公开(公告)号：WO2011130014A2

公开(公告)日：2011-10-20

申请号：PCT/US2011/030737

申请日：2011-03-31

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. ,  MAYNARD, Helen ,  SINGH, Vikram ,  RADOVANOV, Svetlana ,  PERSING, Harold

Inventor： MAYNARD, Helen ,  SINGH, Vikram ,  RADOVANOV, Svetlana ,  PERSING, Harold

IPC: H01L21/265

CPC classification number: H01L21/02274 ,  H01L21/2236 ,  H01L21/3065 ,  H01L29/66803

Abstract: A plasma processing method is provided. The plasma processing method includes using the after-glow of a pulsed power plasma to perform conformal processing. During the afterglow, the equipotential field lines follow the contour of the workpiece surface, allowing ions to be introduced in a variety of incident angles, especially to non-planar surfaces, in another aspect of the disclosure, the platen may be biased positively during the plasma afterglow to attract negative ions toward the workpiece. Various conformal processing steps, such as implantation, etching and deposition may be performed.

Abstract translation: 提供等离子体处理方法。 等离子体处理方法包括使用脉冲功率等离子体的余辉进行保形加工。 在余辉期间，等电场线跟随工件表面的轮廓，允许离子以各种入射角度，特别是在非平面表面上被引入，在本公开的另一方面，压板可以在 等离子体余辉吸引负离子朝向工件。 可以执行各种适形处理步骤，例如植入，蚀刻和沉积。

公开(公告)号：WO2011047142A2

公开(公告)日：2011-04-21

申请号：PCT/US2010052654

申请日：2010-10-14

Applicant: VARIAM SEMICONDUCTIOR EQUIPMENT ASSOCIATES INC ,  PAPASOULIOTIS GEORGE D ,  SINGH VIKRAM ,  YIN HEYUN ,  MAYNARD HELEN L ,  GODET LUDOVIC

Inventor： PAPASOULIOTIS GEORGE D ,  SINGH VIKRAM ,  YIN HEYUN ,  MAYNARD HELEN L ,  GODET LUDOVIC

IPC: H01L21/265

CPC classification number: H01L21/2236 ,  H01J37/321 ,  H01J37/32706 ,  H01J37/32834 ,  H01L29/66803

Abstract: A method of processing a substrate having horizontal and non-horizontal surfaces is disclosed. The substrate is implanted with particles using an ion implanter. During the ion implant, due to the nature of the implant process, a film may be deposited on the surfaces, wherein the thickness of this film is thicker on the horizontal surfaces. The presences of this film may adversely alter the properties of the substrate. To rectify this, a second process step is performed to remove the film deposited on the horizontal surfaces. In some embodiments, an etching process is used to remove this film. In some embodiments, a material modifying step is used to change the composition of the material comprising the film. This material modifying step may be instead of, or in addition to the etching process.

Abstract translation: 公开了一种处理具有水平和非水平表面的基板的方法。 使用离子注入机将基片注入颗粒。 在离子注入期间，由于植入工艺的性质，可以在表面上沉积膜，其中该膜的厚度在水平表面上较厚。 该膜的存在可能不利地改变基底的性质。 为了纠正这一点，执行第二工艺步骤以去除沉积在水平表面上的膜。 在一些实施例中，使用蚀刻工艺去除该膜。 在一些实施方案中，材料改性步骤用于改变包含膜的材料的组成。 该材料修改步骤可以代替蚀刻工艺，也可以除了蚀刻工艺之外。

公开(公告)号：WO2010115114A2

公开(公告)日：2010-10-07

申请号：PCT/US2010/029799

申请日：2010-04-02

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES ,  GODET, Ludovic ,  MILLER, Timothy, J. ,  PAPASOULIOTIS, George, D. ,  SINGH, Vikram

Inventor： GODET, Ludovic ,  MILLER, Timothy, J. ,  PAPASOULIOTIS, George, D. ,  SINGH, Vikram

IPC: H01L21/205 ,  H01L21/3065

CPC classification number: B44C1/227 ,  C23C16/045 ,  C23C16/50 ,  H01J37/32412 ,  H01J37/32623 ,  H01J2237/3344 ,  H01J2237/3345

Abstract: A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition of material is disclosed, in this embodiment, the plasma sheath shape is modified to allow material to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of different features can be deposited onto. In another embodiment, a plasma processing tool is used to etch a workpiece. In this embodiment, the plasma sheath shape is altered to allow ions to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of differently shaped features can be created.

Abstract translation: 使用等离子体处理工具将材料沉积在工件上。 例如，公开了一种用于共形沉积材料的方法，在该实施例中，等离子体护套形状被修改以允许材料在入射角的范围内冲击工件。 通过随时间改变入射角度的范围，可以将各种不同的特征沉积在其上。 在另一个实施例中，使用等离子体处理工具来蚀刻工件。 在该实施例中，等离子体鞘形状被改变以允许离子在入射角的范围内冲击工件。 通过随时间改变入射角的这个范围，可以产生各种不同形状的特征。

公开(公告)号：WO2010048161A8

公开(公告)日：2010-06-24

申请号：PCT/US2009061298

申请日：2009-10-20

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  MURAKAWA SHIGEMI ,  SINGH VIKRAM ,  PAPASOULIOTIS GEORGE D ,  OLSON JOSEPH C ,  MURPHY PAUL J ,  DICKERSON GARY E

Inventor： MURAKAWA SHIGEMI ,  SINGH VIKRAM ,  PAPASOULIOTIS GEORGE D ,  OLSON JOSEPH C ,  MURPHY PAUL J ,  DICKERSON GARY E

IPC: H01L21/205

CPC classification number: C23C16/45544

Abstract: Techniques for atomic layer deposition (ALD) are disclosed, in one particular exemplary embodiment, the techniques may be realized as a system for ALD comprising a plurality of reactors in a stacked configuration, wherein each reactor comprises a wafer holding portion for holding a target wafer, a gas assembly coupled to the plurality of reactors and configured to provide at least one gas to at least one of the plurality of reactors, and an exhaust assembly coupled to the plurality of reactors and configured to exhaust the at least one gas from the at least one of the plurality of reactors. The gas assembly may further comprise a valve assembly coupled to each of the first gas inlet, the second gas inlet, and the third gas inlet, where the valve assembly is configured to selectively release at least one of the first gas, the second gas, and the third gas.

Abstract translation: 在一个具体的示例性实施方案中，公开了用于原子层沉积（ALD）的技术，所述技术可以被实现为包括堆叠配置中的多个反应器的ALD系统，其中每个反应器包括用于保持目标晶片的晶片保持部分 耦合到所述多个反应器并被配置为向所述多个反应器中的至少一个提供至少一个气体的气体组件，以及联接到所述多个反应器的排气组件，并被配置为从所述多个反应器排出所述至少一种气体 多个反应堆中的至少一个。 气体组件还可以包括联接到第一气体入口，第二气体入口和第三气体入口中的每一个的阀组件，其中阀组件构造成选择性地释放第一气体，第二气体， 和第三气体。

公开(公告)号：WO2008103304A3

公开(公告)日：2009-05-22

申请号：PCT/US2008002066

申请日：2008-02-15

Applicant: EXXONMOBIL RES & ENG CO ,  SHARMA ARUN K ,  SIDEROPOULOS THEODORE ,  STOBER BERNE K ,  ALBERT BRIAN D ,  CHEN ALVIN U ,  SINGH VIKRAM

Inventor： SHARMA ARUN K ,  SIDEROPOULOS THEODORE ,  STOBER BERNE K ,  ALBERT BRIAN D ,  CHEN ALVIN U ,  SINGH VIKRAM

IPC: B01D3/18 ,  B01D1/30 ,  B01D3/20 ,  B01D3/22

CPC classification number: B01D1/305 ,  B01D3/18 ,  B01D3/20 ,  B01D3/205

Abstract: A de-entrainment device separates entrained liquid from vapor in a fluid stream that flows through a chimney tray in a distillation tower. The separated liquid is collected and shielded from the fluid stream to prevent re-entrainment of the liquid in the vapor flowing upward into the tower. The chimney tray includes risers (3S) with hats (38) that have gutters (60) to guide liquid toward the tray deck (32), channels (80) to collect and drain liquid from the top of the hats to the tray deck, and baffles (70) extending from the risers (36) to shield the liquid collected on the tray deck from the vapor flow.

Abstract translation: 去夹带装置将流过流过蒸馏塔中的烟囱式塔板的流体流中的夹带液体与蒸汽分离。 分离的液体被收集并从流体流屏蔽，以防止液体向上流入塔中的蒸汽再次夹带。 烟囱式托盘包括具有帽子（38）的立管（3S），其具有用于将液体引向托盘甲板（32）的沟槽（60），用于将液体从帽子的顶部收集并排出到托盘面板的通道（80） 和从所述立管（36）延伸的挡板（70），以将从所述蒸汽流中收集在所述托盘甲板上的液体屏蔽。

公开(公告)号：WO2009009526A3

公开(公告)日：2009-03-12

申请号：PCT/US2008069409

申请日：2008-07-08

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  SINGH VIKRAM ,  MUKA RICHARD S ,  MILLER TIMOTHY J ,  CHOI CHANGHOON

Inventor： SINGH VIKRAM ,  MUKA RICHARD S ,  MILLER TIMOTHY J ,  CHOI CHANGHOON

IPC: H01L21/265

CPC classification number: H01L21/2236

Abstract: A platen for a processing system includes a first and a second thermal region that are separated by at least one boundary. A first fluid conduit is positioned in the first thermal region. A second fluid conduit is positioned in the second thermal region. A fluid reservoir having a first output is coupled to the first fluid conduit and a second output that is coupled to the second fluid conduit. The fluid reservoir provides fluid to the first fluid conduit with first fluid conditions that provides a first thermal conductivity to the first thermal region and provides fluid to the second fluid conduit with second fluid conditions that provides a second thermal conductivity to the second thermal region so that a predetermined thermal conductivity profile is achieved in the platen.

Abstract translation: 用于处理系统的台板包括由至少一个边界分开的第一和第二热区域。 第一流体导管定位在第一热区域中。 第二流体导管位于第二热区域中。 具有第一输出端的流体储存器连接到第一流体导管，而第二输出端连接到第二流体导管。 流体储存器向第一流体管道提供流体，其中第一流体条件向第一热区域提供第一热导率并且向第二流体管道提供流体，其中第二流体条件向第二热区域提供第二热导率，使得 在台板中获得预定的热导率分布。

公开(公告)号：WO2008091317A3

公开(公告)日：2008-12-11

申请号：PCT/US2007024217

申请日：2007-11-20

Applicant: EXXONMOBIL UPSTREAM RES CO ,  SINGH VIKRAM ,  GRAVE EDWARD J ,  NORTHROP P SCOTT ,  SUNDARAM NARASIMHAN

Inventor： SINGH VIKRAM ,  GRAVE EDWARD J ,  NORTHROP P SCOTT ,  SUNDARAM NARASIMHAN

IPC: F25J3/00

CPC classification number: B01D3/166 ,  B01D3/14 ,  B01D3/141 ,  F25J3/0209 ,  F25J3/0233 ,  F25J3/0238 ,  F25J3/0266 ,  F25J2200/02 ,  F25J2200/50 ,  F25J2200/74 ,  F25J2200/96 ,  F25J2205/20 ,  F25J2205/40 ,  F25J2205/60 ,  F25J2205/80 ,  F25J2220/66 ,  F25J2240/40 ,  F25J2270/12 ,  F25J2280/40 ,  Y02C10/12

Abstract: The present invention relates to methods and apparatuses for the operation of a distillation tower containing a controlled freezing zone and at least one distillation section. The process and tower design are utilized for the additional recovery of hydrocarbons from an acid gas. In this process, a separation process is utilized in which a multi-component feedstream is introduced into an apparatus that operates under solids forming conditions for at least one of the feedstream components. The freezable component, although typically CO2, H2S, or another acid gas, can be any component that has the potential for forming solids in the separation system. A dividing wall is added to at least a portion of the lower distillation section of the apparatus to effect the separation of at least some fraction of the hydrocarbons in that portion of the tower.

Abstract translation: 本发明涉及用于操作含有受控冷冻区和至少一个蒸馏段的蒸馏塔的方法和设备。 工艺和塔架设计用于从酸性气体中再次回收碳氢化合物。 在该方法中，使用分离方法，其中将多组分进料流引入到在至少一种进料流组分的固体形成条件下运行的装置中。 可冷冻组分虽然通常为CO 2，H 2 S或另一种酸性气体，但可以是在分离系统中具有形成固体的潜力的任何组分。 将分隔壁加入到装置的低级蒸馏段的至少一部分中以在塔的该部分中分离至少一部分烃。

公开(公告)号：WO2005114692A2

公开(公告)日：2005-12-01

申请号：PCT/US2005/017699

申请日：2005-05-19

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. ,  SINGH, Vikram ,  GUPTA, Atul ,  PERSING, Harold, M. ,  WALTHER, Steven, R. ,  TESTONI, Anne, L.

Inventor： SINGH, Vikram ,  GUPTA, Atul ,  PERSING, Harold, M. ,  WALTHER, Steven, R. ,  TESTONI, Anne, L.

IPC: H01J37/00

CPC classification number: H01J37/32495 ,  H01J37/32412

Abstract: A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system including a process chamber, a source for producing a plasma in the process chamber, a platen for holding the substrate in the process chamber, and a voltage source for accelerating ions from the plasma into the substrate, depositing on interior surfaces of the process chamber a fresh coating that is similar in composition to a deposited film that results from plasma ion implantation of the substrate, before depositing the fresh coating, cleaning interior surfaces of the process chamber by removing an old film using one or more activated cleaning precursors, plasma ion implantation of the substrate according to a plasma ion implantation process, and repeating the steps of cleaning interior surfaces of the process chamber and depositing a fresh coating following plasma ion implantation of one or more substrates.

Abstract translation: 用于等离子体离子注入衬底的方法包括提供等离子体离子注入系统，其包括处理室，用于在处理室中产生等离子体的源，用于将衬底保持在处理室中的压板和用于加速离子的电压源 从等离子体进入衬底，在沉积新鲜涂层之前，在沉积新鲜涂层之前，在处理室的内表面上沉积与组合物中与等离子体离子注入导致的沉积膜相似的新涂层，清洁处理室的内表面 通过使用一种或多种激活的清洁前体去除旧膜，根据等离子体离子注入工艺等离子体离子注入基板，并重复清洁处理室的内表面并在等离子体离子注入之后沉积新涂层的步骤 或更多的基材。

公开(公告)号：WO2011019824A3

公开(公告)日：2011-04-14

申请号：PCT/US2010045180

申请日：2010-08-11

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  MAYNARD HELEN L ,  PAPASOULIOTIS GEORGE D ,  SINGH VIKRAM ,  HATEM CHRISTOPHER R ,  GODET LUDOVIC

Inventor： MAYNARD HELEN L ,  PAPASOULIOTIS GEORGE D ,  SINGH VIKRAM ,  HATEM CHRISTOPHER R ,  GODET LUDOVIC

IPC: H01L21/02

CPC classification number: H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/0259 ,  H01L21/02667 ,  H01L21/2236 ,  H01L31/0725 ,  H01L31/182 ,  H01L31/1872 ,  Y02E10/546 ,  Y02P70/521

Abstract: A method of depositing and crystallizing materials on a substrate Is disclosed, in a particular embodiment, the method may include creating a plasma having deposition- misted species and energy-carrying species. During a first time period, no bias voltage is applied to the substrate, and species are deposited on the substrate via plasma deposition. During a second lime period, a voltage is applied to the substrate, which attracts ions to and into the deposited species, thereby causing the deposited layer to crystallize. This process can be repeated until an adequate thickness is achieved, in another embodiment, the bias voltage or bias pulse duration can be varied to change the amount of crystallization that occurs. In another embodiment, a dopant may be used to dope the deposited layers.

Abstract translation: 一种在衬底上沉积和结晶材料的方法在具体实施方案中公开了该方法可以包括产生具有沉积物质和能量携带物质的等离子体。 在第一时间段期间，没有偏置电压施加到衬底，并且通过等离子体沉积物质沉积在衬底上。 在第二个石灰周期期间，向基板施加电压，其将离子吸引到沉积的物质中，从而使沉积层结晶。 可以重复该过程，直到达到足够的厚度，在另一个实施方案中，可以改变偏置电压或偏置脉冲持续时间以改变发生的结晶量。 在另一个实施方案中，可以使用掺杂剂来掺杂沉积的层。

公开(公告)号：WO2010075281A3

公开(公告)日：2010-09-16

申请号：PCT/US2009068991

申请日：2009-12-21

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  DZENGELESKI JOSEPH P ,  GAMMEL GEORGE M ,  LINDSAY BERNARD G ,  SINGH VIKRAM

Inventor： DZENGELESKI JOSEPH P ,  GAMMEL GEORGE M ,  LINDSAY BERNARD G ,  SINGH VIKRAM

IPC: H01L21/66 ,  H01L21/265

CPC classification number: H01J37/32935

Abstract: An ion uniformity monitoring device is positioned within a plasma process chamber and includes a plurality of sensors located above and a distance away from a workpiece within the chamber. The sensors are configured to detect the number of secondary electrons emitted from a surface of the workpiece exposed to a plasma process. Each sensor outputs a current signal proportional to the detected secondary electrons. A current comparator circuit outputs a processed signal resulting from each of the plurality of current signals. The detection of the secondary electrons emitted from the workpiece during plasma processing is indicative of the uniformity characteristic across the surface of the workpiece and may be performed in situ and during on-line plasma processing.

Abstract translation: 离子均匀度监测装置位于等离子体处理室内，并且包括多个传感器，所述多个传感器位于所述室内的工件之上并且远离工件。 传感器被配置为检测从暴露于等离子体工艺的工件表面发射的二次电子的数量。 每个传感器输出与检测到的二次电子成比例的电流信号。 电流比较器电路输出由多个电流信号中的每一个产生的处理信号。 在等离子体处理期间从工件发射的二次电子的检测指示工件表面上的均匀性特性，并且可以在原位执行并且在线等离子体处理期间执行。