LUNG FLUID MONITOR AND MONITORING FLUID LEVEL IN A LUNG

    公开(公告)号:WO2023076593A1

    公开(公告)日:2023-05-04

    申请号:PCT/US2022/048217

    申请日:2022-10-28

    Abstract: A lung fluid monitor monitors a fluid level in a lung and includes: a radiation source disposable on a first body surface and that produces nascent radiation, the nascent radiation: being received by the first body surface, communicated from the first body surface to a lung, attenuated proportionately to an amount of fluid in the lung, and communicated from the lung to a second body surface as attenuated radiation; a radiation detector disposable on the second body surface opposing the first body surface and in electromagnetic communication with the radiation source via the lung and that: receives the attenuated radiation from the lung and produces a detector signal from the attenuated radiation in response to receiving the attenuated radiation.

    LIGHT-INDUCED CAPACITANCE SPECTROSCOPY AND METHOD FOR OBTAINING CARRIER LIFETIME WITH MICRON/NANOMETER SCALE
    10.
    发明申请
    LIGHT-INDUCED CAPACITANCE SPECTROSCOPY AND METHOD FOR OBTAINING CARRIER LIFETIME WITH MICRON/NANOMETER SCALE 审中-公开
    光诱导电容光谱法和微波/纳米尺度获取载体寿命的方法

    公开(公告)号:WO2004070775A2

    公开(公告)日:2004-08-19

    申请号:PCT/US2003/032156

    申请日:2003-10-09

    IPC: H01L

    CPC classification number: G01R31/2648 G01R31/265

    Abstract: Measurement of capacitance and derivative capacitance (dC/dV) on a semiconductor structure under light-pumped condition is documented to measure carrier lifetime with a spatial resolution limited by physical law, depending on material properties (10 nm 100µm). An atomic force microscope or probe-station is used to position a nanometer scale tip over the surface of a semiconductor material to be probed, which is also illuminated with a controlled light source for carrier generation. The capacitance-voltage (C-V) curves or dC/dV versus voltage curves between the tip and the semiconductor are measured under these illuminating conditions with a sensitive capacitance sensor. The unique method for transient spectroscopy incorporates a unique control system and procedure in which capacitance or dC/dV signal are measured as a function of time synchronized to changing the illuminating condition. The capacitance transient can be measured at any dc voltage, but particularly useful information such as carrier density is obtained if the probe is biased at the semiconductor flatband voltage. A simple, one-dimensional model is used to determine, from the measurement of C-V or dC/dV curves, capacitance transients, and frequency-dependent capacitance variance, the carrier recombination rate, and carrier generation and recombination lifetimes in the semiconductor with a microscopic spatial resolution: The limitation of spatial resolution of this measurement is by physical law not by instrumentation. The invention encompasses several methods of acquiring the carrier lifetime on time scales of microseconds and longer with a highly localized probe which are unique with respect to previous practices. The method can easily be incorporated into various commercial instruments such as atomic force microscope, surface profiler, and probe station.

    Abstract translation: 据介绍,在光泵浦条件下半导体结构上的电容和微分电容(dC / dV)的测量是根据材料特性(10 nm100μm),通过物理定律限制的空间分辨率测量载流子寿命。 使用原子力显微镜或探针台将纳米尺度的尖端定位在待探测的半导体材料的表面上,所述半导体材料的表面也被用于载体产生的受控光源照射。 在敏感电容传感器的这些照明条件下测量尖端和半导体之间的电容电压(C-V)曲线或dC / dV与电压曲线。 用于瞬态光谱的独特方法包括独特的控制系统和程序,其中测量电容或dC / dV信号作为与改变照明条件同步的时间的函数。 电容瞬态可以在任何直流电压下测量,但是如果探针偏置在半导体平带电压下,则可获得特别有用的信息,例如载流子密度。 使用简单的一维模型,从CV或dC / dV曲线的测量中确定电容瞬变和频率依赖电容方差,载流子复合速率以及半导体中的载流子生成和复合寿命 空间分辨率:这种测量的空间分辨率的限制是物理规律不是通过仪器。 本发明包括几种采用高度局部化的探针在几秒的时间尺度上获得载流子寿命的方法,该探针对于以前的实践是独特的。 该方法可以容易地并入各种商业仪器,如原子力显微镜,表面轮廓仪和探测台。

Patent Agency Ranking