METHODS FOR AUTOMATICALLY CHARACTERIZING A PLASMA
    1.
    发明申请
    METHODS FOR AUTOMATICALLY CHARACTERIZING A PLASMA 审中-公开
    自动表征等离子体的方法

    公开(公告)号:WO2009158556A3

    公开(公告)日:2010-04-01

    申请号:PCT/US2009048747

    申请日:2009-06-26

    Abstract: A method for automatically characterizing plasma during substrate processing is provided. The method includes collecting a set of process data, which includes at least data about current and voltage. The method also includes identifying a relevancy range for the set of process data, wherein the relevancy range includes a subset of the set of process data. The method further includes determining a set of seed values. The method yet also includes employing the relevancy range and the set of seed values to perform curve-fitting, wherein the curve-fitting enables the plasma to be automatically characterized.

    Abstract translation: 提供了一种用于在衬底处理期间自动表征等离子体的方法。 该方法包括收集一组过程数据,其至少包括关于电流和电压的数据。 所述方法还包括识别所述一组过程数据的相关范围,其中所述相关范围包括所述一组过程数据的子集。 该方法还包括确定一组种子值。 该方法还包括采用相关范围和种子值集合进行曲线拟合,其中曲线拟合使等离子体能够被自动表征。

    CAPACITIVELY-COUPLED ELECTROSTATIC (CCE) PROBE ARRANGEMENT FOR DETECTING DECHUCKING IN A PLASMA PROCESSING CHAMBER AND METHODS THEREOF
    2.
    发明申请
    CAPACITIVELY-COUPLED ELECTROSTATIC (CCE) PROBE ARRANGEMENT FOR DETECTING DECHUCKING IN A PLASMA PROCESSING CHAMBER AND METHODS THEREOF 审中-公开
    用于检测等离子体加工室中的减缩的电容耦合静电(CCE)探测装置及其方法

    公开(公告)号:WO2010005931A2

    公开(公告)日:2010-01-14

    申请号:PCT/US2009/049759

    申请日:2009-07-07

    CPC classification number: H01L21/6833

    Abstract: A method for identifying a signal perturbation characteristic of a dechucking event within a processing chamber of a plasma processing system is provided. The method includes executing a dechucking step within the processing chamber to remove a substrate from a lower electrode, wherein the dechucking step includes generating plasma capable of providing a current to neutralize an electrostatic charge on the substrate. The method also includes employing a probe head to collect a set of characteristic parameter measurements during the dechucking step. The probe head is on a surface of the processing chamber, wherein the surface is within close proximity to a substrate surface. The method further includes comparing the set of characteristic parameter measurements against a pre-defined range. If the set of characteristic parameter measurements is within the pre-defined range, the electrostatic charge is removed from the substrate and the signal perturbation characteristic of the dechucking event is detected.

    Abstract translation: 提供了一种用于识别等离子体处理系统的处理室内的解除夹紧事件的信号扰动特性的方法。 该方法包括在处理室内执行解除夹紧步骤以从下部电极移除衬底,其中解除夹紧步骤包括产生能够提供电流以中和衬底上的静电电荷的等离子体。 该方法还包括在解除夹紧步骤期间使用探头来收集一组特征参数测量结果。 探头位于处理室的表面上,其中该表面紧邻基板表面。 该方法还包括将该组特征参数测量结果与预定范围进行比较。 如果特征参数测量值集合在预定义的范围内,则从衬底去除静电电荷并且检测解除夹紧事件的信号扰动特征。

    PLASMA PROCESSING IN A CAPACITIVELY-COUPLED REACTOR WITH TRAPEZOIDAL-WAVEFORM EXCITATION
    4.
    发明申请
    PLASMA PROCESSING IN A CAPACITIVELY-COUPLED REACTOR WITH TRAPEZOIDAL-WAVEFORM EXCITATION 审中-公开
    电容耦合反应器中等离子体处理与TRAPEZOIDAL-WAVEFORM激发的等离子体处理

    公开(公告)号:WO2012007483A1

    公开(公告)日:2012-01-19

    申请号:PCT/EP2011/061894

    申请日:2011-07-12

    CPC classification number: C23C16/509 H01J37/32091 H01J2237/3348

    Abstract: Plasma processing in a capacitively-coupled reactor with trapezoidal- waveform excitation. The invention concerns a method for exciting at least one electrode of a capacitively coupled reactive plasma reactor containing a substrate. The electrode is excited by applying a RF voltage with a trapezoidal waveform comprising a ramp-up, a high plateau, a ramp-down and a low plateau. The plasma density can be controlled by adjusting the duration of the ramp-up, the duration of the ramp-down, the amplitude and the repetition rate of the trapezoidal waveform. The ion energy distribution function at the substrate can be controlled by adjusting the amplitude and the relative duration between the high plateau and the low plateau of the trapezoidal waveform.

    Abstract translation: 具有梯形波形激励的电容耦合电抗器中的等离子体处理。 本发明涉及一种用于激发包含衬底的电容耦合反应等离子体反应器的至少一个电极的方法。 通过施加具有包括斜坡上升,高平台,斜坡下降和低平台的梯形波形的RF电压来激发电极。 可以通过调整斜坡的持续时间,斜坡下降的持续时间,梯形波形的振幅和重复率来控制等离子体密度。 可以通过调整梯形波形的高平台和低平台之间的幅度和相对持续时间来控制衬底上的离子能量分布函数。

    PLASMA UNCONFINEMENT SENSOR AND METHODS THEREOF
    5.
    发明申请
    PLASMA UNCONFINEMENT SENSOR AND METHODS THEREOF 审中-公开
    等离子体不连续传感器及其方法

    公开(公告)号:WO2009076568A2

    公开(公告)日:2009-06-18

    申请号:PCT/US2008086495

    申请日:2008-12-12

    CPC classification number: H01J37/32935

    Abstract: An arrangement within a plasma reactor for detecting a plasma unconfinement event is provided. The arrangement includes a sensor, which is a capacitive-based sensor implemented within the plasma reactor. The sensor is implemented outside of a plasma confinement region and is configured to produce a transient current when the sensor is exposed to plasma associated with the plasma unconfinement event. The sensor has at least one electrically insulative layer oriented toward the plasma associated with the plasma unconfined event. The arrangement also includes a detection circuit, which is electrically connected to the sensor for converting the transient current into a transient voltage signal and for processing the transient voltage signal to ascertain whether the plasma unconfinement event exists.

    Abstract translation: 提供了用于检测等离子体无约束事件的等离子体反应器内的布置。 该装置包括传感器,其是在等离子体反应器内实现的基于电容的传感器。 传感器在等离子体限制区域外部实现,并且被配置为当传感器暴露于与等离子体无约束事件相关联的等离子体时产生瞬态电流。 传感器具有至少一个朝向与等离子体无约束事件相关联的等离子体的电绝缘层。 该装置还包括检测电路,其与传感器电连接,用于将瞬态电流转换成瞬态电压信号,并用于处理瞬态电压信号以确定是否存在等离子体无约束事件。

    RF-BIASED CAPACITIVELY-COUPLED ELECTROSTATIC (RFB-CCE) PROBE ARRANGEMENT FOR CHARACTERIZING A FILM IN A PLASMA PROCESSING CHAMBER
    6.
    发明申请
    RF-BIASED CAPACITIVELY-COUPLED ELECTROSTATIC (RFB-CCE) PROBE ARRANGEMENT FOR CHARACTERIZING A FILM IN A PLASMA PROCESSING CHAMBER 审中-公开
    用于表征等离子体处理室中的薄膜的RF偏置电容耦合静电(RFB-CCE)探针布置

    公开(公告)号:WO2010005934A3

    公开(公告)日:2010-05-06

    申请号:PCT/US2009049762

    申请日:2009-07-07

    CPC classification number: H01J37/32935 H01L21/67069 H01L22/14 Y10T29/49004

    Abstract: A method for characterizing deposited film on a substrate within a processing chamber during processing is provided. The method includes determining voltage-current characteristic for a probe head when measuring capacitor is set at a first capacitance value. The method also includes applying RF train to the probe head when measuring capacitor is set at a capacitance value greater than first capacitance value. The method further includes providing an initial resistance value and an initial capacitance value for the deposited film. The method yet also includes employing initial resistance value, initial capacitance value, and voltage-current characteristic to generate simulated voltage-time curve. The method yet further includes determining measured voltage-time curve, which represents potential drop across the deposited film for one RF train. The method more over includes comparing the two curves. If the difference is less than predefined threshold, employ initial resistance value and initial capacitance for characterizing the deposited film.

    Abstract translation: 提供了一种在处理期间在处理室内的基板上表征沉积膜的方法。 该方法包括当测量电容器被设置在第一电容值时确定探头的电压 - 电流特性。 该方法还包括当测量电容器被设置为大于第一电容值的电容值时,将RF串施加到探头。 该方法还包括为沉积膜提供初始电阻值和初始电容值。 该方法还包括采用初始电阻值,初始电容值和电压 - 电流特性来产生模拟电压 - 时间曲线。 该方法还包括确定测量的电压时间曲线,其表示用于一个RF火车的沉积膜的电位降。 更多的方法包括比较两条曲线。 如果差值小于预定阈值,则使用初始电阻值和初始电容来表征沉积膜。

    CAPACITIVELY-COUPLED ELECTROSTATIC (CCE) PROBE ARRANGEMENT FOR DETECTING DECHUCKING IN A PLASMA PROCESSING CHAMBER AND METHODS THEREOF
    7.
    发明申请
    CAPACITIVELY-COUPLED ELECTROSTATIC (CCE) PROBE ARRANGEMENT FOR DETECTING DECHUCKING IN A PLASMA PROCESSING CHAMBER AND METHODS THEREOF 审中-公开
    用于检测等离子体加工室中的检测的电容耦合静电(CCE)检测装置及其方法

    公开(公告)号:WO2010005931A3

    公开(公告)日:2010-03-25

    申请号:PCT/US2009049759

    申请日:2009-07-07

    CPC classification number: H01L21/6833

    Abstract: A method for identifying a signal perturbation characteristic of a dechucking event within a processing chamber of a plasma processing system is provided. The method includes executing a dechucking step within the processing chamber to remove a substrate from a lower electrode, wherein the dechucking step includes generating plasma capable of providing a current to neutralize an electrostatic charge on the substrate. The method also includes employing a probe head to collect a set of characteristic parameter measurements during the dechucking step. The probe head is on a surface of the processing chamber, wherein the surface is within close proximity to a substrate surface. The method further includes comparing the set of characteristic parameter measurements against a pre-defined range. If the set of characteristic parameter measurements is within the pre-defined range, the electrostatic charge is removed from the substrate and the signal perturbation characteristic of the dechucking event is detected.

    Abstract translation: 提供了一种用于识别等离子体处理系统的处理室内的消磁事件的信号扰动特性的方法。 该方法包括执行处理室内的脱扣步骤以从下电极去除衬底,其中所述去开关步骤包括产生能够提供电流以中和衬底上的静电电荷的等离子体。 该方法还包括使用探针头在脱胶步骤期间收集一组特征参数测量。 探头位于处理室的表面上,其中表面在基板表面附近。 该方法还包括将特征参数测量集合与预定义范围进行比较。 如果特征参数测量集合在预定范围内,则从衬底去除静电电荷,并且检测到脱扣事件的信号扰动特性。

    PLASMA-FACING PROBE ARRANGEMENT INCLUDING VACUUM GAP FOR USE IN A PLASMA PROCESSING CHAMBER

    公开(公告)号:WO2010005932A3

    公开(公告)日:2010-01-14

    申请号:PCT/US2009/049760

    申请日:2009-07-07

    Abstract: An arrangement for measuring process parameters within a processing chamber is provided. The arrangement includes a probe arrangement disposed in an opening of an upper electrode. Probe arrangement includes a probe head, which includes a head portion and a flange portion. The arrangement also includes an o-ring disposed between the upper electrode and the flange portion. The arrangement further includes a spacer made of an electrically insulative material positioned between the head portion and the opening of the upper electrode to prevent the probe arrangement from touching the upper electrode. The spacer includes a disk portion configured for supporting an underside of the flange portion. The spacer also includes a hollow cylindrical portion configured to encircle the head portion. The spacer forms a right-angled path between the o-ring and an opening to the processing chamber to prevent direct line-of-sight path between the o-ring and the opening to the processing chamber.

    PASSIVE CAPACITIVELY-COUPLED ELECTROSTATIC (CCE) PROBE ARRANGEMENT FOR DETECTING IN-SITU ARCING EVENTS IN A PLASMA PROCESSING CHAMBER
    9.
    发明申请
    PASSIVE CAPACITIVELY-COUPLED ELECTROSTATIC (CCE) PROBE ARRANGEMENT FOR DETECTING IN-SITU ARCING EVENTS IN A PLASMA PROCESSING CHAMBER 审中-公开
    用于检测等离子体处理室中的现场ARCING事件的被动电容耦合静电(CCE)探测器布置

    公开(公告)号:WO2010005929A2

    公开(公告)日:2010-01-14

    申请号:PCT/US2009/049756

    申请日:2009-07-07

    Abstract: An arrangement for detecting in-situ arcing events within a processing chamber of a plasma processing system during substrate processing is provided. The arrangement includes a probe arrangement, which is disposed on a surface of the processing chamber and is configured to measure at least one plasma processing parameter. The probe arrangement includes a plasma-facing sensor and a measuring capacitor, wherein the plasma-facing sensor is coupled to a first plate of the measuring capacitor. The probe arrangement also includes a detection arrangement that is coupled to a second plate of the measuring capacitor, wherein the detection arrangement is configured for converting an induced current flowing through the measuring capacitor into a set of digital signals, which is processed to detect the in-situ arcing events.

    Abstract translation: 提供了一种用于在衬底处理期间检测等离子体处理系统的处理室内的原位电弧事件的装置。 该装置包括探针装置,其布置在处理室的表面上并被配置成测量至少一个等离子体处理参数。 探针装置包括等离子体面向传感器和测量电容器,其中等离子体面向传感器耦合到测量电容器的第一板。 探针装置还包括耦合到测量电容器的第二板的检测装置,其中检测装置被配置为将流过测量电容器的感应电流转换成一组数字信号,该组数字信号被处理以检测在 电击事件。

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