公开(公告)号：WO2020187720A1

公开(公告)日：2020-09-24

申请号：PCT/EP2020/056760

申请日：2020-03-13

Applicant: TRINAMIX GMBH

Inventor： HERMES, Wilfried ,  VALOUCH, Sebastian ,  MUELLER, Sebastian ,  HOEH, Regina ,  BECHTEL, Heidi ,  ALTENBECK, Timo ,  DITTMANN, Fabian ,  FEUERSTEIN, Bertram ,  HUPFAUER, Thomas ,  HANDRECK, Anke ,  GUST, Robert ,  KALETTA, Peter Paul ,  SEND, Robert ,  WAINDOK, Hubert ,  HENNIG, Ingolf ,  GURIYANOVA, Svetlana

IPC: H01L31/09 ,  H01L31/032 ,  H01L31/0216 ,  H01L21/66

Abstract: The present invention relates to an optical sensor (110) comprising a stack (125) of a substrate (124), a layer (112) of at least one photoconductive material (114) which is applied to the substrate (124) and a cover (116) covering accessible surfaces of the photoconductive material, and at least two electrical contacts (136, 136') which contact the layer (112) of the photoconductive material (114). When the optical sensor exhibits in a quasi-static nanoindenter measurement of the stack a Young's modulus • at a penetration depth of 100 nm of 75 GPa to 107 GPa, • at the penetration depth of 300 nm of 47 GPa to 127 GPa, • at the penetration depth of 1000 nm of 49 GPa to 119 GPa, and and a hardness • at the penetration depth of 100 nm of 1.20 GPa to 4.70 GPa, • at the penetration depth of 300 nm of 1.60 GPa to 4.60 GPa and • at the penetration depth of 1000 nm of 1.60 GPa to 8.00 GPa, the optical sensor (110) exhibits high performance and stability over a long time. The optical sensor (110) is specifically designed for application as a safety related-device, such as a gas sensor, a spark sensor, or a flame sensor, as well as for application in the field of security technology.

公开(公告)号：WO2020167723A1

公开(公告)日：2020-08-20

申请号：PCT/US2020/017609

申请日：2020-02-11

Applicant: RENSSELAER POLYTECHNIC INSTITUTE

Inventor： SHAO, Dali ,  SAWYER, Shayla, Maya ,  LIAN, Jie

IPC: H01L51/44 ,  H01L31/101 ,  H01L31/09

Abstract: A hybrid fiber for detection of UV light is described. The hybrid fiber includes a conductor, a first layer, a photoactive layer, a second layer, and a transparent electrode. The conductor includes a conductive material. The first layer includes a first material deposited onto the conductor. The first material is configured to transport holes and block electrons. The photoacfive layer includes a photoactive material coating the first layer. The photoactive material includes a first submaterial and a second submaterial. The second layer includes a second material deposited onto the photoactive layer. The second material is configured to block holes and transport electrons. The transparent electrode indudes a transparent electrode material deposited onto the second layer.

公开(公告)号：WO2020081441A1

公开(公告)日：2020-04-23

申请号：PCT/US2019/056091

申请日：2019-10-14

Applicant: ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY ,  BOARD OF REGENTS OF THE UNIVERSITY OF OKLAHOMA

Inventor： FERRY, David ,  WHITESIDE, Vincent ,  SELLERS, Ian, R.

IPC: H01L31/02 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/072 ,  H01L31/0725 ,  H01L31/09 ,  H01L31/101

Abstract: A photovoltaic device configured to substantially avoid radiative recombination of photo-generated carriers, reduce loss of energy of the photo-generated carriers through the phonon emission, extract photo-generated carriers substantially exclusively from the multi-frequency satellite valley(s) of the bandstructure of the used semiconductor material as opposed to the single predetermined extremum of the bandstructure. Methodologies of fabrication and operation of such a device.

公开(公告)号：WO2019122454A1

公开(公告)日：2019-06-27

申请号：PCT/EP2018/086845

申请日：2018-12-24

Applicant: FUNDACIÓ INSTITUT DE CIÈNCIES FOTÒNIQUES ,  INSTITUCIÓ CATALANA DE RECERCA I ESTUDIS AVANCATS ,  ASOCIACIÓN CENTRO DE INVESTIGACIÓN COOPERATIVA EN NANOCIENCIAS, CIC NANOGUNE

Inventor： TIELROOIJ, Klaas-Jan ,  KOPPENS, Frank

IPC: H01L31/02 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/09 ,  H01L31/113

CPC classification number: H01L31/028 ,  H01L31/02002 ,  H01L31/022408 ,  H01L31/035209 ,  H01L31/09 ,  H01L31/113

Abstract: The present invention relates to a device for operating with THz and/or IR and/or MW radiation, comprising: -an antenna having one or more antenna branches (A1; A1, A2) and adapted to operate in the THz and/or IR and/or MW frequency range; and -a structure made of at least one photoactive material defining a photo-active area (Ga) arranged to absorb light radiation impinging thereon. The focus area of the at least one antenna branch (A1; A1, A2) is dimensionally equal or smaller than the photo-active area (Ga).

公开(公告)号：WO2018019921A1

公开(公告)日：2018-02-01

申请号：PCT/EP2017/068956

申请日：2017-07-27

Applicant: TRINAMIX GMBH

Inventor： HERMES, Wilfried ,  VALOUCH, Sebastian ,  SEND, Robert ,  BRUDER, Ingmar ,  FEUERSTEIN, Bertram

IPC: H01L31/09 ,  H01L31/02 ,  H01L31/0203 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/18 ,  G01S7/481

Abstract: The present invention relates to an optical sensor, a detector comprising the optical sensor for an optical detection of at least one object, a method for manufacturing the optical sensor and various uses of the optical sensor and the detector. Furthermore, the invention relates to a human-machine interface, an entertainment device, a scanning system, a tracking system, a stereoscopic system,and a camera. The optical sensor (110) comprises a layer (112) of at least one photoconductive material (114), at least two individual electrical contacts (136, 136') contacting the layer (112) of the photoconductive material (114), and a cover layer (116) deposited on the layer (112) of the photoconductive material (114), wherein the cover layer (116) is an amorphous layer comprising at least one metal-containing compound (120). The optical sensor (110) can be supplied as a non-bulkyhermetic package which, nevertheless, provides a high degree of protection against possible degradation by humidity and/or oxygen. Moreover, the cover layer (116) is capable of activating the photoconductive material (114) which results in an increased performance of the optical sensor (110). Further, the optical sensor (110) may be easily manufactured and integrated on a circuit carrier device.

Abstract translation: 本发明涉及光学传感器，包括用于光学检测至少一个物体的光学传感器的检测器，制造光学传感器的方法以及光学传感器和检测器的各种用途 。 此外，本发明涉及人机界面，娱乐设备，扫描系统，跟踪系统，立体系统和相机。 光学传感器（110）包括至少一个光电导材料（114）的层（112），与光电导材料（114）的层（112）接触的至少两个单独的电触点（136,136'），以及 （114）的层（112）上沉积的覆盖层（116），其中覆盖层（116）是包含至少一种含金属化合物（120）的非晶层。 光学传感器（110）可以作为非膨大密封包装供应，然而其提供高度保护以防止由湿气和/或氧气导致的可能降解。 此外，覆盖层（116）能够激活光电导材料（114），这导致光学传感器（110）的性能提高。 此外，光学传感器（110）可以容易地制造并集成在电路载体装置上。

公开(公告)号：WO2017043704A1

公开(公告)日：2017-03-16

申请号：PCT/KR2015/013790

申请日：2015-12-16

Applicant: 인천대학교 산학협력단

Inventor： 김준동 ,  파텔말케시쿠마르 ,  김홍식

IPC: H01L31/09 ,  G01J1/42 ,  H01L31/109 ,  H01L31/0236 ,  H01L31/0392 ,  G01R1/067

CPC classification number: G01J1/42 ,  G01R1/067 ,  H01L31/0236 ,  H01L31/0392 ,  H01L31/09 ,  H01L31/109 ,  Y02E10/50

Abstract: 자외선 포토 디텍터 및 그 제조방법을 제공한다. 상기 자외선 포토 디텍터는 기판, 상기 기판 상에 형성되는 투명 전도층, 상기 투명 전도층 상에 형성되는 제1 도전형의 제1 접합층과, 상기 제1 접합층과 이종 접합(hetero junction)을 이루는 상기 제1 도전형과 다른 제2 도전형의 제2 접합층을 포함하는 이종 접합층을 포함한다.

Abstract translation: 提供一种紫外光电探测器及其制造方法。 紫外光检测器包括：基板; 形成在所述基板上的透明导电层; 以及异质结层，其包括形成在所述透明导电层上的第一导电类型的第一接合层和与所述第一导电类型不同的第二导电类型的第二接合层，所述第二接合层构成第二接合层 与第一结层的异质结。

公开(公告)号：WO2016097975A1

公开(公告)日：2016-06-23

申请号：PCT/IB2015/059592

申请日：2015-12-14

Applicant: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE ,  ECOLE NORMALE SUPERIEURE

Inventor： DHILLON, Sukhdeep ,  MAUSSANG, Kenneth

IPC: H01L31/08 ,  H01L31/09

CPC classification number: G01J3/0205 ,  G01J3/28 ,  G01N21/3586 ,  H01L31/0304 ,  H01L31/08 ,  H01L31/09

Abstract: The present invention relates to a metal-metal interdigitated photoconductive antenna that generates and/or detects terahertz waves, the photoconductive antenna comprising at least one substrate (1) and at least one electrode (2) on the front face of the substrate (1), wherein said photoconductive antenna comprises at least one layer (4) formed of a material reflective to terahertz waves, said layer (4) extending below the front face of the substrate (1) at a distance lower than the wavelength; and it comprises an interdigitated geometry on said front face of the substrate (1) comprising a first metallization layer of 5 nm Cr and 150 nm Au for the interdigitated electrodes (2), equally spaced by a distance Δ, is made on said front face of the substrate (1); a 500 nm-thick layer of SiO 2 (5) deposited over the first metallization layer; and a second metallic layer composed of metallic fingers (6) covering gaps with a periodicity double that of the distance Δ.

Abstract translation: 本发明涉及一种产生和/或检测太赫兹波的金属 - 金属叉指光导天线，该光电导天线包括至少一个基板（1）和至少一个在基板（1）的正面上的电极（2） ，其中所述光电导天线包括由反射太赫兹波的材料形成的至少一个层（4），所述层（4）在比所述波长低的距离处在所述衬底（1）的正面下方延伸; 并且其包括在所述基板（1）的所述前表面上的叉指几何形状，其包括在所述前表面上等距间隔开的交叉电极（2）的5nm的Cr和150nm的Au的第一金属化层 的基板（1）; 沉积在第一金属化层上的500nm厚的SiO 2层（5）; 以及由金属指状物（6）构成的第二金属层，其覆盖间隔距离Δ的周期性倍的间隙。

公开(公告)号：WO2015176911A1

公开(公告)日：2015-11-26

申请号：PCT/EP2015/058821

申请日：2015-04-23

Applicant: AMS AG

Inventor： KOPPITSCH, Günther ,  MINIXHOFER, Rainer

IPC: H01L31/09 ,  H01L31/101 ,  H01L31/0232 ,  H01L31/0236 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01L31/02366 ,  H01L31/02325 ,  H01L31/02327 ,  H01L31/02363 ,  H01L31/09 ,  H01L31/101 ,  Y02E10/50

Abstract: The semiconductor device comprises a semiconductor substrate (2), a transition layer (5) in or on the semiconductor substrate, the transition layer allowing propagation of incident radiation (7) according to a refractive index, and a photonic component (4) facing the transition layer. A surface (6) of the transition layer is structured such that the effective refractive index is gradually changed through the transition layer with changing distance from the photonic component.

Abstract translation: 半导体器件包括半导体衬底（2），半导体衬底中或其上的过渡层（5），允许根据折射率传播入射辐射（7）的过渡层和面向 过渡层。 过渡层的表面（6）被构造成使得有效折射率随着与光子分量的距离变化而通过过渡层逐渐改变。

公开(公告)号：WO2014159804A8

公开(公告)日：2015-07-23

申请号：PCT/US2014025199

申请日：2014-03-13

Applicant: UES INC ,  BHATTACHARYA RABI S ,  EVAN HOWARD BLANE JR

Inventor： BHATTACHARYA RABI S ,  EVAN HOWARD BLANE JR

IPC: H01L31/09 ,  H01L31/0304

CPC classification number: H01L31/09 ,  H01L31/0304 ,  Y02E10/544

Abstract: A photoconductive semiconductor switch comprising a photoconductive GaAs substrate having a pair of spaced metal contacts on a surface thereof, the spaced metal contacts opposite ends of a switching gap, the switching gap having a plurality of lateral current flow preventing channels therein, the channels being formed by ion implantation of the GaAs substrate in the channels.

Abstract translation: 一种光电导半导体开关，其包括在其表面上具有一对间隔开的金属触点的光电导GaAs衬底，所述间隔开的金属接触开关间隙的相对端，所述开关间隙在其中具有多个防止流动的流动通道，所述沟道形成 通过在沟道中离子注入GaAs衬底。

公开(公告)号：WO2014185587A1

公开(公告)日：2014-11-20

申请号：PCT/KR2013/005886

申请日：2013-07-03

Applicant: 경희대학교 산학협력단

Inventor： 최석호 ,  김성 ,  김창오 ,  신동희

IPC: H01L31/09

CPC classification number: H01L31/035218 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/182 ,  H01L31/028 ,  H01L31/09 ,  Y02E10/547

Abstract: 상기 그래핀 광검출 장치는 제1 그래핀, 제1 그래핀 상에 형성되고, 복수 개의 그래핀 양자점을 구비하는 그래핀 양자점 층, 및 상기 그래핀 양자점 층 상에 마련된 제2 그래핀을 포함한다. 또한, 그래핀 양자점 광검출 장치의 제조 방법은 제1 그래핀을 형성시키는 단계, 상기 제1 그래핀 상에 그래핀 양자점을 구비하는 그래핀 양자점층을 형성하는 단계, 및 상기 그래핀 양자점 층 상에 제2 그래핀을 형성시켜 제1 그래핀/그래핀 양자점 층/제2 그래핀이 제작되는 단계를 포함한다. 본 발명의 실시예에 따른 그래핀 양자점 광검출 장치는 대면적 그래핀 제작 기술 및 그래핀 양자점 제작 기술을 이용하여 그래핀으로만 이루어진 광검출기를 고안하고 제작하여 검출능 및 응답 속도가 빠르며, 넓은 광대역에서 광반응도 등의 성능이 우수하다.

Abstract translation: 石墨烯光电探测器包括：第一石墨烯; 形成在第一石墨烯上并具有多个石墨烯量子点的石墨烯量子点层; 以及设置在石墨烯量子点层上的第二石墨烯。 另外，制造石墨烯量子点光电检测器的方法包括以下步骤：形成第一石墨烯; 在第一石墨烯上形成具有石墨烯量子点的石墨烯量子点层; 并且通过在石墨烯量子点层上形成第二石墨烯来制造第一石墨烯/石墨烯量子点层/第二石墨烯。 根据本发明的一个实施例的石墨烯量子点光电检测器，使用大面积石墨烯制造技术和石墨烯量子点制造技术来设计和制造仅包括石墨烯的光电检测器，从而具有高速可检测性和响应性和显示性 宽带，光反应性等优异的性能。