公开(公告)号：WO2010126854A1

公开(公告)日：2010-11-04

申请号：PCT/US2010/032483

申请日：2010-04-27

Applicant: SEAGATE TECHNOLOGY LLC ,  ZHENG, Yuankai ,  XI, Haiwen ,  JUNG, Wonjoon ,  FENG, Xuebing ,  LOU, Xiaohua ,  GAO, Zheng

Inventor： ZHENG, Yuankai ,  XI, Haiwen ,  JUNG, Wonjoon ,  FENG, Xuebing ,  LOU, Xiaohua ,  GAO, Zheng

IPC: G11C11/16 ,  H01F10/32

CPC classification number: H01L43/02 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01L43/08

Abstract: A magnetic memory cell having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation and switchable by spin torque. The cell includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than about 500 Oe. The assist layer may have in-plane or out-of-plane anisotropy.

Abstract translation: 一种具有铁磁自由层和铁磁性固定参考层的磁存储单元，每个具有面外磁各向异性和面外磁化取向，并可通过自旋转矩切换。 电池包括靠近自由层的铁磁辅助层，辅助层具有小于约500Oe的低磁各向异性。 辅助层可具有面内或面外各向异性。

公开(公告)号：WO2010107813A1

公开(公告)日：2010-09-23

申请号：PCT/US2010/027510

申请日：2010-03-16

Applicant: SEAGATE TECHNOLOGY LLC ,  DIMITROV, Dimitar Velikov ,  GAO, Zheng ,  JUNG, Wonjoon ,  BATRA, Sharat ,  HEINONEN, Olie Gunnar

Inventor： DIMITROV, Dimitar Velikov ,  GAO, Zheng ,  JUNG, Wonjoon ,  BATRA, Sharat ,  HEINONEN, Olie Gunnar

IPC: G01R33/09

CPC classification number: G01R33/093 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3912 ,  G11B2005/3996

Abstract: A magnetic sensor includes a freelayer, a reference layer and a front shield. The freelayer has a magnetization direction substantially perpendicular to the planar orientation of the layer and extends to the media confronting surface. The reference layer has a magnetization direction substantially in the plane of the layer and substantially perpendicular to the magnetization direction of the freelayer. The reference layer is recessed from the media confronting surface and a front shield is positioned between the reference layer and the media confronting surface thereby reducing the shield-to-shield spacing and increasing the areal density of the reader.

Abstract translation: 磁传感器包括自由层，参考层和前屏蔽。 自由层具有基本上垂直于层的平面取向的磁化方向并且延伸到介质面对的表面。 参考层具有基本上在层的平面中并基本上垂直于自由层的磁化方向的磁化方向。 参考层从介质面对面凹陷，并且前屏蔽件位于参考层和介质面对面之间，从而减小屏蔽间隔和增加读取器的面密度。