公开(公告)号：WO2012176965A1

公开(公告)日：2012-12-27

申请号：PCT/KR2012/000204

申请日：2012-01-09

Applicant: LG INNOTEK CO., LTD. ,  JO, Yeong Deuk ,  KIM, Moo Seong ,  KANG, Seok Min

Inventor： JO, Yeong Deuk ,  KIM, Moo Seong ,  KANG, Seok Min

IPC: H01L21/205

CPC classification number: G05D21/02 ,  C23C16/325 ,  C23C16/4482 ,  C23C16/45561 ,  C23C16/52 ,  H01L21/02529 ,  H01L21/0262

Abstract: A deposition apparatus and a method of forming a thin film are provided. The deposition apparatus includes a reaction gas supply unit supplying a reaction gas, a buffer unit temporarily storing the reaction gas supplied from the reaction gas supply unit, and a deposition unit forming a thin film by using the reaction gas supplied from the buffer unit.

Abstract translation: 提供了沉积设备和形成薄膜的方法。 沉积设备包括供应反应气体的反应气体供应单元，临时储存从反应气体供应单元供应的反应气体的缓冲单元和通过使用从缓冲单元供应的反应气体形成薄膜的沉积单元。

公开(公告)号：WO2012105757A3

公开(公告)日：2012-08-09

申请号：PCT/KR2012/000128

申请日：2012-01-05

Applicant: LG INNOTEK CO., LTD. ,  JO, Yeong Deuk

Inventor： JO, Yeong Deuk

IPC: H01L21/205

Abstract: Disclosed is a deposition apparatus. The deposition apparatus includes a chamber, a susceptor in the chamber, and a wafer holder in the susceptor. The susceptor includes a susceptor upper plate and a susceptor lower plate facing the susceptor upper plate, and the susceptor upper plate includes a protrusion part.

公开(公告)号：WO2012105757A2

公开(公告)日：2012-08-09

申请号：PCT/KR2012000128

申请日：2012-01-05

Applicant: LG INNOTEK CO LTD ,  JO YEONG DEUK

Inventor： JO YEONG DEUK

IPC: H01L21/205

CPC classification number: C23C16/44 ,  C30B25/12

Abstract: Disclosed is a deposition apparatus. The deposition apparatus includes a chamber, a susceptor in the chamber, and a wafer holder in the susceptor. The susceptor includes a susceptor upper plate and a susceptor lower plate facing the susceptor upper plate, and the susceptor upper plate includes a protrusion part.

Abstract translation: 公开了一种沉积设备。 沉积设备包括腔室，腔室中的基座和基座中的晶片保持器。 基座包括基座上板和面向基座上板的基座下板，并且基座上板包括突出部。

公开(公告)号：WO2012177014A2

公开(公告)日：2012-12-27

申请号：PCT/KR2012/004674

申请日：2012-06-13

Applicant: LG INNOTEK CO., LTD. ,  HWANG, Min Young ,  KANG, Seok Min ,  KIM, Moo Seong ,  JO, Yeong Deuk

Inventor： HWANG, Min Young ,  KANG, Seok Min ,  KIM, Moo Seong ,  JO, Yeong Deuk

IPC: H01L21/20

CPC classification number: H01L29/1608 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02639 ,  H01L21/02647

Abstract: A semiconductor device according to the embodiment comprises a base substrate; patterns on the base substrate; and an epitaxial layer on the base substrate, wherein the epitaxial layer is formed on a surface of the substrate exposed among the patterns. A method for growing a semiconductor crystal comprises the steps of cleaning a silicon carbide substrate; forming patterns on the silicon carbide substrate; and forming an epitaxial layer on the silicon carbide substrate.

Abstract translation: 根据实施例的半导体器件包括基底; 基底上的图案; 以及在所述基底基板上的外延层，其中所述外延层形成在所述图案中暴露的所述基板的表面上。 一种生长半导体晶体的方法包括清洗碳化硅衬底的步骤; 在碳化硅衬底上形成图案; 以及在所述碳化硅衬底上形成外延层。

公开(公告)号：WO2012177065A3

公开(公告)日：2013-04-04

申请号：PCT/KR2012004918

申请日：2012-06-21

Applicant: LG INNOTEK CO LTD ,  JO YEONG DEUK ,  KANG SEOK MIN ,  KIM MOO SEONG

Inventor： JO YEONG DEUK ,  KANG SEOK MIN ,  KIM MOO SEONG

IPC: H01L21/205

CPC classification number: C23C16/50 ,  C23C16/452 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/0262

Abstract: A deposition apparatus according to the embodiment includes a gas supply part for supplying a first gas; an ionization part connected to the gas supply part to supply a second gas, which is obtained by ionizing the first gas; and a reaction part into which the second gas is introduced to create a reaction. A deposition method according to the embodiment includes the steps of preparing a first gas; supplying a second gas, which is obtained by ionizing the first gas; and reacting the second gas with a substrate.

Abstract translation: 根据实施例的沉积装置包括用于供应第一气体的气体供应部件; 电离部，其与气体供给部连接，供给通过使第一气体电离而得到的第二气体; 和引入第二气体以产生反应的反应部分。 根据实施例的沉积方法包括制备第一气体的步骤; 提供通过使第一气体电离而获得的第二气体; 并使第二气体与基底反应。

公开(公告)号：WO2012177065A2

公开(公告)日：2012-12-27

申请号：PCT/KR2012/004918

申请日：2012-06-21

Applicant: LG INNOTEK CO., LTD. ,  JO, Yeong Deuk ,  KANG, Seok Min ,  KIM, Moo Seong

Inventor： JO, Yeong Deuk ,  KANG, Seok Min ,  KIM, Moo Seong

IPC: H01L21/205

CPC classification number: C23C16/50 ,  C23C16/452 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/0262

Abstract: A deposition apparatus according to the embodiment includes a gas supply part for supplying a first gas; an ionization part connected to the gas supply part to supply a second gas, which is obtained by ionizing the first gas; and a reaction part into which the second gas is introduced to create a reaction. A deposition method according to the embodiment includes the steps of preparing a first gas; supplying a second gas, which is obtained by ionizing the first gas; and reacting the second gas with a substrate.

Abstract translation: 根据实施例的沉积装置包括用于供应第一气体的气体供应部件; 电离部，其与气体供给部连接，供给通过使第一气体电离而得到的第二气体; 和引入第二气体以产生反应的反应部分。 根据实施例的沉积方法包括制备第一气体的步骤; 提供通过使第一气体电离而获得的第二气体; 并使第二气体与基底反应。

公开(公告)号：WO2012102539A3

公开(公告)日：2012-08-02

申请号：PCT/KR2012/000571

申请日：2012-01-20

Applicant: LG INNOTEK CO., LTD. ,  KIM, Moo Seong ,  JO, Yeong Deuk ,  SON, Chang Hyun ,  KIM, Bum Sup

Inventor： KIM, Moo Seong ,  JO, Yeong Deuk ,  SON, Chang Hyun ,  KIM, Bum Sup

IPC: H01L21/20

Abstract: A semiconductor device comprises a base substrate, a pattern on the base substrate, a buffer layer on the base substrate, and an epitaxial layer on the buffer. The pattern is a self-assembled pattern. A method for growing a semiconductor crystal comprises cleaning a silicon carbide substrate, forming a self-assembled pattern on the silicon carbide substrate, forming a buffer layer on the silicon carbide substrate, and forming an epitaxial layer on the buffer layer. A semiconductor device comprises a base substrate comprising a pattern groove and an epitaxial layer on the base substrate. A method for growing a semiconductor crystal comprises cleaning a silicon carbide substrate, forming a self-assembled projection on the silicon carbide substrate, forming a pattern groove in the silicon carbide, and forming an epitaxial layer on the silicon carbide.

公开(公告)号：WO2012102539A2

公开(公告)日：2012-08-02

申请号：PCT/KR2012000571

申请日：2012-01-20

Applicant: LG INNOTEK CO LTD ,  KIM MOO SEONG ,  JO YEONG DEUK ,  SON CHANG HYUN ,  KIM BUM SUP

Inventor： KIM MOO SEONG ,  JO YEONG DEUK ,  SON CHANG HYUN ,  KIM BUM SUP

IPC: H01L21/20

CPC classification number: H01L29/1608 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/02617 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02658

Abstract: A semiconductor device comprises a base substrate, a pattern on the base substrate, a buffer layer on the base substrate, and an epitaxial layer on the buffer. The pattern is a self-assembled pattern. A method for growing a semiconductor crystal comprises cleaning a silicon carbide substrate, forming a self-assembled pattern on the silicon carbide substrate, forming a buffer layer on the silicon carbide substrate, and forming an epitaxial layer on the buffer layer. A semiconductor device comprises a base substrate comprising a pattern groove and an epitaxial layer on the base substrate. A method for growing a semiconductor crystal comprises cleaning a silicon carbide substrate, forming a self-assembled projection on the silicon carbide substrate, forming a pattern groove in the silicon carbide, and forming an epitaxial layer on the silicon carbide.

Abstract translation: 一种半导体器件包括基础衬底，在基础衬底上的图案，在基础衬底上的缓冲层以及在缓冲器上的外延层。 该模式是一种自组装模式。 一种用于生长半导体晶体的方法包括：清洁碳化硅衬底;在碳化硅衬底上形成自组装图案;在碳化硅衬底上形成缓冲层;以及在缓冲层上形成外延层。 一种半导体器件包括基础衬底，该基础衬底包括在该基础衬底上的图案凹槽和外延层。 用于生长半导体晶体的方法包括清洁碳化硅衬底，在碳化硅衬底上形成自组装凸起，在碳化硅中形成图案凹槽，以及在碳化硅上形成外延层。

公开(公告)号：WO2012177014A3

公开(公告)日：2013-04-04

申请号：PCT/KR2012004674

申请日：2012-06-13

Applicant: LG INNOTEK CO LTD ,  HWANG MIN YOUNG ,  KANG SEOK MIN ,  KIM MOO SEONG ,  JO YEONG DEUK

Inventor： HWANG MIN YOUNG ,  KANG SEOK MIN ,  KIM MOO SEONG ,  JO YEONG DEUK

IPC: H01L21/20

CPC classification number: H01L29/1608 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02639 ,  H01L21/02647

Abstract: A semiconductor device according to the embodiment comprises a base substrate; patterns on the base substrate; and an epitaxial layer on the base substrate, wherein the epitaxial layer is formed on a surface of the substrate exposed among the patterns. A method for growing a semiconductor crystal comprises the steps of cleaning a silicon carbide substrate; forming patterns on the silicon carbide substrate; and forming an epitaxial layer on the silicon carbide substrate.

Abstract translation: 根据实施例的半导体器件包括基底; 基底上的图案; 以及在所述基底基板上的外延层，其中所述外延层形成在所述图案中暴露的所述基板的表面上。 一种生长半导体晶体的方法包括清洗碳化硅衬底的步骤; 在碳化硅衬底上形成图案; 以及在所述碳化硅衬底上形成外延层。