公开(公告)号：WO2011024174A1

公开(公告)日：2011-03-03

申请号：PCT/IL2010/000707

申请日：2010-08-29

申请人： MOSAIC CRYSTALS LTD. ,  EINAV, Moshe

发明人： EINAV, Moshe

IPC分类号： H01J37/32

CPC分类号： H01J37/32357

摘要： Plasma generating apparatus including a high vacuum processing chamber, a transformer type plasmatron, coupled with the high vacuum processing chamber, and at least one gas source, coupled with the transformer type plasmatron, for introducing at least one gas into the transformer type plasmatron, the high vacuum processing chamber comprising at least one entry port, the transformer type plasmatron including a radio frequency power source, for generating alternating current power, a plurality of conductors, coupled with the radio frequency power source, a closed loop discharge chamber, for confining the gas, a plurality of high permeability magnetic cores, coupled around an outer portion of the closed loop discharge chamber and with the conductors, a plurality of apertures, located along an inner portion of the closed loop discharge chamber, and at least two dielectric gaskets, for coupling the inner portion with the outer portion, wherein the entry port is configured to receive the inner portion such that the inner portion physically penetrates the high vacuum processing chamber, the conductors forming a primary winding around the plurality of high permeability magnetic cores, the gas in the closed loop discharge chamber forming a secondary winding around the plurality of high permeability magnetic cores, wherein the transformer type plasmatron igniting the gas into at least one respective plasma when the conductors are provided with the alternating current power, and the apertures releasing the respective plasma from the inner portion into the high vacuum processing chamber.

摘要翻译： 等离子体发生装置包括高真空处理室，与高真空处理室耦合的变压器型等离子体发生器，以及与变压器型等离子管耦合的至少一个气体源，用于引入至少一个 气体进入变压器型等离子体发生器，高真空处理室包括至少一个入口，变压器型等离子体发生器包括射频功率源，用于产生交流功率;多个导体，与射频功率源耦合; 闭环放电腔室，用于限制气体;多个高磁导率磁芯，其耦合在所述闭环放电腔室的外部部分和所述导体周围;多个孔，其沿着所述闭环放电腔室的内部部分定位 以及至少两个电介质垫片，用于将内部部分与外部部分联接，其中入口端口被构造成r 接收内部部分，使得内部部分物理地穿透高真空处理室，导体围绕多个高磁导率磁芯形成初级绕组，闭合回路放电室中的气体围绕多个高磁导率形成次级绕组 其中当导体被提供交流电时，变压器型等离子体发生器将气体点燃成至少一个相应的等离子体，并且孔将各个等离子体从内部部分释放到高真空处理室中。

公开(公告)号：WO2012120497A1

公开(公告)日：2012-09-13

申请号：PCT/IL2012/000103

申请日：2012-03-04

申请人： MOSAIC CRYSTALS LTD. ,  EINAV, Moshe

发明人： EINAV, Moshe

IPC分类号： C03B9/00 ,  C03B23/00 ,  C03B25/00 ,  C30B29/40 ,  C23C14/00

CPC分类号： C30B19/00 ,  C30B7/005 ,  C30B9/00 ,  C30B19/068 ,  C30B19/10 ,  C30B23/00 ,  C30B23/002 ,  C30B23/02 ,  C30B25/00 ,  C30B25/02 ,  C30B25/16 ,  C30B29/40

摘要： Method for crystal growth from a surfactant of a metal-nonmetal (MN) compound, including the procedures of providing a seed crystal, introducing atoms of a first metal to contact with the seed crystal thus forming a thin liquid metal wetting layer on a surface of the seed crystal, setting a temperature of the seed crystal below a minimal temperature required for dissolving MN molecules in the wetting layer and above a melting point of the first metal, each one of the MN molecules being formed from an atom of a second metal and an atom of a first nonmetal, introducing the MN molecules which form an MN surfactant monolayer, thereby facilitating a formation of the wetting layer between the MN surfactant monolayer and the surface of the seed crystal, and regulating a thickness of the wetting layer, thereby growing an epitaxial layer of the MN compound on the seed crystal.

摘要翻译： 从金属 - 非金属（MN）化合物的表面活性剂生长晶体的方法，包括提供晶种的步骤，引入第一金属的原子与晶种接触，从而在表面上形成薄的液体金属润湿层 晶种，将晶种的温度设定在将MN分子溶解在润湿层中并且高于第一金属的熔点所需的最小温度之下，每个MN分子由第二金属的原子形成， 引入形成MN表面活性剂单层的MN分子，从而促进在MN表面活性剂单层和晶种表面之间形成润湿层，并调节润湿层的厚度，从而生长第一非金属的原子 在晶种上的MN化合物的外延层。

公开(公告)号：WO2008102358A2

公开(公告)日：2008-08-28

申请号：PCT/IL2008/000229

申请日：2008-02-21

申请人： MOSAIC CRYSTALS ,  EINAV, Moshe

发明人： EINAV, Moshe

IPC分类号： C23C14/06 ,  C23C14/14 ,  C23C14/58 ,  C30B23/02 ,  C30B29/40

CPC分类号： C23C14/0617 ,  C23C14/0026 ,  C23C14/14 ,  C23C14/5826 ,  C23C14/586 ,  C30B23/02 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406

摘要： A method for forming a group-III metal nitride material film attached to a substrate, the method including the procedures of subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and heating the substrate to a temperature of between approximately 500°C-800°C. The method further includes the procedures of introducing a group III metal vapor to the surface of the substrate at a base pressure of at least 0.01 Pa, until a plurality of group III metal drops form on the surface, and introducing active nitrogen to the surface at a working pressure of between 0.05 Pa and 2.5 Pa, until group III metal nitride molecules form on the group III metal drops. The method also includes the procedures of maintaining the working pressure and the active nitrogen until the group III metal nitride molecules diffuse into the group III metal drops, forming nitride/metal solution drops, and until the nitride/metal solution drops turn into a wetting layer on the substrate, and continuing to increase the concentration of group III metal nitride molecules in the wetting layer until all the group III metal atoms contained in the wetting layer are exhausted, and the wetting layer transforms into a group III metal nitride film. According to another aspect of the disclosed technique, if the wetting layer is relatively thin, then group-III metal nitride molecules diffuse into the wetting layer, during the procedure of continuing to increase, thereby increasing the viscosity thereof, transforming the wetting layer into a solid amorphous group III metal nitride film. According to a further aspect of the disclosed technique, if the wetting layer is relatively thick, then a crystalline seeding layer is formed on the surface of the wetting layer, during the procedure of continuing to increase, and wherein the active nitrogen diffuses through the seeding layer, reacting with group-III metal in the wetting layer, thereby further thickening the seeding layer, transforming the wetting layer into a crystalline group III metal nitride film.

摘要翻译： 一种形成附着在基板上的III族金属氮化物材料膜的方法，该方法包括使基板经受不大于0.01Pa的环境压力，并将基板加热至约500℃ -800℃。 该方法还包括以至少0.01Pa的基础压力将III族金属蒸汽引入基材表面的步骤，直到在表面上形成多个III族金属液滴，并将活性氮引入到表面 工作压力在0.05Pa和2.5Pa之间，直到III族金属氮化物分子在III族金属液滴上形成。 该方法还包括维持工作压力和活性氮直到III族金属氮化物分子扩散到III族金属液滴中的步骤，形成氮化物/金属溶液滴，并且直到氮化物/金属溶液滴变成润湿层 并且继续增加润湿层中III族金属氮化物分子的浓度，直到润湿层中包含的所有III族金属原子被排出，并且润湿层转变成III族金属氮化物膜。 根据所公开的技术的另一方面，如果润湿层相对较薄，则III族金属氮化物分子在继续增加的过程中扩散到润湿层中，由此增加其粘度，将润湿层转变成 固体非晶III族金属氮化物膜。 根据所公开的技术的另一方面，如果润湿层相对较厚，则在持续增加的过程中，在润湿层的表面上形成结晶接种层，并且其中活性氮通过接种扩散 层，与润湿层中的III族金属反应，从而进一步增厚接种层，将润湿层转变成晶体III族金属氮化物膜。

公开(公告)号：WO2007057892A2

公开(公告)日：2007-05-24

申请号：PCT/IL2006/001319

申请日：2006-11-15

申请人： MOSAIC CRYSTALS LTD. ,  EINAV, Moshe

发明人： EINAV, Moshe

IPC分类号： C30B29/38

CPC分类号： C30B29/406 ,  C30B23/08

摘要： A method for forming a gallium nitride crystal sheet. According to the method a metal melt, including gallium, is brought to a vacuum of 0.01 Pa or lower and is heated to a growth temperature of between approximately 860 o C and approximately 870 o C. A nitrogen plasma is applied to the surface of the melt at a sub-atmospheric working pressure, until a gallium nitride crystal sheet is formed on top. Preferably, the growth temperature is of 863 o C, and the working pressure is within the range of 0.05 Pa and 2.5 Pa. According to a preferred embodiment, application of the plasma includes introducing nitrogen gas to the metal melt at the working pressure, igniting the gas into plasma, directing the plasma to the surface of the metal melt, until gallium nitride crystals crystallize thereon, and maintaining the working pressure and the directed plasma until a gallium nitride crystal sheet is formed.

摘要翻译： 一种形成氮化镓晶片的方法。 根据该方法，使包括镓的金属熔体达到0.01Pa或更低的真空，并加热至大约860℃至大约870℃之间的生长温度， SUP>℃。 在亚大气压工作压力下将氮等离子体施加到熔体的表面，直到在顶部形成氮化镓晶片。 优选地，生长温度为863℃，工作压力在0.05Pa和2.5Pa的范围内。根据优选实施方案，等离子体的应用包括将氮气引入金属 在工作压力下熔化，将气体点燃到等离子体中，将等离子体引导到金属熔体的表面，直到氮化镓晶体在其上结晶，并保持工作压力和定向等离子体直到形成氮化镓晶片。

公开(公告)号：WO2011024174A9

公开(公告)日：2011-10-20

申请号：PCT/IL2010000707

申请日：2010-08-29

申请人： MOSAIC CRYSTALS LTD ,  EINAV MOSHE

发明人： EINAV MOSHE

IPC分类号： H01J37/32

CPC分类号： H01J37/32357

摘要： Plasma generating apparatus including a high vacuum processing chamber, a transformer type plasmatron, coupled with the high vacuum processing chamber, and at least one gas source, coupled with the transformer type plasmatron, for introducing at least one gas into the transformer type plasmatron, the high vacuum processing chamber comprising at least one entry port, the transformer type plasmatron including a radio frequency power source, for generating alternating current power, a plurality of conductors, coupled with the radio frequency power source, a closed loop discharge chamber, for confining the gas, a plurality of high permeability magnetic cores, coupled around an outer portion of the closed loop discharge chamber and with the conductors, a plurality of apertures, located along an inner portion of the closed loop discharge chamber, and at least two dielectric gaskets, for coupling the inner portion with the outer portion, wherein the entry port is configured to receive the inner portion such that the inner portion physically penetrates the high vacuum processing chamber, the conductors forming a primary winding around the plurality of high permeability magnetic cores, the gas in the closed loop discharge chamber forming a secondary winding around the plurality of high permeability magnetic cores, wherein the transformer type plasmatron igniting the gas into at least one respective plasma when the conductors are provided with the alternating current power, and the apertures releasing the respective plasma from the inner portion into the high vacuum processing chamber.

摘要翻译： 等离子体发生装置包括高真空处理室，与高真空处理室耦合的变压器型等离子体，以及至少一个与变压器型等离子体激元耦合的气源，用于将至少一种气体引入变压器型等离子体， 高真空处理室，包括至少一个入口，用于产生交流电力的包括射频电源的变压器型等离子体，与射频电源耦合的多个导体，闭环放电室，用于限制 气体，多个高磁导率磁芯，围绕闭环放电室的外部部分和导体耦合，沿着闭环放电室的内部设置的多个孔，以及至少两个电介质垫圈， 用于将所述内部部分与所述外部部分联接，其中所述入口端口被配置为接纳所述客舱 所述内部物理地穿透所述高真空处理室，所述导体在所述多个高磁导率磁芯周围形成初级绕组，所述闭环放电室中的气体围绕所述多个高磁导率磁芯形成次级绕组 其中当所述导体设置有交流电力时，所述变压器型等离子体激发器将所述气体点燃到至少一个相应的等离子体中，并且所述孔将所述等离子体从所述内部部分释放到所述高真空处理室中。

公开(公告)号：WO2009122414A3

公开(公告)日：2010-05-06

申请号：PCT/IL2009000371

申请日：2009-04-05

申请人： MOSAIC CRYSTALS LTD ,  EINAV MOSHE

发明人： EINAV MOSHE

IPC分类号： H01L31/052 ,  F24S23/00

CPC分类号： H01L31/0524 ,  F24J2/062 ,  G02B5/045 ,  H01L27/302 ,  H01L31/0543 ,  Y02E10/40 ,  Y02E10/52

摘要： Solar system for converting solar radiation into electric energy, the system comprising: a refraction array and a converting array, the refracting array including at least one refraction sub array, each of the refraction sub arrays including a plurality of refraction sites, each of the refraction sites refracting variable approach angle collimated solar radiation into a plurality of solar rays, each of the solar rays being of a different waveband, each of the refraction sites directing each of the solar rays, refracted thereby, in a different direction, the different direction being at least dependent on the approach angle of the solar radiation, the converting array including a plurality of broadband converting cells, positioned such that light refracted by the refraction array impinges on the converting array, wherein at any given moment, each of the converting cells receives solar rays of a specific waveband originating from different refraction sites and arriving from different directions thereto.

摘要翻译： 用于将太阳辐射转换为电能的太阳能系统，该系统包括：折射阵列和转换阵列，折射阵列包括至少一个折射子阵列，每个折射子阵列包括多个折射位置，每个折射 将可变进场角准直太阳辐射折射成多个太阳射线的场地，每个太阳射线具有不同的波段，每个折射位置指向每个太阳射线，从而沿不同的方向折射，不同的方向为 至少取决于太阳辐射的接近角，该转换阵列包括多个宽带转换单元，定位成使得由折射阵列折射的光照射在转换阵列上，其中在任何给定时刻，每个转换单元接收 来自不同折射点的特定波段的太阳光线，并从不同的目录到达 对此。

公开(公告)号：WO2009122414A2

公开(公告)日：2009-10-08

申请号：PCT/IL2009/000371

申请日：2009-04-05

申请人： MOSAIC CRYSTALS LTD. ,  EINAV, Moshe

发明人： EINAV, Moshe

IPC分类号： F24S23/00

CPC分类号： H01L31/0524 ,  F24S23/10 ,  G02B5/045 ,  H01L27/302 ,  H01L31/0543 ,  Y02E10/40 ,  Y02E10/52

摘要： Solar system for converting solar radiation into electric energy, the system comprising: a refraction array and a converting array, the refracting array including at least one refraction sub array, each of the refraction sub arrays including a plurality of refraction sites, each of the refraction sites refracting variable approach angle collimated solar radiation into a plurality of solar rays, each of the solar rays being of a different waveband, each of the refraction sites directing each of the solar rays, refracted thereby, in a different direction, the different direction being at least dependent on the approach angle of the solar radiation, the converting array including a plurality of broadband converting cells, positioned such that light refracted by the refraction array impinges on the converting array, wherein at any given moment, each of the converting cells receives solar rays of a specific waveband originating from different refraction sites and arriving from different directions thereto.

摘要翻译： 用于将太阳辐射转换为电能的太阳能系统，该系统包括：折射阵列和转换阵列，折射阵列包括至少一个折射子阵列，每个折射子阵列包括多个折射位置，每个折射 将可变进场角准直太阳辐射折射成多个太阳射线的场地，每个太阳射线具有不同的波段，每个折射位置指向每个太阳射线，从而沿不同的方向折射，不同的方向为 至少取决于太阳辐射的接近角，该转换阵列包括多个宽带转换单元，定位成使得由折射阵列折射的光照射在转换阵列上，其中在任何给定时刻，每个转换单元接收 来自不同折射点的特定波段的太阳光线，并从不同的目录到达 对此。

公开(公告)号：WO2009066286A3

公开(公告)日：2009-05-28

申请号：PCT/IL2008/001519

申请日：2008-11-19

申请人： MOSAIC CRYSTALS LTD. ,  EINAV, Moshe

发明人： EINAV, Moshe

IPC分类号： H01L21/203 ,  H01L21/20

摘要： Reactive evaporation method for forming a group III-V amorphous material attached to a substrate, the method including the procedures of subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and introducing active group-V matter to the surface of the substrate at a working pressure of between 0.05 Pa and 2.5 Pa, and group III metal vapor, until an amorphous group III-V material layer is formed on the surface.

公开(公告)号：WO2009066286A2

公开(公告)日：2009-05-28

申请号：PCT/IL2008001519

申请日：2008-11-19

申请人： MOSAIC CRYSTALS LTD ,  EINAV MOSHE

发明人： EINAV MOSHE

IPC分类号： H01L21/203 ,  H01L21/20

CPC分类号： H01L21/02592 ,  B82Y10/00 ,  C23C14/0617 ,  C23C14/22 ,  H01J37/3053 ,  H01J37/32357 ,  H01L21/0237 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02601 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/127 ,  H01L29/2006

摘要： Reactive evaporation method for forming a group III-V amorphous material attached to a substrate, the method including the procedures of subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and introducing active group-V matter to the surface of the substrate at a working pressure of between 0.05 Pa and 2.5 Pa, and group III metal vapor, until an amorphous group III-V material layer is formed on the surface.

摘要翻译： 用于形成附着在基板上的III-V族非晶态材料的反应蒸发方法，该方法包括使基板经受不大于0.01Pa的环境压力，并将活性基团-V物质引入到基板的表面 在0.05Pa至2.5Pa的工作压力和III族金属蒸汽之间，直到在表面上形成非晶III-V族材料层。

公开(公告)号：WO2007057892A3

公开(公告)日：2009-04-09

申请号：PCT/IL2006001319

申请日：2006-11-15

申请人： MOSAIC CRYSTALS LTD ,  EINAV MOSHE

发明人： EINAV MOSHE

IPC分类号： C30B9/00

CPC分类号： C30B29/406 ,  C30B23/08

摘要： A method for forming a gallium nitride crystal sheet. According to the method a metal melt, including gallium, is brought to a vacuum of 0.01 Pa or lower and is heated to a growth temperature of between approximately 860oC and approximately 870oC. A nitrogen plasma is applied to the surface of the melt at a sub-atmospheric working pressure, until a gallium nitride crystal sheet is formed on top. Preferably, the growth temperature is of 863oC, and the working pressure is within the range of 0.05 Pa and 2.5 Pa. According to a preferred embodiment, application of the plasma includes introducing nitrogen gas to the metal melt at the working pressure, igniting the gas into plasma, directing the plasma to the surface of the metal melt, until gallium nitride crystals crystallize thereon, and maintaining the working pressure and the directed plasma until a gallium nitride crystal sheet is formed.

摘要翻译： 一种形成氮化镓晶片的方法。 根据该方法，使含有镓的金属熔体达到0.01Pa或更低的真空，并加热至约860℃至约870℃之间的生长温度。 在亚大气压工作压力下将氮等离子体施加到熔体的表面，直到顶部形成氮化镓晶片。 优选地，生长温度为863℃，工作压力在0.05Pa和2.5Pa的范围内。根据优选实施例，等离子体的应用包括在工作压力下将氮气引入金属熔体中，点燃气体 将等离子体引导到金属熔体的表面，直到氮化镓晶体在其上结晶，并保持工作压力和定向等离子体直到形成氮化镓晶片。