RFID READERS SYSTEMS AND METHODS FOR HOPPING AWAY FROM A FREQUENCY CHANNEL WITH RF INTERFERENCE
    2.
    发明申请
    RFID READERS SYSTEMS AND METHODS FOR HOPPING AWAY FROM A FREQUENCY CHANNEL WITH RF INTERFERENCE 审中-公开
    RFID读取器系统和方法用于从具有RF干扰的频道通道中跳出

    公开(公告)号:WO2008030446A3

    公开(公告)日:2008-06-26

    申请号:PCT/US2007019323

    申请日:2007-09-05

    Abstract: RFID readers, systems, and methods are provided for overcoming the effects of RF interference. While a system is communicating in a channel, RF interference is monitored. If it is low, then the next channel to be hopped onto is chosen in an unbiased manner. But if interference is high, then the next channel to be hopped onto is chosen in a biased manner that disfavors at least one channel over another, in view of the detected interference. The choice of the next channel can thus result in diminishing communication in channels with a lot of RF interference.

    Abstract translation: 提供RFID读取器,系统和方法来克服RF干扰的影响。 当系统正在通道中进行通信时,会监视射频干扰。 如果它是低的,那么下一个要跳过的信道被选择为不偏不倚的方式。 但是,如果干扰较高,则考虑到检测到的干扰,要跳过的下一个信道被选择为以偏置的方式,使得至少一个信道相对于另一信道不利。 因此,下一个通道的选择可以导致具有大量RF干扰的通道中的通信减少。

    ADAPTABLE BANDWIDTH RFID TAGS
    3.
    发明申请
    ADAPTABLE BANDWIDTH RFID TAGS 审中-公开
    适配带宽RFID标签

    公开(公告)号:WO2005101305A9

    公开(公告)日:2006-12-07

    申请号:PCT/US2005012490

    申请日:2005-04-12

    CPC classification number: G06K19/0723

    Abstract: RFID tags, tag circuits, and methods adapting the reception bandwidth. A tag has a decoder for decoding a first received wireless signal subject to a reception bandwidth setting. The tag also has a selector switch for transitioning to a different setting, such as by switching to using a different filter. A subsequently received second signal is decoded subject to the new reception bandwidth setting.

    Abstract translation: RFID标签,标签电路和适应接收带宽的方法。 标签具有解码器,用于对受到接收带宽设置的第一接收无线信号进行解码。 标签还具有用于转换到不同设置的选择器开关,例如通过切换到使用不同的滤波器。 随后接收的第二信号被解码经受新的接收带宽设置。

    REDUCING DATA-RATE ERRORS IN RFID SYSTEMS
    4.
    发明申请
    REDUCING DATA-RATE ERRORS IN RFID SYSTEMS 审中-公开
    降低RFID系统中的数据速率误差

    公开(公告)号:WO2006078882A2

    公开(公告)日:2006-07-27

    申请号:PCT/US2006/002002

    申请日:2006-01-19

    CPC classification number: G06K19/0723 G06K7/0008 H03J1/0058

    Abstract: RFID system components, such as readers and tags, communicate by a reader transmitting waveforms that encode a calibration symbol and a divide ratio. Tags include a processor to determine a backscatter link period result by dividing a count value representing the calibration symbol by the divide ratio and adding an adjustment. Tags modulate a backscatter waveform that includes symbols using a link period determined from the result.

    Abstract translation: 诸如读取器和标签的RFID系统组件由读取器传送,该读取器发送编码校准符号和分频比的波形。 标签包括通过将表示校准符号的计数值除以除法比率并且添加调整来确定反向散射链路周期结果的处理器。 标签使用从结果确定的链路周期调制包括符号的反向散射波形。

    PFET NONVOLATILE MEMORY
    5.
    发明申请

    公开(公告)号:WO2005109437A3

    公开(公告)日:2005-11-17

    申请号:PCT/US2005/015606

    申请日:2005-05-04

    Abstract: A nonvolatile memory cell is constructed using a floating-gate pFET readout transistor having its source tied to a power source (Vdd) and its drain providing a current which can be sensed to determine the state of the cell. The gate of the pFET readout transistor provides for charge storage which can be used to represent information such as binary bits. A control capacitor structure having its first terminal coupled to a first voltage source and its second terminal coupled to the floating gate and a tunneling capacitor structure having its first terminal coupled to a second voltage source and its second terminal coupled to the floating gate are utilized in each embodiment. The control capacitor structure is fabricated so that it has much more capacitance than does the tunneling capacitor structure (and assorted stray capacitance between the floating gate and various other nodes of the cell). Manipulation of the voltages applied to the first voltage source and second voltage source (and Vdd) controls an electric field across the capacitor structure and pFET dielectrics and thus Fowler-Nordheim tunneling of electrons onto and off of the floating gate, thus controlling the charge on the floating gate and the information value stored thereon.

    DENSE-READER RFID SYSTEM
    6.
    发明申请
    DENSE-READER RFID SYSTEM 审中-公开
    读写器RFID系统

    公开(公告)号:WO2005048312A2

    公开(公告)日:2005-05-26

    申请号:PCT/US2004/037668

    申请日:2004-11-10

    IPC: H01L

    CPC classification number: G06K7/0008 G06K19/0723

    Abstract: An RFID integrated circuit includes a demodulator to receive a first signal, the first signal having been generated by an RFID reader responsive to detection of a first environmental condition. The RFID integrated circuit further includes a controller to set, based on the first signal, a modulation format for the RFID integrated circuit and to configure the RFID integrated circuit to modulate a backscatter signal according to the modulation format.

    Abstract translation: RFID集成电路包括用于接收第一信号的解调器,所述第一信号由RFID读取器响应于检测到第一环境条件而产生。 RFID集成电路还包括控制器,用于基于第一信号设置用于RFID集成电路的调制格式,并且配置RFID集成电路以根据调制格式来调制后向散射信号。

    MODIFIED RFID TAG INVENTORYING PROCESS
    7.
    发明申请

    公开(公告)号:WO2022159608A1

    公开(公告)日:2022-07-28

    申请号:PCT/US2022/013164

    申请日:2022-01-20

    Applicant: IMPINJ, INC.

    Abstract: Protocol-specified RFID tag inventorying can be modified to streamline information exchange. For example, RFID tags may be able to respond to certain RFID reader commands with additional or other information instead of only a pseudorandom number or a certain tag identifier, or may not even respond at all. Such other information may include all or portions of other tag identifiers, or information associated with tag identifiers, such as error-checking codes or protocol control bits. Tags may also choose data stored in tag memory with location of the data known only to the tag, compare to a mask received in an inventorying command and decide to participate or not in an inventory round based on a comparison result.

    COUNTERACTING OVERTUNNELING IN NONVOLATILE MEMORY CELLS
    9.
    发明申请
    COUNTERACTING OVERTUNNELING IN NONVOLATILE MEMORY CELLS 审中-公开
    在非易失性记忆细胞中进行超量化反应

    公开(公告)号:WO2005106893A1

    公开(公告)日:2005-11-10

    申请号:PCT/US2005/013644

    申请日:2005-04-20

    Abstract: Methods and apparatuses prevent overtunneling in nonvolatile floating gate memory (NVM) cells. An individual cell includes a circuit with a transistor that has a floating gate that stores charge, and a capacitor structure for extracting charge from the gate, such as by tunneling. A counteracting circuit prevents extracting charge from the floating gate beyond a threshold, therefore preventing overtunneling or correcting for it. In one embodiment, the counteracting circuit supplies electrons to the floating gate, to compensate for tunneling beyond a point. In another embodiment, the counteracting circuit includes a switch, and a sensor to trigger the switch when the appropriate threshold is reached. The switch may be arranged in any number of suitable ways, such as to prevent a high voltage from being applied to the capacitor structure, or to prevent a power supply from being applied to a terminal of the transistor or to a well of the transistor.

    Abstract translation: 方法和装置防止非易失性浮动栅极存储器(NVM)单元中的超导。 单个电池包括具有晶体管的电路,其具有存储电荷的浮动栅极,以及用于从栅极提取电荷的电容器结构,例如通过隧穿。 反作用电路防止从浮动栅极提取电荷超过阈值,因此防止对其进行过度隧穿或纠正。 在一个实施例中,反作用电路将电子提供给浮动栅极,以补偿超出点的隧穿。 在另一个实施例中,抵消电路包括开关和当达到适当的阈值时触发开关的传感器。 开关可以以任何数量的适当方式布置,例如防止高电压施加到电容器结构,或者防止电源施加到晶体管的端子或晶体管的阱。

    REWRITEABLE ELECTRONIC FUSES
    10.
    发明申请
    REWRITEABLE ELECTRONIC FUSES 审中-公开
    可重复使用的电子熔断器

    公开(公告)号:WO2005098867A2

    公开(公告)日:2005-10-20

    申请号:PCT/US2005/010432

    申请日:2005-03-29

    CPC classification number: G11C16/0441 G11C7/20 G11C14/00 G11C16/045

    Abstract: Rewriteable electronic fuses include latches and/or logic gates coupled to one or more nonvolatile memory elements. The nonvolatile memory elements are configured to be programmed to memory values capable of causing associated electronic circuits to settle to predetermined states as power-up or reset signals are applied to the fuses. Although not required, the nonvolatile memory elements used in the rewriteable electronic fuses may comprise floating-gate transistors. An amount of charge stored on the floating gate of a given floating-gate transistor determines the memory value and, consequently, the state to which a fuse settles upon power-up or reset of the fuse.

    Abstract translation: 可重写电子熔断器包括耦合到一个或多个非易失性存储器元件的锁存器和/或逻辑门。 非易失性存储器元件被配置为被编程为存储器值,所述存储器值能够使得关联的电子电路在加电或复位信号被施加到熔丝时稳定到预定状态。 虽然不是必需的,但用于可重写电子熔丝的非易失性存储元件可以包括浮栅晶体管。 存储在给定浮置栅极晶体管的浮置栅极上的电荷量决定存储器值,并因此决定保险丝上电或复位熔断器时所处的状态。

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