公开(公告)号：WO01076819A1

公开(公告)日：2001-10-18

申请号：PCT/US2001/011026

申请日：2001-04-05

IPC: B24B37/04 ,  B24B57/02 ,  H01L21/304

CPC classification number: B24B57/02 ,  B24B37/04 ,  B24B37/042

Abstract: The present invention provides a method of polishing and/or cleaning a substrate using a multi-component polishing and/or cleaning composition, wherein the components of the polishing and/or cleaning composition are mixed at the point-of-use or immediately before delivery to the point-of-use. The present invention also provides a method of polishing and/or cleaning more than one substrate simultaneously using a single apparatus, wherein a different polishing or cleaning composition is delivered to each substrate.

Abstract translation: 本发明提供了一种使用多组分抛光和/或清洁组合物抛光和/或清洁基底的方法，其中抛光和/或清洁组合物的组分在使用时或在分娩之前混合 到使用点。 本发明还提供了一种使用单一设备同时抛光和/或清洁多于一个底物的方法，其中将不同的抛光或清洁组合物递送至每个基底。

公开(公告)号：WO2001074537A1

公开(公告)日：2001-10-11

申请号：PCT/US2001/009887

申请日：2001-03-28

Applicant: LAM RESEARCH CORPORATION

Inventor： BOYD, John, M.

IPC: B24B37/04

CPC classification number: B24D18/009 ,  B24B21/18 ,  B24B37/04 ,  B24D3/28 ,  B24D11/001

Abstract: Methods and apparatus are provided for combining the manufacturing of a fixed-abrasive substrate and the chemical mechanical planarization of semiconductor wafers using a single process path (26). An electrostatic patterning device (58) produces an electrostatic charge of a predetermined pattern and density on a backing (52). An abrasive/binding agent container (60) deposits an abrasive/binding agent mixture on the surface of the backing (52). The mixture is attracted to the backing (52) in the pattern of the electrostatic charge. A vacuum force generator (62) removes the excess abrasive/binding agent mixture from the backing (52). An UV irradiation device (64) fixes the mixture to the backing (52). A conveyor (74) carries the fixed-abrasive substrate (54) to the CMP station (66).

Abstract translation: 提供了使用单一工艺路径（26）将固定磨料基材的制造与半导体晶片的化学机械平坦化组合的方法和装置。 静电图案形成装置（58）在背衬（52）上产生预定图案和密度的静电荷。 研磨/粘合剂容器（60）将磨料/粘合剂混合物沉积在背衬（52）的表面上。 混合物以静电荷的形式被吸引到背衬（52）上。 真空力发生器（62）从背衬（52）去除多余的磨料/粘合剂混合物。 UV照射装置（64）将混合物固定到背衬（52）上。 输送机（74）将固定磨料基底（54）运送到CMP站（66）。

公开(公告)号：WO01074532A1

公开(公告)日：2001-10-11

申请号：PCT/IT2000/000115

申请日：2000-03-30

IPC: B24B49/04 ,  B24B37/04 ,  B24B49/03 ,  B24B51/00 ,  H01L21/304 ,  B24B1/00

CPC classification number: B24B37/042 ,  B24B37/04 ,  B24B49/03 ,  B24B51/00

Abstract: The method comprises the steps of mounting a first wafer (13) on the mounting member (12) and securing the mounting member to the hub (16) by drawing a vacuum at a first vacuum pressure through the hub; rotating the hub about the hub axis (AH), rotating a polishing pad (34) mounted on the turntable (30) about the turntable axis (at), and bringing a surface of the wafer (13) and the polishing pad into contact with each other. The wafer (16) is demounted, and the shape of the polished wafer is determined. A second vacuum pressure is selected using the information obtained. A successive wafer is polished according to the same method as the first wafer except that the second vacuum pressure is substituted for the first vacuum pressure. The second vacuum pressure is sufficient to deform the mounting member (12) thereby deform the wafer to improve the flatness and parallelism of the surfaces of the successive wafer.

Abstract translation: 该方法包括以下步骤：将第一晶片（13）安装在安装构件（12）上，并通过在第一真空压力下通过该毂抽真空，将安装构件固定到轮毂（16）上; 围绕所述轮毂轴线（AH）旋转所述轮毂，使安装在所述转盘（30）上的抛光垫（34）围绕所述转盘轴线（at）旋转，并且使所述晶片（13）的表面和所述抛光垫与 彼此。 拆下晶片（16），并确定抛光晶片的形状。 使用获得的信息选择第二真空压力。 除了第二真空压力代替第一真空压力之外，根据与第一晶片相同的方法对连续的晶片进行抛光。 第二真空压力足以使安装构件（12）变形，从而使晶片变形，以改善连续晶片的表面的平坦度和平行度。

公开(公告)号：WO01054179A1

公开(公告)日：2001-07-26

申请号：PCT/US2001/001517

申请日：2001-01-17

IPC: B24B37/04 ,  C02F1/42 ,  C02F1/467 ,  C25D21/16 ,  C25D21/18 ,  C25D21/22 ,  H01L21/302 ,  B24B1/00 ,  H01L21/304

CPC classification number: C25D21/22 ,  B24B37/04 ,  B24B57/02 ,  C02F1/42 ,  C02F1/4678 ,  C02F2101/20 ,  C02F2103/16 ,  C02F2103/346 ,  C02F2303/16 ,  C25D21/16 ,  C25D21/18

Abstract: A method and apparatus is disclosed for reclaiming a metal from the effluent of a chemical mechanical planarization (CMP) process and using the reclaimed metal in an electroplating process. The steps of the method include using a chemical solution in a (CMP) process to remove material from a semiconductor device. An effluent is produced by this step that contains a dissolved first species removed from the semiconductor device. Then a second step of treating the effluent is performed to remove the dissolved first species and to produce a reclaimed metal. Then a third step of using the metal in an electroplating process is performed.

Abstract translation: 公开了用于从化学机械平面化（CMP）工艺的流出物回收金属并在电镀工艺中使用再生金属的方法和装置。 该方法的步骤包括在（CMP）工艺中使用化学溶液从半导体器件中去除材料。 通过该步骤产生含有从半导体器件中去除的溶解的第一种子的流出物。 然后进行处理流出物的第二步骤以除去溶解的第一种并产生再生金属。 然后执行在电镀工艺中使用金属的第三步骤。

公开(公告)号：WO01049453A1

公开(公告)日：2001-07-12

申请号：PCT/US2000/035457

申请日：2000-12-28

IPC: B24B21/04 ,  B24B37/04 ,  B24B53/10

CPC classification number: B24B53/017 ,  B24B21/04 ,  B24B37/04 ,  B24B53/10

Abstract: A method and apparatus for conditioning a polishing pad is described. The method includes steps of moving a cylindrical roller (202) having an abrasive substance affixed to it against a moving polishing pad (46). The roller may be actively rotated or reciprocated at variable rates, while maintaining a pressure against the polishing pad. The apparatus includes a cylindrical roller attached to one or more pressure application devices mechanically connected to the roller.

Abstract translation: 描述了一种用于调节抛光垫的方法和装置。 该方法包括将具有固定在其上的磨料的圆柱滚子（202）移动到移动的抛光垫（46）上的步骤。 辊可以以可变的速率主动旋转或往复运动，同时保持对抛光垫的压力。 该装置包括一个连接到一个或多个压力施加装置的圆柱滚子，该压力施加装置机械地连接到滚子上。

公开(公告)号：WO01039260A1

公开(公告)日：2001-05-31

申请号：PCT/US2000/032077

申请日：2000-11-22

IPC: B24B37/04 ,  B24B57/02 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/321 ,  H01L21/302 ,  H01L21/461

CPC classification number: B24B37/04 ,  B24B57/02 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

Abstract: The invention utilizes colloidal silica soot (62) in a semiconductor process for chemical-mechanical planarizing a semiconductor integrated circuit workpiece (24) with a slurry (60). The particulate abrasive agent colloidal solid sphere fused silica soot (62) provides a beneficial CMP slurry/process for semiconductor device manufacturing compared to standard semiconductor CMP slurries with conventional colloidal sol-gel or fumed silica.

Abstract translation: 本发明在半导体工艺中利用胶体二氧化硅烟炱（62），用半导体集成电路工件（24）对浆料（60）进行化学机械平坦化。 与使用常规胶体溶胶 - 凝胶或热解法二氧化硅的标准半导体CMP浆料相比，微粒磨料胶体固体球熔融二氧化硅烟炱（62）为半导体器件制造提供了有益的CMP浆料/工艺。

公开(公告)号：WO00067948A1

公开(公告)日：2000-11-16

申请号：PCT/US1999/018853

申请日：1999-09-14

IPC: B24B1/00 ,  B24B37/04

CPC classification number: B24B1/005 ,  B24B37/04

Abstract: A method of machining flat parts (2), includes the use of two permanent magnets (7, 8) which are located opposite to and spaced from one another so as to form a magnetic field with a magnetic flux extending perpendicular to the magnets, placing a flat part (2) in the magnetic field between the magnets so that the magnetic flux extends through the flat part (2), supplying a magnetic-abrasive powder (9) to the flat part (2) in the magnetic field, and performing a relative movement between at least one of the magnets (7, 8) and the flat part (2) so as to remove a material from a surface of the flat part (2).

Abstract translation: 一种加工扁平部件（2）的方法包括使用两个永磁体（7,8），两个永磁体彼此相对并且彼此间隔开，以形成具有垂直于磁体的磁通量的磁场，放置 在磁体之间的磁场中的平坦部分（2），使得磁通量延伸通过平坦部分（2），在磁场中向平坦部分（2）供应磁性研磨粉末（9），并且执行 在所述磁体（7,8）和所述平坦部分（2）中的至少一个之间的相对运动，以便从所述平坦部分（2）的表面去除材料。

公开(公告)号：WO0035627A2

公开(公告)日：2000-06-22

申请号：PCT/US9930112

申请日：1999-12-16

Applicant: SPEEDFAM IPEC CORP

Inventor： HOLLAND KAREY ,  ZUTSHI AJOY ,  DAI FEN ,  GOTKIS YEHIEL ,  YANG C JERRY ,  SCHEY DENNIS ,  MITCHEL FRED ,  YANG LIN

IPC: B24B37/04 ,  H01L21/304 ,  H01L21/321 ,  H01L21/768 ,  B24B

CPC classification number: B24B37/04 ,  H01L21/3212 ,  H01L21/7684

Abstract: A multi-step CMP system is used to polish a wafer to form metal interconnects in a dielectric layer upon which barrier and metal layers have been formed. A first polish removes an upper portion of the metal layer using a first slurry and a first set of polishing parameters, leaving residual metal within the dielectric layer to serve as the metal interconnects. A second polish of the wafer on the same platen and polishing pad removes portions of the barrier layer using a second slurry under a second set of polishing parameters. The second polish clears the barrier layer from the upper surface of the dielectric layer, thereby forming the metal interconnect. To reduce dishing and dielectric erosion, the second slurry is selected so that the barrier layer is removed at a faster rate than the residual metal within the dielectric layer. A cleaning step may be optionally performed between the first and second polishes. Further, the first polish may include a soft landing step to further reduce dishing and dielectric erosion. Alternatively, the first polish may be used to remove portions of the metal and barrier layers, leaving residual metal in the dielectric layer to serve as the metal interconnect. A second polish using a dielectric slurry is then performed to reduce microscratches.

Abstract translation: 使用多步CMP系统来抛光晶片以在形成有阻挡层和金属层的电介质层中形成金属互连。 第一抛光剂使用第一浆料和第一组抛光参数去除金属层的上部，留下介电层内的残余金属用作金属互连。 在同一压板和抛光垫上的晶片的第二次抛光在第二组抛光参数下使用第二浆料去除部分阻挡层。 第二抛光从电介质层的上表面清除阻挡层，从而形成金属互连。 为了减少凹陷和电介质侵蚀，选择第二浆料，使得以比介电层内的残余金属更快的速率去除阻挡层。 可以可选地在第一和第二抛光剂之间执行清洁步骤。 此外，第一抛光剂可以包括软着陆步骤以进一步减少凹陷和电介质侵蚀。 或者，可以使用第一抛光剂去除金属和阻挡层的部分，在电介质层中留下残余金属用作金属互连。 然后使用电介质浆料进行第二次抛光，以减少微细纹。

公开(公告)号：WO00025984A1

公开(公告)日：2000-05-11

申请号：PCT/US1999/025183

申请日：1999-10-26

IPC: B24B37/04 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/768

CPC classification number: H01L21/76819 ,  B24B37/04 ,  B24B37/042 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/7684

Abstract: A substrate (10) is chemical mechanical polished with a high-selectivity slurry until the stop layer (14) is at least partially exposed, and then the substrate (10) is polished with a low-selectivity slurry until the stop layer (14) is completely exposed.

Abstract translation: 衬底（10）用高选择性浆料进行化学机械抛光，直至止挡层（14）至少部分露出，然后用低选择性浆料抛光衬底（10）直到停止层（14） 是完全暴露的。

公开(公告)号：WO99056189A1

公开(公告)日：1999-11-04

申请号：PCT/US1999/009247

申请日：1999-04-28

IPC: B24B55/00 ,  B24B37/04 ,  B24B57/02 ,  G05D11/13

CPC classification number: B24B37/04 ,  B24B57/02 ,  G05D11/135

Abstract: The invention provides a process and system that utilizes conductivity measurements during mixing of chemical components to provide a slurry having a solids content within a qualification range. That is, by providing a reference conductivity value indicative of when a sufficient amount of at least two chemicals are combined and by monitoring conductivity while the chemicals are combined, the process and system of the present invention are able to provide a slurry having a solids content within a qualification range.

Abstract translation: 本发明提供了一种方法和系统，该方法和系统在混合化学组分期间利用电导率测量，以提供具有在限定范围内的固体含量的浆料。 也就是说，通过提供指示何时组合足够量的至少两种化学品的参考电导率值并且通过在化学品组合时监测导电性，本发明的方法和系统能够提供具有固体含量的浆料 在资格范围内。