公开(公告)号：WO2010011113A3

公开(公告)日：2010-05-06

申请号：PCT/KR2009004160

申请日：2009-07-27

Applicant: KOMICO LTD ,  CHEORWON PLASMA RES INST ,  HWANG CHUL-HO ,  CHANG JAE-HOON ,  SEO JUN-HO ,  KIM HYUNG-IN

Inventor： HWANG CHUL-HO ,  CHANG JAE-HOON ,  SEO JUN-HO ,  KIM HYUNG-IN

IPC: C23C24/04

CPC classification number: C23C28/042 ,  C23C30/00 ,  H01J37/32477

Abstract: Disclosed is a ceramic coating with improved plasma resistance applied to a plasma processing apparatus. The ceramic coating is formed on a substance applied to a plasma processing apparatus and on the surface of the substance. In addition, the ceramic coating has 13-25 nm/min of a corrosion rate for the plasma formed at 800W power and includes a ceramic coating film with 0.1-1% porosity. Accordingly, surface damage of the ceramic coating, as configured above, can be reduced even if it is exposed to plasma for lengthy periods.

Abstract translation: 公开了一种应用于等离子体处理设备的具有改善的等离子体阻抗的陶瓷涂层。 陶瓷涂层形成在施加到等离子体处理装置的物质上和物质的表面上。 此外，陶瓷涂层对于以800W功率形成的等离子体具有13-25nm / min的腐蚀速率，并且包括具有0.1-1％孔隙率的陶瓷涂层膜。 因此，即使长时间暴露于等离子体，如上所述的陶瓷涂层的表面损伤也可以减小。

公开(公告)号：WO2009091214A3

公开(公告)日：2009-09-11

申请号：PCT/KR2009000247

申请日：2009-01-16

Applicant: KOMICO LTD ,  LEE BUM-SUL ,  CHAE JE-HO ,  LEE SEONG-MIN

Inventor： LEE BUM-SUL ,  CHAE JE-HO ,  LEE SEONG-MIN

IPC: H01L21/205

CPC classification number: H01L21/67103 ,  C23C16/4586

Abstract: A substrate-supporting device comprises: an upper plate for supporting a substrate; a lower plate positioned underneath the upper plate; an insulating member interposed between the upper plate and the lower plate; an electrode which is interposed between the upper plate and the insulating member, and which is for concentrating plasma onto a substrate which is placed on the upper plate; and a heater which is interposed between the insulating member and the lower plate, and which heats the substrate which is supported by means of the upper plate. Here, the insulating member comprises a material which has a volume resistance of at least 106 O cm at a temperature of from 400°C to 800°C such that it reduces leakage current between the heater and the electrode.

Abstract translation: 基板支撑装置包括：用于支撑基板的上板; 位于上板下方的下板; 插入在所述上板和所述下板之间的绝缘构件; 介于上板和绝缘构件之间的电极，用于将等离子体集中在放置在上板上的基板上; 以及加热器，其插入在所述绝缘构件和所述下板之间，并且加热由所述上板支撑的所述基板。 这里，绝缘构件包括在400℃至800℃的温度下具有至少106Ωcm的体积电阻的材料，从而减小加热器和电极之间的漏电流。

公开(公告)号：WO2008108604A1

公开(公告)日：2008-09-12

申请号：PCT/KR2008/001326

申请日：2008-03-07

Applicant: SOSUL CO., LTD. ,  KOMICO LTD. ,  KIM, Geun-Ho ,  LEE, Jung-Hee ,  JEON, Seon-Kyu ,  LEE, Hee-Se ,  RHA, Kwan-Goo ,  CHUNG, Seng-Hyun

Inventor： KIM, Geun-Ho ,  LEE, Jung-Hee ,  JEON, Seon-Kyu ,  LEE, Hee-Se ,  RHA, Kwan-Goo ,  CHUNG, Seng-Hyun

IPC: H01L21/205 ,  H01L21/68

CPC classification number: H01L21/67069 ,  H01L21/67213

Abstract: In an apparatus for treating substrates, a primary process chamber, a peripheral etching chamber and a rear etching chamber are arranged around a transfer chamber, and a primary process, a peripheral etching process and a rear etching process are performed under a vacuum state in a single system. The peripheral and the rear etching processes are performed in the same space without atmospheric exposure of the substrate. Accordingly, the process time of the primary process, the peripheral and the rear etching processes may be remarkably reduced, to thereby improve the manufacturing efficiency of a semiconductor device.

Abstract translation: 在处理基板的装置中，在处理室周围配置有一次处理室，周边蚀刻室和后蚀刻室，在真空状态下进行一次处理，周边蚀刻处理和后蚀刻处理 单系统。 外围和后蚀刻工艺在相同的空间中进行，而不会大量暴露于基板。 因此，可以显着降低初级工艺，外围和后蚀刻工艺的处理时间，从而提高半导体器件的制造效率。

公开(公告)号：WO2012011703A3

公开(公告)日：2012-03-29

申请号：PCT/KR2011005260

申请日：2011-07-18

Applicant: KOMICO LTD ,  CHOI JEONG-DUCK ,  YUK HYUN-MI ,  CHOI JIN-SIK ,  PARK CHANG-HYUN

Inventor： CHOI JEONG-DUCK ,  YUK HYUN-MI ,  CHOI JIN-SIK ,  PARK CHANG-HYUN

IPC: H01H59/00 ,  B81B3/00

CPC classification number: H01H59/0009 ,  B81B3/007 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/019

Abstract: According to the MEMS switch and the method for manufacturing same of the present invention, the MEMS switch includes a substrate, a first terminal formed on the substrate, a second terminal formed on the substrate and being spaced a predetermined interval from the first terminal, a conductive support formed on the second terminal, a conductive driving beam connected to the support in a cantilever form and extending parallel to the substrate to allow one end thereof to be disposed above the first terminal and to contact the first terminal when same is bent by an externally applied impact. Accordingly, a micro-sized switch may be manufactured and stable operation of the switch is possible.

Abstract translation: 根据本发明的MEMS开关及其制造方法，MEMS开关包括基板，形成在基板上的第一端子，形成在基板上并与第一端子隔开规定间隔的第二端子， 形成在所述第二端子上的导电支撑件，导电驱动梁，其以悬臂形式连接到所述支撑件并且平行于所述基板延伸，以允许其一端设置在所述第一端子上方并且当其相对于所述第一端子弯曲时与所述第一端子接触 外部施加冲击。 因此，可以制造微型开关，并且开关的稳定操作是可能的。

公开(公告)号：WO2010101423A3

公开(公告)日：2010-11-25

申请号：PCT/KR2010001349

申请日：2010-03-04

Applicant: KOMICO LTD ,  CHOI MYONG-HO ,  PARK JIN-SUNG ,  PARK JIN-CHUL ,  JANG JI-SUK

Inventor： CHOI MYONG-HO ,  PARK JIN-SUNG ,  PARK JIN-CHUL ,  JANG JI-SUK

IPC: H01L21/687 ,  H01L21/683

CPC classification number: H01L21/68742

Abstract: A lift pin comprises a main body and a support unit, wherein said main body is inserted into a through-hole of a susceptor on which a wafer is disposed, such that the main body is vertically movable, and wherein said support unit is coupled to the upper surface of the main body to support the wafer, and made of a material having a hardness lower than that of the wafer to protect the surface of the wafer from scratches.

Abstract translation: 提升销包括主体和支撑单元，其中所述主体插入到其上设置有晶片的基座的通孔中，使得主体可垂直移动，并且其中所述支撑单元联接到 主体的上表面以支撑晶片，并且由具有低于晶片硬度的材料制成，以保护晶片的表面免受划伤。

公开(公告)号：WO2010011114A3

公开(公告)日：2010-05-14

申请号：PCT/KR2009004163

申请日：2009-07-27

Applicant: KOMICO LTD ,  CHEORWON PLASMA RES INST ,  KIM HYUNG-IN ,  SEO JUN-HO ,  HWANG CHUL-HO ,  CHANG JAE-HOON

Inventor： KIM HYUNG-IN ,  SEO JUN-HO ,  HWANG CHUL-HO ,  CHANG JAE-HOON

IPC: H01L21/205

CPC classification number: C23C24/04

Abstract: An apparatus for forming a ceramic coating film with improved plasma resistance comprises a ceramic powder supply unit, a unit for dispensing a fixed amount of ceramic powder, a dispersion unit, and an ejection unit. The ceramic powder supply unit contains ceramic powder. The unit for dispensing a fixed amount of ceramic powder forms uniformly aggregated ceramic powder. The dispersion unit forms aerosol by pulverizing and dispersing the aggregated ceramic powder. The ejection unit forms a ceramic coating film with porosity of 1% or less on the surface of a substance by ejecting the aerosol onto the substance at high speed.

Abstract translation: 用于形成具有改善的等离子体电阻的陶瓷涂膜的设备包括陶瓷粉末供应单元，用于分配固定量的陶瓷粉末的单元，分散单元和喷射单元。 陶瓷粉末供应单元含有陶瓷粉末。 用于分配固定量的陶瓷粉末的单元形成均匀聚集的陶瓷粉末。 分散单元通过粉碎和分散聚集的陶瓷粉末形成气溶胶。 喷射单元通过将气溶胶高速喷射到物质上，在物质表面上形成孔隙率为1％以下的陶瓷涂膜。

公开(公告)号：WO2009078516A1

公开(公告)日：2009-06-25

申请号：PCT/KR2008/003239

申请日：2008-06-11

Applicant: KOMICO LTD. ,  JANG, Kyung-Ic ,  YE, Kyung-Hwan ,  RYU, Chung-Ryoul ,  KIM, Sam-Woong

Inventor： JANG, Kyung-Ic ,  YE, Kyung-Hwan ,  RYU, Chung-Ryoul ,  KIM, Sam-Woong

IPC: C09D1/00

CPC classification number: C09D1/00 ,  C23C4/11

Abstract: In a spray-coated body and apparatus and method of forming a spray-coating layer, the spray- coating layer is positioned on a surface of a object body and has a volume resistivity in a range of about 10 10 Ω-cm to about 10 14 Ω-cm. Accordingly, the spray-coating layer has an optimized volume resistivity and the chemical or plasma damage to the spray-coating layer may be minimized in the spray coating process, to thereby improve the characteristics of the spray- coating layer and the reliability of the spray coating process.

Abstract translation: 在喷涂体中，形成喷涂层的装置和方法中，喷涂层位于物体的表面上，体积电阻率范围为约1010O-cm至约1014O -厘米。 因此，喷涂层具有优化的体积电阻率，并且在喷涂过程中可以使喷涂层的化学或等离子体损伤最小化，从而改善喷涂层的特性和喷涂的可靠性 涂层工艺。

公开(公告)号：WO2013012210A3

公开(公告)日：2013-03-14

申请号：PCT/KR2012005570

申请日：2012-07-13

Applicant: KOMICO LTD ,  YOON SUNG-HEE ,  JUNG KWON-HO ,  KIM HO-SOOK ,  KIM SE-RYOUNG

Inventor： YOON SUNG-HEE ,  JUNG KWON-HO ,  KIM HO-SOOK ,  KIM SE-RYOUNG

IPC: H01L21/683 ,  C23C16/458 ,  H01L21/205 ,  H01L21/673 ,  H01L31/18

CPC classification number: H01L21/67333 ,  H01L31/1876 ,  Y02E10/50 ,  Y02P70/521

Abstract: According to the present invention, a tray for loading substrates may comprise: a main body; and a guide unit. The main body may have a flat-plate structure having a first surface on which substrates are loaded, and may be made of a carbon-carbon composite material. The guide unit may guide the substrates onto the main body such that the substrates can each be loaded into predetermined locations. When thin films are formed on substrates for solar cells, the tray for loading the substrates may not only stably maintain physical properties even in a high-temperature process under a plasma atmosphere but also may be implemented into a large area capable of loading a much greater number of substrates.

Abstract translation: 根据本发明，用于装载基板的托盘可以包括：主体; 和导向单元。 主体可以具有平板结构，该平板结构具有第一表面，在其上装载基板，并且可以由碳 - 碳复合材料制成。 引导单元可以将基板引导到主体上，使得每个基板可以被装载到预定位置。 当在用于太阳能电池的基板上形成薄膜时，用于装载基板的托盘不仅可以在等离子体气氛下的高温工艺中稳定地保持物理性能，而且还可以实现在能够加载大得多的大面积 基板数量

公开(公告)号：WO2011152620A3

公开(公告)日：2012-04-19

申请号：PCT/KR2011003625

申请日：2011-05-17

Applicant: KOMICO LTD ,  CHO SANG-BUM ,  CHOI MYONG-HO ,  CHOI JIN-SIK

Inventor： CHO SANG-BUM ,  CHOI MYONG-HO ,  CHOI JIN-SIK

IPC: H01L21/68 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/6833

Abstract: An electrostatic chuck comprises an electrostatic layer and a heat-emitting layer. The electrostatic layer has disposed therein an electrostatic electrode which generates an electrostatic force for securing a substrate placed thereon, while also having a first heat transfer coefficient. The heat-emitting layer is disposed underneath the electrostatic layer and has disposed therein a heat-emitting electrode for heating the substrate, while also having a second heat transfer coefficient higher than the first heat transfer coefficient.

Abstract translation: 静电卡盘包括静电层和发热层。 静电层在其中设置有静电电极，其产生用于固定其上放置的基板的静电力，同时还具有第一传热系数。 发热层设置在静电层下方，并且在其中设置有用于加热基板的发热电极，同时还具有高于第一传热系数的第二传热系数。

公开(公告)号：WO2010030102A3

公开(公告)日：2010-07-01

申请号：PCT/KR2009005070

申请日：2009-09-08

Applicant: KOMICO LTD ,  CHOI JIN-SIK ,  CHOI JEONG-DUCK

Inventor： CHOI JIN-SIK ,  CHOI JEONG-DUCK

IPC: H01L21/02

CPC classification number: H01L21/6833 ,  H02N13/00

Abstract: Disclosed is an electrostatic chuck comprising a buffer layer to absorb thermal stress. The electrostatic chuck comprises: a main body having transverse holes; a base plate disposed on the upper side of said main body and including insertion holes corresponding to said transverse holes, and an electrode layer partially exposed through said insertion holes, to secure an object to be held by the electrostatic energy of said electrode layer; a terminal unit having a contact terminal connected to said electrode layer through said transverse holes and said insertion holes; and a buffer layer disposed at at least one boundary between said contact terminal, said main body, and said base plate so as to be able to absorb thermal stress from said main body. According to the present invention, the buffer layer of the electrostatic chuck absorbs thermal stress, thereby minimising cracks due to thermal stress and extending the life of the chuck.

Abstract translation: 公开了一种静电吸盘，其包括缓冲层以吸收热应力。 该静电吸盘包括：具有横向孔的主体; 设置在所述主体的上侧并包括与所述横向孔相对应的插入孔的基板和通过所述插入孔部分地暴露的电极层，以确保被所述电极层的静电能保持的物体; 端子单元，具有通过所述横向孔和所述插入孔连接到所述电极层的接触端子; 以及设置在所述接触端子，所述主体和所述基板之间的至少一个边界处的缓冲层，以便能够吸收来自所述主体的热应力。 根据本发明，静电卡盘的缓冲层吸收热应力，由此使热应力引起的裂纹最小化并延长卡盘的寿命。