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    CRUCIBLE FOR USE IN A DIRECTIONAL SOLIDIFICATION FURNACE
    1.
    发明申请
    CRUCIBLE FOR USE IN A DIRECTIONAL SOLIDIFICATION FURNACE 审中-公开
    可用于方向性固化炉

    公开(公告)号：WO2011092659A1

    公开(公告)日：2011-08-04

    申请号：PCT/IB2011/050392

    申请日：2011-01-28

    Applicant: MEMC SINGAPORE PTE, LTD. ,  PHILLIPS, Richard J. ,  DEVULAPALLI, Balaji ,  KIMBEL, Steven L. ,  DESHPANDE, Aditya J.

    Inventor： PHILLIPS, Richard J. ,  DEVULAPALLI, Balaji ,  KIMBEL, Steven L. ,  DESHPANDE, Aditya J.

    IPC: C30B11/00

    CPC classification number: C30B11/003 ,  C30B11/002

    Abstract: A directional solidification furnace comprises a crucible assembly including a crucible for containing a melt having walls and a base with an opening therein, a crucible support for supporting the crucible, and a lid covering the crucible. A plate is received in the opening in the base. The plate has a higher thermal conductivity than that of the base. The base can include a composite having an additive such that the composite base has a higher thermal conductivity than a comparable without the additive.

    Abstract translation: 定向凝固炉包括坩埚组件，坩埚组件包括用于容纳具有壁的熔体的坩埚和其中具有开口的底座，用于支撑坩埚的坩埚支撑件和覆盖坩埚的盖子。 在基座的开口中容纳板。 该板具有比基座更高的热导率。 基底可以包括具有添加剂的复合材料，使得复合基底具有比不具有添加剂的更高的热导率。

    METHODS FOR PREPARING A MELT OF SILICON POWDER FOR SILICON CRYSTAL GROWTH
    3.
    发明申请
    METHODS FOR PREPARING A MELT OF SILICON POWDER FOR SILICON CRYSTAL GROWTH 审中-公开
    制备硅晶体生长用硅粉的方法

    公开(公告)号：WO2010053915A2

    公开(公告)日：2010-05-14

    申请号：PCT/US2009/063114

    申请日：2009-11-03

    Applicant: MEMC ELECTRONIC MATERIALS, INC. ,  MASSOUD, Javidi ,  KIMBEL, Steven L.

    Inventor： MASSOUD, Javidi ,  KIMBEL, Steven L.

    IPC: C30B15/00 ,  C30B29/06

    CPC classification number: C30B15/00 ,  C30B29/06

    Abstract: Methods for preparing a melt from silicon powder for use in growing a single crystal or polycrystalline silicon ingot in accordance with the Czochralski method that include removal of silicon oxides from the powder; application of a vacuum to remove air and other oxidizing gases; controlling the position of the charge relative to the heater during and after melting of the powder and maintaining the charge above its melting temperature for a period of time to allow oxides to dissolve; and use of a removable spacer between the crucible sidewall and the silicon powder charge to reduce oxides and silicon bridging.

    Abstract translation: 用于根据切克劳斯基方法从硅粉制备用于生长单晶或多晶硅锭的熔体的方法，所述方法包括从粉末中除去氧化硅; 施加真空以除去空气和其他氧化气体; 在粉末熔化期间和之后控制炉料相对于加热器的位置，并将炉料保持在其熔化温度以上一段时间以使氧化物溶解; 并在坩埚侧壁和硅粉末电荷之间使用可移除的垫片以减少氧化物和硅桥接。

    METHOD FOR PREPARING MOLTEN SILICON MELT USING HIGH PRESSURE MELTDOWN
    5.
    发明申请
    METHOD FOR PREPARING MOLTEN SILICON MELT USING HIGH PRESSURE MELTDOWN 审中-公开
    使用高压硅胶制备MOLT硅胶的方法

    公开(公告)号：WO2014051539A1

    公开(公告)日：2014-04-03

    申请号：PCT/US2012/057028

    申请日：2012-09-25

    Applicant: MEMC ELECTRONIC MATERIALS S.P.A. ,  PORRINI, Maria ,  KIMBEL, Steven L. ,  SREEDHARAMURTHY, Hariprasad ,  BONANNO, Luigi ,  DIODA, Mauro ,  AGOSTINI, Giorgio

    Inventor： PORRINI, Maria ,  KIMBEL, Steven L. ,  SREEDHARAMURTHY, Hariprasad ,  BONANNO, Luigi ,  DIODA, Mauro ,  AGOSTINI, Giorgio

    IPC: C30B15/02 ,  C30B35/00 ,  C30B29/06

    CPC classification number: C30B15/02 ,  C30B29/06 ,  C30B35/007

    Abstract: A method for melting granular polysilicon in a crucible to reduce silicon splatter includes melting a quantity of polysilicon in the crucible at a first pressure and a first argon flow rate to the crucible to form molten silicon, increasing pressure from the first pressure to a second pressure, and increasing the first argon flow rate to a second argon flow rate. The method also includes supplying granular polysilicon into the crucible at the second pressure and the second argon flow rate and decreasing the pressure to a pressure less than the second pressure and decreasing the argon flow rate to an argon flow rate less than the second argon flow rate after supplying the granular polysilicon into the crucible.

    Abstract translation: 一种用于熔化坩埚中的颗粒多晶硅以减少硅飞溅的方法包括：以坩埚中的第一压力和第一氩气流量将坩埚中的多晶硅的数量熔化到坩埚中以形成熔融硅，从而将压力从第一压力增加到第二压力 并且将第一氩气流量增加到第二氩气流量。 该方法还包括在第二压力和第二氩气流速下将颗粒状多晶硅供应到坩埚中，并将压力降低到小于第二压力的压力，并将氩气流速降低至小于第二氩气流量的氩气流量 在颗粒状多晶硅供应到坩埚中之后。

    MEASURING A CRYSTAL GROWTH FEATURE USING MULTIPLE CAMERAS
    6.
    发明申请
    MEASURING A CRYSTAL GROWTH FEATURE USING MULTIPLE CAMERAS 审中-公开
    使用多个摄像机测量晶体生长特征

    公开(公告)号：WO2012090172A1

    公开(公告)日：2012-07-05

    申请号：PCT/IB2011/055994

    申请日：2011-12-28

    Applicant: MEMC ELECTRONIC MATERIALS, INC. ,  KIMBEL, Steven L. ,  FUERHOFF, Robert H.

    Inventor： KIMBEL, Steven L. ,  FUERHOFF, Robert H.

    IPC: C30B15/26

    CPC classification number: C30B15/26

    Abstract: Three-dimensional measurement of a crystal being pulled from a crucible is described. A first camera captures a first image of the crystal on a first image plane and a second camera captures a second image of the crystal on a second image plane. A mathematical model of a crystal during crystal growth is generated. The model includes a plurality of model sample points. A crystal growth feature is detected within the first image and the second image. A first error value is determined by comparing the model to the at least one crystal growth feature within the first image and a second error value is determined by comparing the model to the at least one crystal growth feature within the second image. An estimated 3-D metrology value associated with the at least one crystal growth feature is generated by adjusting the mathematical model to minimize the determined first error value and the determined second error value.

    Abstract translation: 描述了从坩埚中拉出的晶体的三维测量。 第一相机在第一图像平面上捕获晶体的第一图像，而第二相机在第二图像平面上捕获晶体的第二图像。 产生晶体生长期间晶体的数学模型。 该模型包括多个模型采样点。 在第一图像和第二图像内检测到晶体生长特征。 通过将模型与第一图像中的至少一个晶体生长特征进行比较来确定第一误差值，并且通过将该模型与第二图像内的至少一个晶体生长特征进行比较来确定第二误差值。 通过调整数学模型来生成与至少一个晶体生长特征相关联的估计的三维测量值，以最小化确定的第一误差值和确定的第二误差值。

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