Abstract:
The present disclosure relates to a photosensitive optoelectronic device comprising two electrodes, an inorganic subcell positioned between the two electrodes, wherein the inorganic subcell comprises at least one inorganic semiconductor material having a band gap energy (E G ), and an organic sensitizing window layer disposed on the inorganic subcell. In one aspect, the organic sensitizing window layer comprises a singlet fission material. In another aspect, the organic sensitizing window layer comprises a singlet fission host and a phosphorescent emitter dopant, where the singlet fission host exhibits an excitation triplet energy (E T-SF ) greater than or equal to an excitation triplet energy (E T-PE ) exhibited by the phosphorescent emitter dopant.
Abstract:
The present disclosure generally relates to organic photosensitive optoelectronic devices comprising at least one boron dipyrrin compound. In addition, the present disclosure relates to methods of making organic photosensitive optoelectronic devices comprising at least one boron dipyrrin compound. The present disclosure also generally relates to chromophoric compounds that combine strong absorption of light at visible wavelengths with the ability to undergo symmetry-breaking intramolecular charge transfer (ICT), and their use for the generation of free carriers in organic photovoltaic cells (OPVs) and electric-field-stabilized geminate polaron pairs. The present disclosure also relates to the synthesis of such compounds, methods of manufacture, and applications in photovoltaic systems and organic lasers.
Abstract:
There is disclosed a method for preparing the surface of a metal substrate. The present disclosure also relates to an organic photovoltaic device comprising a metal substrate made by such method. Also disclosed herein is an inverted photosensitive device comprising a reflective electrode (110) comprising stainless steel foil, an organic donoracceptor heterojunction (115, 120) over the reflective electrode, and a transparent electrode (130) over the donor-acceptor heterojunction.
Abstract:
There is disclosed squaraine compounds of formula (I): wherein each of Y 1 and Y 2 is independently chosen from an optionally substituted amino group and an optionally substituted aryl group. Also described are organic optoelectronic devices comprising a Donor-Acceptor heterojunction that is formed from one or more of the squaraine compounds. A method of making the disclosed device, which may include one or more sublimation step for depositing said squaraine compound, is also disclosed.
Abstract:
The present disclosure relates to a device comprising: an anode; a cathode; an inorganic substrate; and at least one organic window layer positioned between: the anode and the inorganic substrate; or the cathode and the inorganic substrate. There is also disclosed a method of enhancing the performance of a photosensitive device having an anode, a cathode, and an inorganic substrate, the method comprising: positioning at least one organic window layer e.g PTCDA, between the anode and the cathode. In one embodiment the organic window layer may absorb light and generate excitons that migrate to the inorganic where they convert to photocurrent, thereby increasing the efficiency of the device. There is also disclosed a method of enhancing Schottky barrier height of a photosensitive device, the method being substantially similar to the previously defined method, in that it relies on positioning at least one organic window layer between the anode and the inorganic substrate; or the cathode and the inorganic substrate.
Abstract:
A first device is provided. The first device further comprises an organic light emitting device. The organic light emitting device further comprises an anode, a cathode, and an emissive layer disposed between the anode and the cathode. The emissive layer further comprises an organic host compound, an organic emitting compound capable of fluorescent emission at room temperature, and an organic dopant compound. The triplet energy of the dopant compound is lower than the triplet energy of the host compound. The dopant compound does not strongly absorb the fluorescent emission of the emitting compound.
Abstract:
A method of preparing a bulk heterojunction organic photovoltaic cell through combinations of thermal and solvent vapor annealing are described. Bulk heterojunction films may prepared by known methods such as spin coating, and then exposed to one or more vaporized solvents and thermally annealed in an effort to enhance the crystalline nature of the photoactive materials.
Abstract:
Porphyrin compounds are provided. The compounds may further comprise a fused polycyclic aromatic hydrocarbon or a fused heterocyclic aromatic. Fused polycyclic aromatic hydrocarbon s and fused heterocyclic aromatics may extend and broaden absorption, and modify the solubility, crystallinity, and film-forming properties of the porphyrin compounds. Additionally, devices comprising porphyrin compounds are also provided. The porphyrin compounds may be used in a donor/acceptor configuration with compounds, such as C 60 .
Abstract:
ABSTRACT A first device is provided. The device includes a print head. The print head further includes a first nozzle hermetically sealed to a first source of gas. The first nozzle has an aperture having a smallest dimension of 0.5 to 500 microns in a direction perpendicular to a flow direction of the first nozzle. At a distance from the aperture into the first nozzle that is 5 times the smallest dimension of the aperture of the first nozzle, the smallest dimension perpendicular to the flow direction is at least twice the smallest dimension of the aperture of the first nozzle.
Abstract:
A device comprises a plurality of fence layers of a semiconductor material and a plurality of alternating layers of quantum dots of a second semiconductor material embedded between and in direct contact with a third semiconductor material disposed in a stack between a p-type and n-type semiconductor material. Each quantum dot of the second semiconductor material and the third semiconductor material form a heterojunction having a type Il band alignment. A method for fabricating such a device is also provided.