公开(公告)号：WO2010048291A1

公开(公告)日：2010-04-29

申请号：PCT/US2009/061488

申请日：2009-10-21

Applicant: CROSSTEK CAPITAL, LLC ,  HYNECEK, Jaroslav ,  FORBES, Leonard ,  HADDAD, Homayoon ,  JOY, Thomas

Inventor： HYNECEK, Jaroslav ,  FORBES, Leonard ,  HADDAD, Homayoon ,  JOY, Thomas

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14698 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A backside illuminated image sensor includes a substrate, a backside passivation layer disposed on backside of the substrate, and a transparent conductive layer disposed on the backside passivation layer.

Abstract translation: 背面照明图像传感器包括衬底，设置在衬底背面的背面钝化层和设置在背面钝化层上的透明导电层。

公开(公告)号：WO2009107755A1

公开(公告)日：2009-09-03

申请号：PCT/JP2009/053614

申请日：2009-02-20

Applicant: KABUSHIKI KAISHA TOSHIBA ,  YAMASHITA, Hirofumi

Inventor： YAMASHITA, Hirofumi

IPC: H01L27/146 ,  H01L31/10

CPC classification number: H01L27/1463 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14687 ,  H01L31/18

Abstract: A solid-state imaging device includes a pixel region which is configured such that a photoelectric conversion unit and a signal scanning circuit unit are included in a semiconductor substrate, and a matrix of unit pixels is disposed, and a driving circuit region which is configured such that a device driving circuit for driving the signal scanning circuit unit is disposed on the semiconductor substrate, wherein the photoelectric conversion unit is provided on a back surface side of the semiconductor substrate, which is opposite to a front surface of the semiconductor substrate where the signal scanning circuit unit is formed, and the unit pixel includes an insulation film which is provided in a manner to surround a boundary part with the unit pixel that neighbors and defines a device isolation region.

Abstract translation: 固态成像装置包括：像素区域，其被构造为使得光电转换单元和信号扫描电路单元包括在半导体衬底中，并且设置单位像素的矩阵;以及驱动电路区域，其被配置为 用于驱动信号扫描电路单元的器件驱动电路设置在半导体衬底上，其中光电转换单元设置在与半导体衬底的正面相反的半导体衬底的背面侧，其中信号 形成扫描电路单元，并且单位像素包括绝缘膜，该绝缘膜以与邻近的单位像素围绕边界部分的方式设置并且限定了器件隔离区域。

公开(公告)号：WO2009099490A1

公开(公告)日：2009-08-13

申请号：PCT/US2008/088250

申请日：2008-12-23

Applicant: OMNIVISION TECHNOLOGIES, INC. ,  TAI, Hsin-chih ,  RHODES, Howard, E. ,  MAO, Duli ,  VENEZIA, Vincent ,  QIAN, Yin

Inventor： TAI, Hsin-chih ,  RHODES, Howard, E. ,  MAO, Duli ,  VENEZIA, Vincent ,  QIAN, Yin

IPC: H01L27/146

CPC classification number: H01L27/14618 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A backside illuminated imaging sensor includes a semiconductor substrate having a front surface and a back surface. The semiconductor substrate has at least one imaging array formed on the front surface. The imaging sensor also includes a carrier substrate to provide structural support to the semiconductor substrate, where the carrier substrate has a first surface coupled to the front surface of the semiconductor substrate. A re-distribution layer is formed between the front surface of the semiconductor substrate and the second surface of the carrier substrate to route electrical signals between the imaging array and a second surface of the carrier substrate.

Abstract translation: 背面照明成像传感器包括具有前表面和后表面的半导体衬底。 半导体衬底具有形成在前表面上的至少一个成像阵列。 该成像传感器还包括一个载体衬底，用于向半导体衬底提供结构支撑，其中载体衬底具有耦合到半导体衬底的前表面的第一表面。 在半导体衬底的前表面和载体衬底的第二表面之间形成再分配层，以在成像阵列和载体衬底的第二表面之间布置电信号。

公开(公告)号：WO2009099483A1

公开(公告)日：2009-08-13

申请号：PCT/US2008/087287

申请日：2008-12-17

Applicant: OMNIVISION TECHNOLOGIES, INC. ,  VENEZIA, Vincent ,  TAI, Hsin-Chih ,  MAO, Duli ,  MANABE, Sohei ,  RHODES, Howard, E. ,  QIAN, Wei, Dong

Inventor： VENEZIA, Vincent ,  TAI, Hsin-Chih ,  MAO, Duli ,  MANABE, Sohei ,  RHODES, Howard, E. ,  QIAN, Wei, Dong

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/14689

Abstract: An array of pixels is formed using a substrate having a frontside and a backside that is for receiving incident light. Each pixel typically includes metallization layers included in the frontside of the substrate, a photosensitive region formed in the backside of the substrate, and a trench formed around the photosensitive region in the backside of the substrate. The trench causes the incident light to be directed away from the trench and towards the photosensitive region.

Abstract translation: 使用具有用于接收入射光的前侧和后侧的基板形成像素阵列。 每个像素通常包括包括在基板的前侧中的金属化层，形成在基板的背面中的感光区域和在基板的背面中的感光区域周围形成的沟槽。 沟槽使得入射光被引导离开沟槽并朝向光敏区域。

公开(公告)号：WO2009078299A1

公开(公告)日：2009-06-25

申请号：PCT/JP2008/072261

申请日：2008-12-08

Applicant: ローム株式会社 ,  松島 理 ,  宮崎 憲一

Inventor： 松島 理 ,  宮崎 憲一

IPC: H01L27/146 ,  H01L31/10 ,  H04N5/33 ,  H04N5/335

CPC classification number: H01L27/14632 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14687 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

Abstract: 　可視光から近赤外光までの広い波長域にわたって高い感度を有し、暗電流が低減され、かつ平坦化構造の固体撮像装置およびその製造方法を提供する。 　基板（１０）上に回路部（３０）を形成する工程と、回路部（３０）上に下部電極層（２５）を形成する工程と、下部電極層（２５）をパターニングして画素毎に分離する工程と、素子領域全面にカルコパイライト構造の化合物半導体薄膜（２４）を形成する工程と、化合物半導体薄膜（２４）上にレジスト層（２７）を塗布後、分離された下地の下部電極層（２５）に合わせて、画素毎にパターニングする工程と、素子領域全面にイオン注入を実施して、化合物半導体薄膜（２４）に素子分離領域（３４）を形成する工程と、レジスト層（２７）を剥離し、画素毎に素子分離領域（３４）で分離された化合物半導体薄膜（２４）の表面を露出する工程と、素子領域全面に透明電極層（２６）を平坦化形成する工程とを有する。

Abstract translation: 具有在从可见光到近红外光的宽波长区域表现出高灵敏度的平坦化结构的固态成像装置，以及制造这种固态成像装置的方法。 固态成像装置的制造方法包括在基板（10）上形成电路部（30）的工序。 在电路部分（30）上形成下电极层（25）的步骤; 通过图案化分离每个像素的下电极层（25）的步骤; 在元件区域的整个表面上形成具有黄铜矿结构的化合物半导体薄膜（24）的步骤; 将抗蚀剂层（27）施加到化合物半导体薄膜（24）上，然后根据分离的下层电极层（25）对每个像素构图化合物半导体薄膜的步骤; 通过将离子注入元件区域的整个表面来在化合物半导体薄膜（24）上形成隔离区（34）的步骤; 用于剥离抗蚀剂层（27）并使由隔离区域（34）隔离的化合物半导体膜（24）的表面暴露于每个元件的步骤; 以及在元件区域的整个表面上平面地形成透明电极层（26）的步骤。

公开(公告)号：WO2008143461A2

公开(公告)日：2008-11-27

申请号：PCT/KR2008/002837

申请日：2008-05-21

Applicant: PARK, Tae-Seok ,  KIM, Young Sung

Inventor： PARK, Tae-Seok ,  KIM, Young Sung

IPC: H01L21/60

CPC classification number: H01L27/14687 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L27/14618 ,  H01L27/14632 ,  H01L27/14636 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05171 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/11 ,  H01L2224/1147 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01059 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/00014

Abstract: The present invention relates to a wafer level chip scale package of an image sensor by means of through hole interconnection and a method for manufacturing the same, in which through hole-interconnected electrodes, through holes filled with metals, are induced to the back side of a wafer substrate. In this structure, a length of wiring can be minimized to decrease a power loss and speed up signal transfer. A wafer level chip scale package of an image sensor by means of through hole interconnection in accordance with one embodiment of the present invention comprises: an image sensor for converting light from outside to an electrical signal, the image sensor being located on the front side of a wafer substrate; the electrode pads for outputting the electrical signal made in the image sensor, the electrode pads being located on the wafer substrate and extending near or into a dicing street; a through hole-interconnected electrode for transferring the electrical signal outputted from the electrode pads to the back side of the wafer substrate; and bumps on the through hole interconnected electrode. We call the technology in the present invention as "J-connection technology".

Abstract translation: 本发明涉及一种通过通孔互连的图像传感器的晶片级芯片级封装及其制造方法，其中通孔互连电极，填充有金属的通孔被诱导到 晶圆基板。 在这种结构中，可以使布线长度最小化以降低功率损耗并加速信号传输。 根据本发明的一个实施例的通过通孔互连的图像传感器的晶片级芯片级封装包括：用于将光从外部转换成电信号的图像传感器，所述图像传感器位于 晶圆基板; 所述电极焊盘用于输出在所述图像传感器中形成的电信号，所述电极焊盘位于所述晶片衬底上并且在切割街道附近或附近延伸; 用于将从电极焊盘输出的电信号传送到晶片衬底的背面的通孔互连电极; 并且在通孔互连电极上的凸块。 我们将本发明中的技术称为“J连接技术”。

公开(公告)号：WO2008035861A1

公开(公告)日：2008-03-27

申请号：PCT/KR2007/004141

申请日：2007-08-29

Applicant: HANVISION CO., LTD. ,  HANNEBAUER, Robert, Steven ,  YOO, Sang Keun

Inventor： HANNEBAUER, Robert, Steven ,  YOO, Sang Keun

IPC: H01L31/02

CPC classification number: H01L27/14647 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

Abstract: The present invention relates to a semiconductor device, and more particularly, a semiconductor device having a multi-level photodiode structure to maximize quantum efficiency for each wavelength. The semiconductor device includes a plurality of photodiode layers formed in a multi-level structure, an all-reflection layer formed under the photodiode layers, and a transistor layer formed under the all-reflection layer. Internal filter stacks respectively corresponding to wavelengths can be formed on the photodiode layers. Otherwise, external color filters such as anti-reflection coating layers or IR filters, which respectively correspond to wavelengths, can be added to the semiconductor device.

Abstract translation: 本发明涉及一种半导体器件，更具体地说，涉及具有多级光电二极管结构的半导体器件，以使每种波长的量子效率最大化。 半导体器件包括以多层结构形成的多个光电二极管层，形成在光电二极管层下的全反射层，以及形成在全反射层下的晶体管层。 分别对应于波长的内部滤波器叠层可以形成在光电二极管层上。 否则，可以将分别对应于波长的诸如防反射涂层或IR滤光器的外部滤色器添加到半导体器件中。

公开(公告)号：WO2008020899A2

公开(公告)日：2008-02-21

申请号：PCT/US2007/009347

申请日：2007-04-17

Applicant: CDM OPTICS, INC. ,  DOWSKI, Edward, R. ,  SCEPANOVIC, Miodrag ,  TACHIHARA, Satoru ,  LINNEN, Christopher, J. ,  DOBBS, Dennis, W. ,  FAN, Regis, S. ,  KUBALA, Kenneth, S. ,  SILVEIRA, Paulo, E.X. ,  BARNES, George, C., IV ,  CHUMACHENKO, Vladislav, V. ,  MELONI, Mark, A. ,  SCHWARTZ, Brian, T. ,  HEPP, Michael ,  MACON, Kenneth, Ashley ,  MADER, John, J. ,  RAUKER, Goran, M. ,  JOHNSON, Gregory, E. ,  CORMACK, Robert, H. ,  TAMAYO, Inga ,  COMBS, Donald ,  DUERKSEN, Gary, L. ,  RHODES, Howard, E. ,  HE, James

Inventor： DOWSKI, Edward, R. ,  SCEPANOVIC, Miodrag ,  TACHIHARA, Satoru ,  LINNEN, Christopher, J. ,  DOBBS, Dennis, W. ,  FAN, Regis, S. ,  KUBALA, Kenneth, S. ,  SILVEIRA, Paulo, E.X. ,  BARNES, George, C., IV ,  CHUMACHENKO, Vladislav, V. ,  MELONI, Mark, A. ,  SCHWARTZ, Brian, T. ,  HEPP, Michael ,  MACON, Kenneth, Ashley ,  MADER, John, J. ,  RAUKER, Goran, M. ,  JOHNSON, Gregory, E. ,  CORMACK, Robert, H. ,  TAMAYO, Inga ,  COMBS, Donald ,  DUERKSEN, Gary, L. ,  RHODES, Howard, E. ,  HE, James

IPC: H01L27/146

CPC classification number: G06F17/504 ,  B24B13/06 ,  B24B49/00 ,  G02B3/0025 ,  G02B3/0031 ,  G02B3/0068 ,  G02B3/0075 ,  G02B7/022 ,  G02B13/0025 ,  G02B13/006 ,  G02B13/0085 ,  G02B27/0025 ,  G06F17/5081 ,  G06F2217/06 ,  G06F2217/12 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687 ,  H01L2924/0002 ,  H04N5/2257 ,  H01L2924/00

Abstract: Arrayed imaging systems include an array of detectors formed with a common base and a first array of layered optical elements, each one of the layered optical elements being optically connected with a detector in the array of detectors.

Abstract translation: 阵列成像系统包括由公共基底和第一阵列分层光学元件形成的检测器阵列，每个分层光学元件与检测器阵列中的检测器光学连接。 / p>

公开(公告)号：WO2006025496A8

公开(公告)日：2007-06-21

申请号：PCT/JP2005016024

申请日：2005-09-01

Applicant: MATSUSHITA ELECTRIC IND CO LTD ,  TOSHIKIYO KIMIAKI ,  ONOZAWA KAZUTOSHI ,  UEDA DAISUKE ,  GOUBARA TAKU

Inventor： TOSHIKIYO KIMIAKI ,  ONOZAWA KAZUTOSHI ,  UEDA DAISUKE ,  GOUBARA TAKU

IPC: G02B3/00 ,  G02B5/18 ,  H01L27/14 ,  H04N5/335 ,  H04N5/361 ,  H04N5/369

CPC classification number: G02B5/1876 ,  G02B5/1885 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02162 ,  H01L31/02327

Abstract: A high sensitivity solid-state imaging device applicable even to an optical system of short focal length (large incident angle ?). Each element (size?2.8 mm) comprises a distributed refractive index lens (1), a color filter (2) for G, Al wiring (3), a signal transmitting section (4), a planarization layer (5), a light receiving element (Si photodiode) (6), and an Si substrate (7). A concentric circular structure of the distributed refractive index lens is composed of four kinds of material of different refractive index, i.e. TiO 2 (n=2.53), SiN(n=2.53), SiO 2 (n=2.53) and air(n=1.0), wherein the difference of radius of outer circumference between adjacent circular light transmitting films is 100nm. The film thickness is 0.4µm.

Abstract translation: 高灵敏度固态成像装置甚至适用于短焦距（大入射角θ）的光学系统。 每个元件（尺寸≥2.8mm）包括分布折射率透镜（1），用于G，Al布线（3）的滤色器（2），信号传输部分（4），平坦化层（5），光 接收元件（Si光电二极管）（6）和Si衬底（7）。 分布折射率透镜的同心圆形结构由四种不同折射率的材料组成，即TiO 2（n = 2.53），SiN（n = 2.53），SiO 2 （n = 2.53）和空气（n = 1.0），其中相邻圆形透光膜之间的外周半径差为100nm。 膜厚0.4μm。

公开(公告)号：WO2007027880A2

公开(公告)日：2007-03-08

申请号：PCT/US2006/034011

申请日：2006-08-31

Applicant: MICRON TECHNOLOGY, INC. ,  OLIVER, Steven, D. ,  VELICKY, Lu ,  HIATT, William, M. ,  HEMBREE, David, R. ,  TUTTLE, Mark, E. ,  RIGG, Sidney ,  WARK, James ,  FARNWORTH, Warren, M. ,  KIRBY, Kyle

Inventor： OLIVER, Steven, D. ,  VELICKY, Lu ,  HIATT, William, M. ,  HEMBREE, David, R. ,  TUTTLE, Mark, E. ,  RIGG, Sidney ,  WARK, James ,  FARNWORTH, Warren, M. ,  KIRBY, Kyle

IPC: H01L27/146

CPC classification number: H01L21/00 ,  H01L21/76898 ,  H01L23/552 ,  H01L27/14609 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/14687 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Microelectronic imaging units and methods for manufacturing a plurality of imaging units at the wafer level are disclosed herein. In one embodiment, a method for manufacturing a plurality of imaging units includes providing an imager workpiece having a plurality of imaging dies including integrated circuits, external contacts electrically coupled to the integrated circuits, and image sensors operably coupled to the integrated circuits. The individual image sensors include at least one dark current pixel at a perimeter portion of the image sensor. The method includes depositing a cover layer onto the workpiece and over the image sensors. The method further includes patterning and selectively developing the cover layer to form discrete volumes of cover layer material over corresponding image sensors. The discrete volumes of cover layer material have sidewalls aligned with an inboard edge of the individual dark current pixels such that the dark current pixels are not covered by the discrete volumes.

Abstract translation: 本文公开了用于在晶片级制造多个成像单元的微电子成像单元和方法。 在一个实施例中，制造多个成像单元的方法包括提供具有多个成像管芯的成像工件，所述成像管芯包括集成电路，电耦合到集成电路的外部触点以及可操作地耦合到集成电路的图像传感器。 各个图像传感器包括在图像传感器的周边部分处的至少一个暗电流像素。 该方法包括将覆盖层沉积在工件上并在图像传感器上方。 该方法还包括图案化和选择性地显影覆盖层以在对应的图像传感器上形成分离体积的覆盖层材料。 覆盖层材料的离散体积具有与各个暗电流像素的内侧边缘对准的侧壁，使得暗电流像素不被离散体积覆盖。