHIFREN, Lucian

IPC: H01L45/00

CPC classification number: H01L45/146 ,  C23C14/0036 ,  C23C14/165 ,  C23C16/45525 ,  C23C16/50 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/16 ,  H01L45/1608

Abstract: The present techniques generally relate to an improved CEM switching device (350) and methods for its manufacture. In this device, a conductive substrate (370) and/or conductive overlay (380) each comprises a primary layer (370a, 380a) of a conductive material and a secondary layer (370b, 380b) of a conductive material. The primary layer (370a, 380a) contacting the CEM layer (360) is substantially inert to the CEM layer and/or acts an oxygen barrier for the secondary layer at temperatures used for the manufacture of the device.

公开(公告)号：WO2017174535A1

公开(公告)日：2017-10-12

申请号：PCT/EP2017/057906

申请日：2017-04-04

Applicant: AIXTRON SE

Inventor： KELMAN, Maxim ,  JIA, Zhongyuan ,  NAG, Somnath ,  DITIZIO, Robert

IPC: H01L21/20

CPC classification number: H01L21/02634 ,  C23C16/50 ,  C23C16/52 ,  H01L21/02381 ,  H01L21/02538 ,  H01L21/02658 ,  H01L21/02661 ,  H01L21/02694

Abstract: Described herein are techniques for forming an epitaxial III-V layer on a substrate. In a pre-clean chamber, a native oxygen layer may be replaced with a passivation layer bytreating the substrate with a hydrogen plasma (or products of a plasma decomposition). In a deposition chamber, the temperature of the substrate may beelevated to a temperature less than 700°C. While the substrate temperature is elevated, a group V precursor may beflowed into the deposition chamber in order to transform the hydrogen terminated (Si-H) surface of the passivation layer into an Arsenic terminated (Si-As) surface. After the substrate has been cooled, a group III precursor and the group V precursor may beflowed in order to form a nucleation layer. Finally, at an elevated temperature, the group III precursor and group V precursor may beflowed in order to form a bulk III-V layer.

Abstract translation: 这里描述的是用于在衬底上形成外延III-V层的技术。 在预清洁室中，通过用氢等离子体（或等离子体分解产物）处理衬底，可以用钝化层代替天然氧层。 在沉积室中，衬底的温度可升高到低于700℃的温度。 在衬底温度升高的同时，V族前驱物可以流入沉积室，以便将钝化层的氢封端（Si-H）表面转变成砷封端（Si-As）表面。 在衬底已经冷却之后，可以使III族前体和V族前体流动以形成成核层。 最后，在升高的温度下，III族前体和V族前体可以流动以形成III-V体层。

公开(公告)号：WO2017165550A1

公开(公告)日：2017-09-28

申请号：PCT/US2017/023635

申请日：2017-03-22

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON U.S. HOLDINGS, INC.

Inventor： DEVILLIERS, Anton J.

IPC: C23C16/48 ,  C23C16/458 ,  C23C16/04 ,  C23C16/46 ,  H01L21/67

CPC classification number: H01L22/26 ,  C23C16/047 ,  C23C16/458 ,  C23C16/46 ,  C23C16/481 ,  C23C16/50 ,  C23C16/511 ,  H01J37/32339 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32724 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/6833

Abstract: Techniques herein include systems and methods for fine control of temperature distribution across a substrate. Such techniques can be used to provide uniform spatial temperature distribution, or a biased spatial temperature distribution to improve plasma processing of substrates and/or correct characteristics of a given substrate. Embodiments include a plasma processing system with temperature control. Temperature control systems herein include a primary heating mechanism to heat a substrate, and a secondary heating mechanism that precisely modifies spatial temperature distribution across a substrate being processed. At least one heating mechanism includes a digital projection system configured to project a pattern of electromagnetic radiation onto or into a substrate, or through the substrate and onto a substrate support assembly. The digital projection system is configured to spatially and dynamically adjust the pattern of electromagnetic radiation and selectively augment heating of the substrate by each projected point location.

Abstract translation: 这里的技术包括用于精细控制基材上的温度分布的系统和方法。 这种技术可用于提供均匀的空间温度分布或偏置空间温度分布以改善衬底的等离子体处理和/或给定衬底的正确特性。 实施例包括具有温度控制的等离子处理系统。 本文的温度控制系统包括用于加热衬底的主加热机构和精确地改变正在被处理的衬底上的空间温度分布的第二加热机构。 至少一个加热机构包括数字投影系统，该数字投影系统被配置为将电磁辐射的图案投影到衬底上或衬底中，或穿过衬底并且衬底支撑组件上。 数字投影系统被配置为在空间上和动态地调整电磁辐射的图案并且通过每个投影点位置选择性地增加衬底的加热。

公开(公告)号：WO2017164742A1

公开(公告)日：2017-09-28

申请号：PCT/NL2017/050186

申请日：2017-03-24

Applicant: STICHTING ENERGIEONDERZOEK CENTRUM NEDERLAND

Inventor： LAMERS, Machteld Willemijn Petronel Elisabeth ,  WEEBER, Arthur Wouter

IPC: C23C16/34 ,  C23C16/50 ,  C23C16/54 ,  G02B1/113 ,  H01L31/00

CPC classification number: C23C16/345 ,  C23C16/50 ,  C23C16/54 ,  G02B1/113 ,  H01J37/32449 ,  H01J37/32458 ,  H01L31/02167 ,  H01L31/02168

Abstract: Plasma source assembly (1) within a plasma enhanced chemical vapor deposition (PECVD) device and method of providing a flow of particles to a substrate. A plasma treatment outlet of a housing (8) forms a plasma process zone for depositing a layer on the surface (2) by relative movement of the surface (2) along the plasma treatment outlet. The housing (8) hasan upstream elongated edge (6) and a downstream elongated edge (7). A plasma creation zone (3) is present within the housing (8), as well as one or more input ports (9-11) positioned in the plasma process zone for providing a process gas to the plasma creation zone (3). The plasma source assembly (1) is further arranged to provide a gradient in the concentration of particles in the flow as measured from the upstream elongated edge(6) to the downstream elongated edge (7).

Abstract translation: 等离子体增强化学气相沉积（PECVD）装置内的等离子体源组件（1）以及提供颗粒流到衬底的方法。 壳体（8）的等离子体处理出口形成等离子体处理区，用于通过表面（2）沿着等离子体处理出口的相对运动在表面（2）上沉积层。 壳体（8）具有上游细长边缘（6）和下游细长边缘（7）。 等离子体产生区域（3）存在于壳体（8）内，以及位于等离子体处理区域中的一个或多个输入端口（9-11），用于向等离子体产生区域（3）提供处理气体。 等离子体源组件（1）还被布置成提供从上游细长边缘（6）到下游细长边缘（7）测量的流动中的颗粒浓度梯度。

公开(公告)号：WO2017127847A1

公开(公告)日：2017-07-27

申请号：PCT/US2017/014663

申请日：2017-01-24

Applicant: APPLIED MATERIALS, INC.

Inventor： SUBRAMANI, Anantha, K. ,  HOUSHMAND, Farzad ,  KRAUS, Philip, A. ,  CHOWDHURY, Abhishek ,  FORSTER, John, C. ,  BERA, Kallol

IPC: H01L21/02 ,  H05H1/46 ,  H01J37/32 ,  H01J49/10

CPC classification number: H01J37/32091 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/50 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32577 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069

Abstract: Plasma source assemblies comprising a housing with an RF hot electrode having a body and a plurality of source electrodes extending vertically from the RF hot electrode toward the opening in a front face of the housing are described. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.

Abstract translation: 描述了包括具有RF热电极的壳体的等离子体源组件，该壳体具有主体和从RF热电极垂直地向壳体正面中的开口延伸的多个源电极。 还描述了包含等离子体源组件的处理室以及使用等离子体源组件的方法。