公开(公告)号：WO2014036264A1

公开(公告)日：2014-03-06

申请号：PCT/US2013/057297

申请日：2013-08-29

Applicant: MICRON TECHNOLOGY, INC.

Inventor： RAMASWAMY, Durai Vishak Nirmal ,  BI, Lei ,  COOK, Beth R. ,  COLLINS, Dale W.

IPC: H01L27/115 ,  H01L21/8247

CPC classification number: G11C13/0007 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2213/12 ,  G11C2213/51 ,  G11C2213/55 ,  H01L27/24 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1616

Abstract: Electronic apparatus, systems, and methods can include a resistive memory cell having a structured as an operably variable resistance region between two electrodes and a metallic barrier disposed in a region between the dielectric and one of the two electrodes. The metallic barrier can have a structure and a material composition to provide oxygen diffusivity above a first threshold during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold during a retention state of the resistive memory cell. Additional apparatus, systems, and methods are disclosed.

Abstract translation: 电子设备，系统和方法可以包括具有结构化为两个电极之间的可操作变化的电阻区域的电阻式存储单元和设置在电介质和两个电极中的一个之间的区域中的金属屏障。 金属屏障可以具有结构和材料组成，以在阻性存储器单元的保持状态期间在电阻存储器单元的编程或擦除操作期间提供高于第一阈值的氧扩散系数和低于第二阈值的氧扩散系数。 公开了附加装置，系统和方法。