公开(公告)号：WO2010093567A3

公开(公告)日：2010-08-19

申请号：PCT/US2010/023386

申请日：2010-02-05

Applicant: APPLIED MATERIALS, INC. ,  SHEN, Meihua ,  SUN, Noel ,  GANI, Nicolas ,  CHEN, Han-Hsiang ,  PEI, Eric ,  ZENG, Weimin ,  LILL, Thorsten, B. ,  MITRA, Uday ,  YIEH, Ellie, Y.

Inventor： SHEN, Meihua ,  SUN, Noel ,  GANI, Nicolas ,  CHEN, Han-Hsiang ,  PEI, Eric ,  ZENG, Weimin ,  LILL, Thorsten, B. ,  MITRA, Uday ,  YIEH, Ellie, Y.

IPC: H01L21/336 ,  H01L29/78

Abstract: Methods for fabricating a semiconductor device having a lanthanum-family- based oxide layer are described. A gate stack having a lanthanum-family-based oxide layer is provided above a substrate. At least a portion of the lanthanum-family-based oxide layer is modified to form a lanthanum-family-based halide portion. The lanthanum-family-based halide portion is removed with a water vapor treatment.

公开(公告)号：WO2010093567A2

公开(公告)日：2010-08-19

申请号：PCT/US2010023386

申请日：2010-02-05

Applicant: APPLIED MATERIALS INC ,  SHEN MEIHUA ,  SUN NOEL ,  GANI NICOLAS ,  CHEN HAN-HSIANG ,  PEI ERIC ,  ZENG WEIMIN ,  LILL THORSTEN B ,  MITRA UDAY ,  YIEH ELLIE Y

Inventor： SHEN MEIHUA ,  SUN NOEL ,  GANI NICOLAS ,  CHEN HAN-HSIANG ,  PEI ERIC ,  ZENG WEIMIN ,  LILL THORSTEN B ,  MITRA UDAY ,  YIEH ELLIE Y

IPC: H01L21/336 ,  H01L29/78

CPC classification number: H01L21/31122 ,  H01L21/28123 ,  H01L21/28167 ,  H01L21/31105 ,  H01L21/31111 ,  H01L21/32139 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

Abstract: Methods for fabricating a semiconductor device having a lanthanum-family- based oxide layer are described. A gate stack having a lanthanum-family-based oxide layer is provided above a substrate. At least a portion of the lanthanum-family-based oxide layer is modified to form a lanthanum-family-based halide portion. The lanthanum-family-based halide portion is removed with a water vapor treatment.

Abstract translation: 描述了制造具有镧族氧化物层的半导体器件的方法。 具有镧族氧化物层的栅极叠层设置在衬底上方。 镧族氧化物层的至少一部分被改性以形成基于镧族的卤化物部分。 用水蒸汽处理去除镧族卤化物部分。