公开(公告)号：WO03044078A9

公开(公告)日：2004-01-08

申请号：PCT/US0236327

申请日：2002-11-12

Applicant: HONEYWELL INT INC ,  BALDWIN TERESA ,  KENNEDY JOSEPH ,  IWAMOTO NANCY ,  NAKANO TADASHI ,  BEDWELL WILLIAM ,  STUCK JASON ,  HEBERT MELLO ,  SUEDMEYER ARLENE

Inventor： BALDWIN TERESA ,  KENNEDY JOSEPH ,  IWAMOTO NANCY ,  NAKANO TADASHI ,  BEDWELL WILLIAM ,  STUCK JASON ,  HEBERT MELLO ,  SUEDMEYER ARLENE

IPC: C08G77/04 ,  C09D183/04 ,  G03F7/09 ,  C08G77/08 ,  C08G77/18

CPC classification number: C08G77/04 ,  C09D183/04 ,  G03F7/091

Abstract: Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compound and at least one material modification agent, such as at least one porogen, at least one high-boiling solvent, at least one capping agent, at least one leveling agent, at least one catalyst, at least one replacement solvent, at least one pH tuning agent, and/or a combination thereof that are incorporated into inorganic-based materials or inorganic compositions and/or compounds. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography.

Abstract translation: 用于紫外光刻的抗反射涂层材料包括至少一种吸收化合物和至少一种材料改性剂，例如至少一种致孔剂，至少一种高沸点溶剂，至少一种封端剂，至少一种流平剂， 至少一种催化剂，至少一种替代溶剂，至少一种pH调节剂和/或其组合，其掺入无机基材料或无机组合物和/或化合物中。 合适的吸收化合物是可以在光刻中使用的波长如365nm，248nm，193nm和157nm的那些吸收化合物。

公开(公告)号：WO2003044079A1

公开(公告)日：2003-05-30

申请号：PCT/US2002/035101

申请日：2002-10-31

Applicant: HONEYWELL INTERNATIONAL INC. ,  BALDWIN, Teresa ,  HACKER, Nigel ,  KENNEDY, Joseph ,  SPEAR, Richard

Inventor： BALDWIN, Teresa ,  HACKER, Nigel ,  KENNEDY, Joseph ,  SPEAR, Richard

IPC: C08G77/12

CPC classification number: G02B5/23 ,  C03C17/008 ,  C03C17/30 ,  C08G77/04 ,  C08G77/12 ,  C08K5/0008 ,  C09D183/04 ,  C09D183/06 ,  C09D183/08 ,  G03F7/091 ,  H01L21/0276 ,  Y10T428/31663 ,  C08L83/04 ,  C08L2666/28

Abstract: Anti-reflective coating materials for ultraviolet photolithography include at least one organic light-absorbing compound incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining at least one organic absorbing compound with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.

Abstract translation: 用于紫外光刻的抗反射涂层材料包括掺入旋涂玻璃材料中的至少一种有机光吸收化合物。 合适的吸收化合物在可用于光刻的诸如365nm，248nm，193nm和157nm的波长周围的波长范围上是强吸收的。 制造吸收旋涂玻璃材料的方法包括在旋涂玻璃材料的合成期间将至少一种有机吸收化合物与烷氧基硅烷或卤代硅烷反应物组合。

公开(公告)号：WO2003044078A1

公开(公告)日：2003-05-30

申请号：PCT/US2002/036327

申请日：2002-11-12

Applicant: HONEYWELL INTERNATIONAL INC. ,  BALDWIN, Teresa ,  KENNEDY, Joseph ,  IWAMOTO, Nancy ,  NAKANO, Tadashi ,  BEDWELL, William ,  STUCK, Jason ,  HEBERT, Mello ,  SUEDMEYER, Arlene

Inventor： BALDWIN, Teresa ,  KENNEDY, Joseph ,  IWAMOTO, Nancy ,  NAKANO, Tadashi ,  BEDWELL, William ,  STUCK, Jason ,  HEBERT, Mello ,  SUEDMEYER, Arlene

IPC: C08G77/08

CPC classification number: C08G77/04 ,  C09D183/04 ,  G03F7/091

Abstract: Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compound and at least one material modification agent, such as at least one porogen, at least one high-boiling solvent, at least one capping agent, at least one leveling agent, at least one catalyst, at least one replacement solvent, at least one pH tuning agent, and/or a combination thereof that are incorporated into inorganic-based materials or inorganic compositions and/or compounds. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography.

Abstract translation: 用于紫外光刻的抗反射涂层材料包括至少一种吸收化合物和至少一种材料改性剂，例如至少一种造孔剂，至少一种高沸点溶剂，至少一种封端剂，至少一种流平剂， 至少一种催化剂，至少一种替代溶剂，至少一种pH调节剂和/或其组合，其掺入无机基材料或无机组合物和/或化合物中。 合适的吸收化合物是可以在光刻中使用的波长如365nm，248nm，193nm和157nm的那些吸收化合物。

公开(公告)号：WO2004044025A2

公开(公告)日：2004-05-27

申请号：PCT/US2003/036354

申请日：2003-11-12

Applicant: HONEYWELL INTERNATIONAL INC ,  BALDWIN, Teresa ,  KENNEDY, Joseph ,  IWAMOTO, Nancy ,  NAKANO, Tadashi ,  BEDWELL, William ,  STUCK, Jason ,  SUEDEMEYER, Arlene ,  HEBERT, Mello ,  LI, Bo

Inventor： BALDWIN, Teresa ,  KENNEDY, Joseph ,  IWAMOTO, Nancy ,  NAKANO, Tadashi ,  BEDWELL, William ,  STUCK, Jason ,  SUEDEMEYER, Arlene ,  HEBERT, Mello ,  LI, Bo

IPC: C08G

CPC classification number: C08G77/14 ,  C08G77/22 ,  C09D183/06 ,  C09D183/08 ,  G03F7/0757 ,  G03F7/091

Abstract: Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compound and at least one material modification agent, such as at least one porogen, at least one high-boiling solvent, at least one densifying agent, at least one capping agent, at least one leveling agent, at least one catalyst, at least one replacement solvent, at least one pH tuning agent, and/or a combination thereof that are incorporated into inorganic-based materials or inorganic compositions and/or compounds. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography.

Abstract translation: 用于紫外光刻的抗反射涂层材料包括至少一种吸收化合物和至少一种材料改性剂，例如至少一种致孔剂，至少一种高沸点溶剂，至少一种致密剂 ，至少一种封端剂，至少一种流平剂，至少一种催化剂，至少一种置换溶剂，至少一种pH调节剂和/或其组合和/或掺入无机基材料或无机组合物和/ 或化合物。 合适的吸收化合物是吸收可用于光刻法的波长例如365nm，248nm，193nm和157nm附近的吸收化合物。

公开(公告)号：WO2004044025A8

公开(公告)日：2004-10-07

申请号：PCT/US0336354

申请日：2003-11-12

Applicant: HONEYWELL INT INC ,  BALDWIN TERESA ,  KENNEDY JOSEPH ,  IWAMOTO NANCY ,  NAKANO TADASHI ,  BEDWELL WILLIAM ,  STUCK JASON ,  SUEDEMEYER ARLENE ,  HEBERT MELLO ,  LI BO

Inventor： BALDWIN TERESA ,  KENNEDY JOSEPH ,  IWAMOTO NANCY ,  NAKANO TADASHI ,  BEDWELL WILLIAM ,  STUCK JASON ,  SUEDEMEYER ARLENE ,  HEBERT MELLO ,  LI BO

IPC: C08G20060101 ,  C08G77/02 ,  C08G77/14 ,  C08G77/18 ,  C08G77/22 ,  C08L83/06 ,  C09D183/06 ,  C09D183/08 ,  G03F7/075 ,  G03F7/09

CPC classification number: C08G77/14 ,  C08G77/22 ,  C09D183/06 ,  C09D183/08 ,  G03F7/0757 ,  G03F7/091

Abstract: Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compound and at least one material modification agent, such as at least one porogen, at least one high-boiling solvent, at least one densifying agent, at least one capping agent, at least one leveling agent, at least one catalyst, at least one replacement solvent, at least one pH tuning agent, and/or a combination thereof that are incorporated into inorganic-based materials or inorganic compositions and/or compounds. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography.

Abstract translation: 用于紫外光刻的抗反射涂层材料包括至少一种吸收化合物和至少一种材料改性剂，例如至少一种致孔剂，至少一种高沸点溶剂，至少一种致密剂，至少一种封端剂， 至少一种流平剂，至少一种催化剂，至少一种置换溶剂，至少一种pH调节剂和/或其组合，其掺入无机基材料或无机组合物和/或化合物中。 合适的吸收化合物是吸收可用于光刻的波长（例如365nm，248nm，193nm和157nm）附近的吸收化合物。

公开(公告)号：WO2004044025A3

公开(公告)日：2004-07-15

申请号：PCT/US0336354

申请日：2003-11-12

Applicant: HONEYWELL INT INC ,  BALDWIN TERESA ,  KENNEDY JOSEPH ,  IWAMOTO NANCY ,  NAKANO TADASHI ,  BEDWELL WILLIAM ,  STUCK JASON ,  SUEDEMEYER ARLENE ,  HEBERT MELLO ,  LI BO

Inventor： BALDWIN TERESA ,  KENNEDY JOSEPH ,  IWAMOTO NANCY ,  NAKANO TADASHI ,  BEDWELL WILLIAM ,  STUCK JASON ,  SUEDEMEYER ARLENE ,  HEBERT MELLO ,  LI BO

IPC: C08G20060101 ,  C08G77/02 ,  C08G77/14 ,  C08G77/18 ,  C08G77/22 ,  C08L83/06 ,  C09D183/06 ,  C09D183/08 ,  G03F7/075 ,  G03F7/09

CPC classification number: C08G77/14 ,  C08G77/22 ,  C09D183/06 ,  C09D183/08 ,  G03F7/0757 ,  G03F7/091

Abstract: Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compound and at least one material modification agent, such as at least one porogen, at least one high-boiling solvent, at least one densifying agent, at least one capping agent, at least one leveling agent, at least one catalyst, at least one replacement solvent, at least one pH tuning agent, and/or a combination thereof that are incorporated into inorganic-based materials or inorganic compositions and/or compounds. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography.

Abstract translation: 用于紫外光刻的抗反射涂层材料包括至少一种吸收化合物和至少一种材料改性剂，例如至少一种致孔剂，至少一种高沸点溶剂，至少一种致密化剂，至少一种封端剂， 至少一种流平剂，至少一种催化剂，至少一种置换溶剂，至少一种pH调节剂，和/或其组合，其掺入无机基材料或无机组合物和/或化合物中。 合适的吸收化合物是可以在光刻中使用的波长如365nm，248nm，193nm和157nm的那些吸收化合物。

公开(公告)号：WO2003044600A1

公开(公告)日：2003-05-30

申请号：PCT/US2001/045306

申请日：2001-11-15

Applicant: HONEYWELL INTERNATIONAL INC. ,  BALDWIN, Teresa ,  KENNEDY, Joseph

Inventor： BALDWIN, Teresa ,  KENNEDY, Joseph

IPC: G03C1/492

CPC classification number: G03F7/091 ,  C08G77/04 ,  C09D5/006 ,  C09D183/04 ,  Y10T428/31663

Abstract: Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compounds and at least one pH tuning agent that are incorporated into spin-on materials. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography. Suitable pH tuning agents not only adjust the pH of the final spin-on composition, but also influence the chemical performance and characteristics, mechanical performance and structural makeup of the final spin-on composition that is part of the layered material, electronic component or semiconductor component, such that the final spin-on composition is more compatible with the resist material that is coupled to it. More specifically, the pH tuning agent strong influences the polymeric characteristics, the structural makeup and the spatial orientation that results in increasing the surface properties of the anti-reflective coating for optimal resist performance. In other words, a pH tuning agent that merely adjusts the pH of the spin-on material without influencing the mechanical properties and structural makeup of the spin-on composition or the coupled resist material is not contemplated herein. A method of making absorbing and pH tuned spin-on materials includes combining at least one organic absorbing compound and at least one pH tuning agent with at least one silane reactant during synthesis of the spin-on materials and compositions.

Abstract translation: 用于紫外光刻的抗反射涂层材料包括至少一种吸收化合物和至少一种掺入旋涂材料中的pH调节剂。 合适的吸收化合物是可以在光刻中使用的波长如365nm，248nm，193nm和157nm的那些吸收化合物。 合适的pH调节剂不仅调节最终旋涂组合物的pH，而且还影响作为层状材料，电子部件或半导体的一部分的最终旋涂组合物的化学性能和特性，机械性能和结构组成 使得最终的旋涂组合物与与其偶联的抗蚀剂材料更相容。 更具体地，pH调节剂强烈影响聚合物特性，结构组成和空间取向，导致抗反射涂层的表面性质增加，以获得最佳抗蚀剂性能。 换句话说，仅调节旋涂材料的pH而不影响旋涂组合物或偶联的抗蚀剂材料的机械性能和结构组成的pH调节剂在本文中未考虑。 制备吸收和pH调节旋涂材料的方法包括在合成旋涂材料和组合物期间将至少一种有机吸收化合物和至少一种pH调节剂与至少一种硅烷反应物组合。