Abstract:
RFID tag reply phase measurements can be used to estimate tag location and motion. The phase measurements can be used to directly calculate tag location / motion or to generate correlation probabilities with candidate tags having different location / motion characteristics. An RFID reader system can take multiple phase measurements for a tag, at different carrier frequencies, within a single inventory round, to ensure that the tag remains within range of the reader system.
Abstract:
RFID readers, systems, and methods are provided for overcoming the effects of RF interference. While a system is communicating in a channel, RF interference is monitored. If it is low, then the next channel to be hopped onto is chosen in an unbiased manner. But if interference is high, then the next channel to be hopped onto is chosen in a biased manner that disfavors at least one channel over another, in view of the detected interference. The choice of the next channel can thus result in diminishing communication in channels with a lot of RF interference.
Abstract:
RFID tags, tag circuits, and methods adapting the reception bandwidth. A tag has a decoder for decoding a first received wireless signal subject to a reception bandwidth setting. The tag also has a selector switch for transitioning to a different setting, such as by switching to using a different filter. A subsequently received second signal is decoded subject to the new reception bandwidth setting.
Abstract:
RFID system components, such as readers and tags, communicate by a reader transmitting waveforms that encode a calibration symbol and a divide ratio. Tags include a processor to determine a backscatter link period result by dividing a count value representing the calibration symbol by the divide ratio and adding an adjustment. Tags modulate a backscatter waveform that includes symbols using a link period determined from the result.
Abstract:
A nonvolatile memory cell is constructed using a floating-gate pFET readout transistor having its source tied to a power source (Vdd) and its drain providing a current which can be sensed to determine the state of the cell. The gate of the pFET readout transistor provides for charge storage which can be used to represent information such as binary bits. A control capacitor structure having its first terminal coupled to a first voltage source and its second terminal coupled to the floating gate and a tunneling capacitor structure having its first terminal coupled to a second voltage source and its second terminal coupled to the floating gate are utilized in each embodiment. The control capacitor structure is fabricated so that it has much more capacitance than does the tunneling capacitor structure (and assorted stray capacitance between the floating gate and various other nodes of the cell). Manipulation of the voltages applied to the first voltage source and second voltage source (and Vdd) controls an electric field across the capacitor structure and pFET dielectrics and thus Fowler-Nordheim tunneling of electrons onto and off of the floating gate, thus controlling the charge on the floating gate and the information value stored thereon.
Abstract:
An RFID integrated circuit includes a demodulator to receive a first signal, the first signal having been generated by an RFID reader responsive to detection of a first environmental condition. The RFID integrated circuit further includes a controller to set, based on the first signal, a modulation format for the RFID integrated circuit and to configure the RFID integrated circuit to modulate a backscatter signal according to the modulation format.
Abstract:
Protocol-specified RFID tag inventorying can be modified to streamline information exchange. For example, RFID tags may be able to respond to certain RFID reader commands with additional or other information instead of only a pseudorandom number or a certain tag identifier, or may not even respond at all. Such other information may include all or portions of other tag identifiers, or information associated with tag identifiers, such as error-checking codes or protocol control bits. Tags may also choose data stored in tag memory with location of the data known only to the tag, compare to a mask received in an inventorying command and decide to participate or not in an inventory round based on a comparison result.
Abstract:
Embodiments are directed to a Radio Frequency Identification (RFID) integrated circuit (IC) having a first circuit block electrically coupled to first and second antenna contacts. The first antenna contact is disposed on a first surface of the IC and the second antenna contact is disposed on a second surface of the IC different from the first surface. The first and second antenna contacts are electrically disconnected from each other.
Abstract:
Methods and apparatuses prevent overtunneling in nonvolatile floating gate memory (NVM) cells. An individual cell includes a circuit with a transistor that has a floating gate that stores charge, and a capacitor structure for extracting charge from the gate, such as by tunneling. A counteracting circuit prevents extracting charge from the floating gate beyond a threshold, therefore preventing overtunneling or correcting for it. In one embodiment, the counteracting circuit supplies electrons to the floating gate, to compensate for tunneling beyond a point. In another embodiment, the counteracting circuit includes a switch, and a sensor to trigger the switch when the appropriate threshold is reached. The switch may be arranged in any number of suitable ways, such as to prevent a high voltage from being applied to the capacitor structure, or to prevent a power supply from being applied to a terminal of the transistor or to a well of the transistor.
Abstract:
Rewriteable electronic fuses include latches and/or logic gates coupled to one or more nonvolatile memory elements. The nonvolatile memory elements are configured to be programmed to memory values capable of causing associated electronic circuits to settle to predetermined states as power-up or reset signals are applied to the fuses. Although not required, the nonvolatile memory elements used in the rewriteable electronic fuses may comprise floating-gate transistors. An amount of charge stored on the floating gate of a given floating-gate transistor determines the memory value and, consequently, the state to which a fuse settles upon power-up or reset of the fuse.