公开(公告)号：WO2006130319A3

公开(公告)日：2009-04-16

申请号：PCT/US2006018142

申请日：2006-05-10

Applicant: LAM RES CORP ,  LEE SANGHEON ,  CHOI DAE-HAN ,  KIM JISOO ,  CIRIGLIANO PETER ,  HUANG ZHISONG ,  CHARATAN ROBERT ,  SADJADI S M REZA

Inventor： LEE SANGHEON ,  CHOI DAE-HAN ,  KIM JISOO ,  CIRIGLIANO PETER ,  HUANG ZHISONG ,  CHARATAN ROBERT ,  SADJADI S M REZA

IPC: H01L21/302

CPC classification number: C23F4/00 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76816 ,  Y10S438/947

Abstract: A method for forming a feature (324) in an etch layer (308, 310) is provided. A photoresist layer (312) is formed over the etch layer (308, 310). The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer (318) is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer (320) is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions (324) of the photoresist features. Openings in the control layer (318) are opened with a control layer breakthrough chemistry. Fedures are etched into the etch layer (308, 310) with an etch chemistry, which is different from the control layer (318) break through chemistry, wherein the control layer (318) is more etch resistant to the etch with the etch chemistry than the conformal layer (320).

Abstract translation: 提供了一种在蚀刻层（308,310）中形成特征（324）的方法。 在蚀刻层（308,310）上形成光致抗蚀剂层（312）。 图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。 在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层（318）。 在光致抗蚀剂特征和控制层的侧壁上沉积共形层（320），以减小光刻胶特征的临界尺寸（324）。 控制层（318）中的开口以控制层突破性化学物质打开。 用蚀刻化学物质将蚀刻蚀刻到蚀刻层（308,310）中，蚀刻化学物质不同于控制层（318）突破化学，其中控制层（318）对蚀刻化学腐蚀更耐腐蚀， 共形层（320）。

公开(公告)号：WO2006020344A1

公开(公告)日：2006-02-23

申请号：PCT/US2005/025982

申请日：2005-07-20

Applicant: LAM RESEARCH CORPORATION ,  HUDSON, Eric, A. ,  CIRIGLIANO, Peter

Inventor： HUDSON, Eric, A. ,  CIRIGLIANO, Peter

IPC: H01L21/311

CPC classification number: G03F7/427 ,  H01L21/31138

Abstract: A method of forming a feature in a low-k (k 2 is provided. A plasma is formed from the stripping gas comprising CO 2 . The plasma from the stripping gas comprising CO 2 is used to strip the patterned photoresist mask.

Abstract translation: 提供了在低k（k <3.0）电介质层中形成特征的方法。 将低k电介质层放置在衬底上。 将图案化的光致抗蚀剂掩模放置在低k电介质层上。 至少一个特征被蚀刻到低k电介质层中。 包含CO的汽提气体

公开(公告)号：WO2010033434A2

公开(公告)日：2010-03-25

申请号：PCT/US2009/056716

申请日：2009-09-11

Applicant: LAM RESEARCH CORPORATION ,  CIRIGLIANO, Peter ,  ZHU, Helen ,  KIM, Ji Soo ,  SADJADI, S.M. Reza

Inventor： CIRIGLIANO, Peter ,  ZHU, Helen ,  KIM, Ji Soo ,  SADJADI, S.M. Reza

IPC: H01L21/3065

CPC classification number: H01L21/0337 ,  H01L21/31144 ,  H01L21/312

Abstract: An etch layer underlying a patterned photoresist mask is provided. A plurality of sidewall forming processes are performed. Each sidewall forming process comprises depositing a protective layer on the patterned photoresist mask by performing multiple cyclical depositions. Each cyclical deposition involves at least a depositing phase for depositing a deposition layer over surfaces of the patterned photoresist mask and a profile shaping phase for shaping vertical surfaces in the deposition layer. Each sidewall forming process further comprises a breakthrough etch for selectively etching horizontal surfaces of the protective layer with respect to vertical surfaces of the protective layer. Afterwards, the etch layer is etched to form a feature having a critical dimension that is less than the critical dimension of the features in the patterned photoresist mask.

Abstract translation: 提供在图案化的光刻胶掩模下面的蚀刻层。 执行多个侧壁形成过程。 每个侧壁形成过程包括通过执行多次循环沉积而在图案化的光刻胶掩模上沉积保护层。 每个循环沉积至少包括用于在图案化的光刻胶掩模的表面上沉积沉积层的沉积阶段和用于在沉积层中成形垂直表面的轮廓成形阶段。 每个侧壁形成工艺还包括用于选择性地蚀刻保护层相对于保护层的垂直表面的水平表面的突破蚀刻。 之后，蚀刻蚀刻层以形成具有小于图案化光刻胶掩模中的特征的临界尺寸的临界尺寸的特征。

公开(公告)号：WO2006130319A2

公开(公告)日：2006-12-07

申请号：PCT/US2006/018142

申请日：2006-05-10

Applicant: LAM RESEARCH CORPORATION ,  LEE, Sangheon ,  CHOI, Dae-Han ,  KIM, Jisoo ,  CIRIGLIANO, Peter ,  HUANG, Zhisong ,  CHARATAN, Robert ,  SADJADI, S.M., Reza

Inventor： LEE, Sangheon ,  CHOI, Dae-Han ,  KIM, Jisoo ,  CIRIGLIANO, Peter ,  HUANG, Zhisong ,  CHARATAN, Robert ,  SADJADI, S.M., Reza

CPC classification number: C23F4/00 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76816 ,  Y10S438/947

Abstract: A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.

Abstract translation: 提供了一种在蚀刻层中形成特征的方法。 在蚀刻层上形成光致抗蚀剂层。 图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。 在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层。 在光致抗蚀剂特征和控制层的侧壁上沉积保形层以减少光刻胶特征的临界尺寸。 控制层的开口打开，控制层突破性化学。 特征被刻蚀到蚀刻层中，其蚀刻化学性质不同于控制层突破性化学，其中控制层比蚀刻化学性质比保形层蚀刻更耐腐蚀。

公开(公告)号：WO2006081233A2

公开(公告)日：2006-08-03

申请号：PCT/US2006/002459

申请日：2006-01-24

Applicant: LAM RESEARCH CORPORATION ,  CIRIGLIANO, Peter

Inventor： CIRIGLIANO, Peter

IPC: C23C16/00 ,  C23F1/00

CPC classification number: C23F4/00 ,  H01J37/32623 ,  H01L21/67069 ,  Y10S156/915

Abstract: A confinement assembly for a semiconductor processing chamber is provided. The confinement assembly includes a plurality of confinement rings disposed over each other. Each of the plurality of confinement rings are separated by a space and each of the plurality of confinement rings have a plurality of holes defined therein. A plunger extending through aligned holes of corresponding confinement rings is provided. The plunger is moveable in a plane substantially orthogonal to the confinement rings. A proportional adjustment support is affixed to the plunger. The proportional adjustment support is configured to support the confinement rings, such that as the plunger moves in the plane, the space separating each of the plurality of confinement rings is proportionally adjusted, hi one embodiment the proportional adjustment support is a bellows sleeve. A semiconductor processing chamber and a method for confining a plasma in an etch chamber having a plurality of confinement rings are provided.

Abstract translation: 提供了一种用于半导体处理室的限制组件。 限制组件包括彼此设置的多个限制环。 多个限制环中的每一个由空间分开，并且多个限制环中的每一个具有限定在其中的多个孔。 提供了延伸穿过对应的限制环的对准孔的柱塞。 柱塞可在基本上垂直于限制环的平面内移动。 柱塞附加比例调节支架。 比例调节支撑件构造成支撑约束环，使得当柱塞在平面中移动时，分离多个限制环中的每一个的空间成比例地调节。在一个实施例中，比例调节支撑件是波纹管套筒。 提供半导体处理室和用于将等离子体限制在具有多个限制环的蚀刻室中的方法。

公开(公告)号：WO2005122226A1

公开(公告)日：2005-12-22

申请号：PCT/US2005/018784

申请日：2005-05-27

Applicant: LAM RESEARCH CORPORATION ,  YUN, Seokmin ,  ZHU, Ji ,  CIRIGLIANO, Peter ,  LEE, Sangheon ,  CHOI, Thomas, S. ,  LOEWENHARDT, Peter ,  WILCOXSON, Mark, H. ,  SADJADI, Reza ,  HUDSON, Eric, A. ,  TIETZ, James, V.

Inventor： YUN, Seokmin ,  ZHU, Ji ,  CIRIGLIANO, Peter ,  LEE, Sangheon ,  CHOI, Thomas, S. ,  LOEWENHARDT, Peter ,  WILCOXSON, Mark, H. ,  SADJADI, Reza ,  HUDSON, Eric, A. ,  TIETZ, James, V.

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01L21/31138 ,  H01L21/76802 ,  H01L21/76829

Abstract: A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase uses first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The stripping phase for stripping the photoresist mask uses a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.

Abstract translation: 一种通过光刻胶蚀刻掩模在衬底上蚀刻低k电介质层中的特征的方法。 执行气体调制的循环剥离工艺超过三个循环以剥离单个光致抗蚀剂掩模。 气体调节循环汽提过程的每个循环包括进行保护层形成阶段和汽提阶段。 保护层形成阶段使用具有沉积气体化学性质的第一气体化学，其中对于每个循环，保护层形成阶段在约0.005至10秒内进行。 用于剥离光致抗蚀剂掩模的剥离阶段使用第二气体化学品，其使用剥离气体化学，其中第一气体化学物质不同于第二气体化学物质，其中蚀刻阶段在每个循环的约0.005至10秒内进行。

公开(公告)号：WO2006096528A3

公开(公告)日：2006-09-14

申请号：PCT/US2006/007643

申请日：2006-03-02

Applicant: LAM RESEARCH CORPORATION ,  SADJADI, S. M. Reza ,  HUDSON, Eric, A. ,  CIRIGLIANO, Peter ,  KIM, Ji Soo ,  HUANG, Zhisong

Inventor： SADJADI, S. M. Reza ,  HUDSON, Eric, A. ,  CIRIGLIANO, Peter ,  KIM, Ji Soo ,  HUANG, Zhisong

IPC: H01L21/027 ,  G03F7/40

Abstract: A method for forming features in an etch layer is provided. A first mask is formed over the etch layer where the first mask defines a plurality of spaces with widths. The first mask is laterally etched where the etched first mask defines a plurality of spaces with widths that are greater than the widths of the spaces of the first mask. A sidewall layer is formed over the etched first mask where the sidewall layer defines a plurality of spaces with widths that are less than the widths of the spaces defined by the etched first mask. Features are etched into the etch layer through the sidewall layer, where the features have widths that are smaller than the widths of the spaces defined by the etched first mask. The mask and sidewall layer are removed.

公开(公告)号：WO2006081233A3

公开(公告)日：2009-04-16

申请号：PCT/US2006002459

申请日：2006-01-24

Applicant: LAM RES CORP ,  CIRIGLIANO PETER

Inventor： CIRIGLIANO PETER

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: C23F4/00 ,  H01J37/32623 ,  H01L21/67069 ,  Y10S156/915

Abstract: A confinement assembly for a semiconductor processing chamber is provided. The confinement assembly includes a plurality of confinement rings disposed over each other. Each of the plurality of confinement rings are separated by a space and each of the plurality of confinement rings have a plurality of holes defined therein. A plunger extending through aligned holes of corresponding confinement rings is provided. The plunger is moveable in a plane substantially orthogonal to the confinement rings. A proportional adjustment support is affixed to the plunger. The proportional adjustment support is configured to support the confinement rings, such that as the plunger moves in the plane, the space separating each of the plurality of confinement rings is proportionally adjusted, hi one embodiment the proportional adjustment support is a bellows sleeve. A semiconductor processing chamber and a method for confining a plasma in an etch chamber having a plurality of confinement rings are provided.

Abstract translation: 提供了一种用于半导体处理室的限制组件。 限制组件包括彼此设置的多个限制环。 多个限制环中的每一个由空间分开，并且多个限制环中的每一个具有限定在其中的多个孔。 提供了延伸穿过相应限制环的对准孔的柱塞。 柱塞可在基本上垂直于限制环的平面内移动。 柱塞附加比例调节支架。 比例调节支撑件构造成支撑限制环，使得当柱塞在平面中移动时，分离每个多个限制环的空间成比例地调整。在一个实施例中，比例调节支撑件是波纹管套筒。 提供半导体处理室和用于将等离子体限制在具有多个限制环的蚀刻室中的方法。

公开(公告)号：WO2007094957A1

公开(公告)日：2007-08-23

申请号：PCT/US2007/002511

申请日：2007-01-30

Applicant: LAM RESEARCH CORPORATION ,  KIM, Ji Soo ,  CIRIGLIANO, Peter ,  LEE, Sangheon ,  HEO, Dongho ,  CHOI, Daehan ,  SADJADI, S.M. Reza

Inventor： KIM, Ji Soo ,  CIRIGLIANO, Peter ,  LEE, Sangheon ,  HEO, Dongho ,  CHOI, Daehan ,  SADJADI, S.M. Reza

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01L21/30655

Abstract: A method for etching features into an etch layer disposed below a photoresist mask without an intermediate hardmask is provided. A plurality of etch cycles are provided. Each etch cycle comprises providing a deposition etch phase that etches features into the etch layer and deposits polymer on sidewalls of the features and over the photoresist and providing a cleaning phase that removes polymer deposited on the sidewalls.

Abstract translation: 提供了一种用于将特征蚀刻到设置在不具有中间硬掩模的光致抗蚀剂掩模下方的蚀刻层中的方法。 提供多个蚀刻循环。 每个蚀刻循环包括提供沉积蚀刻阶段，其将特征蚀刻到蚀刻层中并将聚合物沉积在特征的侧壁上并在光致抗蚀剂上方，并提供去除沉积在侧壁上的聚合物的清洁相。

公开(公告)号：WO2007041423A1

公开(公告)日：2007-04-12

申请号：PCT/US2006038299

申请日：2006-09-29

Applicant: LAM RES CORP ,  SADJADI S M REZA ,  CIRIGLIANO PETER ,  KIM JI SOO ,  HUANG ZHISONG ,  HUDSON ERIC A

Inventor： SADJADI S M REZA ,  CIRIGLIANO PETER ,  KIM JI SOO ,  HUANG ZHISONG ,  HUDSON ERIC A

IPC: H01L21/311 ,  G03F7/40 ,  H01L21/027

CPC classification number: H01L21/0273 ,  H01L21/31144

Abstract: A method for etching features in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have irregular profiles along depths of the photoresist features. The irregular profiles along the depths of the photoresist features of the sidewalls of the photoresist features are corrected comprising at least one cycle, where each cycle comprises a sidewall deposition phase and a profile shaping phase. Feature is etched into the etch layer through the photoresist features. The mask is removed.

Abstract translation: 提供了一种用于蚀刻蚀刻层中的特征的方法。 在具有侧壁的光致抗蚀剂特征的蚀刻层上形成图案化的光致抗蚀剂掩模，其中光致抗蚀剂特征的侧壁沿光致抗蚀剂特征的深度具有不规则的轮廓。 沿光致抗蚀剂特征的侧壁的光致抗蚀剂特征的深度的不规则轮廓被校正包括至少一个循环，其中每个循环包括侧壁沉积阶段和轮廓成形阶段。 通过光致抗蚀剂特征将特征蚀刻到蚀刻层中。 去除面具。