公开(公告)号：WO2012097024A3

公开(公告)日：2012-07-19

申请号：PCT/US2012/020871

申请日：2012-01-11

Applicant: APPLIED MATERIALS, INC. ,  LUO, Qian ,  XU, Ye ,  GUNG, Tza-Jing ,  TANG, Xianmin

Inventor： LUO, Qian ,  XU, Ye ,  GUNG, Tza-Jing ,  TANG, Xianmin

IPC: H01L21/203

Abstract: Embodiments of the present invention generally relate to methods for physical vapor deposition processes. The methods generally include synchronizing process chamber conditions with the position of a magnetron. As the magnetron is scanned over a first area of a target, the conditions within the chamber are adjusted to a first set of predetermined process conditions. As the magnetron is subsequently scanned over a second area of the target, the conditions within the chamber are adjusted to a second set of predetermined process conditions different the first set. The target may be divided into more than two areas. By correlating the position of the magnetron with different sets of process conditions, film uniformity can be improved by reducing center-to-edge non-uniformities, such as re-sputter rates which may be higher when the magnetron is near the edge of the target.

公开(公告)号：WO2009091830A3

公开(公告)日：2009-10-15

申请号：PCT/US2009031002

申请日：2009-01-14

Applicant: APPLIED MATERIALS INC ,  LUO QIAN ,  SUNDARRAJAN ARVIND ,  CHUNG HUA ,  TANG XIANMIN ,  YU JICK M ,  NARASIMHAN MURALI K

Inventor： LUO QIAN ,  SUNDARRAJAN ARVIND ,  CHUNG HUA ,  TANG XIANMIN ,  YU JICK M ,  NARASIMHAN MURALI K

IPC: H01L21/3205 ,  H01L21/28

CPC classification number: H01L21/76873 ,  C25D5/02 ,  C25D21/12 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76877

Abstract: A method and apparatus for selectively controlling deposition rate of conductive material during an electroplating process. Dopants are predominantly incorporated into a conductive seed layer on field regions of a substrate prior to filling openings in the field regions by electroplating. A substrate is positioned in one or more processing chambers, and barrier and conductive seed layers formed. A dopant precursor is provided to the chamber and ionized, with or without voltage bias. The dopant predominantly incorporates into the conductive seed layer on the field regions. Electrical conductivity of the conductive seed layer on the field regions is reduced relative to that of the conductive seed layer in the openings, resulting in low initial deposition rate of metal on the field regions during electroplating, and little or no void formation in the metal deposited in the openings.

Abstract translation: 一种用于在电镀工艺期间选择性地控制导电材料的沉积速率的方法和设备。 在通过电镀填充场区域中的开口之前，掺杂剂主要结合到衬底场区上的导电种子层中。 衬底位于一个或多个处理室中，形成阻挡层和导电晶种层。 向腔室提供掺杂剂前体并在有或没有电压偏置的情况下离子化。 掺杂剂主要结合到场区上的导电种子层中。 场区上的导电晶种层的电导率相对于开口中的导电晶种层的电导率降低，导致在电镀期间场区上的金属的初始沉积速率低，并且沉积的金属中很少或没有空隙形成 在开幕式。

公开(公告)号：WO2009091830A2

公开(公告)日：2009-07-23

申请号：PCT/US2009/031002

申请日：2009-01-14

Applicant: APPLIED MATERIALS, INC. ,  LUO, Qian ,  SUNDARRAJAN, Arvind ,  CHUNG, Hua ,  TANG, Xianmin ,  YU, Jick M. ,  NARASIMHAN, Murali K.

Inventor： LUO, Qian ,  SUNDARRAJAN, Arvind ,  CHUNG, Hua ,  TANG, Xianmin ,  YU, Jick M. ,  NARASIMHAN, Murali K.

IPC: H01L21/3205

CPC classification number: H01L21/76873 ,  C25D5/02 ,  C25D21/12 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76877

Abstract: A method and apparatus for selectively controlling deposition rate of conductive material during an electroplating process. Dopants are predominantly incorporated into a conductive seed layer on field regions of a substrate prior to filling openings in the field regions by electroplating. A substrate is positioned in one or more processing chambers, and barrier and conductive seed layers formed. A dopant precursor is provided to the chamber and ionized, with or without voltage bias. The dopant predominantly incorporates into the conductive seed layer on the field regions. Electrical conductivity of the conductive seed layer on the field regions is reduced relative to that of the conductive seed layer in the openings, resulting in low initial deposition rate of metal on the field regions during electroplating, and little or no void formation in the metal deposited in the openings.

Abstract translation: 一种用于在电镀过程中选择性地控制导电材料的沉积速率的方法和装置。 在通过电镀在场区域中填充开口之前，掺杂剂主要被结合到衬底的场区域上的导电种子层中。 衬底被定位在一个或多个处理室中，形成阻挡层和导电种子层。 在室内提供掺杂剂前体，并且在电压偏置或没有电压偏置的情况下电离。 掺杂剂主要并入到场区域上的导电种子层中。 导电种子层在场区域的电导率相对于开口中的导电种子层的导电率降低，导致电镀期间金属在场区域上的初始沉积速率较低，并且在沉积的金属中很少或没有空隙形成 在开口。

公开(公告)号：WO2012097024A2

公开(公告)日：2012-07-19

申请号：PCT/US2012020871

申请日：2012-01-11

Applicant: APPLIED MATERIALS INC ,  LUO QIAN ,  XU YE ,  GUNG TZA-JING ,  TANG XIANMIN

Inventor： LUO QIAN ,  XU YE ,  GUNG TZA-JING ,  TANG XIANMIN

IPC: H01L21/203

CPC classification number: C23C14/345 ,  C23C14/3492 ,  C23C14/35 ,  H01J37/3455

Abstract: Embodiments of the present invention generally relate to methods for physical vapor deposition processes. The methods generally include synchronizing process chamber conditions with the position of a magnetron. As the magnetron is scanned over a first area of a target, the conditions within the chamber are adjusted to a first set of predetermined process conditions. As the magnetron is subsequently scanned over a second area of the target, the conditions within the chamber are adjusted to a second set of predetermined process conditions different the first set. The target may be divided into more than two areas. By correlating the position of the magnetron with different sets of process conditions, film uniformity can be improved by reducing center-to-edge non-uniformities, such as re-sputter rates which may be higher when the magnetron is near the edge of the target.

Abstract translation: 本发明的实施方案一般涉及物理气相沉积方法的方法。 方法通常包括使处理室条件与磁控管的位置同步。 当磁控管在目标的第一区域上被扫描时，腔室内的条件被调整到第一组预定的工艺条件。 随着磁控管随后在目标的第二区域上扫描，腔室内的条件被调整到与第一组不同的第二组预定过程条件。 目标可分为两个以上的区域。 通过将磁控管的位置与不同的工艺条件相关联，可以通过减小中心到边缘的不均匀性来改善膜均匀性，例如当磁控管靠近靶的边缘时可能更高的再溅射速率 。

公开(公告)号：WO2012018770A2

公开(公告)日：2012-02-09

申请号：PCT/US2011/046204

申请日：2011-08-02

Applicant: APPLIED MATERIALS, INC. ,  LIU, Guojun ,  TANG, Xianmin ,  LUO, Qian ,  CAO, Yong

Inventor： LIU, Guojun ,  TANG, Xianmin ,  LUO, Qian ,  CAO, Yong

IPC: H01L21/203 ,  H05H1/46

CPC classification number: H01F7/0278 ,  H01J37/3408 ,  H01J37/3461

Abstract: Magnetrons for use in physical vapor deposition (PVD) chambers and methods of use thereof are provided herein. In some embodiments, an apparatus may include a support member having an axis of rotation; a plurality of first magnets coupled to the support member on a first side of the axis of rotation and having a first polarity oriented in a first direction perpendicular to the support member; and a second magnet coupled to the support member on a second side of the axis of rotation opposite the first side and having a second polarity oriented in a second direction opposite the first direction. In some embodiments, the apparatus is capable of forming a magnetic field including one or more magnetic nulls that modulate local plasma uniformity in a physical vapor deposition (PVD) chamber.

Abstract translation: 本文提供用于物理气相沉积（PVD）腔室的磁控管及其使用方法。 在一些实施例中，装置可以包括具有旋转轴线的支撑构件; 多个第一磁体，所述多个第一磁体在所述旋转轴的第一侧上联接到所述支撑构件，并且具有在垂直于所述支撑构件的第一方向上取向的第一极性; 以及第二磁体，所述第二磁体在与所述第一侧相对的所述旋转轴的第二侧上联接到所述支撑构件，并且具有沿与所述第一方向相反的第二方向取向的第二极性。 在一些实施例中，该设备能够形成包括调节物理气相沉积（PVD）室中的局部等离子体均匀性的一个或多个磁性零点的磁场。

公开(公告)号：WO2012018770A3

公开(公告)日：2012-08-09

申请号：PCT/US2011046204

申请日：2011-08-02

Applicant: APPLIED MATERIALS INC ,  LIU GUOJUN ,  TANG XIANMIN ,  LUO QIAN ,  CAO YONG

Inventor： LIU GUOJUN ,  TANG XIANMIN ,  LUO QIAN ,  CAO YONG

IPC: H01L21/203 ,  H05H1/46

CPC classification number: H01F7/0278 ,  H01J37/3408 ,  H01J37/3461

Abstract: Magnetrons for use in physical vapor deposition (PVD) chambers and methods of use thereof are provided herein. In some embodiments, an apparatus may include a support member having an axis of rotation; a plurality of first magnets coupled to the support member on a first side of the axis of rotation and having a first polarity oriented in a first direction perpendicular to the support member; and a second magnet coupled to the support member on a second side of the axis of rotation opposite the first side and having a second polarity oriented in a second direction opposite the first direction. In some embodiments, the apparatus is capable of forming a magnetic field including one or more magnetic nulls that modulate local plasma uniformity in a physical vapor deposition (PVD) chamber.

Abstract translation: 本文提供了用于物理气相沉积（PVD）室的磁控管及其使用方法。 在一些实施例中，装置可以包括具有旋转轴线的支撑构件; 多个第一磁体，其在所述旋转轴线的第一侧上联接到所述支撑构件，并且具有在垂直于所述支撑构件的第一方向上定向的第一极性; 以及第二磁体，其在所述旋转轴线的与所述第一侧相反的第二侧上与所述支撑构件相耦合，并且具有在与所述第一方向相反的第二方向上定向的第二极性。 在一些实施例中，该装置能够形成包括调制物理气相沉积（PVD）室中的局部等离子体均匀性的一个或多个磁零点的磁场。