公开(公告)号：WO2009052453A2

公开(公告)日：2009-04-23

申请号：PCT/US2008080400

申请日：2008-10-18

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  JEON YONGBAE ,  SINGH VIKRAM ,  MILLER TIMOTHY J ,  FANG ZIWEI ,  WALTHER STEVEN R ,  GUPTA ATUL

Inventor： JEON YONGBAE ,  SINGH VIKRAM ,  MILLER TIMOTHY J ,  FANG ZIWEI ,  WALTHER STEVEN R ,  GUPTA ATUL

IPC: H01L21/22 ,  C23C14/00 ,  C23C16/00 ,  H01J37/32 ,  H01L21/26

CPC classification number: H01J37/32642 ,  H01J37/32412 ,  H01J37/32935

Abstract: A method of plasma doping includes generating a plasma comprising dopant ions proximate to a platen supporting a substrate in a plasma chamber. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. At least one sensor measuring data related to charging conditions favorable for forming an electrical discharge is monitored. At least one plasma process parameter is modified in response to the measured data, thereby reducing a probability of forming an electrical discharge.

Abstract translation: 等离子体掺杂的方法包括在等离子体室中产生包括支撑衬底的台板附近的掺杂剂离子的等离子体。 台板被偏压为具有负电位的偏压电压波形，该偏压电压波形吸引等离子体中的离子到等离子体掺杂的基板。 监测至少一个传感器测量与有利于形成放电的充电条件有关的数据。 响应于所测量的数据修改至少一个等离子体工艺参数，从而降低形成放电的可能性。

公开(公告)号：WO2009052453A3

公开(公告)日：2009-04-23

申请号：PCT/US2008/080400

申请日：2008-10-18

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. ,  JEON, Yongbae ,  SINGH, Vikram ,  MILLER, Timothy, J. ,  FANG, Ziwei ,  WALTHER, Steven, R. ,  GUPTA, Atul

Inventor： JEON, Yongbae ,  SINGH, Vikram ,  MILLER, Timothy, J. ,  FANG, Ziwei ,  WALTHER, Steven, R. ,  GUPTA, Atul

IPC: H01L21/22 ,  H01L21/265 ,  C23C16/00 ,  C23C14/00 ,  H01J37/32

Abstract: A method of plasma doping includes generating a plasma comprising dopant ions proximate to a platen supporting a substrate in a plasma chamber. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. At least one sensor measuring data related to charging conditions favorable for forming an electrical discharge is monitored. At least one plasma process parameter is modified in response to the measured data, thereby reducing a probability of forming an electrical discharge.