公开(公告)号：WO2017116615A1

公开(公告)日：2017-07-06

申请号：PCT/US2016/064941

申请日：2016-12-05

Applicant: EVERSPIN TECHNOLOGIES, INC.

Inventor： UGGE, Angelo ,  SCHWICKERT, Markus ,  HAYNER, David

IPC: G01R15/20

CPC classification number: G01R15/20 ,  G01R15/207 ,  G01R33/0005

Abstract: A sensing apparatus for characterizing current flow through a conductor includes a plurality of magnetic sensors. In some embodiments, the sensors are grouped in pairs to achieve common mode rejection of signals generated in response to magnetic fields not resulting from current flow through the conductor. Sensors having different levels of sensitivity are used to collect information regarding the magnetic field generated by the current flowing through the conductor, where such information is processed in order to characterize the magnetic field. In some cases the sensors are included on or in flexible material that can be wrapped around the conductor.

Abstract translation: 用于表征通过导体的电流的传感装置包括多个磁传感器。 在一些实施例中，传感器成对分组以实现响应于不是由流过导体的电流产生的磁场而产生的信号的共模抑制。 使用具有不同灵敏度水平的传感器来收集关于流经导体的电流所产生的磁场的信息，其中处理这些信息以表征磁场。 在某些情况下，传感器包含在可缠绕导体的柔性材料之上或之中。

公开(公告)号：WO2016176130A1

公开(公告)日：2016-11-03

申请号：PCT/US2016/029107

申请日：2016-04-25

Applicant: EVERSPIN TECHNOLOGIES, INC.

Inventor： MOHAN, Anuraag ,  MATHER, Phillip, G.

IPC: G01R33/09 ,  B82Y25/00

CPC classification number: G01R33/098 ,  G01R17/10 ,  G01R33/0011 ,  G01R33/093 ,  G01R33/096

Abstract: In one embodiment, a TMR field sensor utilizes existing one or more self-test current lines in a configuration to extend magnetic field measurement range without sacrificing measurement sensitivity. The self-test current lines are energized to facilitate magnetic field measurement when the measured magnetic field reaches a threshold. The magnetic field created by self-test coil opposes an external magnetic field being measured to keep the net magnetic field within a desired range where the magnetic field sensor has linear output and desired sensitivity.

Abstract translation: 在一个实施例中，TMR场传感器利用配置中的现有一个或多个自测电流线来扩展磁场测量范围而不牺牲测量灵敏度。 当测量的磁场达到阈值时，自检电流线路通电以便于磁场测量。 由自测线圈产生的磁场与被测量的外部磁场相反，以将净磁场保持在磁场传感器具有线性输出和所需灵敏度的期望范围内。

公开(公告)号：WO2016057063A1

公开(公告)日：2016-04-14

申请号：PCT/US2015/000112

申请日：2015-10-09

Applicant: EVERSPIN TECHNOLOGIES, INC.

Inventor： SLAUGHTER, Jon ,  JANESKY, Jason, Allen

IPC: G11C11/14

CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/1659 ,  G11C11/1673 ,  G11C13/0002 ,  G11C13/0097 ,  G11C17/16 ,  G11C17/18 ,  G11C29/006 ,  G11C29/06

Abstract: Techniques and circuits for storing and retrieving data using spin-torque magnetic memory cells as anti-fuses are presented. Circuits are included to allow higher-magnitude voltages and currents to be applied to magnetic memory cells to intentionally break down the dielectric layer included the magnetic tunnel junction. Magnetic memory cells having a normal-resistance magnetic tunnel junction with an intact dielectric layer are used to store a first data state, and magnetic memory cells having a magnetic tunnel junction with a broken-down dielectric layer are used to store a second data state. Data can be stored in such a manner during wafer probe and then later read out directly or copied into other magnetic or non-magnetic memory on the device for use in operations after the device is included in a system.

Abstract translation: 提出了使用自旋扭矩磁存储单元作为抗熔丝来存储和检索数据的技术和电路。 包括电路以允许将更大幅度的电压和电流施加到磁存储器单元以有意地分解包括磁性隧道结的介电层。 使用具有与完整电介质层的正电阻磁隧道结的磁存储单元来存储第一数据状态，并且使用具有与分解电介质层的磁性隧道结的磁存储单元来存储第二数据状态。 可以在晶片探测期间以这种方式存储数据，然后在设备被包括在系统中之后，随后直接读出或复制到设备上的其他磁性或非磁性存储器中以用于操作。

公开(公告)号：WO2016028590A1

公开(公告)日：2016-02-25

申请号：PCT/US2015/045001

申请日：2015-08-13

Applicant: EVERSPIN TECHNOLOGIES, INC.

Inventor： HOUSSAMEDDINE, Dimitri ,  SLAUGHTER, Jon

IPC: G11C11/16

CPC classification number: G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1695 ,  G11C11/1697 ,  G11C29/70 ,  G11C29/74 ,  G11C29/838 ,  G11C2213/78 ,  G11C2213/79

Abstract: Memory cells in a spin-torque magnetic random access memory (MRAM) include at least two magnetic tunnel junctions within each memory cell, where each memory cell only stores a single data bit of information. Access circuitry coupled to the memory cells are able to read from and write to a memory cell even when one of the magnetic tunnel junctions within the memory cell is defective and is no longer functional. Self-referenced and referenced reads can be used in conjunction with the multiple magnetic tunnel junction memory cells. In some embodiments, writing to the memory cell forces all magnetic tunnel junctions into a known state, whereas in other embodiments, a subset of the magnetic tunnel junctions are forced to a known state.

Abstract translation: 自旋扭矩磁随机存取存储器（MRAM）中的存储单元包括每个存储器单元内的至少两个磁性隧道结，其中每个存储器单元仅存储单个数据位的信息。 耦合到存储器单元的访问电路即使当存储器单元内的磁隧道结之一有缺陷并且不再起作用时，也能够从存储单元读取和写入存储单元。 自参考和参考读取可以与多个磁性隧道结存储器单元结合使用。 在一些实施例中，向存储器单元的写入迫使所有磁隧道结进入已知状态，而在其它实施例中，磁性隧道结的子集被强制为已知状态。

公开(公告)号：WO2016014296A1

公开(公告)日：2016-01-28

申请号：PCT/US2015/040436

申请日：2015-07-14

Applicant: EVERSPIN TECHNOLOGIES, INC.

Inventor： MUDIVARTHI, Chaitanya ,  AGGARWAL, Sanjeev

IPC: H01L29/82

CPC classification number: H01L43/12 ,  H01L43/02 ,  H01L43/08

Abstract: A via underlying a magnetoresistive device is formed to include a lower portion that includes a first material and an upper portion that includes a second material, where the second material is part of the material making up the bottom electrode of the magnetoresistive device. The via is formed by partially filling a via hole with the first material and then filling the remaining portion of the via hole when a layer of the second material is deposited to form the basis for the bottom electrode. The layer of second material is polished to provide a planar surface on which to form the magnetoresistive stack and top electrode. After forming the magnetoresistive stack and top electrode, the layer of second material is etched to form the bottom electrode. Such a via allows the magnetoresistive stack to be formed directly over the via, thereby reducing the area required for each device and increasing density in applications such as MRAMs.

Abstract translation: 形成在磁阻器件下方的通孔形成为包括下部，其包括第一材料和包括第二材料的上部，其中第二材料是组成磁阻器件的底部电极的材料的一部分。 所述通孔是通过用第一材料部分地填充通孔而形成的，然后当沉积第二材料的一层以形成底部电极的基底时，填充通孔的剩余部分。 第二材料层被抛光以提供平面，在其上形成磁阻堆叠和顶电极。 在形成磁阻堆叠和顶电极之后，蚀刻第二材料层以形成底电极。 这样的通孔允许直接在通孔上形成磁阻堆叠，从而减少每个器件所需的面积，并增加诸如MRAM之类的应用中的密度。

公开(公告)号：WO2015138421A9

公开(公告)日：2015-09-17

申请号：PCT/US2015/019659

申请日：2015-03-10

Applicant: EVERSPIN TECHNOLOGIES, INC.

Inventor： ANDRE, Thomas

IPC: G11C11/02

Abstract: In some examples, a nonvolatile storage element may be configured to store a state or value during a low power or powered down period of a circuit. For example, the nonvolatile storage element may include a bridge of resistive elements that have a resistive state that may be configured by applying voltages to multiple drive paths. A sense amplifier may be connected to the bridge in order to resolve a voltage differential associated with the bridge to ether power or ground and, thereby determine the state associated with on the nonvolatile storage element.

Abstract translation: 在一些示例中，非易失性存储元件可以被配置为在电路的低功率或断电期间存储状态或值。 例如，非易失性存储元件可以包括具有电阻状态的电阻元件的电桥，该电阻状态可以通过将电压施加到多个驱动路径来配置。 读出放大器可以连接到电桥，以便解析与电桥相关的电压差，从而确定与非易失性存储元件相关联的状态。

公开(公告)号：WO2013169592A3

公开(公告)日：2015-06-18

申请号：PCT/US2013039463

申请日：2013-05-03

Applicant: LIU LIANJUN ,  MATHER PHILLIP ,  EVERSPIN TECHNOLOGIES INC

Inventor： LIU LIANJUN ,  MATHER PHILLIP

IPC: G01R33/02

CPC classification number: G01R33/09 ,  G01R33/0035 ,  G01R33/0206 ,  G01R33/093 ,  G01R35/00 ,  G01R35/005

Abstract: A structure and method are provided for self-test of a Z axis sensor. Two self-test current lines are symmetrically positioned adjacent, but equidistant from, each sense element. The vertical component of the magnetic field created from a current in the self-test lines is additive in a flux guide positioned adjacent, and orthogonal to, the sense element; however, the components of the magnetic fields in the plane of the sense element created by each of the two self-test current line pairs cancel one another at the sense element center, resulting in only the Z axis magnetic field being sensed during the self-test.

Abstract translation: 提供了一种用于Z轴传感器自检的结构和方法。 两条自测电流线对称地定位在与每个感测元件相邻但等距离的位置。 由自检线中的电流产生的磁场的垂直分量在与感测元件相邻且正交的位置处的磁通导向器中是相加的; 然而，由两个自检电流线对中的每一个产生的感测元件的平面中的磁场的分量在感测元件中心彼此抵消，导致在自适应期间仅感测到Z轴磁场， 测试。

公开(公告)号：WO2015009331A1

公开(公告)日：2015-01-22

申请号：PCT/US2014/011634

申请日：2014-01-15

Applicant: ALAM, Syed M. ,  ANDRE, Thomas ,  EVERSPIN TECHNOLOGIES, INC.

Inventor： ALAM, Syed M. ,  ANDRE, Thomas

IPC: G06F12/00 ,  G06F12/10

CPC classification number: G06F11/1096 ,  G06F11/1064 ,  G06F12/0882 ,  G06F2211/109 ,  G06F2212/652 ,  G11C14/0036

Abstract: In some examples, a memory device is configured to load multiple pages of an internal page size into a cache in response to receiving an activate command and to write multiple pages of the internal page size into a memory array in response to receiving a precharge command. In some implementations, the memory array is arranged to store multiple pages of the internal page size in a single physical row.

Abstract translation: 在一些示例中，存储器设备被配置为响应于接收到激活命令而将内部页面大小的页面加载到高速缓存中，并且响应于接收到预充电命令而将内部页面大小的多页写入存储器阵列。 在一些实现中，存储器阵列被布置成在单个物理行中存储内部页面大小的多个页面。

公开(公告)号：WO2014121123A1

公开(公告)日：2014-08-07

申请号：PCT/US2014/014265

申请日：2014-01-31

Applicant: DESHPANDE, Sarin A. ,  AGGARWAL, Sanjeev ,  EVERSPIN TECHNOLOGIES, INC.

Inventor： DESHPANDE, Sarin A. ,  AGGARWAL, Sanjeev

IPC: H01L21/00

CPC classification number: H01L43/12

Abstract: A method of manufacturing a magnetoresistive-based device includes etching a hard mask layer, the etching having a selectivity greater than 2:1 and preferably less than 5:1 of the hard mask layer to a photo resist thereover. Optionally, the photo resist is trimmed prior to the etch, and oxygen may be applied during or just subsequent to the trim of the photo resist to increase side shrinkage. An additional step includes an oxygen treatment during the etch to remove polymer from the structure and etch chamber.

Abstract translation: 一种制造基于磁阻的器件的方法包括蚀刻硬掩模层，蚀刻具有大于硬掩模层的选择性大于2:1且优选小于5:1的光刻胶。 任选地，在蚀刻之前修整光致抗蚀剂，并且可以在光刻胶的修剪期间期间或之后施加氧气以增加侧收缩。 另外的步骤包括在蚀刻期间从结构和蚀刻室去除聚合物的氧处理。

公开(公告)号：WO2013154991A3

公开(公告)日：2013-12-05

申请号：PCT/US2013035613

申请日：2013-04-08

Applicant: THOMAS ANDRE ,  ALAM SYED ,  SUBRAMANIAN CHITRA ,  EVERSPIN TECHNOLOGIES INC

Inventor： ANDRE THOMAS ,  ALAM SYED ,  SUBRAMANIAN CHITRA

IPC: G11C11/00

CPC classification number: G11C11/1675 ,  G11C7/02 ,  G11C7/065 ,  G11C11/16 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1693 ,  G11C2013/0057 ,  G11C2207/002

Abstract: Circuitry and a method provide a plurality of timed control and bias voltages to sense amplifiers and write drivers of a spin-torque magnetoresistive random access memory array for improved power supply noise rejection, increased sensing speed with immunity for bank-to-bank noise coupling, and reduced leakage from off word line select devices in an active column.

Abstract translation: 电路和方法提供多个定时控制和偏置电压以读取放大器和自旋扭矩磁阻随机存取存储器阵列的写入驱动器，用于改善电源噪声抑制，增加感测速度，并具有对存储体间噪声耦合的免疫性， 并减少有源列中关闭字线选择器件的泄漏。