公开(公告)号：WO2011024174A1

公开(公告)日：2011-03-03

申请号：PCT/IL2010/000707

申请日：2010-08-29

申请人： MOSAIC CRYSTALS LTD. ,  EINAV, Moshe

发明人： EINAV, Moshe

IPC分类号： H01J37/32

CPC分类号： H01J37/32357

摘要： Plasma generating apparatus including a high vacuum processing chamber, a transformer type plasmatron, coupled with the high vacuum processing chamber, and at least one gas source, coupled with the transformer type plasmatron, for introducing at least one gas into the transformer type plasmatron, the high vacuum processing chamber comprising at least one entry port, the transformer type plasmatron including a radio frequency power source, for generating alternating current power, a plurality of conductors, coupled with the radio frequency power source, a closed loop discharge chamber, for confining the gas, a plurality of high permeability magnetic cores, coupled around an outer portion of the closed loop discharge chamber and with the conductors, a plurality of apertures, located along an inner portion of the closed loop discharge chamber, and at least two dielectric gaskets, for coupling the inner portion with the outer portion, wherein the entry port is configured to receive the inner portion such that the inner portion physically penetrates the high vacuum processing chamber, the conductors forming a primary winding around the plurality of high permeability magnetic cores, the gas in the closed loop discharge chamber forming a secondary winding around the plurality of high permeability magnetic cores, wherein the transformer type plasmatron igniting the gas into at least one respective plasma when the conductors are provided with the alternating current power, and the apertures releasing the respective plasma from the inner portion into the high vacuum processing chamber.

摘要翻译： 等离子体发生装置包括高真空处理室，与高真空处理室耦合的变压器型等离子体发生器，以及与变压器型等离子管耦合的至少一个气体源，用于引入至少一个 气体进入变压器型等离子体发生器，高真空处理室包括至少一个入口，变压器型等离子体发生器包括射频功率源，用于产生交流功率;多个导体，与射频功率源耦合; 闭环放电腔室，用于限制气体;多个高磁导率磁芯，其耦合在所述闭环放电腔室的外部部分和所述导体周围;多个孔，其沿着所述闭环放电腔室的内部部分定位 以及至少两个电介质垫片，用于将内部部分与外部部分联接，其中入口端口被构造成r 接收内部部分，使得内部部分物理地穿透高真空处理室，导体围绕多个高磁导率磁芯形成初级绕组，闭合回路放电室中的气体围绕多个高磁导率形成次级绕组 其中当导体被提供交流电时，变压器型等离子体发生器将气体点燃成至少一个相应的等离子体，并且孔将各个等离子体从内部部分释放到高真空处理室中。

公开(公告)号：WO2012120497A1

公开(公告)日：2012-09-13

申请号：PCT/IL2012/000103

申请日：2012-03-04

申请人： MOSAIC CRYSTALS LTD. ,  EINAV, Moshe

发明人： EINAV, Moshe

IPC分类号： C03B9/00 ,  C03B23/00 ,  C03B25/00 ,  C30B29/40 ,  C23C14/00

CPC分类号： C30B19/00 ,  C30B7/005 ,  C30B9/00 ,  C30B19/068 ,  C30B19/10 ,  C30B23/00 ,  C30B23/002 ,  C30B23/02 ,  C30B25/00 ,  C30B25/02 ,  C30B25/16 ,  C30B29/40

摘要： Method for crystal growth from a surfactant of a metal-nonmetal (MN) compound, including the procedures of providing a seed crystal, introducing atoms of a first metal to contact with the seed crystal thus forming a thin liquid metal wetting layer on a surface of the seed crystal, setting a temperature of the seed crystal below a minimal temperature required for dissolving MN molecules in the wetting layer and above a melting point of the first metal, each one of the MN molecules being formed from an atom of a second metal and an atom of a first nonmetal, introducing the MN molecules which form an MN surfactant monolayer, thereby facilitating a formation of the wetting layer between the MN surfactant monolayer and the surface of the seed crystal, and regulating a thickness of the wetting layer, thereby growing an epitaxial layer of the MN compound on the seed crystal.

摘要翻译： 从金属 - 非金属（MN）化合物的表面活性剂生长晶体的方法，包括提供晶种的步骤，引入第一金属的原子与晶种接触，从而在表面上形成薄的液体金属润湿层 晶种，将晶种的温度设定在将MN分子溶解在润湿层中并且高于第一金属的熔点所需的最小温度之下，每个MN分子由第二金属的原子形成， 引入形成MN表面活性剂单层的MN分子，从而促进在MN表面活性剂单层和晶种表面之间形成润湿层，并调节润湿层的厚度，从而生长第一非金属的原子 在晶种上的MN化合物的外延层。

公开(公告)号：WO2008102358A2

公开(公告)日：2008-08-28

申请号：PCT/IL2008/000229

申请日：2008-02-21

申请人： MOSAIC CRYSTALS ,  EINAV, Moshe

发明人： EINAV, Moshe

IPC分类号： C23C14/06 ,  C23C14/14 ,  C23C14/58 ,  C30B23/02 ,  C30B29/40

CPC分类号： C23C14/0617 ,  C23C14/0026 ,  C23C14/14 ,  C23C14/5826 ,  C23C14/586 ,  C30B23/02 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406

摘要： A method for forming a group-III metal nitride material film attached to a substrate, the method including the procedures of subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and heating the substrate to a temperature of between approximately 500°C-800°C. The method further includes the procedures of introducing a group III metal vapor to the surface of the substrate at a base pressure of at least 0.01 Pa, until a plurality of group III metal drops form on the surface, and introducing active nitrogen to the surface at a working pressure of between 0.05 Pa and 2.5 Pa, until group III metal nitride molecules form on the group III metal drops. The method also includes the procedures of maintaining the working pressure and the active nitrogen until the group III metal nitride molecules diffuse into the group III metal drops, forming nitride/metal solution drops, and until the nitride/metal solution drops turn into a wetting layer on the substrate, and continuing to increase the concentration of group III metal nitride molecules in the wetting layer until all the group III metal atoms contained in the wetting layer are exhausted, and the wetting layer transforms into a group III metal nitride film. According to another aspect of the disclosed technique, if the wetting layer is relatively thin, then group-III metal nitride molecules diffuse into the wetting layer, during the procedure of continuing to increase, thereby increasing the viscosity thereof, transforming the wetting layer into a solid amorphous group III metal nitride film. According to a further aspect of the disclosed technique, if the wetting layer is relatively thick, then a crystalline seeding layer is formed on the surface of the wetting layer, during the procedure of continuing to increase, and wherein the active nitrogen diffuses through the seeding layer, reacting with group-III metal in the wetting layer, thereby further thickening the seeding layer, transforming the wetting layer into a crystalline group III metal nitride film.

摘要翻译： 一种形成附着在基板上的III族金属氮化物材料膜的方法，该方法包括使基板经受不大于0.01Pa的环境压力，并将基板加热至约500℃ -800℃。 该方法还包括以至少0.01Pa的基础压力将III族金属蒸汽引入基材表面的步骤，直到在表面上形成多个III族金属液滴，并将活性氮引入到表面 工作压力在0.05Pa和2.5Pa之间，直到III族金属氮化物分子在III族金属液滴上形成。 该方法还包括维持工作压力和活性氮直到III族金属氮化物分子扩散到III族金属液滴中的步骤，形成氮化物/金属溶液滴，并且直到氮化物/金属溶液滴变成润湿层 并且继续增加润湿层中III族金属氮化物分子的浓度，直到润湿层中包含的所有III族金属原子被排出，并且润湿层转变成III族金属氮化物膜。 根据所公开的技术的另一方面，如果润湿层相对较薄，则III族金属氮化物分子在继续增加的过程中扩散到润湿层中，由此增加其粘度，将润湿层转变成 固体非晶III族金属氮化物膜。 根据所公开的技术的另一方面，如果润湿层相对较厚，则在持续增加的过程中，在润湿层的表面上形成结晶接种层，并且其中活性氮通过接种扩散 层，与润湿层中的III族金属反应，从而进一步增厚接种层，将润湿层转变成晶体III族金属氮化物膜。

公开(公告)号：WO2007057892A2

公开(公告)日：2007-05-24

申请号：PCT/IL2006/001319

申请日：2006-11-15

申请人： MOSAIC CRYSTALS LTD. ,  EINAV, Moshe

发明人： EINAV, Moshe

IPC分类号： C30B29/38

CPC分类号： C30B29/406 ,  C30B23/08

摘要： A method for forming a gallium nitride crystal sheet. According to the method a metal melt, including gallium, is brought to a vacuum of 0.01 Pa or lower and is heated to a growth temperature of between approximately 860 o C and approximately 870 o C. A nitrogen plasma is applied to the surface of the melt at a sub-atmospheric working pressure, until a gallium nitride crystal sheet is formed on top. Preferably, the growth temperature is of 863 o C, and the working pressure is within the range of 0.05 Pa and 2.5 Pa. According to a preferred embodiment, application of the plasma includes introducing nitrogen gas to the metal melt at the working pressure, igniting the gas into plasma, directing the plasma to the surface of the metal melt, until gallium nitride crystals crystallize thereon, and maintaining the working pressure and the directed plasma until a gallium nitride crystal sheet is formed.

摘要翻译： 一种形成氮化镓晶片的方法。 根据该方法，使包括镓的金属熔体达到0.01Pa或更低的真空，并加热至大约860℃至大约870℃之间的生长温度， SUP>℃。 在亚大气压工作压力下将氮等离子体施加到熔体的表面，直到在顶部形成氮化镓晶片。 优选地，生长温度为863℃，工作压力在0.05Pa和2.5Pa的范围内。根据优选实施方案，等离子体的应用包括将氮气引入金属 在工作压力下熔化，将气体点燃到等离子体中，将等离子体引导到金属熔体的表面，直到氮化镓晶体在其上结晶，并保持工作压力和定向等离子体直到形成氮化镓晶片。

公开(公告)号：WO2015140806A1

公开(公告)日：2015-09-24

申请号：PCT/IL2015/050292

申请日：2015-03-19

申请人： SKOKIE SWIFT CORPORATION ,  EINAV, Moshe

发明人： EINAV, Moshe

IPC分类号： H01L29/732

CPC分类号： H01L29/7827 ,  H01L21/283 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/66666

摘要： A vertical FET, including a source layer, a channel layer, a drain layer and a gate dielectric, the source layer being coupled with a source electrode, the channel layer being deposited on top of the source layer, the drain layer being deposited on top of the channel layer and being coupled with a drain electrode, the gate dielectric being conformally deposited within a cylindrical niche through the drain layer down to the channel layer, the gate dielectric being encircled by the drain layer, the gate dielectric being coupled with a gate electrode deposited within the cylindrical niche, when a threshold voltage Is applied to the gate electrode a channel is formed between the source layer and the drain layer, a length of the channel corresponding to a thickness of the channel layer and a width of the channel corresponding to a perimeter of the cylindrical niche.

摘要翻译： 一种垂直FET，包括源极层，沟道层，漏极层和栅极电介质，源极层与源极耦合，沟道层沉积在源极层的顶部，漏极层沉积在顶部 并且与漏电极耦合，所述栅极电介质通过所述漏极层在圆柱形位置内共形沉积到所述沟道层，所述栅极电介质被所述漏极层包围，所述栅极电介质与栅极耦合 电极沉积在圆柱形利基内，当阈值电压施加到栅极电极时，在源极层和漏极层之间形成沟道，沟道的长度对应于沟道层的厚度和沟道的宽度对应 到圆柱形利基的周边。

公开(公告)号：WO2012120497A4

公开(公告)日：2012-11-01

申请号：PCT/IL2012000103

申请日：2012-03-04

申请人： MOSAIC CRYSTALS LTD ,  EINAV MOSHE

发明人： EINAV MOSHE

IPC分类号： C03B9/00 ,  C03B23/00 ,  C03B25/00 ,  C23C14/00 ,  C30B29/40

CPC分类号： C30B19/00 ,  C30B7/005 ,  C30B9/00 ,  C30B19/068 ,  C30B19/10 ,  C30B23/00 ,  C30B23/002 ,  C30B23/02 ,  C30B25/00 ,  C30B25/02 ,  C30B25/16 ,  C30B29/40

摘要： Method for crystal growth from a surfactant of a metal-nonmetal (MN) compound, including the procedures of providing a seed crystal, introducing atoms of a first metal to contact with the seed crystal thus forming a thin liquid metal wetting layer on a surface of the seed crystal, setting a temperature of the seed crystal below a minimal temperature required for dissolving MN molecules in the wetting layer and above a melting point of the first metal, each one of the MN molecules being formed from an atom of a second metal and an atom of a first nonmetal, introducing the MN molecules which form an MN surfactant monolayer, thereby facilitating a formation of the wetting layer between the MN surfactant monolayer and the surface of the seed crystal, and regulating a thickness of the wetting layer, thereby growing an epitaxial layer of the MN compound on the seed crystal.

摘要翻译： 用于由金属 - 非金属（MN）化合物的表面活性剂进行晶体生长的方法，包括提供晶种，引入第一金属的原子以与晶种接触，从而在第一金属表面上形成薄液体金属润湿层 所述晶种将所述晶种的温度设定为低于将所述MN分子溶解在所述润湿层中所需的最低温度且高于所述第一金属的熔点，所述MN分子中的每一者由第二金属的原子形成并且 第一非金属的原子，引入形成MN表面活性剂单层的MN分子，由此促进MN表面活性剂单层与晶种表面之间的润湿层的形成，并且调节润湿层的厚度，由此生长 在晶种上的MN化合物的外延层。

公开(公告)号：WO2005122691A3

公开(公告)日：2007-03-08

申请号：PCT/IL2005000630

申请日：2005-06-15

申请人： MOSAIC CRYSTALS LTD ,  EINAV MOSHE

发明人： EINAV MOSHE

IPC分类号： C30B17/00 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14 ,  H01L21/208 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： C30B33/06 ,  C23C24/00 ,  C30B29/403 ,  H01L21/0254 ,  H01L21/02614 ,  Y10T117/1024

摘要： A method for forming a uniformly oriented crystalline sheet, wherein a plurality of crystallites are introduced into a liquid. At least a portion of the crystallites float on the surface of the liquid, and are induced to self orientate until they are uniformly oriented in a compact mosaic configuration, while their sintering is prevented. A uniformly oriented crystalline sheet is formed from the compact mosaic configuration, for example, by sintering the crystallites. An apparatus for forming a crystalline sheet includes a container containing a liquid, wherein a plurality of crystallites are introduced and at least a portion thereof float on the surface of the liquid without sintering. The apparatus also includes a flow unit for inducing a flow of the liquid which moves the floating crystallites, and self-orientation means for allowing self-orientation of the floating crystallites, without sintering, until the floating crystallites are uniformly oriented in a compact mosaic configuration, ready for forming a uniformly oriented crystalline sheet, for example, by sintering the crystallites.

摘要翻译： 一种形成均匀取向的结晶片的方法，其中多个微晶被引入到液体中。 至少一部分微晶漂浮在液体的表面上，并被诱导自我定向，直到它们均匀地定向成紧凑的镶嵌结构，同时防止其烧结。 由紧凑的镶嵌结构形成均匀取向的结晶片，例如烧结微晶。 用于形成结晶片的装置包括容纳液体的容器，其中引入多个微晶，并且其至少一部分浮在液体的表面上而不烧结。 该装置还包括用于诱导移动浮动微晶的液体流动的流动单元和用于允许漂浮微晶的自取向而不进行烧结的自动取向装置，直到浮动微晶均匀地定向成紧凑的镶嵌结构 ，准备形成均匀取向的结晶片，例如烧结微晶。

公开(公告)号：WO2009066286A3

公开(公告)日：2009-05-28

申请号：PCT/IL2008/001519

申请日：2008-11-19

申请人： MOSAIC CRYSTALS LTD. ,  EINAV, Moshe

发明人： EINAV, Moshe

IPC分类号： H01L21/203 ,  H01L21/20

摘要： Reactive evaporation method for forming a group III-V amorphous material attached to a substrate, the method including the procedures of subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and introducing active group-V matter to the surface of the substrate at a working pressure of between 0.05 Pa and 2.5 Pa, and group III metal vapor, until an amorphous group III-V material layer is formed on the surface.

公开(公告)号：WO2009066286A2

公开(公告)日：2009-05-28

申请号：PCT/IL2008001519

申请日：2008-11-19

申请人： MOSAIC CRYSTALS LTD ,  EINAV MOSHE

发明人： EINAV MOSHE

IPC分类号： H01L21/203 ,  H01L21/20

CPC分类号： H01L21/02592 ,  B82Y10/00 ,  C23C14/0617 ,  C23C14/22 ,  H01J37/3053 ,  H01J37/32357 ,  H01L21/0237 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02601 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/127 ,  H01L29/2006

摘要： Reactive evaporation method for forming a group III-V amorphous material attached to a substrate, the method including the procedures of subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and introducing active group-V matter to the surface of the substrate at a working pressure of between 0.05 Pa and 2.5 Pa, and group III metal vapor, until an amorphous group III-V material layer is formed on the surface.

摘要翻译： 用于形成附着在基板上的III-V族非晶态材料的反应蒸发方法，该方法包括使基板经受不大于0.01Pa的环境压力，并将活性基团-V物质引入到基板的表面 在0.05Pa至2.5Pa的工作压力和III族金属蒸汽之间，直到在表面上形成非晶III-V族材料层。

公开(公告)号：WO2007057892A3

公开(公告)日：2009-04-09

申请号：PCT/IL2006001319

申请日：2006-11-15

申请人： MOSAIC CRYSTALS LTD ,  EINAV MOSHE

发明人： EINAV MOSHE

IPC分类号： C30B9/00

CPC分类号： C30B29/406 ,  C30B23/08

摘要： A method for forming a gallium nitride crystal sheet. According to the method a metal melt, including gallium, is brought to a vacuum of 0.01 Pa or lower and is heated to a growth temperature of between approximately 860oC and approximately 870oC. A nitrogen plasma is applied to the surface of the melt at a sub-atmospheric working pressure, until a gallium nitride crystal sheet is formed on top. Preferably, the growth temperature is of 863oC, and the working pressure is within the range of 0.05 Pa and 2.5 Pa. According to a preferred embodiment, application of the plasma includes introducing nitrogen gas to the metal melt at the working pressure, igniting the gas into plasma, directing the plasma to the surface of the metal melt, until gallium nitride crystals crystallize thereon, and maintaining the working pressure and the directed plasma until a gallium nitride crystal sheet is formed.

摘要翻译： 一种形成氮化镓晶片的方法。 根据该方法，使含有镓的金属熔体达到0.01Pa或更低的真空，并加热至约860℃至约870℃之间的生长温度。 在亚大气压工作压力下将氮等离子体施加到熔体的表面，直到顶部形成氮化镓晶片。 优选地，生长温度为863℃，工作压力在0.05Pa和2.5Pa的范围内。根据优选实施例，等离子体的应用包括在工作压力下将氮气引入金属熔体中，点燃气体 将等离子体引导到金属熔体的表面，直到氮化镓晶体在其上结晶，并保持工作压力和定向等离子体直到形成氮化镓晶片。