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    PHOTOLITHOGRAPHY MASK REPAIR
    2.
    发明申请
    PHOTOLITHOGRAPHY MASK REPAIR 审中-公开
    光刻胶修复

    公开(公告)号：WO2004027684B1

    公开(公告)日：2005-01-06

    申请号：PCT/US0329521

    申请日：2003-09-18

    Applicant: FEI CO ,  STEWART DIANE K ,  CASEY JR J DAVID ,  BEATY JOHN ,  MUSIL CHRISTIAN R ,  BERGER STEVEN

    Inventor： STEWART DIANE K ,  CASEY JR J DAVID ,  BEATY JOHN ,  MUSIL CHRISTIAN R ,  BERGER STEVEN

    IPC: A61N5/00 ,  C23C14/00 ,  G03F1/00 ,  G03F9/00 ,  G06K20060101 ,  G06K9/00 ,  G21G5/00 ,  H01J37/00 ,  H01L21/027

    CPC classification number: G03F1/74 ,  G03F1/72

    Abstract: Masks can be repaired by creating a structure that is different from the original design, but that produces the same aerial image. For example, missing opaque material can be replaced by implanting gallium atoms to reduce transmission and quartz can be etched to an appropriate depth to produce the proper phase. In another aspect, a laser or other means can be used to remove an area of a mask around a defect, and then mask structures, either the intended design structures or alternate structures that produce the same aerial image, can be constructed using charged particle beam deposition and etching. For example, an electron beam can be used to deposit quartz to alter the phase of transmitted light. An electron beam can also be used with a gas to etch quartz to remove a layer including implanted gallium atoms. Gallium staining can also be reduced or eliminated by providing a sacrificial layer that can be removed, along with the implanted gallium atoms, using, for example, a broad ion beam. In another aspect, a charged particle beam can be programmed to etch a defect using three-dimensional information derived from two charged particle beams images of the defect from different angle.

    Abstract translation: 可以通过创建与原始设计不同的结构来修复面具，但产生相同的空间图像。 例如，可以通过注入镓原子来代替缺少的不透明材料以减少透射，并且可以将石英蚀刻到适当的深度以产生适当的相位。 在另一方面，可以使用激光器或其他装置去除缺陷周围的掩模区域，然后可以使用带电粒子束来构造掩模结构，或者产生相同空间图像的预期设计结构或替代结构 沉积和蚀刻。 例如，电子束可用于沉积石英以改变透射光的相位。 电子束也可与气体一起使用以蚀刻石英以除去包括注入的镓原子的层。 也可以通过提供可以使用例如宽离子束与注入的镓原子一起除去的牺牲层来还原或消除镓染色。 在另一方面，带电粒子束可被编程为使用从两个带电粒子束导出的来自不同角度的缺陷图像的三维信息来蚀刻缺陷。

    PHOTOLITHOGRAPHY MASK REPAIR
    6.
    发明申请
    PHOTOLITHOGRAPHY MASK REPAIR 审中-公开
    光刻胶面膜修复

    公开(公告)号：WO2004027684A2

    公开(公告)日：2004-04-01

    申请号：PCT/US2003/029521

    申请日：2003-09-18

    Applicant: FEI COMPANY ,  STEWART, Diane, K. ,  CASEY JR., J., David ,  BEATY, John ,  MUSIL, Christian, R. ,  BERGER, Steven

    Inventor： STEWART, Diane, K. ,  CASEY JR., J., David ,  BEATY, John ,  MUSIL, Christian, R. ,  BERGER, Steven

    IPC: G06K

    CPC classification number: G03F1/74 ,  G03F1/72

    Abstract: Masks can be repaired by creating a structure that is different from the original design, but that produces the same aerial image. For example, missing opaque material can be replaced by implanting gallium atoms to reduce transmission and quartz can be etched to an appropriate depth to produce the proper phase. In another aspect, a laser or other means can be used to remove an area of a mask around a defect, and then mask structures, either the intended design structures or alternate structures that produce the same aerial image, can be constructed using charged particle beam deposition and etching. For example, an electron beam can be used to deposit quartz to alter the phase of transmitted light. An electron beam can also be used with a gas to etch quartz to remove a layer including implanted gallium atoms. Gallium staining can also be reduced or eliminated by providing a sacrificial layer that can be removed, along with the implanted gallium atoms, using, for example, a broad ion beam. In another aspect, a charged particle beam can be programmed to etch a defect using three-dimensional information derived from two charged particle beams images of the defect from different angle.

    Abstract translation: 可以通过创建与原始设计不同的结构来修复面具，但是可以产生相同的空间图像。 例如，可以通过注入镓原子来替代缺失的不透明材料以减少透射，并且可以将石英蚀刻到适当的深度以产生适当的相位。 在另一方面，可以使用激光器或其他装置来去除缺陷周围的掩模区域，然后可以使用带电粒子束来构造掩模结构，即产生相同空间图像的预期设计结构或替代结构 沉积和蚀刻。 例如，电子束可用于沉积石英以改变透射光的相位。 电子束也可与气体一起使用以蚀刻石英以除去包括注入的镓原子的层。 通过使用例如宽离子束，通过提供可以与注入的镓原子一起除去的牺牲层也可以减少或消除镓染色。 在另一方面，带电粒子束可被编程为使用从两个带电粒子束导出的来自不同角度的缺陷图像的三维信息来蚀刻缺陷。

    USING SCANNING PROBE MICROSCOPE TOPOGRAPHIC DATA TO REPAIR PHOTOMASK DEFECT USING CHARGED PARTICLE BEAMS
    7.
    发明申请
    USING SCANNING PROBE MICROSCOPE TOPOGRAPHIC DATA TO REPAIR PHOTOMASK DEFECT USING CHARGED PARTICLE BEAMS 审中-公开
    使用扫描探针显微镜的地形数据修复使用充电颗粒的光斑缺陷

    公开(公告)号：WO2004015496A3

    公开(公告)日：2005-04-07

    申请号：PCT/US0325801

    申请日：2003-08-08

    Applicant: FEI CO ,  FERRANTI DAVID C ,  RAY VALERY ,  SMITH GERALD ,  MUSIL CHRISTIAN R

    Inventor： FERRANTI DAVID C ,  RAY VALERY ,  SMITH GERALD ,  MUSIL CHRISTIAN R

    IPC: B05D3/06 ,  C23C14/22 ,  C23C14/28 ,  C23C14/58 ,  G03F20060101 ,  G03F1/74 ,  H01L21/027 ,  B32B35/00

    CPC classification number: G03F1/74

    Abstract: Topographical data from a scanning probe microscope (5Pm) or similar device is used as a substitute for endpoint detection to allow accurate repair of defects in phase shift photomasks using a charged particle beam system (210-216). The topographical data from a defect area is used to create a display of a semitransparent topographical map (217), which can be superimposed over a charged particle beam image (218-222). The density of the topographical image and the alignment of the two images can be adjusted by the operator in order to accurately position the beam (224). Topographical data from an SPM can also be used to adjust charged particle beam dose for each point within the defect area based upon the elevation and surface angle at the particular point (225-230). The charge particle beam is then used to repair the defect (s) (232-234).

    Abstract translation: 使用扫描探针显微镜（5Pm）或类似装置的地形数据作为端点检测的替代品，以允许使用带电粒子束系统（210-216）精确修复相移光掩模中的缺陷。 来自缺陷区域的地形数据用于创建可叠加在带电粒子束图像（218-222）上的半透明地形图（217）的显示。 可以由操作者调整地形图像的密度和两幅图像的对准，以便准确地定位光束（224）。 SPM的地形数据还可用于根据特定点（225-230）处的高程和表面角度，调整缺陷区域内每个点的带电粒子束剂量。 然后使用电荷粒子束修复缺陷（232-234）。

    REPAIRING DEFECTS ON PHOTOMASKS USING A CHARGED PARTICLE BEAM AND TOPOGRAPHICAL DATA FROM A SCANNING PROBE MICROSCOPE
    9.
    发明申请
    REPAIRING DEFECTS ON PHOTOMASKS USING A CHARGED PARTICLE BEAM AND TOPOGRAPHICAL DATA FROM A SCANNING PROBE MICROSCOPE 审中-公开
    使用扫描探针显微镜的充电颗粒光束和地形数据修复光刻胶的缺陷

    公开(公告)号：WO2004015496A2

    公开(公告)日：2004-02-19

    申请号：PCT/US2003/025801

    申请日：2003-08-08

    Applicant: FEI COMPANY ,  FERRANTI, David, C. ,  RAY, Valery ,  SMITH, Gerald ,  MUSIL, Christian, R.

    Inventor： FERRANTI, David, C. ,  RAY, Valery ,  SMITH, Gerald ,  MUSIL, Christian, R.

    IPC: G03F

    CPC classification number: G03F1/74

    Abstract: Topographical data from a scanning probe microscope or similar device is used as a substitute for endpoint detection to allow accurate repair of defects in phase shift photomasks using a charged particle beam system. The topographical data from a defect area is used to create a display of a semitransparent topographical map, which can be superimposed over a charged particle beam image. The density of the topographical image and the alignment of the two images can be adjusted by the operator in order to accurately position the beam. Topographical data from an SPM can also be used to adjust charged particle beam dose for each point within the defect area based upon the elevation and surface angle at the particular point.

    Abstract translation: 使用扫描探针显微镜或类似装置的地形数据作为端点检测的替代物，以允许使用带电粒子束系统对相移光掩模进行精确修复。 来自缺陷区域的地形数据用于创建可叠加在带电粒子束图像上的半透明地形图的显示。 可以通过操作者调整地形图像的密度和两幅图像的对准，以便准确地定位光束。 来自SPM的地形数据也可用于根据特定点处的高程和表面角度来调整缺陷区域内每个点的带电粒子束剂量。

    PHOTOLITHOGRAPHY MASK REPAIR
    10.
    发明申请
    PHOTOLITHOGRAPHY MASK REPAIR 审中-公开
    光刻胶面膜修复

    公开(公告)号：WO2004027684A3

    公开(公告)日：2004-11-04

    申请号：PCT/US0329521

    申请日：2003-09-18

    Applicant: FEI CO ,  STEWART DIANE K ,  CASEY JR J DAVID ,  BEATY JOHN ,  MUSIL CHRISTIAN R ,  BERGER STEVEN

    Inventor： STEWART DIANE K ,  CASEY JR J DAVID ,  BEATY JOHN ,  MUSIL CHRISTIAN R ,  BERGER STEVEN

    IPC: A61N5/00 ,  C23C14/00 ,  G03F1/00 ,  G03F9/00 ,  G06K20060101 ,  G06K9/00 ,  G21G5/00 ,  H01J37/00 ,  H01L21/027

    CPC classification number: G03F1/74 ,  G03F1/72

    Abstract: Masks can be repaired by creating a structure that is different from the original design, but that produces the same aerial image. For example, missing opaque material can be replaced by implanting gallium atoms to reduce transmission and quartz can be etched to an appropriate depth to produce the proper phase. In another aspect, a laser or other means can be used to remove an area of a mask around a defect, and then mask structures, either the intended design structures or alternate structures that produce the same aerial image, can be constructed using charged particle beam deposition and etching. For example, an electron beam can be used to deposit quartz to alter the phase of transmitted light. An electron beam can also be used with a gas to etch quartz to remove a layer including implanted gallium atoms. Gallium staining can also be reduced or eliminated by providing a sacrificial layer that can be removed, along with the implanted gallium atoms, using, for example, a broad ion beam. In another aspect, a charged particle beam can be programmed to etch a defect using three-dimensional information derived from two charged particle beams images of the defect from different angle.

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