公开(公告)号：WO2011056201A3

公开(公告)日：2011-05-12

申请号：PCT/US2010/002845

申请日：2010-10-27

Applicant: CALISOLAR, INC. ,  PHAN, Bill ,  ZHANG, Renhua ,  GORMAN, John ,  SIDELKHEIR, Omar ,  BLOSSE, Alain, Paul ,  KAES, Martin

Inventor： PHAN, Bill ,  ZHANG, Renhua ,  GORMAN, John ,  SIDELKHEIR, Omar ,  BLOSSE, Alain, Paul ,  KAES, Martin

IPC: H01L31/0216 ,  H01L31/18

Abstract: A polarization resistant solar cell is provided. The solar cell (200) uses a dual layer dielectric stack disposed on the front surface of the cell. The dielectric stack consists of a passivation layer (209) disposed directly on the front cell surface and comprised of either SiO x or SiON, and an outer AR coating (211) comprised of SiCN.

公开(公告)号：WO2011056200A3

公开(公告)日：2011-08-11

申请号：PCT/US2010002844

申请日：2010-10-27

Applicant: CALISOLAR INC ,  PHAN BILL ,  ZHANG RENHUA ,  GORMAN JOHN ,  SIDELKHEIR OMAR ,  RAKOTONIAINA JEAN PATRICE ,  BLOSSE ALAIN PAUL ,  KAES MARTIN

Inventor： PHAN BILL ,  ZHANG RENHUA ,  GORMAN JOHN ,  SIDELKHEIR OMAR ,  RAKOTONIAINA JEAN PATRICE ,  BLOSSE ALAIN PAUL ,  KAES MARTIN

IPC: H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/02167 ,  H01L31/02168 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

Abstract: A polarization resistant solar cell using an oxygen-rich interface layer (209) is provided. The oxygen-rich interface layer may be comprised of SiOxNy, which may have a graded profile that varies between oxygen-rich proximate to the solar cell to nitrogen-rich distal to the solar cell. A silicon oxide passivation layer (601) may be interposed between the solar cell and the SiOxNy graded dielectric layer. The graded SiOxNy dielectric layer may be replaced with a non-graded SiOxNy dielectric layer and a SiN AR coating (703).

Abstract translation: 提供了使用富氧界面层（209）的耐极化太阳能电池。 富氧界面层可以由SiO x N y组成，其可以具有在太阳能电池附近的富含氧和太阳能电池远端富氮之间变化的分级分布。 氧化硅钝化层（601）可以介于太阳能电池和SiO x N y梯度电介质层之间。 分级的SiO x N y介电层可以用非梯度的SiO x N y介电层和SiN-AR涂层（703）代替。

公开(公告)号：WO2011056201A2

公开(公告)日：2011-05-12

申请号：PCT/US2010002845

申请日：2010-10-27

Applicant: CALISOLAR INC ,  PHAN BILL ,  ZHANG RENHUA ,  GORMAN JOHN ,  SIDELKHEIR OMAR ,  BLOSSE ALAIN PAUL ,  KAES MARTIN

Inventor： PHAN BILL ,  ZHANG RENHUA ,  GORMAN JOHN ,  SIDELKHEIR OMAR ,  BLOSSE ALAIN PAUL ,  KAES MARTIN

IPC: H01L31/0216

CPC classification number: H01L31/02167 ,  H01L31/02168 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

Abstract: A polarization resistant solar cell is provided. The solar cell uses a dual layer dielectric stack disposed on the front surface of the cell. The dielectric stack consists of a passivation layer disposed directly on the front cell surface and comprised of either SiOx or SiON, and an outer AR coating comprised of SiCN.

Abstract translation: 提供了一种耐极化的太阳能电池。 太阳能电池使用设置在电池前表面上的双层电介质叠层。 电介质堆叠由直接设置在前电池表面上并由SiO x或SiON构成的钝化层和由SiCN组成的外部AR涂层组成。

公开(公告)号：WO2010126572A3

公开(公告)日：2011-01-27

申请号：PCT/US2010001175

申请日：2010-04-19

Applicant: CALISOLAR INC ,  KAES MARTIN ,  BORDEN PETER ,  OUNADJELA KAMEL ,  KRAENZL ANDREAS ,  BLOSSE ALAIN ,  KIRSCHT FRITZ G

Inventor： KAES MARTIN ,  BORDEN PETER ,  OUNADJELA KAMEL ,  KRAENZL ANDREAS ,  BLOSSE ALAIN ,  KIRSCHT FRITZ G

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/18 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/0684 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes a back surface contact grid (113) and an overlaid blanket metal reflector (117). A doped amorphous silicon layer is interposed between the contact grid and the blanket layer.

Abstract translation: 提供了简化的制造工艺和所得的双面太阳能电池（BSC），简化的制造工艺降低了制造成本。 BSC包括背面接触网格（113）和覆盖的橡皮布金属反射器（117）。 掺杂的非晶硅层介于接触网格和覆盖层之间。

公开(公告)号：WO2010126571A2

公开(公告)日：2010-11-04

申请号：PCT/US2010001174

申请日：2010-04-19

Applicant: CALISOLAR INC ,  KAES MARTIN ,  BORDEN PETER ,  OUNADJELA KAMEL ,  KRAENZL ANDREAS ,  BLOSSE ALAIN ,  KIRSCHT FRITZ G

Inventor： KAES MARTIN ,  BORDEN PETER ,  OUNADJELA KAMEL ,  KRAENZL ANDREAS ,  BLOSSE ALAIN ,  KIRSCHT FRITZ G

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/18 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/0684 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes an active region (103) located on the front surface of the substrate (101), formed for example by a phosphorous diffusion step. After removing the PSG, assuming phosphorous diffusion, and isolating the front junction, dielectric layers (105/107) are deposited on the front and back surfaces. Contact grids (109/111) are formed, for example by screen printing. Prior to depositing the back surface dielectric, a metal grid may be applied to the back surface, the back surface contact grid registered to, and alloyed to, the metal grid during contact firing.

Abstract translation: 提供了简化的制造工艺和所得的双面太阳能电池（BSC），简化的制造工艺降低了制造成本。 BSC包括位于基板（101）的前表面上的有源区（103），例如通过磷扩散步骤形成。 在去除PSG之后，假设磷扩散并隔离前端，电介质层（105/107）沉积在前表面和后表面上。 形成接触网格（109/111），例如通过丝网印刷。 在沉积后表面电介质之前，可以在接触点火期间将金属网格施加到后表面，后表面接触栅格，注册到金属栅格并与之合并。

公开(公告)号：WO2010126570A2

公开(公告)日：2010-11-04

申请号：PCT/US2010/001173

申请日：2010-04-19

Applicant: CALISOLAR, INC. ,  KAES, Martin ,  BORDEN, Peter ,  OUNADJELA, Kamel ,  KRAENZL, Andreas ,  BLOSSE, Alain ,  KIRSCHT, Fritz G.

Inventor： KAES, Martin ,  BORDEN, Peter ,  OUNADJELA, Kamel ,  KRAENZL, Andreas ,  BLOSSE, Alain ,  KIRSCHT, Fritz G.

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/18 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/0684 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes an active region (107) located on the front surface of the substrate (101), formed for example by a phosphorous diffusion step. The back surface includes a doped region (103), the doped region having the same conductivity as the substrate but with a higher doping level. Contact grids (111/113) are formed, for example by screen printing. Front junction isolation is accomplished using a laser scribe.

Abstract translation: 提供了简化的制造工艺和所得的双面太阳能电池（BSC），简化的制造工艺降低了制造成本。 BSC包括位于基板（101）的前表面上的有源区（107），例如通过磷扩散步骤形成。 背面包括掺杂区域（103），该掺杂区域具有与衬底相同的导电性但具有较高的掺杂水平。 形成接触网格（111/113），例如通过丝网印刷。 使用激光划片实现前结隔离。

公开(公告)号：WO2009114446A3

公开(公告)日：2009-09-17

申请号：PCT/US2009/036469

申请日：2009-03-09

Applicant: CALISOLAR, INC. ,  OUNADJELA, Kamel ,  RAKOTONIAINA, Jean, Patrice ,  KAES, Martin ,  ZICKERMANN, Dirk ,  BLOSSE, Alain ,  ZERGA, Abdellatif ,  HEUER, Matthias ,  KIRSCHT, Fritz

Inventor： OUNADJELA, Kamel ,  RAKOTONIAINA, Jean, Patrice ,  KAES, Martin ,  ZICKERMANN, Dirk ,  BLOSSE, Alain ,  ZERGA, Abdellatif ,  HEUER, Matthias ,  KIRSCHT, Fritz

IPC: H01L31/00

Abstract: Formation of a solar cell device from upgraded metallurgical grade silicon which has received at least one defect engineering process and including a low contact resistance electrical path. An anti- reflective coating is formed on an emitter layer and back contacts are formed on a back surface of the bulk silicon substrate. This photovoltaic device may be fired to form back surface field temperatures sufficiently low to avoid reversal of previous defect engineering processes. The process further forms openings in the anti-reflective coating and a low contact resistance metal layer, such as nickel layer, over the openings in the coating. The process may anneal the low contact resistance metal layer to form n- doped portion and complete an electrically conduct path to the n-doped layer. This low temperature metallization (e.g.,

公开(公告)号：WO2011056200A2

公开(公告)日：2011-05-12

申请号：PCT/US2010/002844

申请日：2010-10-27

Applicant: CALISOLAR, INC. ,  PHAN, Bill ,  ZHANG, Renhua ,  GORMAN, John ,  SIDELKHEIR, Omar ,  RAKOTONIAINA, Jean Patrice ,  BLOSSE, Alain Paul ,  KAES, Martin

Inventor： PHAN, Bill ,  ZHANG, Renhua ,  GORMAN, John ,  SIDELKHEIR, Omar ,  RAKOTONIAINA, Jean Patrice ,  BLOSSE, Alain Paul ,  KAES, Martin

IPC: H01L31/0216

CPC classification number: H01L31/02167 ,  H01L31/02168 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

Abstract: A polarization resistant solar cell using an oxygen-rich interface layer is provided. The oxygen-rich interface layer may be comprised of SiO x N y , which may have a graded profile that varies between oxygen-rich proximate to the solar cell to nitrogen-rich distal to the solar cell. A silicon oxide passivation layer may be interposed between the solar cell and the SiO x N y graded dielectric layer. The graded SiO x N y dielectric layer may be replaced with a non-graded SiO x N y dielectric layer and a SiN AR coating.

Abstract translation: 提供了使用富氧界面层的耐极化太阳能电池。 富氧界面层可以由SiO x N y组成，其可以具有在太阳能电池附近的富含氧和太阳能电池远端富氮之间变化的分级分布。 氧化硅钝化层可以介于太阳能电池和SiO x N y梯度电介质层之间。 分级的SiO x N y介电层可以用非梯度的SiO x N y电介质层和SiN-AR涂层代替。

公开(公告)号：WO2010126570A3

公开(公告)日：2011-02-03

申请号：PCT/US2010001173

申请日：2010-04-19

Applicant: CALISOLAR INC ,  KAES MARTIN ,  BORDEN PETER ,  OUNADJELA KAMEL ,  KRAENZL ANDREAS ,  BLOSSE ALAIN ,  KIRSCHT FRITZ G

Inventor： KAES MARTIN ,  BORDEN PETER ,  OUNADJELA KAMEL ,  KRAENZL ANDREAS ,  BLOSSE ALAIN ,  KIRSCHT FRITZ G

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/18 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/0684 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes an active region (107) located on the front surface of the substrate (101), formed for example by a phosphorous diffusion step. The back surface includes a doped region (103), the doped region having the same conductivity as the substrate but with a higher doping level. Contact grids (111/113) are formed, for example by screen printing. Front junction isolation is accomplished using a laser scribe.

Abstract translation: 提供了简化的制造工艺和所得的双面太阳能电池（BSC），简化的制造工艺降低了制造成本。 BSC包括位于基板（101）的前表面上的有源区（107），例如通过磷扩散步骤形成。 背面包括掺杂区域（103），该掺杂区域具有与衬底相同的导电性但具有较高的掺杂水平。 形成接触网格（111/113），例如通过丝网印刷。 使用激光划片实现前结隔离。

公开(公告)号：WO2010005736A3

公开(公告)日：2010-03-04

申请号：PCT/US2009047539

申请日：2009-06-16

Applicant: CALISOLAR INC ,  KIRSCHT FRITZ ,  ABROSIMOVA VERA ,  HEUER MATTHIAS ,  JOUINI ANIS ,  LINKE DIETER ,  KAES MARTIN ,  RAKOTONIAINA JEAN PATRICE ,  OUNADJELA KAMEL

Inventor： KIRSCHT FRITZ ,  ABROSIMOVA VERA ,  HEUER MATTHIAS ,  JOUINI ANIS ,  LINKE DIETER ,  KAES MARTIN ,  RAKOTONIAINA JEAN PATRICE ,  OUNADJELA KAMEL

IPC: H01L31/00

CPC classification number: C30B29/06 ,  C30B11/00 ,  C30B11/04 ,  C30B11/08 ,  C30B13/00 ,  C30B13/08 ,  C30B13/10 ,  C30B15/00 ,  C30B15/02 ,  C30B15/04 ,  C30B29/52 ,  H01L31/028 ,  Y02E10/547 ,  Y10T117/1024 ,  Y10T117/1068

Abstract: Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. Common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, mainly increased material strength. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells. A silicon material with a germanium concentration in the range (50-200) ppmw demonstrates an increased material strength, where best practical ranges depend on the material quality generated.

Abstract translation: 描述了使用各种等级的硅原料形成硅锭和晶体的技术。 共同的特征是向熔体添加预定量的锗，并执行结晶以将锗掺入相应晶体硅材料的硅晶格中。 这种掺入的锗导致各个硅材料特性的改进，主要是材料强度的增加。 这导致在太阳能电池制造中应用这些材料以及从这些太阳能电池制造模块时产生积极效果。 锗浓度在（50-200）ppmw范围内的硅材料表现出增加的材料强度，其中最佳实际范围取决于所产生的材料质量。