公开(公告)号：WO2011092659A1

公开(公告)日：2011-08-04

申请号：PCT/IB2011/050392

申请日：2011-01-28

Applicant: MEMC SINGAPORE PTE, LTD. ,  PHILLIPS, Richard J. ,  DEVULAPALLI, Balaji ,  KIMBEL, Steven L. ,  DESHPANDE, Aditya J.

Inventor： PHILLIPS, Richard J. ,  DEVULAPALLI, Balaji ,  KIMBEL, Steven L. ,  DESHPANDE, Aditya J.

IPC: C30B11/00

CPC classification number: C30B11/003 ,  C30B11/002

Abstract: A directional solidification furnace comprises a crucible assembly including a crucible for containing a melt having walls and a base with an opening therein, a crucible support for supporting the crucible, and a lid covering the crucible. A plate is received in the opening in the base. The plate has a higher thermal conductivity than that of the base. The base can include a composite having an additive such that the composite base has a higher thermal conductivity than a comparable without the additive.

Abstract translation: 定向凝固炉包括坩埚组件，坩埚组件包括用于容纳具有壁的熔体的坩埚和其中具有开口的底座，用于支撑坩埚的坩埚支撑件和覆盖坩埚的盖子。 在基座的开口中容纳板。 该板具有比基座更高的热导率。 基底可以包括具有添加剂的复合材料，使得复合基底具有比不具有添加剂的更高的热导率。

公开(公告)号：WO2013040372A1

公开(公告)日：2013-03-21

申请号：PCT/US2012/055444

申请日：2012-09-14

Applicant: MEMC SINGAPORE PTE, LTD. ,  DESHPANDE, Aditya ,  FERRY, Lee William ,  MEYER, Benjamin Michael

Inventor： DESHPANDE, Aditya ,  FERRY, Lee William ,  MEYER, Benjamin Michael

IPC: C01B33/037 ,  C30B11/00 ,  C30B29/06 ,  C30B28/06

CPC classification number: F27B14/08 ,  C01B33/02 ,  C01B33/037 ,  C30B11/003 ,  C30B28/06 ,  C30B29/06 ,  Y10T428/12

Abstract: A multi - crystalline silicon ingot having a mass of greater than about 1000 kg, a directional solidification method of producing the ingot, and a directional solidification furnace having movable insulation and coding plates for producing the ingot are disclosed.

Abstract translation: 公开了具有大于约1000kg的质量的多晶硅锭，用于生产锭的定向凝固方法和具有用于制造锭的可移动绝缘和编码板的定向凝固炉。

公开(公告)号：WO2011009062A4

公开(公告)日：2011-06-09

申请号：PCT/US2010042309

申请日：2010-07-16

Applicant: MEMC SINGAPORE PTE LTD ,  PHILLIPS RICHARD J ,  KIMBEL STEVEN L ,  DESHPANDE ADITYA ,  SHI GANG

Inventor： PHILLIPS RICHARD J ,  KIMBEL STEVEN L ,  DESHPANDE ADITYA ,  SHI GANG

IPC: C30B11/00 ,  C04B35/584 ,  C30B15/10 ,  C30B29/06 ,  C30B35/00

CPC classification number: C30B11/002 ,  C04B35/584 ,  C04B35/6269 ,  C04B35/6342 ,  C04B35/63488 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3418 ,  C04B2235/656 ,  C04B2235/721 ,  C30B15/10 ,  C30B29/06 ,  C30B35/002 ,  Y10T428/24

Abstract: Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon ingots and wafers with a low oxygen content.

Abstract translation: 用于保持熔融的半导体材料并用于通过定向凝固工艺制备多晶硅锭的氮化硅涂覆的坩埚; 涂装坩埚的方法; 制备硅锭和晶圆的方法; 用于涂覆具有低氧含量的坩埚和硅锭和晶片的组合物。

公开(公告)号：WO2011009062A3

公开(公告)日：2011-03-31

申请号：PCT/US2010042309

申请日：2010-07-16

Applicant: MEMC SINGAPORE PTE LTD ,  PHILLIPS RICHARD J ,  KIMBEL STEVEN L ,  DESHPANDE ADITYA ,  SHI GANG

Inventor： PHILLIPS RICHARD J ,  KIMBEL STEVEN L ,  DESHPANDE ADITYA ,  SHI GANG

IPC: C30B11/00 ,  C04B35/584 ,  C30B15/10 ,  C30B29/06 ,  C30B35/00

CPC classification number: C30B11/002 ,  C04B35/584 ,  C04B35/6269 ,  C04B35/6342 ,  C04B35/63488 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3418 ,  C04B2235/656 ,  C04B2235/721 ,  C30B15/10 ,  C30B29/06 ,  C30B35/002 ,  Y10T428/24

Abstract: Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon ingots and wafers with a low oxygen content.

Abstract translation: 氮化硅涂层的坩埚，用于保持熔化的半导体材料并用于通过定向凝固工艺制备多晶硅锭; 涂覆坩埚的方法; 制备硅锭和晶片的方法; 用于涂覆坩埚和硅锭的组合物以及具有低氧含量的晶片。

公开(公告)号：WO2011009062A2

公开(公告)日：2011-01-20

申请号：PCT/US2010/042309

申请日：2010-07-16

Applicant: MEMC SINGAPORE PTE, LTD. ,  PHILLIPS, Richard J. ,  KIMBEL, Steven L. ,  DESHPANDE, Aditya ,  SHI, Gang

Inventor： PHILLIPS, Richard J. ,  KIMBEL, Steven L. ,  DESHPANDE, Aditya ,  SHI, Gang

IPC: C30B11/00 ,  C30B15/10 ,  C30B29/06 ,  C30B35/00 ,  C04B35/584

CPC classification number: C30B11/002 ,  C04B35/584 ,  C04B35/6269 ,  C04B35/6342 ,  C04B35/63488 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3418 ,  C04B2235/656 ,  C04B2235/721 ,  C30B15/10 ,  C30B29/06 ,  C30B35/002 ,  Y10T428/24

Abstract: Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon ingots and wafers with a low oxygen content.

Abstract translation: 用于保持熔融半导体材料并用于通过定向凝固工艺制备多晶硅锭的氮化硅涂覆的坩埚; 涂覆坩埚的方法; 制备硅锭和晶片的方法; 用于涂覆坩埚，硅锭和低氧含量晶片的组合物。

公开(公告)号：WO2018215848A1

公开(公告)日：2018-11-29

申请号：PCT/IB2018/051918

申请日：2018-03-22

Applicant: KUMAR, Rahul ,  DESHPANDE, Aditya M ,  SAHA, Aman K ,  SIDDAMAL, Saroja V ,  KUMAR, Vivek

Inventor： KUMAR, Rahul ,  DESHPANDE, Aditya M ,  SAHA, Aman K ,  SIDDAMAL, Saroja V ,  KUMAR, Vivek

IPC: B60G13/14 ,  F03G7/08 ,  B60K25/10 ,  H02K7/18

CPC classification number: B60G13/14 ,  B60G13/18 ,  B60G2300/60 ,  B60K25/10 ,  B60K2025/106 ,  F03G7/08 ,  H02K35/00

Abstract: An energy recovery system 100 in a suspension system of an automobile, the energy recovery system comprising an energy recovery unit 101 coupled with a shock absorber 102. The energy recovery unit 101 further comprising a direction control valve 103, a control mechanism 105, a linear generator 106 and a power electronics unit 107 wherein the system is enabled to convert the linear motion obtained in the shock absorber to a reciprocating motion in the double acting cylinder using the direction control valve wherein the reciprocating motion enables the piston rod having the linear magnetic array to reciprocate in the linear stator to produce electrical energy which is stored in the electrical storage unit 108 via the power electronics unit 107.

公开(公告)号：WO2016112029A1

公开(公告)日：2016-07-14

申请号：PCT/US2016/012214

申请日：2016-01-05

Applicant: SUNEDISON ENERGY INDIA PRIVATE LIMITED ,  DESHPANDE, Aditya, Janardan

Inventor： DESHPANDE, Aditya, Janardan ,  KOPPIKAR, Sandeep, Rammohan ,  CHAUDHARI, Vikrant, Ashok ,  RHEE, Eugene ,  AMIN, Dinesh, Somabhai

IPC: H01L31/05 ,  H02S40/22 ,  H01L31/054 ,  H01L31/18 ,  H01B13/00 ,  H01L23/00

CPC classification number: H01L31/0508 ,  H01L24/29 ,  H01L24/83 ,  H01L31/0504 ,  H01L31/0512 ,  H01L31/0543 ,  H01L31/0547 ,  H01L31/188 ,  H02S40/22 ,  Y02E10/52

Abstract: A method for texturing a photovoltaic module ribbon on a photovoltaic cell including a plurality of first electrodes on a first side and a plurality of second electrodes on a second side, and coupling a first photovoltaic module ribbon to the plurality of first electrodes. The method also includes positioning the photovoltaic cell on a textured base having a texture embodied thereon, where the first photovoltaic module ribbon is substantially contacting the texture. The method further includes coupling a second photovoltaic module ribbon to the plurality of second electrodes, and transferring the texture of the textured base to the first ribbon using heat energy released when the second photovoltaic module ribbon is coupled to the plurality of second electrodes.

Abstract translation: 一种用于在光伏电池上纹理化光伏模块带的方法，所述光伏电池包括在第一侧上的多个第一电极和在第二侧上的多个第二电极，以及将第一光伏模块带耦合到所述多个第一电极。 该方法还包括将光伏电池定位在具有体现在其上的纹理的纹理基底上，其中第一光伏模块带基本上接触纹理。 该方法还包括将第二光伏模块带耦合到多个第二电极，并且使用当第二光伏模块带耦合到多个第二电极时释放的热能将纹理基底的纹理转移到第一带。