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公开(公告)号：WO2010150114A3
公开(公告)日：2010-12-29
申请号：PCT/IB2010/052277
申请日：2010-05-21
Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLC , KONINKLIJKE PHILIPS ELECTRONICS N.V. , EPLER, John E. , DAVID, Aurelien J.F.
Inventor： EPLER, John E. , DAVID, Aurelien J.F.
Abstract: Embodiments of the invention include a semiconductor structure comprising a Ill-nitride light emitting layer (24) disposed between an n-type region (22) and a p-type region (26). A contact disposed on the p-type region includes a transparent conductive material (28) in direct contact with the p-type region (26), a reflective metal layer (34), and a transparent insulating material (30) disposed between the transparent conductive layer (28) and the reflective metal layer (34). In a plurality of openings (32) in the transparent insulating material (30), the transparent conductive material (28) is in direct contact with the reflective metal layer.
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2.发明申请SEMICONDUCTOR LIGHT EMITTING DEVICE WITH A CONTACT FORMED ON A TEXTURED SURFACE 审中-公开具有在纹理表面形成接触的半导体发光器件
公开(公告)号：WO2010146489A1
公开(公告)日：2010-12-23
申请号：PCT/IB2010/052374
申请日：2010-05-27
Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLC , KONINKLIJKE PHILIPS ELECTRONICS N.V. , EPLER, John, E.
Inventor： EPLER, John, E.
CPC classification number: H01L33/0079 , H01L33/382 , H01L2933/0016
Abstract: A device includes a semiconductor structure comprising a light emitting layer (24) disposed between an n-type region (22) and a p-type region (26). The semiconductor structure includes an n-contact region (23) and a p-contact region (25). A cross section of the n-contact region (23) comprises a plurality of first regions (28) wherein portions of the light emitting layer (24) and p-type region (26) are removed to expose the n-type region (22). The plurality of first regions (28) are separated by a plurality of second regions (27) wherein the light emitting layer (24) and p-type region (26) remain in the device. The device further includes a first metal contact (40) formed over the semiconductor structure in the p-contact region (25) and a second metal contact (38) formed over the semiconductor structure in the n-contact region (23). The second metal contact (38) is in electrical contact with at least one of the second regions (27) in the n-contact region (23).
Abstract translation: 一种器件包括半导体结构，其包括设置在n型区域（22）和p型区域（26）之间的发光层（24）。 半导体结构包括n接触区域（23）和p-接触区域（25）。 n接触区域（23）的横截面包括多个第一区域（28），其中除去发光层（24）和p型区域（26）的部分以露出n型区域（22 ）。 多个第一区域（28）由多个第二区域（27）分开，其中发光层（24）和p型区域（26）保留在该装置中。 该器件还包括形成在p接触区域（25）中的半导体结构上的第一金属接触（40）和形成在n接触区域（23）中的半导体结构之上的第二金属接触（38）。 第二金属接触件（38）与n接触区域（23）中的至少一个第二区域（27）电接触。
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公开(公告)号：WO2010150114A2
公开(公告)日：2010-12-29
申请号：PCT/IB2010052277
申请日：2010-05-21
Applicant: PHILIPS LUMILEDS LIGHTING CO , KONINKL PHILIPS ELECTRONICS NV , EPLER JOHN E , DAVID AURELIEN J F
Inventor： EPLER JOHN E , DAVID AURELIEN J F
IPC: H01L33/40
CPC classification number: H01L33/42 , H01L33/405
Abstract: Embodiments of the invention include a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. A contact disposed on the p-type region includes a transparent conductive material in direct contact with the p-type region, a reflective metal layer, and a transparent insulating material disposed between the transparent conductive layer and the reflective metal layer. In a plurality of openings in the transparent insulating material, the transparent conductive material is in direct contact with the reflective metal layer.
Abstract translation: 本发明的实施例包括包括设置在n型区域和p型区域之间的III族氮化物发光层的半导体结构。 设置在p型区域上的触点包括与p型区域直接接触的透明导电材料，反射金属层和设置在透明导电层和反射金属层之间的透明绝缘材料。 在透明绝缘材料的多个开口中，透明导电材料与反射金属层直接接触。
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公开(公告)号：WO2010100578A2
公开(公告)日：2010-09-10
申请号：PCT/IB2010/050751
申请日：2010-02-19
Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLC , KONINKLIJKE PHILIPS ELECTRONICS N.V. , EPLER, John E. , KRAMES, Michael R. , NEFF, James G.
Inventor： EPLER, John E. , KRAMES, Michael R. , NEFF, James G.
CPC classification number: H01L33/38 , H01L33/0079 , H01L33/62 , H01L2224/0401 , H01L2224/0603 , H01L2224/1403
Abstract: A compliant bonding structure is disposed between a semiconductor light emitting device and a mount (40). When the semiconductor light emitting device is attached to the mount, for example by providing pressure, heat, and/or ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps (32) that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer (46).
Abstract translation: 适应性接合结构设置在半导体发光器件与安装件（40）之间。 当半导体发光器件例如通过向半导体发光器件提供压力，热量和/或超声波能量而附着于安装件时，顺应性接合结构收缩以部分地填充半导体发光器件与半导体发光器件之间的空间 安装。 在一些实施例中，柔性结合结构是在结合期间经历塑性变形的多个金属凸块（32）。 在一些实施例中，柔性结合结构是多孔金属层（46）。
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公开(公告)号：WO2010100578A3
公开(公告)日：2010-10-28
申请号：PCT/IB2010050751
申请日：2010-02-19
Applicant: PHILIPS LUMILEDS LIGHTING CO , KONINKL PHILIPS ELECTRONICS NV , EPLER JOHN E , KRAMES MICHAEL R , NEFF JAMES G
Inventor： EPLER JOHN E , KRAMES MICHAEL R , NEFF JAMES G
CPC classification number: H01L33/38 , H01L33/0079 , H01L33/62 , H01L2224/0401 , H01L2224/0603 , H01L2224/1403
Abstract: A compliant bonding structure is disposed between a semiconductor light emitting device and a mount (40). When the semiconductor light emitting device is attached to the mount, for example by providing pressure, heat, and/or ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps (32) that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer (46).
Abstract translation: 在半导体发光器件和安装件（40）之间设置有兼容的结合结构。 当半导体发光器件例如通过向半导体发光器件提供压力，加热和/或超声能量而将半导体发光器件附接到安装件时，柔性结合结构塌缩以部分地填充半导体发光器件和 安装。 在一些实施例中，柔性接合结构是在接合期间经历塑性变形的多个金属凸块（32）。 在一些实施例中，顺应性结合结构是多孔金属层（46）。
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Patent Agency Ranking6.发明申请METHOD OF BONDING A SEMICONDUCTOR DEVICE USING A COMPLIANT BONDING STRUCTURE 审中-公开使用合适的结合结构结合半导体器件的方法
公开(公告)号：WO2010100577A2
公开(公告)日：2010-09-10
申请号：PCT/IB2010/050748
申请日：2010-02-19
Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLC , KONINKLIJKE PHILIPS ELECTRONICS N.V. , NEFF, James G. , EPLER, John E. , SCHIAFFINO, Stefano
Inventor： NEFF, James G. , EPLER, John E. , SCHIAFFINO, Stefano
CPC classification number: H01L33/62 , H01L33/0079 , H01L33/38 , H01L2224/8112 , H01L2224/81801
Abstract: A compliant bonding structure is disposed between a semiconductor device and a mount (40). In some embodiments, the device is a light emitting device. When the semiconductor light emitting device is attached to the mount, for example by providing ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps (32) that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer (46).
Abstract translation: 在半导体器件和安装件（40）之间设置有兼容的结合结构。 在一些实施例中，该装置是发光装置。 当半导体发光器件例如通过向半导体发光器件提供超声能量而将半导体发光器件附接到安装件时，柔性结合结构塌陷以部分地填充半导体发光器件和安装件之间的空间。 在一些实施例中，柔性接合结构是在接合期间经历塑性变形的多个金属凸块（32）。 在一些实施例中，柔性结合结构是多孔金属层（46）。
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公开(公告)号：WO2010052622A1
公开(公告)日：2010-05-14
申请号：PCT/IB2009/054809
申请日：2009-10-29
Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLC , KONINKLIJKE PHILIPS ELECTRONICS N.V. , KRAMES, Michael R. , EPLER, John E. , STEIGERWALD, Daniel A. , MARGALITH, Tal
Inventor： KRAMES, Michael R. , EPLER, John E. , STEIGERWALD, Daniel A. , MARGALITH, Tal
CPC classification number: H01L33/0079 , H01L21/2654 , H01L27/153
Abstract: LED layers (18-22) are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer (44). A submount metal pattern or a metal pattern formed on the LEDs connects the LEDs in a module in series. The growth substrate is then removed, such as by laser lift-off. A semi-insulating layer is formed, prior to or after mounting, that mechanically connects the LEDs together. The semi-insulating layer may be formed by ion implantation of a layer between the substrate and the LED layers. PEC etching of the semi-insulating layer, exposed after substrate removal, may be performed by biasing the semi-insulating layer. The submount is then diced to create LED modules containing series-connected LEDs.
Abstract translation: LED层（18-22）生长在蓝宝石衬底上。 单个倒装芯片LED通过挖沟或掩模离子注入形成。 包含多个LED的模块被切割并安装在底座晶片（44）上。 在LED上形成的基座金属图案或金属图案将模块中的LED串联连接。 然后去除生长衬底，例如通过激光剥离。 在安装之前或之后形成半绝缘层，将LED机械连接在一起。 半绝缘层可以通过在衬底和LED层之间离子注入层来形成。 可以通过偏置半绝缘层来执行衬底去除后露出的半绝缘层的PEC蚀刻。 然后将底座切成块，以创建包含串联LED的LED模块。
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公开(公告)号：WO2011010235A1
公开(公告)日：2011-01-27
申请号：PCT/IB2010/052890
申请日：2010-06-24
Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLC , KONINKLIJKE PHILIPS ELECTRONICS N.V. , MARGALITH, Tal , CHOY, Henry Kwong-Hin , EPLER, John E. , SCHIAFFINO, Stefano
Inventor： MARGALITH, Tal , CHOY, Henry Kwong-Hin , EPLER, John E. , SCHIAFFINO, Stefano
CPC classification number: H01L27/153 , H01L33/007 , H01L33/0079 , H01L33/22 , H01L33/382
Abstract: A light-emitting diode (LED) is fabricated by forming the LED segments (100-1,100-2) with bond pads (114,116) covering greater than 85% of a mounting surface of the LED segments and isolation trenches (118) that electrically isolate the LED segments (100-1,100-2), mounting the LED segments on a submount (120) with a bond pad (124) that couples two or more bond pads (114,116) from the LED segments, and applying a laser lift-off to remove the growth substrate (102) from the LED layer.
Abstract translation: 通过用覆盖LED段的安装表面的85％以上的接合焊盘（114,116）和隔离沟槽（118）形成LED段（100-1,100-2）来制造发光二极管（LED），隔离沟槽 所述LED段（100-1,100-2）将所述LED段安装在具有将两个或多个接合焊盘（114,116）与所述LED段耦合的接合焊盘（124）的基座（120）上，以及施加激光剥离 以从LED层去除生长衬底（102）。
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公开(公告)号：WO2010125482A1
公开(公告)日：2010-11-04
申请号：PCT/IB2010/051489
申请日：2010-04-06
Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLC , KONINKLIJKE PHILIPS ELECTRONICS N.V. , NEFF, James G. , BIERHUIZEN, Serge J. , EPLER, John E.
Inventor： NEFF, James G. , BIERHUIZEN, Serge J. , EPLER, John E.
CPC classification number: H01L33/0095 , H01L33/0079 , H01L33/46 , H01L2924/0002 , H01L2924/00
Abstract: Light emitting diode (LED) structures are fabricated in wafer scale by mounting singulated LED dies on a carrier wafer or a stretch film, separating the LED dies to create spaces between the LED dies, applying a reflective coating over the LED dies and in the spaces between the LED dies, and separating or breaking the reflective coating in the spaces between the LED dies such that some reflective coating remains on the lateral sides of the LED die. Portions of the reflective coating on the lateral sides of the LED dies may help to control edge emission.
Abstract translation: 发光二极管（LED）结构通过将分离的LED管安装在载体晶片或拉伸膜上而制造成晶片尺寸，分离LED管芯以在LED管芯之间形成空间，在LED管芯和空间中施加反射涂层 在LED管芯之间的空间中分离或断开反射涂层，使得一些反射涂层保留在LED管芯的侧面上。 在LED管芯的侧面上的反射涂层的部分可能有助于控制边缘发射。
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公开(公告)号：WO2011061664A1
公开(公告)日：2011-05-26
申请号：PCT/IB2010/055147
申请日：2010-11-12
Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V. , PHILIPS LUMILEDS LIGHTING COMPANY, LLC , DUPONT, Frederic , EPLER, John E.
Inventor： DUPONT, Frederic , EPLER, John E.
CPC classification number: H01L33/10 , H01L33/0079 , H01L33/32 , H01L33/42 , H01L33/505
Abstract: A device includes a semiconductor structure comprising a Ill-nitride light emitting layer disposed between an n-type region and a p-type region. A transparent, conductive non-III-nitride material is disposed in direct contact with the n-type region. A total thickness of semiconductor material between the light emitting layer and the transparent, conductive non-III-nitride material is less than one micron.
Abstract translation: 一种器件包括包括设置在n型区域和p型区域之间的III族氮化物发光层的半导体结构。 透明的，导电的非III族氮化物材料设置成与n型区域直接接触。 发光层和透明导电非III族氮化物材料之间的半导体材料的总厚度小于1微米。
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