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    ETCH FEATURES WITH REDUCED LINE EDGE ROUGHNESS
    2.
    发明申请
    ETCH FEATURES WITH REDUCED LINE EDGE ROUGHNESS 审中-公开
    具有减少线边缘粗糙度的特征

    公开(公告)号：WO2007021540A2

    公开(公告)日：2007-02-22

    申请号：PCT/US2006/030028

    申请日：2006-08-01

    Applicant: LAM RESEARCH CORPORATION ,  SADJADI, S., M., Reza ,  HUDSON, Eric, A.

    Inventor： SADJADI, S., M., Reza ,  HUDSON, Eric, A.

    CPC classification number: G03F7/40 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/31144

    Abstract: A method for forming a feature in a layer with reduced line edge roughening is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A sidewall layer with a thickness less than 100 nm is formed over the sidewalls of the photoresist features by performing for a plurality of cycles. Each cycle comprises depositing a layer on the photoresist layer wherein the deposited layer has a thickness between a monolayer to 20 nm. Features are etched into the layer through the photoresist features. The photoresist layer and sidewall layer are stripped.

    Abstract translation: 提供了一种在具有减少的线边缘粗糙度的层中形成特征的方法。 在该层上形成光致抗蚀剂层。 图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。 通过执行多个循环，在光致抗蚀剂特征的侧壁上形成厚度小于100nm的侧壁层。 每个循环包括在光致抗蚀剂层上沉积一层，其中沉积层具有单层至20nm之间的厚度。 通过光致抗蚀剂特征将特征蚀刻到该层中。 剥离光致抗蚀剂层和侧壁层。

    ETCH PROFILE CONTROL
    3.
    发明申请
    ETCH PROFILE CONTROL 审中-公开
    ETCH简档控制

    公开(公告)号：WO2006107495A1

    公开(公告)日：2006-10-12

    申请号：PCT/US2006/008302

    申请日：2006-03-07

    Applicant: LAM RESEARCH CORPORATION ,  RUSU, Camelia ,  HUANG, Zhisong ,  SRINIVASAN, Mukund ,  HUDSON, Eric, A. ,  EPPLER, Aaron

    Inventor： RUSU, Camelia ,  HUANG, Zhisong ,  SRINIVASAN, Mukund ,  HUDSON, Eric, A. ,  EPPLER, Aaron

    IPC: H01L21/311

    CPC classification number: H01L21/31116

    Abstract: A method for etching a dielectric layer over a substrate and disposed below a mask is provided. The substrate is placed in a plasma processing chamber. An etchant gas comprising O2 and a sulfur component gas comprising at least one of H2S and a compound containing at least one carbon sulfur bond is provided into the plasma chamber. A plasma is formed from the etchant gas. Features are etched into the etch layer through the photoresist mask with the plasma from the etchant gas.

    Abstract translation: 提供了一种用于在衬底上蚀刻介质层并且设置在掩模下方的方法。 将基板放置在等离子体处理室中。 包含O 2和包含至少一种H2S的硫成分气体的蚀刻剂气体和含有至少一个碳硫键的化合物被提供到等离子体室中。 等离子体由蚀刻剂气体形成。 通过来自蚀刻剂气体的等离子体通过光致抗蚀剂掩模将特征蚀刻到蚀刻层中。

    REDUCTION OF FEATURE CRITICAL DIMENSIONS
    4.
    发明申请
    REDUCTION OF FEATURE CRITICAL DIMENSIONS 审中-公开
    减少特征关键尺寸

    公开(公告)号：WO2005024904A3

    公开(公告)日：2006-06-15

    申请号：PCT/US2004024853

    申请日：2004-07-29

    Applicant: LAM RES CORP ,  KANG SEAN S ,  LEE SANGHEON ,  CHEN WAN-LIN ,  HUDSON ERIC A ,  SADJADI S M REZA ,  ZHAO GAN MING

    Inventor： KANG SEAN S ,  LEE SANGHEON ,  CHEN WAN-LIN ,  HUDSON ERIC A ,  SADJADI S M REZA ,  ZHAO GAN MING

    IPC: H01L21/44 ,  H01L21/033 ,  H01L21/311 ,  H01L21/768

    CPC classification number: H01L21/76802 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76816

    Abstract: A feature in a layer (308) is provided. A photoresist layer is formed over the layer (308). The photoresist layer is patterned to form photoresist features (312) with photoresist sidewalls, where the photoresist features (312) have a first critical dimension (316). A conformal layer (320) is deposited over the sidewalls of the photoresist features (312) to reduce the critical dimensions of the photoresist features (312). Features are etched into the layer (308), wherein the layer (308) features have a second critical dimension (324), which is less than the first critical dimension (316).

    Abstract translation: 提供层（308）中的特征。 在层（308）之上形成光致抗蚀剂层。 光致抗蚀剂层被图案化以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征（312），其中光致抗蚀剂特征（312）具有第一临界尺寸（316）。 在光致抗蚀剂特征（312）的侧壁上沉积保形层（320），以减少光致抗蚀剂特征（312）的临界尺寸。 特征被蚀刻到层（308）中，其中层（308）特征具有小于第一临界尺寸（316）的第二临界尺寸（324）。

    STABILIZED PHOTORESIST STRUCTURE FOR ETCHING PROCESS
    8.
    发明申请
    STABILIZED PHOTORESIST STRUCTURE FOR ETCHING PROCESS 审中-公开
    用于蚀刻过程的稳定的光电子结构

    公开(公告)号：WO2006096528A2

    公开(公告)日：2006-09-14

    申请号：PCT/US2006007643

    申请日：2006-03-02

    Applicant: LAM RES CORP ,  SADJADI S M REZA ,  HUDSON ERIC A ,  CIRIGLIANO PETER ,  KIM JI SOO ,  HUANG ZHISONG

    Inventor： SADJADI S M REZA ,  HUDSON ERIC A ,  CIRIGLIANO PETER ,  KIM JI SOO ,  HUANG ZHISONG

    IPC: H01L21/027 ,  G03F7/40

    CPC classification number: H01L21/0273 ,  H01L21/0274 ,  H01L21/31144 ,  H01L21/76802 ,  Y10S438/942 ,  Y10S438/949

    Abstract: A method for forming features in an etch layer is provided. A first mask is formed over the etch layer where the first mask defines a plurality of spaces with widths. The first mask is laterally etched where the etched first mask defines a plurality of spaces with widths that are greater than the widths of the spaces of the first mask. A sidewall layer is formed over the etched first mask where the sidewall layer defines a plurality of spaces with widths that are less than the widths of the spaces defined by the etched first mask. Features are etched into the etch layer through the sidewall layer, where the features have widths that are smaller than the widths of the spaces defined by the etched first mask. The mask and sidewall layer are removed.

    Abstract translation: 提供了一种在蚀刻层中形成特征的方法。 在蚀刻层上形成第一掩模，其中第一掩模限定具有宽度的多个空间。 第一掩模被横向蚀刻，其中蚀刻的第一掩模限定宽度大于第一掩模的空间的宽度的多个空间。 在蚀刻的第一掩模上形成侧壁层，其中侧壁层限定宽度小于由蚀刻的第一掩模限定的空间的宽度的多个空间。 特征通过侧壁蚀刻到蚀刻层中，其中特征具有小于由蚀刻的第一掩模限定的空间的宽度的宽度。 去除掩模和侧壁层。

    METHOD FOR STRIPPING PHOTORESIST FROM ETCHED WAFER
    9.
    发明申请
    METHOD FOR STRIPPING PHOTORESIST FROM ETCHED WAFER 审中-公开
    从蚀刻波长剥离光刻胶的方法

    公开(公告)号：WO2006020344A1

    公开(公告)日：2006-02-23

    申请号：PCT/US2005/025982

    申请日：2005-07-20

    Applicant: LAM RESEARCH CORPORATION ,  HUDSON, Eric, A. ,  CIRIGLIANO, Peter

    Inventor： HUDSON, Eric, A. ,  CIRIGLIANO, Peter

    IPC: H01L21/311

    CPC classification number: G03F7/427 ,  H01L21/31138

    Abstract: A method of forming a feature in a low-k (k 2 is provided. A plasma is formed from the stripping gas comprising CO 2 . The plasma from the stripping gas comprising CO 2 is used to strip the patterned photoresist mask.

    Abstract translation: 提供了在低k（k <3.0）电介质层中形成特征的方法。 将低k电介质层放置在衬底上。 将图案化的光致抗蚀剂掩模放置在低k电介质层上。 至少一个特征被蚀刻到低k电介质层中。 包含CO的汽提气体

    HIGH ASPECT RATIO ETCH USING MODULATION OF RF POWERS OF VARIOUS FREQUENCIES
    10.
    发明申请
    HIGH ASPECT RATIO ETCH USING MODULATION OF RF POWERS OF VARIOUS FREQUENCIES 审中-公开
    使用各种频率的RF功率的调制的高比例比较

    公开(公告)号：WO2005022623B1

    公开(公告)日：2005-05-26

    申请号：PCT/US2004025406

    申请日：2004-08-06

    Applicant: LAM RES CORP ,  RUSU CAMELIA ,  DHINDSA RAJINDER ,  HUDSON ERIC A ,  SRINIVASAN MUKUND ,  LI LUMIN ,  KOZAKEVICH FELIX

    Inventor： RUSU CAMELIA ,  DHINDSA RAJINDER ,  HUDSON ERIC A ,  SRINIVASAN MUKUND ,  LI LUMIN ,  KOZAKEVICH FELIX

    IPC: B23B3/10 ,  H01J37/32 ,  H01L21/311 ,  H01L21/467 ,  H05H1/46

    CPC classification number: H01J37/32165 ,  H01J37/32082 ,  H01J37/32155 ,  H01J2237/3347 ,  H01L21/31116 ,  H01L21/67063 ,  H01L21/67069

    Abstract: A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed (404) in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided (408) to the process chamber. A first etch step is provided (412) where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided (416), where the first frequency, the second frequency, and the third frequency are at a different power setting. Optionally, a third etch step may also be provided (420).

    Abstract translation: 提供了一种通过掩模将高宽比特征蚀刻到衬底上待蚀刻的层中的方法。 衬底被放置在处理室中，处理室能够提供第一频率的RF功率，不同于第一频率的第二频率以及不同于第一和第二频率的第三频率。 向处理室提供蚀刻剂气体（408）。 提供第一蚀刻步骤（412），其中第一频率，第二频率和第三频率处于第一蚀刻步骤的功率设置。 提供第二蚀刻步骤（416），其中第一频率，第二频率和第三频率处于不同的功率设置。 可选地，还可以提供第三蚀刻步骤（420）。

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