公开(公告)号：WO2011056200A3

公开(公告)日：2011-08-11

申请号：PCT/US2010002844

申请日：2010-10-27

Applicant: CALISOLAR INC ,  PHAN BILL ,  ZHANG RENHUA ,  GORMAN JOHN ,  SIDELKHEIR OMAR ,  RAKOTONIAINA JEAN PATRICE ,  BLOSSE ALAIN PAUL ,  KAES MARTIN

Inventor： PHAN BILL ,  ZHANG RENHUA ,  GORMAN JOHN ,  SIDELKHEIR OMAR ,  RAKOTONIAINA JEAN PATRICE ,  BLOSSE ALAIN PAUL ,  KAES MARTIN

IPC: H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/02167 ,  H01L31/02168 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

Abstract: A polarization resistant solar cell using an oxygen-rich interface layer (209) is provided. The oxygen-rich interface layer may be comprised of SiOxNy, which may have a graded profile that varies between oxygen-rich proximate to the solar cell to nitrogen-rich distal to the solar cell. A silicon oxide passivation layer (601) may be interposed between the solar cell and the SiOxNy graded dielectric layer. The graded SiOxNy dielectric layer may be replaced with a non-graded SiOxNy dielectric layer and a SiN AR coating (703).

Abstract translation: 提供了使用富氧界面层（209）的耐极化太阳能电池。 富氧界面层可以由SiO x N y组成，其可以具有在太阳能电池附近的富含氧和太阳能电池远端富氮之间变化的分级分布。 氧化硅钝化层（601）可以介于太阳能电池和SiO x N y梯度电介质层之间。 分级的SiO x N y介电层可以用非梯度的SiO x N y介电层和SiN-AR涂层（703）代替。

公开(公告)号：WO2011056201A3

公开(公告)日：2011-05-12

申请号：PCT/US2010/002845

申请日：2010-10-27

Applicant: CALISOLAR, INC. ,  PHAN, Bill ,  ZHANG, Renhua ,  GORMAN, John ,  SIDELKHEIR, Omar ,  BLOSSE, Alain, Paul ,  KAES, Martin

Inventor： PHAN, Bill ,  ZHANG, Renhua ,  GORMAN, John ,  SIDELKHEIR, Omar ,  BLOSSE, Alain, Paul ,  KAES, Martin

IPC: H01L31/0216 ,  H01L31/18

Abstract: A polarization resistant solar cell is provided. The solar cell (200) uses a dual layer dielectric stack disposed on the front surface of the cell. The dielectric stack consists of a passivation layer (209) disposed directly on the front cell surface and comprised of either SiO x or SiON, and an outer AR coating (211) comprised of SiCN.

公开(公告)号：WO2011056200A2

公开(公告)日：2011-05-12

申请号：PCT/US2010/002844

申请日：2010-10-27

Applicant: CALISOLAR, INC. ,  PHAN, Bill ,  ZHANG, Renhua ,  GORMAN, John ,  SIDELKHEIR, Omar ,  RAKOTONIAINA, Jean Patrice ,  BLOSSE, Alain Paul ,  KAES, Martin

Inventor： PHAN, Bill ,  ZHANG, Renhua ,  GORMAN, John ,  SIDELKHEIR, Omar ,  RAKOTONIAINA, Jean Patrice ,  BLOSSE, Alain Paul ,  KAES, Martin

IPC: H01L31/0216

CPC classification number: H01L31/02167 ,  H01L31/02168 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

Abstract: A polarization resistant solar cell using an oxygen-rich interface layer is provided. The oxygen-rich interface layer may be comprised of SiO x N y , which may have a graded profile that varies between oxygen-rich proximate to the solar cell to nitrogen-rich distal to the solar cell. A silicon oxide passivation layer may be interposed between the solar cell and the SiO x N y graded dielectric layer. The graded SiO x N y dielectric layer may be replaced with a non-graded SiO x N y dielectric layer and a SiN AR coating.

Abstract translation: 提供了使用富氧界面层的耐极化太阳能电池。 富氧界面层可以由SiO x N y组成，其可以具有在太阳能电池附近的富含氧和太阳能电池远端富氮之间变化的分级分布。 氧化硅钝化层可以介于太阳能电池和SiO x N y梯度电介质层之间。 分级的SiO x N y介电层可以用非梯度的SiO x N y电介质层和SiN-AR涂层代替。

公开(公告)号：WO2010126570A3

公开(公告)日：2011-02-03

申请号：PCT/US2010001173

申请日：2010-04-19

Applicant: CALISOLAR INC ,  KAES MARTIN ,  BORDEN PETER ,  OUNADJELA KAMEL ,  KRAENZL ANDREAS ,  BLOSSE ALAIN ,  KIRSCHT FRITZ G

Inventor： KAES MARTIN ,  BORDEN PETER ,  OUNADJELA KAMEL ,  KRAENZL ANDREAS ,  BLOSSE ALAIN ,  KIRSCHT FRITZ G

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/18 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/0684 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes an active region (107) located on the front surface of the substrate (101), formed for example by a phosphorous diffusion step. The back surface includes a doped region (103), the doped region having the same conductivity as the substrate but with a higher doping level. Contact grids (111/113) are formed, for example by screen printing. Front junction isolation is accomplished using a laser scribe.

Abstract translation: 提供了简化的制造工艺和所得的双面太阳能电池（BSC），简化的制造工艺降低了制造成本。 BSC包括位于基板（101）的前表面上的有源区（107），例如通过磷扩散步骤形成。 背面包括掺杂区域（103），该掺杂区域具有与衬底相同的导电性但具有较高的掺杂水平。 形成接触网格（111/113），例如通过丝网印刷。 使用激光划片实现前结隔离。

公开(公告)号：WO2010126572A2

公开(公告)日：2010-11-04

申请号：PCT/US2010/001175

申请日：2010-04-19

Applicant: CALISOLAR, INC. ,  KAES, Martin ,  BORDEN, Peter ,  OUNADJELA, Kamel ,  KRAENZL, Andreas ,  BLOSSE, Alain ,  KIRSCHT, Fritz, G.

Inventor： KAES, Martin ,  BORDEN, Peter ,  OUNADJELA, Kamel ,  KRAENZL, Andreas ,  BLOSSE, Alain ,  KIRSCHT, Fritz, G.

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/18 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/0684 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes a back surface contact grid (113) and an overlaid blanket metal reflector (117). A doped amorphous silicon layer is interposed between the contact grid and the blanket layer.

Abstract translation: 提供了简化的制造工艺和所得的双面太阳能电池（BSC），简化的制造工艺降低了制造成本。 BSC包括背面接触网格（113）和覆盖的橡皮布金属反射器（117）。 掺杂的非晶硅层介于接触网格和覆盖层之间。

公开(公告)号：WO2010126571A3

公开(公告)日：2010-11-04

申请号：PCT/US2010/001174

申请日：2010-04-19

Applicant: CALISOLAR, INC. ,  KAES, Martin ,  BORDEN, Peter ,  OUNADJELA, Kamel ,  KRAENZL, Andreas ,  BLOSSE, Alain ,  KIRSCHT, Fritz G.

Inventor： KAES, Martin ,  BORDEN, Peter ,  OUNADJELA, Kamel ,  KRAENZL, Andreas ,  BLOSSE, Alain ,  KIRSCHT, Fritz G.

IPC: H01L31/042 ,  H01L31/18

Abstract: A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes an active region (103) located on the front surface of the substrate (101), formed for example by a phosphorous diffusion step. After removing the PSG, assuming phosphorous diffusion, and isolating the front junction, dielectric layers (105/107) are deposited on the front and back surfaces. Contact grids (109/111) are formed, for example by screen printing. Prior to depositing the back surface dielectric, a metal grid may be applied to the back surface, the back surface contact grid registered to, and alloyed to, the metal grid during contact firing.

公开(公告)号：WO2009114446A2

公开(公告)日：2009-09-17

申请号：PCT/US2009036469

申请日：2009-03-09

Applicant: CALISOLAR INC ,  OUNADJELA KAMEL ,  RAKOTONIAINA JEAN PATRICE ,  KAES MARTIN ,  ZICKERMANN DIRK ,  BLOSSE ALAIN ,  ZERGA ABDELLATIF ,  HEUER MATTHIAS ,  KIRSCHT FRITZ

Inventor： OUNADJELA KAMEL ,  RAKOTONIAINA JEAN PATRICE ,  KAES MARTIN ,  ZICKERMANN DIRK ,  BLOSSE ALAIN ,  ZERGA ABDELLATIF ,  HEUER MATTHIAS ,  KIRSCHT FRITZ

IPC: H01L31/00 ,  H01L31/042

CPC classification number: C23C18/1692 ,  C23C18/1603 ,  C23C18/1605 ,  C23C18/1653 ,  C23C18/32 ,  C25D7/12 ,  H01L31/02168 ,  H01L31/02245 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Formation of a solar cell device from upgraded metallurgical grade silicon which has received at least one defect engineering process and including a low contact resistance electrical path. An anti- reflective coating is formed on an emitter layer and back contacts are formed on a back surface of the bulk silicon substrate. This photovoltaic device may be fired to form back surface field temperatures sufficiently low to avoid reversal of previous defect engineering processes. The process further forms openings in the anti-reflective coating and a low contact resistance metal layer, such as nickel layer, over the openings in the coating. The process may anneal the low contact resistance metal layer to form n- doped portion and complete an electrically conduct path to the n-doped layer. This low temperature metallization (e.g.,

Abstract translation: 从升级的冶金级硅形成太阳能电池装置，其已经接收了至少一个缺陷工程过程并且包括低接触电阻的电路径。 在发射极层上形成抗反射涂层，在体硅衬底的后表面上形成背面触点。 该光伏器件可以被烧制以形成足够低的背表面场温度，以避免先前的缺陷工程过程的逆转。 该方法在涂层的开口上进一步形成抗反射涂层中的开口和低接触电阻金属层，例如镍层。 该工艺可以使低接触电阻金属层退火以形成n掺杂部分并且完成到n掺杂层的导电路径。 这种低温金属化（例如，<700℃）支持使用UMG硅用于太阳能装置形成，而不会改变早期的缺陷工程过程。

公开(公告)号：WO2004095525A3

公开(公告)日：2005-02-03

申请号：PCT/US2004003441

申请日：2004-02-04

Applicant: CYPRESS SEMICONDUCTOR CORP ,  BLOSSE ALAIN ,  RAMKUMAR KRISHNASWAMY ,  GOPALAN PRABHURAM

Inventor： BLOSSE ALAIN ,  RAMKUMAR KRISHNASWAMY ,  GOPALAN PRABHURAM

IPC: H01L21/28 ,  H01L21/324 ,  H01L29/49 ,  H01L29/78 ,  H01L21/44 ,  H01L21/336 ,  H01L29/76

CPC classification number: H01L29/4941 ,  H01L21/28052 ,  H01L21/324 ,  H01L21/3247 ,  H01L29/78

Abstract: In one embodiment, a gate of a transistor is formed by performing a first thermal treatment on a silicon layer (112'), forming a metal stack (110') over the silicon layer (112'), and performing a second thermal treatment on the metal stack. The first thermal treatment may be a rapid thermal annealing step, while the second thermal treatment may be a rapid thermal nitridation step. The resulting gate exhibits relatively low interface contact resistance between the silicon layer and the metal stack, and may thus be advantageously employed in high-speed devices.

Abstract translation: 在一个实施例中，通过对硅层（112'）进行第一热处理，在硅层（112'）上形成金属堆叠（110'），并对第一热处理 金属堆叠。 第一热处理可以是快速热退火步骤，而第二热处理可以是快速热氮化步骤。 所得到的栅极在硅层和金属堆叠之间表现出相对较低的界面接触电阻，因此可有利地用于高速器件中。

公开(公告)号：WO2011056201A2

公开(公告)日：2011-05-12

申请号：PCT/US2010002845

申请日：2010-10-27

Applicant: CALISOLAR INC ,  PHAN BILL ,  ZHANG RENHUA ,  GORMAN JOHN ,  SIDELKHEIR OMAR ,  BLOSSE ALAIN PAUL ,  KAES MARTIN

Inventor： PHAN BILL ,  ZHANG RENHUA ,  GORMAN JOHN ,  SIDELKHEIR OMAR ,  BLOSSE ALAIN PAUL ,  KAES MARTIN

IPC: H01L31/0216

CPC classification number: H01L31/02167 ,  H01L31/02168 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

Abstract: A polarization resistant solar cell is provided. The solar cell uses a dual layer dielectric stack disposed on the front surface of the cell. The dielectric stack consists of a passivation layer disposed directly on the front cell surface and comprised of either SiOx or SiON, and an outer AR coating comprised of SiCN.

Abstract translation: 提供了一种耐极化的太阳能电池。 太阳能电池使用设置在电池前表面上的双层电介质叠层。 电介质堆叠由直接设置在前电池表面上并由SiO x或SiON构成的钝化层和由SiCN组成的外部AR涂层组成。

公开(公告)号：WO2010126572A3

公开(公告)日：2011-01-27

申请号：PCT/US2010001175

申请日：2010-04-19

Applicant: CALISOLAR INC ,  KAES MARTIN ,  BORDEN PETER ,  OUNADJELA KAMEL ,  KRAENZL ANDREAS ,  BLOSSE ALAIN ,  KIRSCHT FRITZ G

Inventor： KAES MARTIN ,  BORDEN PETER ,  OUNADJELA KAMEL ,  KRAENZL ANDREAS ,  BLOSSE ALAIN ,  KIRSCHT FRITZ G

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/18 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/0684 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes a back surface contact grid (113) and an overlaid blanket metal reflector (117). A doped amorphous silicon layer is interposed between the contact grid and the blanket layer.

Abstract translation: 提供了简化的制造工艺和所得的双面太阳能电池（BSC），简化的制造工艺降低了制造成本。 BSC包括背面接触网格（113）和覆盖的橡皮布金属反射器（117）。 掺杂的非晶硅层介于接触网格和覆盖层之间。