公开(公告)号：WO2004044025A2

公开(公告)日：2004-05-27

申请号：PCT/US2003/036354

申请日：2003-11-12

Applicant: HONEYWELL INTERNATIONAL INC ,  BALDWIN, Teresa ,  KENNEDY, Joseph ,  IWAMOTO, Nancy ,  NAKANO, Tadashi ,  BEDWELL, William ,  STUCK, Jason ,  SUEDEMEYER, Arlene ,  HEBERT, Mello ,  LI, Bo

Inventor： BALDWIN, Teresa ,  KENNEDY, Joseph ,  IWAMOTO, Nancy ,  NAKANO, Tadashi ,  BEDWELL, William ,  STUCK, Jason ,  SUEDEMEYER, Arlene ,  HEBERT, Mello ,  LI, Bo

IPC: C08G

CPC classification number: C08G77/14 ,  C08G77/22 ,  C09D183/06 ,  C09D183/08 ,  G03F7/0757 ,  G03F7/091

Abstract: Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compound and at least one material modification agent, such as at least one porogen, at least one high-boiling solvent, at least one densifying agent, at least one capping agent, at least one leveling agent, at least one catalyst, at least one replacement solvent, at least one pH tuning agent, and/or a combination thereof that are incorporated into inorganic-based materials or inorganic compositions and/or compounds. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography.

Abstract translation: 用于紫外光刻的抗反射涂层材料包括至少一种吸收化合物和至少一种材料改性剂，例如至少一种致孔剂，至少一种高沸点溶剂，至少一种致密剂 ，至少一种封端剂，至少一种流平剂，至少一种催化剂，至少一种置换溶剂，至少一种pH调节剂和/或其组合和/或掺入无机基材料或无机组合物和/ 或化合物。 合适的吸收化合物是吸收可用于光刻法的波长例如365nm，248nm，193nm和157nm附近的吸收化合物。

公开(公告)号：WO2004044025A8

公开(公告)日：2004-10-07

申请号：PCT/US0336354

申请日：2003-11-12

Applicant: HONEYWELL INT INC ,  BALDWIN TERESA ,  KENNEDY JOSEPH ,  IWAMOTO NANCY ,  NAKANO TADASHI ,  BEDWELL WILLIAM ,  STUCK JASON ,  SUEDEMEYER ARLENE ,  HEBERT MELLO ,  LI BO

Inventor： BALDWIN TERESA ,  KENNEDY JOSEPH ,  IWAMOTO NANCY ,  NAKANO TADASHI ,  BEDWELL WILLIAM ,  STUCK JASON ,  SUEDEMEYER ARLENE ,  HEBERT MELLO ,  LI BO

IPC: C08G20060101 ,  C08G77/02 ,  C08G77/14 ,  C08G77/18 ,  C08G77/22 ,  C08L83/06 ,  C09D183/06 ,  C09D183/08 ,  G03F7/075 ,  G03F7/09

CPC classification number: C08G77/14 ,  C08G77/22 ,  C09D183/06 ,  C09D183/08 ,  G03F7/0757 ,  G03F7/091

Abstract: Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compound and at least one material modification agent, such as at least one porogen, at least one high-boiling solvent, at least one densifying agent, at least one capping agent, at least one leveling agent, at least one catalyst, at least one replacement solvent, at least one pH tuning agent, and/or a combination thereof that are incorporated into inorganic-based materials or inorganic compositions and/or compounds. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography.

Abstract translation: 用于紫外光刻的抗反射涂层材料包括至少一种吸收化合物和至少一种材料改性剂，例如至少一种致孔剂，至少一种高沸点溶剂，至少一种致密剂，至少一种封端剂， 至少一种流平剂，至少一种催化剂，至少一种置换溶剂，至少一种pH调节剂和/或其组合，其掺入无机基材料或无机组合物和/或化合物中。 合适的吸收化合物是吸收可用于光刻的波长（例如365nm，248nm，193nm和157nm）附近的吸收化合物。

公开(公告)号：WO2004044025A3

公开(公告)日：2004-07-15

申请号：PCT/US0336354

申请日：2003-11-12

Applicant: HONEYWELL INT INC ,  BALDWIN TERESA ,  KENNEDY JOSEPH ,  IWAMOTO NANCY ,  NAKANO TADASHI ,  BEDWELL WILLIAM ,  STUCK JASON ,  SUEDEMEYER ARLENE ,  HEBERT MELLO ,  LI BO

Inventor： BALDWIN TERESA ,  KENNEDY JOSEPH ,  IWAMOTO NANCY ,  NAKANO TADASHI ,  BEDWELL WILLIAM ,  STUCK JASON ,  SUEDEMEYER ARLENE ,  HEBERT MELLO ,  LI BO

IPC: C08G20060101 ,  C08G77/02 ,  C08G77/14 ,  C08G77/18 ,  C08G77/22 ,  C08L83/06 ,  C09D183/06 ,  C09D183/08 ,  G03F7/075 ,  G03F7/09

CPC classification number: C08G77/14 ,  C08G77/22 ,  C09D183/06 ,  C09D183/08 ,  G03F7/0757 ,  G03F7/091

Abstract: Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compound and at least one material modification agent, such as at least one porogen, at least one high-boiling solvent, at least one densifying agent, at least one capping agent, at least one leveling agent, at least one catalyst, at least one replacement solvent, at least one pH tuning agent, and/or a combination thereof that are incorporated into inorganic-based materials or inorganic compositions and/or compounds. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography.

Abstract translation: 用于紫外光刻的抗反射涂层材料包括至少一种吸收化合物和至少一种材料改性剂，例如至少一种致孔剂，至少一种高沸点溶剂，至少一种致密化剂，至少一种封端剂， 至少一种流平剂，至少一种催化剂，至少一种置换溶剂，至少一种pH调节剂，和/或其组合，其掺入无机基材料或无机组合物和/或化合物中。 合适的吸收化合物是可以在光刻中使用的波长如365nm，248nm，193nm和157nm的那些吸收化合物。