公开(公告)号：WO2010093871A3

公开(公告)日：2010-11-04

申请号：PCT/US2010024025

申请日：2010-02-12

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  BUFF JAMES S ,  RADOVANOV SVETLANA ,  KOO JOHN BON WOONG ,  PLATOW WILHELM P ,  SINCLAIR FRANK ,  LISCHER D JEFFREY ,  CHANEY CRAIG R ,  BORICHEVSKY STEVEN C ,  JAGTAP MAYUR ,  COBB ERIC R ,  PURSER KENNETH H ,  PATEL SHARDUL ,  BENVENISTE VICTOR M

Inventor： BUFF JAMES S ,  RADOVANOV SVETLANA ,  KOO JOHN BON WOONG ,  PLATOW WILHELM P ,  SINCLAIR FRANK ,  LISCHER D JEFFREY ,  CHANEY CRAIG R ,  BORICHEVSKY STEVEN C ,  JAGTAP MAYUR ,  COBB ERIC R ,  PURSER KENNETH H ,  PATEL SHARDUL ,  BENVENISTE VICTOR M

IPC: H01L21/265

CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/08 ,  H01J37/09 ,  H01J37/304 ,  H01J2237/0453 ,  H01J2237/0458 ,  H01J2237/083 ,  H01J2237/24542

Abstract: Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.

Abstract translation: 公开了使用高透明度电极改善提取离子束质量的技术。 在一个特定的示例性实施例中，可以将这些技术实现为用于离子注入的装置。 该装置可以包括用于产生离子束的离子源，其中该离子源包括具有用于离子束穿过其中的孔的面板。 该设备还可以包括一组提取电极，该组提取电极至少包括抑制电极和高透明度接地电极，其中该组提取电极可以经由面板从离子源提取离子束，并且其中高透明度的接地 电极可以被配置为优化抑制电极和高透明度接地电极之间的气体电导以改善提取的离子束质量。

公开(公告)号：WO2010093871A2

公开(公告)日：2010-08-19

申请号：PCT/US2010/024025

申请日：2010-02-12

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES ,  BUFF, James, S. ,  RADOVANOV, Svetlana ,  KOO, John (Bon Woong) ,  PLATOW, Wilhelm, P. ,  SINCLAIR, Frank ,  LISCHER, D., Jeffrey ,  CHANEY, Craig, R. ,  BORICHEVSKY, Steven, C. ,  JAGTAP, Mayur ,  COBB, Eric, R. ,  PURSER, Kenneth, H. ,  PATEL, Shardul ,  BENVENISTE, Victor, M.

Inventor： BUFF, James, S. ,  RADOVANOV, Svetlana ,  KOO, John (Bon Woong) ,  PLATOW, Wilhelm, P. ,  SINCLAIR, Frank ,  LISCHER, D., Jeffrey ,  CHANEY, Craig, R. ,  BORICHEVSKY, Steven, C. ,  JAGTAP, Mayur ,  COBB, Eric, R. ,  PURSER, Kenneth, H. ,  PATEL, Shardul ,  BENVENISTE, Victor, M.

IPC: H01L21/265

CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/08 ,  H01J37/09 ,  H01J37/304 ,  H01J2237/0453 ,  H01J2237/0458 ,  H01J2237/083 ,  H01J2237/24542

Abstract: Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.

Abstract translation: 公开了使用高透明电极提高离子束质量的技术。 在一个特定的示例性实施例中，技术可以被实现为用于离子注入的装置。 该装置可以包括用于产生离子束的离子源，其中离子源包括具有离子束穿过其中的孔的面板。 该装置还可以包括至少包括抑制电极和高透明度接地电极的一组提取电极，其中所述提取电极组可以经由面板从离子源提取离子束，并且其中高透明度接地 电极可以被配置为优化抑制电极和高透明度接地电极之间的气体传导，以改善提取的离子束质量。

公开(公告)号：WO2012091830A1

公开(公告)日：2012-07-05

申请号：PCT/US2011/062238

申请日：2011-11-28

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. ,  BORICHEVSKY, Steven C.

Inventor： BORICHEVSKY, Steven C.

IPC: F16K3/20

CPC classification number: F16K3/20 ,  F16K3/207 ,  Y10T29/49826

Abstract: A valve assembly (200) disposed within a vacuum environment which is configured to protect the sealing surfaces thereof to prolong life of the valve assembly. The valve assembly includes a sealing piston (201b) and a flange portion (201a) that define a passage therethrough. The sealing piston is movable toward and away from the flange portion to define a chamber (210). When the valve assembly is in an open position, a valve seal (205) attached to the sealing piston engages a surface of the flange portion. When the valve assembly is to be closed, the sealing piston is displaced away from the flange portion which disengages the valve seal from the surface of the flange and a gate (203) is disposed within the space defined between the sealing piston and the flange portion. The gate includes a gate seal which engages the surface of the flange portion when the gate is disposed within the chamber.

Abstract translation: 设置在真空环境内的阀组件（200），其构造成保护其密封表面以延长阀组件的寿命。 阀组件包括密封活塞（201b）和限定穿过其中的通道的凸缘部分（201a）。 密封活塞可朝向和远离凸缘部分移动以限定腔室（210）。 当阀组件处于打开位置时，附接到密封活塞的阀密封件（205）接合凸缘部分的表面。 当阀门组件要关闭时，密封活塞远离凸缘部分，该凸缘部分将阀密封件与凸缘表面分离，并且闸门（203）设置在限定在密封活塞和凸缘部分之间的空间内 。 当门设置在室内时，门包括接合凸缘部分的表面的门密封件。