MULTIPLE STACK DEPOSITION FOR EPITAXIAL LIFT OFF

    公开(公告)号:WO2010077616A3

    公开(公告)日:2010-07-08

    申请号:PCT/US2009/067027

    申请日:2009-12-07

    Abstract: Embodiments of the invention are provided for a thin film stack containing a plurality of epitaxial stacks disposed on a substrate and a method for forming such a thin film stack. In one embodiment, the epitaxial stack contains a first sacrificial layer disposed over the substrate, a first epitaxial film disposed over the first sacrificial layer, a second sacrificial layer disposed over the first epitaxial film, and a second epitaxial film disposed over the second sacrificial layer. The thin film stack may further contain additional epitaxial films disposed over sacrificial layers. Generally, the epitaxial films contain gallium arsenide alloys and the sacrificial layers contain aluminum arsenide alloys. Methods provide the removal of the epitaxial films from the substrate by etching away the sacrificial layers during an epitaxial lift off (ELO) process. The epitaxial films are useful as photovoltaic cells, laser diodes, or other devices or materials.

    INTEGRATION OF A PHOTOVOLTAIC DEVICE
    32.
    发明申请
    INTEGRATION OF A PHOTOVOLTAIC DEVICE 审中-公开
    光伏器件的整合

    公开(公告)号:WO2010048555A2

    公开(公告)日:2010-04-29

    申请号:PCT/US2009/061920

    申请日:2009-10-23

    Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) unit may have all electrical contacts positioned on the back side of the PV device to avoid shadowing and increase absorption of the photons impinging on the front side of the PV unit. Several PV units may be combined into PV banks, and an array of PV banks may be connected to form a PV module with thin strips of metal or conductive polymer formed at low temperature. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

    Abstract translation: 提供了与常规太阳能电池相比,用于将诸如太阳能的电磁辐射转换成电能的方法和装置,其效率提高。 光伏(PV)单元可以具有位于PV装置的背面上的所有电触点,以避免遮蔽并增加入射到PV单元前侧的光子的吸收。 可以将多个PV单元组合到PV组中,并且可以连接一组PV组,以形成具有在低温下形成的薄金属或导电聚合物的PV模块。 与常规太阳能电池相比,这样的创新可以允许PV装置的更高的效率和灵活性。

    PHOTOVOLTAIC DEVICE
    34.
    发明申请
    PHOTOVOLTAIC DEVICE 审中-公开
    光电器件

    公开(公告)号:WO2010048537A2

    公开(公告)日:2010-04-29

    申请号:PCT/US2009/061898

    申请日:2009-10-23

    Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) unit, according to embodiments of the invention, may have a very thin absorber layer produced by epitaxial lift-off (ELO), all electrical contacts positioned on the back side of the PV device to avoid shadowing, and/or front side and back side light trapping employing a diffuser and a reflector to increase absorption of the photons impinging on the front side of the PV unit. Several PV units may be combined into PV banks, and an array of PV banks may be connected to form a PV module with thin strips of metal or conductive polymer applied at low temperature. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

    Abstract translation: 提供了与常规太阳能电池相比,用于将诸如太阳能的电磁辐射转换成电能的方法和装置,其效率提高。 根据本发明的实施例的光伏(PV)单元可以具有通过外延剥离(ELO)制造的非常薄的吸收层,所有电触点位于PV装置的背面以避免阴影,和/或 使用扩散器和反射器的前侧和后侧光捕获以增加入射到PV单元的前侧的光子的吸收。 可以将多个PV单元组合成PV组,并且PV组阵列可以连接以形成具有在低温下施加的薄金属或导电聚合物的PV模块。 与常规太阳能电池相比,这样的创新可以允许PV装置的更高的效率和灵活性。

    CONTINUOUS FEED CHEMICAL VAPOR DEPOSITION
    35.
    发明申请
    CONTINUOUS FEED CHEMICAL VAPOR DEPOSITION 审中-公开
    连续进料化学气相沉积

    公开(公告)号:WO2010042927A2

    公开(公告)日:2010-04-15

    申请号:PCT/US2009/060372

    申请日:2009-10-12

    Inventor: HE, Gang

    Abstract: Embodiments of the invention generally relate to a method for forming a multi-layered material during a continuous chemical vapor deposition (CVD) process. In one embodiment, a method for forming a multi-layered material during a continuous CVD process is provided which includes continuously advancing a plurality of wafers through a deposition system having at least four deposition zones. Multiple layers of materials are deposited on each wafer, such that one layer is deposited at each deposition zone. The methods provide advancing each wafer through each deposition zone while depositing a first layer from the first deposition zone, a second layer from the second deposition zone, a third layer from the third deposition zone, and a fourth layer from the fourth deposition zone. Embodiments described herein may be utilized to form an assortment of materials on wafers or substrates, especially for forming Group III/V materials on GaAs wafers.

    Abstract translation: 本发明的实施例总体上涉及在连续化学气相沉积(CVD)过程期间形成多层材料的方法。 在一个实施例中,提供了一种用于在连续CVD工艺期间形成多层材料的方法,其包括连续地推进多个晶片通过具有至少四个沉积区的沉积系统。 在每个晶片上沉积多层材料,使得在每个沉积区域沉积一层。 该方法提供每个晶片通过每个沉积区,同时沉积来自第一沉积区的第一层,来自第二沉积区的第二层,来自第三沉积区的第三层和来自第四沉积区的第四层。 本文描述的实施例可用于在晶片或衬底上形成各种材料,特别是用于在GaAs晶片上形成III / V族材料。

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