公开(公告)号：WO2013023157A3

公开(公告)日：2013-02-14

申请号：PCT/US2012/050382

申请日：2012-08-10

Applicant: FLIPCHIP INTERNATIONAL, LLC ,  FORCIER, Robert ,  SCOTT, Douglas

Inventor： FORCIER, Robert ,  SCOTT, Douglas

IPC: H01L25/16 ,  H01L23/64

Abstract: Disclosed is a package that includes a wafer substrate and a metal stack seed layer. The metal stack seed layer includes a titanium thin film outer layer. A resist layer is provided in contact with the titanium thin film outer layer of the metal stack seed layer, the resist layer forming circuitry. A method for manufacturing a package is further disclosed. A metal stack seed layer having a titanium thin film outer layer is formed. A resist layer is formed so as to be in contact with the titanium thin film outer layer of the metal stack seed layer, and circuitry is formed from the resist layer.

公开(公告)号：WO2013023157A2

公开(公告)日：2013-02-14

申请号：PCT/US2012050382

申请日：2012-08-10

Applicant: FLIPCHIP INT LLC ,  FORCIER ROBERT ,  SCOTT DOUGLAS

Inventor： FORCIER ROBERT ,  SCOTT DOUGLAS

IPC: H01L25/16 ,  H01L23/64

CPC classification number: H01L23/5389 ,  H01L23/5227 ,  H01L23/525 ,  H01L23/53223 ,  H01L24/19 ,  H01L2223/6677 ,  H01L2224/12105 ,  H01L2924/1461 ,  H01L2924/00

Abstract: Disclosed is a package that includes a wafer substrate and a metal stack seed layer. The metal stack seed layer includes a titanium thin film outer layer. A resist layer is provided in contact with the titanium thin film outer layer of the metal stack seed layer, the resist layer forming circuitry. A method for manufacturing a package is further disclosed. A metal stack seed layer having a titanium thin film outer layer is formed. A resist layer is formed so as to be in contact with the titanium thin film outer layer of the metal stack seed layer, and circuitry is formed from the resist layer.

Abstract translation: 公开了一种包括晶片衬底和金属堆叠种子层的封装。 金属堆叠种子层包括钛薄膜外层。 提供与金属堆叠种子层的钛薄膜外层，抗蚀剂层形成电路接触的抗蚀剂层。 进一步公开了一种制造封装的方法。 形成具有钛薄膜外层的金属堆叠种子层。 形成抗蚀剂层以与金属堆叠种子层的钛薄膜外层接触，并且由抗蚀剂层形成电路。