公开(公告)号：WO2010064829A3

公开(公告)日：2010-08-26

申请号：PCT/KR2009007120

申请日：2009-12-01

Applicant: CHEIL IND INC ,  YOON KYONG-HO ,  LEE JIN-KUK ,  CHEON HWAN-SUNG ,  KIM MIN-SOO ,  SONG JEE-YUN

Inventor： YOON KYONG-HO ,  LEE JIN-KUK ,  CHEON HWAN-SUNG ,  KIM MIN-SOO ,  SONG JEE-YUN

IPC: C08G61/02 ,  C08G61/00 ,  C08L65/00 ,  G03F7/004

CPC classification number: C08L65/00 ,  C08G61/02 ,  C08G73/1039 ,  C08G73/1067 ,  C08G2261/3424 ,  C08L79/08 ,  G03F7/091 ,  G03F7/094

Abstract: The present invention relates to an underlayer composition having anti-reflective properties useful in a lithographic process. The composition according to the present invention has highly outstanding optical and mechanical characteristics and a high etching selectivity ratio, while at the same time having the feature that coating can be carried out using the spin-on coating technique. Advantageously, the composition of the present invention is used in relatively short wavelength lithography and has a minimal residual acid content.

Abstract translation: 本发明涉及具有在光刻工艺中有用的抗反射特性的底层组合物。 根据本发明的组合物具有非常优异的光学和机械特性以及高蚀刻选择比，同时具有使用旋涂技术可以进行涂布的特征。 有利地，本发明的组合物用于相对较短的波长光刻并且具有最小的残留酸含量。

公开(公告)号：WO2008120855A1

公开(公告)日：2008-10-09

申请号：PCT/KR2007/007058

申请日：2007-12-31

Applicant: CHEIL INDUSTRIES INC. ,  KIM, Min Soo ,  UH, Dong Seon ,  OH, Chang Il ,  YOON, Kyong Ho ,  HYUNG, Kyung Hee ,  LEE, Jin Kuk ,  KIM, Jong Seob ,  CHEON, Hwan Sung ,  NAM, Irina ,  TOKAREVA, Nataliya

Inventor： KIM, Min Soo ,  UH, Dong Seon ,  OH, Chang Il ,  YOON, Kyong Ho ,  HYUNG, Kyung Hee ,  LEE, Jin Kuk ,  KIM, Jong Seob ,  CHEON, Hwan Sung ,  NAM, Irina ,  TOKAREVA, Nataliya

IPC: C08G61/12

CPC classification number: G03F7/091

Abstract: A hardmask composition having antireflective properties is provided. The hardmask composition is suitable for lithography, provides excellent optical and mechanical properties, and exhibits high etch selectivity. In addition, the hardmask composition can be readily applied by spin-on application techniques. Advantageously, the hardmask composition is useful for short- wavelength lithography and has a minimum residual acid content.

Abstract translation: 提供具有抗反射性能的硬掩模组合物。 硬掩模组合物适用于光刻，提供优异的光学和机械性能，并且表现出高的蚀刻选择性。 此外，硬掩模组合物可以通过旋涂应用技术容易地应用。 有利地，硬掩模组合物可用于短波长光刻并且具有最小的残留酸含量。

公开(公告)号：WO2008082241A1

公开(公告)日：2008-07-10

申请号：PCT/KR2007/007041

申请日：2007-12-31

Applicant: CHEIL INDUSTRIES INC. ,  YOON, Kyong Ho ,  KIM, Jong Seob ,  UH, Dong Seon ,  OH, Chang Il ,  HYUNG, Kyung Hee ,  KIM, Min Soo ,  LEE, Jin Kuk

Inventor： YOON, Kyong Ho ,  KIM, Jong Seob ,  UH, Dong Seon ,  OH, Chang Il ,  HYUNG, Kyung Hee ,  KIM, Min Soo ,  LEE, Jin Kuk

IPC: C08G61/10

CPC classification number: G03F7/091 ,  C08G61/02 ,  C08G61/10 ,  G03F7/11 ,  Y10S438/952

Abstract: An antireflective hardmask composition is provided. The hardmask composition includes an organic solvent, an initiator, and at least one polymer represented by Formulae A, B, or C, which are described in the specification.

Abstract translation: 提供了一种抗反射硬掩模组​​合物。 硬掩模组合物包括有机溶剂，引发剂和至少一种由式A，B或C表示的聚合物，其在说明书中描述。

公开(公告)号：WO2008082236A1

公开(公告)日：2008-07-10

申请号：PCT/KR2007/007025

申请日：2007-12-31

Applicant: CHEIL INDUSTRIES INC. ,  YOON, Kyong Ho ,  KIM, Jong Seob ,  UH, Dong Seon ,  OH, Chang Il ,  HYUNG, Kyung Hee ,  KIM, Min Soo ,  LEE, Jin Kuk

Inventor： YOON, Kyong Ho ,  KIM, Jong Seob ,  UH, Dong Seon ,  OH, Chang Il ,  HYUNG, Kyung Hee ,  KIM, Min Soo ,  LEE, Jin Kuk

IPC: C08G61/10

CPC classification number: G02B1/111 ,  C08G10/02 ,  C08G61/02 ,  G03F7/091

Abstract: A naphthalene-backbone polymer having antireflective properties is provided. The polymer is represented by Formula 1, which is described in the specification.

Abstract translation: 提供了具有抗反射性能的萘骨架聚合物。 聚合物由说明书中描述的式1表示。

公开(公告)号：WO2007105859A1

公开(公告)日：2007-09-20

申请号：PCT/KR2007/000003

申请日：2007-01-15

Applicant: CHEIL INDUSTRIES INC. ,  YOON, Hui Chan ,  KIM, Sang Kyun ,  LIM, Sang Hak ,  UH, Dong Sun ,  KIM, Jong Seob ,  LEE, Jin Kuk ,  OH, Chang Il ,  KIM, Min Soo ,  YOON, Kyong Ho ,  NAM, Irina

Inventor： YOON, Hui Chan ,  KIM, Sang Kyun ,  LIM, Sang Hak ,  UH, Dong Sun ,  KIM, Jong Seob ,  LEE, Jin Kuk ,  OH, Chang Il ,  KIM, Min Soo ,  YOON, Kyong Ho ,  NAM, Irina

IPC: C08G77/00 ,  C08G77/02 ,  C08G77/08 ,  C08G77/06

CPC classification number: H01L21/31144 ,  C08G77/20 ,  G03F7/0752 ,  G03F7/091 ,  H01L21/3121

Abstract: Provided herein, according to some embodiments of the invention, are organosilane polymers prepared by reacting organosilane compounds including (a) at least one compound of Formula (I) Si(OR 1 )(OR 2 )(OR 3 )R 4 wherein R 1 , R 2 and R 3 may each independently be an alkyl group, and R 4 may be -(CH 2 ) n R 5 , wherein R 5 may be an aryl or a substituted aryl, and n may be O or a positive integer; and (b) at least one compound of Formula (II) Si(OR 6 )(OR 7 )(OR 8 )R 9 wherein R 6 , R 7 and R 8 may each independently an alkyl group or an aryl group; and R 9 may be an alkyl group. Also provided are hardmask compositions including an organosilane compound according to an embodiment of the invention, or a hydrolysis product thereof. Methods of producing semiconductor devices using a hardmask compostion according to an embodiment of the invention, and semiconductor devices produced therefrom, are also provided.

Abstract translation: 根据本发明的一些实施方案，提供了通过使有机硅烷化合物反应制备的有机硅烷聚合物，所述有机硅烷化合物包括（a）至少一种式（I）Si（OR 1）2（OR 2） （OR 3）R 4其中R 1，R 2和R 2， R 3可以各自独立地为烷基，R 4可以是 - （CH 2）n R 5 其中R 5可以是芳基或取代的芳基，n可以是O或正整数; 和（b）至少一种式（II）的化合物Si（OR 6）（OR 7）（OR 8）（OR 8） 其中R 6，R 7和R 8可各自独立地为烷基或芳基; R 9可以是烷基。 还提供了包含根据本发明实施方案的有机硅烷化合物或其水解产物的硬掩模组合物。 还提供了使用根据本发明的实施例的硬掩模组合的半导体器件的制造方法以及由其制造的半导体器件。

公开(公告)号：WO2007035018A1

公开(公告)日：2007-03-29

申请号：PCT/KR2005/004216

申请日：2005-12-09

Applicant: CHEIL INDUSTRIES INC. ,  OH, Chang Il ,  UH, Dong Seon ,  KIM, Do Hyeon ,  LEE, Jin Kuk ,  NAM, Irina ,  YUN, Hui Chan ,  KIM, Jong Seob

Inventor： OH, Chang Il ,  UH, Dong Seon ,  KIM, Do Hyeon ,  LEE, Jin Kuk ,  NAM, Irina ,  YUN, Hui Chan ,  KIM, Jong Seob

IPC: G03F7/004

CPC classification number: G03F7/091

Abstract: Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. Antireflectivehardmask compositions of the invention include: (a) a polymer component including at least one polymer having a monomeric unit of Formula (I) described in this specification; (b) a crosslinking component; and (c) an acid catalyst.

Abstract translation: 提供了具有抗平滑印刷工艺中有用的抗反射性能的硬掩模组合物，其使用方法以及通过这些方法制造的半导体器件。 本发明的抗反射掩模组合物包括：（a）包含至少一种具有本说明书中描述的式（I）单体单元的聚合物的聚合物组分; （b）交联组分; 和（c）酸催化剂。

公开(公告)号：WO2008150058A1

公开(公告)日：2008-12-11

申请号：PCT/KR2007/007059

申请日：2007-12-31

Applicant: CHEIL INDUSTRIES INC. ,  YOON, Kyong Ho ,  KIM, Jong Seob ,  UH, Dong Seon ,  CHEON, Hwan Sung ,  OH, Chang Il ,  KIM, Min Soo ,  LEE, Jin Kuk

Inventor： YOON, Kyong Ho ,  KIM, Jong Seob ,  UH, Dong Seon ,  CHEON, Hwan Sung ,  OH, Chang Il ,  KIM, Min Soo ,  LEE, Jin Kuk

IPC: G03F7/004

CPC classification number: G03F7/091 ,  Y10S438/952

Abstract: A hardmask composition having antireflective properties is provided. The hardmask composition is suitable for lithography and provides excellent optical properties and mechanical properties. In addition, the hardmask composition can be readily applied by spin-on application techniques. Particularly, the composition is highly resistant to dry etching. Therefore, the composition can be used to provide a multilayer thin film that is capable of being patterned with a high aspect ratio. Further provided is a method for forming a pattern using the composition.

Abstract translation: 提供具有抗反射性能的硬掩模组合物。 硬掩模组合物适用于光刻，并提供优异的光学性能和机械性能。 此外，硬掩模组合物可以通过旋涂应用技术容易地应用。 特别地，组合物对干蚀刻具有高度耐受性。 因此，该组合物可用于提供能够以高纵横比进行图案化的多层薄膜。 还提供了使用该组合物形成图案的方法。

公开(公告)号：WO2007074961A1

公开(公告)日：2007-07-05

申请号：PCT/KR2006/003469

申请日：2006-09-01

Applicant: CHEIL INDUSTRIES INC. ,  UH, Dong Seon ,  OH, Chang Il ,  KIM, Do Hyeon ,  YUN, Hui Chan ,  LEE, Jin Kuk ,  NAM, Irina ,  KIM, Jong Seob

Inventor： UH, Dong Seon ,  OH, Chang Il ,  KIM, Do Hyeon ,  YUN, Hui Chan ,  LEE, Jin Kuk ,  NAM, Irina ,  KIM, Jong Seob

IPC: G03F7/004 ,  G03F7/075

CPC classification number: H01L21/0273 ,  G03F7/11

Abstract: Provided herein are hardmask compositions for resist underlayer films, wherein according to some embodiments of the invention, hardmask compositions include a polymer prepared by the reaction of a compound of Formula 1 with a compound of Formula 2 in the presence of a catalyst, whereinisa monovalent organic group, n is an integer from 3 to 20, and m is 1 or 2; and an organic solvent. Also provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the invention. Further provided are semiconductor integrated circuit devices produced by a method embodiment of the invention.

Abstract translation: 本文提供了用于抗蚀剂下层膜的硬掩模组合物，其中根据本发明的一些实施方案，硬掩模组合物包括通过式1的化合物与式2的化合物在催化剂存在下反应制备的聚合物，其中一价有机 基团，n为3〜20的整数，m为1或2; 和有机溶剂。 本文还提供了使用根据本发明实施例的硬掩模组合物制造半导体集成电路器件的方法。 还提供了通过本发明的方法实施例制造的半导体集成电路器件。

公开(公告)号：WO2008075860A1

公开(公告)日：2008-06-26

申请号：PCT/KR2007/006574

申请日：2007-12-17

Applicant: CHEIL INDUSTRIES INC. ,  OH, Chang Il ,  UH, Dong Seon ,  HYUNG, Kyung Hee ,  KIM, Min Soo ,  LEE, Jin Kuk ,  KIM, Jong Seob

Inventor： OH, Chang Il ,  UH, Dong Seon ,  HYUNG, Kyung Hee ,  KIM, Min Soo ,  LEE, Jin Kuk ,  KIM, Jong Seob

IPC: G03F7/028

CPC classification number: G03F7/091 ,  H01L21/0276

Abstract: Provided is a hardmask composition having antireflective properties that is suitable for lithography. The hardmask composition provides excellent characteristics in terms of optical properties and mechanical properties. In addition, the composition can be readily applied by spin-on application techniques. Particularly, the composition is highly resistant to dry etching. Therefore, the composition can be used to provide a multilayer thin film that is patterned with high aspect ratio. Further provided is a method for forming a pattern using the composition.

Abstract translation: 提供了具有适于光刻的抗反射性能的硬掩模组合物。 硬掩模组合物在光学性能和机械性能方面提供优异的特性。 此外，组合物可以通过旋涂施用技术容易地应用。 特别地，组合物对干蚀刻具有高度耐受性。 因此，该组合物可用于提供以高纵横比构图的多层薄膜。 还提供了使用该组合物形成图案的方法。

公开(公告)号：WO2007139268A1

公开(公告)日：2007-12-06

申请号：PCT/KR2006/005906

申请日：2006-12-29

Applicant: CHEIL INDUSTRIES INC. ,  YOON, Hui Chan ,  KIM, Sang Kyun ,  LIM, Sang Hak ,  UH, Dong Sun ,  KIM, Jong Seob ,  LEE, Jin Kuk ,  OH, Chang Il ,  KIM, Min Soo ,  HYUNG, Kyung Hee ,  NAM, Irina

Inventor： YOON, Hui Chan ,  KIM, Sang Kyun ,  LIM, Sang Hak ,  UH, Dong Sun ,  KIM, Jong Seob ,  LEE, Jin Kuk ,  OH, Chang Il ,  KIM, Min Soo ,  HYUNG, Kyung Hee ,  NAM, Irina

IPC: G03F7/004

CPC classification number: G03F7/091

Abstract: Disclosed is a hardmask composition having antireflective properties useful for a lithographic process. The hardmask composition provides excellent optical properties, superior mechanical properties and high etch selectivity. In addition, the hardmask composition can be easily applied by a spin-on coating technique. Advantageously, the hardmask composition is suitable for a short- wavelength lithographic process and has a minimum residual acid content.

Abstract translation: 公开了具有抗平滑印刷工艺有用的抗反射性能的硬掩模组合物。 硬掩模组合物提供优异的光学性能，优异的机械性能和高蚀刻选择性。 此外，硬掩模组合物可以通过旋涂技术容易地应用。 有利地，硬掩模组合物适用于短波长光刻工艺，并具有最小的残留酸含量。