公开(公告)号：WO2008056542A1

公开(公告)日：2008-05-15

申请号：PCT/JP2007/070774

申请日：2007-10-18

Applicant: NGK INSULATORS, LTD. ,  ISOMURA, Manabu

Inventor： ISOMURA, Manabu

IPC: B01D63/06 ,  B01D69/12 ,  B01D71/02 ,  B01D65/02

CPC classification number: B01D71/024 ,  B01D63/066 ,  B01D65/02 ,  B01D67/0088 ,  B01D69/12 ,  B01D71/027 ,  B01D71/028 ,  B01D2321/32 ,  B01D2323/08

Abstract: There is disclosed a ceramic filter formed with less membrane formation times and having a water permeation performance and a separation performance. There is also disclosed a regenerating method of the ceramic filter, capable of inexpensively regenerating the ceramic filter in a case where the filter deteriorates. A ceramic filter (10) includes a porous base member (11) formed of a ceramic porous body, a carbonaceous membrane (12) formed on the porous base member (11), and an inorganic separation membrane (e.g., a silica membrane (1)) formed on the carbonaceous membrane (12). As the inorganic separation membrane, instead of the silica membrane (1), a titania membrane, a zirconia membrane, a zeolite membrane or the like may be used. In a regenerating method of the ceramic filter (10), the deteriorated ceramic filter (10) is thermally treated to remove the carbonaceous membrane (12) and the silica membrane (1) from the porous base member (11), then the carbonaceous membrane (12) is formed on the porous base member (11), and the silica membrane (1) is formed on the carbonaceous membrane (12).

Abstract translation: 公开了一种陶瓷过滤器，其具有较少的膜形成时间并且具有水渗透性能和分离性能。 还公开了一种陶瓷过滤器的再生方法，其能够在过滤器劣化的情况下廉价地再生陶瓷过滤器。 陶瓷过滤器（10）包括由陶瓷多孔体形成的多孔基底构件​​（11），形成在多孔基底构件​​（11）上的碳膜（12）和无机分离膜（例如，二氧化硅膜 ））形成在碳膜（12）上。 作为无机分离膜，代替二氧化硅膜（1），可以使用二氧化钛膜，氧化锆膜，沸石膜等。 在陶瓷过滤器（10）的再生方法中，对劣化的陶瓷过滤器（10）进行热处理以从多孔基底构件​​（11）除去碳质膜（12）和二氧化硅膜（1），然后将碳膜 （12）形成在多孔基材（11）上，在碳膜（12）上形成二氧化硅膜（1）。

公开(公告)号：WO2008050818A1

公开(公告)日：2008-05-02

申请号：PCT/JP2007/070767

申请日：2007-10-18

Applicant: NGK INSULATORS, LTD. ,  ISOMURA, Manabu ,  HISHIKI, Tatsuya ,  WADA, Ichiro

Inventor： ISOMURA, Manabu ,  HISHIKI, Tatsuya ,  WADA, Ichiro

IPC: B01D71/02 ,  C04B41/87

CPC classification number: B01D65/108 ,  B01D63/066 ,  B01D67/0048 ,  B01D71/024 ,  B01D2325/02

Abstract: There is disclosed a method of manufacturing a thin and uniform ceramic filter formed with less membrane formation times and having less defects. A ceramic sol whose average pore diameter after the sol itself has been formed into a membrane is larger than that of a ceramic separation membrane and is 10 nm or less is brought into contact with the surface of a ceramic separation membrane having an average pore diameter of 0.5 to 10 nm, and the ceramic separation membrane having the ceramic sol is dried and then fired to repair a defect portion of the ceramic separation membrane.

Abstract translation: 公开了一种制造薄且均匀的陶瓷过滤器的方法，该过滤器形成的膜形成时间较短，缺陷少。 陶瓷溶胶本身已经形成膜之后的平均孔径比陶瓷分离膜大，陶瓷分离膜的平均孔径为10μm以下的陶瓷分离膜的表面， 0.5〜10nm，将具有陶瓷溶胶的陶瓷分离膜干燥，然后烧成，以修复陶瓷分离膜的缺陷部分。

公开(公告)号：WO2007021017A1

公开(公告)日：2007-02-22

申请号：PCT/JP2006/316280

申请日：2006-08-14

Applicant: NGK INSULATORS, LTD. ,  COMMISSARIAT A L'ENERGIE ATOMIQUE ,  HORI, Yuji ,  DAUDIN, Bruno ,  BELLET-AMALRIC, Edith

Inventor： HORI, Yuji ,  DAUDIN, Bruno ,  BELLET-AMALRIC, Edith

IPC: H01S5/343

CPC classification number: H01L33/06 ,  B82Y10/00 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02631 ,  H01L33/007

Abstract: A light emitting device and its method of fabrication are provided, which have reduced constraints on the composition of a matrix region in a quantum dot structure. In formation of a quantum dot structure in a light emitting layer (5), a matrix region (an n-type conductive layer (4) and matrix layers (5m)) is formed on a growth underlying layer of AlN (an underlying layer (2) by itself or including a buffer layer (3)) whose abundance ratio of Al is higher (or whose lattice constant is smaller) than that in the matrix region by an MBE technique, thereby to realize conditions where compression stress is caused in an in-plane direction perpendicular to the direction of growth of the matrix region, and then to form island crystals (5d) by self-organization in the presence of this compression stress. The compression stress functions to inhibit an increase in lattice constant caused by the reduced abundance ratio of Al in the matrix region, i.e., to compensate for a difference in lattice constant between the island crystals and the matrix region. As a result, the compression stress functions to enlarge compositional limits for formation of the island crystals by self-organization to the Ga-rich side.

Abstract translation: 提供了一种发光器件及其制造方法，其对量子点结构中的矩阵区域的组成具有减少的限制。 在发光层（5）中形成量子点结构时，在AlN的生长下层（底层（基底层）上形成矩阵区域（n型导电层（4）和矩阵层（5m））） 2）本身或包含缓冲层（3）），其通过MBE技术使Al的丰度比（或其晶格常数小）在矩阵区域中的丰度比，从而实现在 在垂直于基质区域生长方向的面内方向，然后在存在压缩应力的情况下通过自组织形成岛状晶体（5d）。 压缩应力的作用是抑制由于基质区域中的Al的丰度比降低引起的晶格常数的增加，即补偿岛状晶体与基质区域之间的晶格常数差。 结果，压缩应力的作用是通过自组织到富镓侧来扩大形成岛状晶体的组成极限。

公开(公告)号：WO1998024130A1

公开(公告)日：1998-06-04

申请号：PCT/JP1997004371

申请日：1997-11-28

Applicant: NGK INSULATORS, LTD. ,  TAKEUCHI, Yukihisa ,  KASHIWAYA, Toshikatsu ,  TAKAHASHI, Nobuo

Inventor： NGK INSULATORS, LTD.

IPC: H01L41/09

CPC classification number: H01L41/1875 ,  H01H1/0036 ,  H01H57/00 ,  H01H2001/0042 ,  H01H2057/006 ,  H01L41/0973 ,  H01L41/098 ,  H01L41/314 ,  Y10T29/42

Abstract: There are provided an actuator part main body (26) which has an antiferroelectric film (22) and a pair of electrodes (24a and 24b) formed on one major face (surface) of the antiferroelectric film (33), a vibratory part (18) which supports the actuator part main body (26), and a fixed part (20) which supports the vibratory part (18) in such a way that it can vibrate. The antiferroelectric film (22) has a region Zt of which the mean permittivity increases in an analog manner in accordance with the voltage V impressed to the paired electrodes (24a and 24b). Specifically, p/t

Abstract translation: 设置有形成在反铁电体膜（33）的一个主面（表面）上的反铁电膜（22）和一对电极（24a和24b）的致动器部分主体（26），振动部分（18） ）和支撑所述振动部（18）的固定部（20），所述固定部以能够振动的方式支撑所述振动部。 反铁电膜（22）的平均介电常数按照施加在一对电极（24a，24b）上的电压V的模拟方式增加的区域Zt。 具体地，其中t是反铁电体膜（22）的平均膜厚，p是成对电极（24a和24b）之间的间距，p / t

公开(公告)号：WO1997017757A1

公开(公告)日：1997-05-15

申请号：PCT/JP1996003284

申请日：1996-11-08

Applicant: NGK INSULATORS, LTD. ,  TAKEUCHI, Masao ,  YAMANOUCHI, Kazuhiko ,  ODAGAWA, Hiroyuki ,  TANAKA, Mitsuhiro

Inventor： NGK INSULATORS, LTD.

IPC: H03H09/145

CPC classification number: H03H9/14547 ,  H03H9/02716 ,  H03H9/14505 ,  H03H9/14517 ,  H03H9/14552 ,  H03H9/14594

Abstract: A surface acoustic wave converter which is suitable for anisotropic piezoelectric substrates having the NSPUDT characteristic. The converter is provided with a converter structure having an exciting electrode structure (21) and a reflector structure (22) formed on an anisotropic piezoeletric substrate that is so cut that the substrate has an NSPUDT characteristic. The structure (21) is provided with a positive electrode (23) having a plurality of electrode fingers arranged at a pitch lambda ( lambda is the wavelength of the basic surface acoustic wave) and a negative electrode (24) having an electrode finger between the electrode fingers of the positive electrode in such a way that the center-to-center distances between the fingers is lambda /2. The reflector structure (22) has a plurality of electrode fingers so arranged that the center-to-center distances between the fingers are lambda /2. The distance Lg between the structures (21 and 22) is Lg=(2n+1) lambda /4 (n is a positive integer).

Abstract translation: 一种适用于具有NSPUDT特性的各向异性压电基片的表面声波转换器。 转换器设置有具有激发电极结构（21）的转换器结构和形成在各向异性压电基板上的反射器结构（22），其被切割以使得基板具有NSPUDT特性。 结构（21）设置有正极（23），其具有以间距λ（λ表示基本表面声波的波长）排列的多个电极指，以及具有电极指的负极（24） 正极的电极指，使得手指之间的中心到中心的距离为λ/ 2。 反射器结构（22）具有多个电极指，以使得手指之间的中心到中心的距离为λ/ 2。 结构（21,22）之间的距离Lg为Lg =（2n + 1）λ/ 4（n为正整数）。

公开(公告)号：WO1997001164A1

公开(公告)日：1997-01-09

申请号：PCT/JP1996001732

申请日：1996-06-21

Applicant: NGK INSULATORS, LTD. ,  SUZUKI, Tomio ,  TAKEYA, Fuminori ,  ABE, Masahiro

Inventor： NGK INSULATORS, LTD.

IPC: G11B05/66

CPC classification number: G11B5/7315 ,  C03C10/0027 ,  C03C21/001 ,  C03C21/005 ,  G11B5/8404 ,  Y10T428/24355

Abstract: A magnetic disk substrate having the body made from glass, characterized by containing light-absorbing metal elements in at least the surface region of the substrate body and having a texture formed on the surface of the body. The metal elements are diffused in the surface region as metal ions or contained in the glass ingredients as metal oxides. Preferable examples of the glass include crystallized LiO2-Al2O3-SiO2 glasses, more particularly those composed of 65-85 wt.% SiO2, 8-15 wt.% Li2O, 2-8 wt.% Al2O3, 1-5 wt.% P2O5, and 1-10 wt.% ZrO2, and containing lithium disilicate (LiO2.2SiO2) as the principal crystal phase.

Abstract translation: 一种具有由玻璃制成的主体的磁盘基片，其特征在于，在所述基板主体的至少表面区域中含有光吸收金属元件，并具有形成在所述主体表面上的纹理。 金属元素作为金属离子在表面区域扩散或作为金属氧化物包含在玻璃成分中。 玻璃的优选实例包括结晶的LiO 2 -Al 2 O 3 -SiO 2玻璃，更特别的是由65-85重量％SiO 2，8-15重量％Li 2 O，2-8重量％Al 2 O 3，1-5重量％P 2 O 5 ，和1-10重量％的ZrO 2，并且含有二硅酸锂（LiO 2·2SiO 2）作为主要结晶相。

公开(公告)号：WO1995026560A1

公开(公告)日：1995-10-05

申请号：PCT/JP1995000574

申请日：1995-03-28

Applicant: NGK INSULATORS, LTD. ,  SUZUKI, Yoshihiro ,  KUTSUNA, Eiji ,  NOZAKI, Hiroshi ,  MORI, Shigeo

Inventor： NGK INSULATORS, LTD.

IPC: H01B17/00

CPC classification number: H01B17/16 ,  H01B17/42

Abstract: A conductive insulator which comprises an insulator body, and a metal member fixed to the insulator body via cement having high electric resistance. The exposed surface of the insulator body is covered with a first conductive layer, while the area hidden under the cement is covered at least in part with a second conductive layer. The second conductive layer is covered with a conductive film which is softer than the second conductive layer. The second conductive layer is electrically connected to the first conductive layer. This conductive insulator has a simple construction, and is manufactured simply, the insulator being able to secure the conductivity of the cement of high electric resistance at a level of practical use thereof.

Abstract translation: 一种导电绝缘体，其包括绝缘体，以及通过具有高电阻的水泥固定到绝缘体的金属构件。 绝缘体的暴露表面被第一导电层覆盖，而水泥下方的区域至少部分被第二导电层覆盖。 第二导电层被比第二导电层软的导电膜覆盖。 第二导电层电连接到第一导电层。 该导电绝缘体具有简单的结构，并且简单地制造，绝缘子能够将高电阻的水泥的导电性确保在其实际应用的水平。

公开(公告)号：WO1995018873A1

公开(公告)日：1995-07-13

申请号：PCT/JP1994002253

申请日：1994-12-27

Applicant: NGK INSULATORS, LTD. ,  ISHIKAWA, Shuhei ,  HIRAMITSU, Hiroyuki ,  ISHIGURO, Yoshihisa ,  YASHIRO, Kazumasa

Inventor： NGK INSULATORS, LTD.

IPC: C22C09/00

CPC classification number: C22C9/01 ,  C22C9/00 ,  C22C9/06 ,  C22F1/08

Abstract: An alloy containing a relatively small amount of Be to decrease its deformation when heat-treated. The decrease in strength of the alloy due to the decreased Be content is compensated for by Si and Al solid solution hardening and NiBe and CoBe precipitation hardening. The precipitation of such intermetallic compounds also improves machinability and heat resistance and allows the aging conditions to be more flexible. Therefore, the present invention can economically provide a beryllium copper alloy having excellent strength, machinability and heat resistance and particularly, can drastically reduce a burden on the user side as to an aging material.

Abstract translation: 含有相对少量的Be的合金在热处理时减少其变形。 通过Si和Al固溶硬化和NiBe和CoBe沉淀硬化来补偿由于Be含量降低导致的合金强度的降低。 这种金属间化合物的沉淀也提高了机械加工性和耐热性，并且使老化条件更加灵活。 因此，本发明可以经济地提供具有优异的强度，机械加工性和耐热性的铍铜合金，特别是可以显着降低使用者对老化材料的负担。

公开(公告)号：WO1992004104A1

公开(公告)日：1992-03-19

申请号：PCT/JP1991001186

申请日：1991-09-05

Applicant: NKK CORPORATION ,  NGK INSULATORS, LTD. ,  HIRAOKA, Masakatsu ,  IWASAKI, Toshihiko ,  TSUBOI, Haruhito ,  NOTO, Takashi ,  YAMAGISHI, Miki ,  YOKOYAMA, Takashi ,  SUZUKI, Yasuo ,  IMOTO, Yoshinori ,  HARA, Katsunosuke ,  ISHIKAWA, Osamu

Inventor： NKK CORPORATION ,  NGK INSULATORS, LTD.

IPC: B01D53/36

CPC classification number: B01D53/8662

Abstract: A method for removing toxic organochlorine compounds such as polychlorodibenzodioxin and polychlorodibenzofuran from combustion exhaust gas with a high efficiency, which comprises decomposing organochlorine compounds contained in a combustion exhaust gas at a temperature ranging from 150 to 350 °C by bringing the compounds into contact with a catalyst comprising at least one member selected from the group consisting of platinum, palladium, ruthenium, manganese, copper, chromium and iron, and oxides thereof and supported on a carrier containing at least titanium oxide, aluminum oxide and silicon oxide.

公开(公告)号：WO2013137486A3

公开(公告)日：2014-02-27

申请号：PCT/JP2013058182

申请日：2013-03-14

Applicant: NGK INSULATORS LTD

Inventor： TAKAGI MARIKO

IPC: B01D46/00 ,  B01D46/24 ,  B01D46/54 ,  B01D51/10 ,  B01D53/22 ,  B01D53/26 ,  B01D63/06 ,  C10L3/10

CPC classification number: B01D71/028 ,  B01D46/0023 ,  B01D46/0036 ,  B01D46/2429 ,  B01D46/543 ,  B01D53/226 ,  B01D53/268 ,  B01D61/58 ,  B01D63/066 ,  B01D2253/102 ,  B01D2253/108 ,  B01D2253/3425 ,  B01D2311/04 ,  B01D2311/2626 ,  B01D2317/025 ,  B01D2317/06 ,  C10L3/10 ,  C10L2290/548

Abstract: There is disclosed a pretreatment device for membrane separation including a honeycomb structure having porous partition walls with which a plurality of cells extending from one end surface to the other end surface are formed to become through channels of a fluid, and a storage container in which the honeycomb structure is stored and which has an inflow port and an outflow port of the fluid, and the partition walls include an adsorbent as a main component, a membrane-like adsorbent is disposed on the surfaces of the partition walls, or the partition walls include the adsorbent as the main component and the membrane-like adsorbent is disposed on the surfaces of the partition walls. The pretreatment device for membrane separation is disclosed in which impurities in the fluid to be treated which influence (adversely affect) a separation membrane are efficiently adsorbed, to enable suppression of deterioration of the separation membrane.

Abstract translation: 公开了一种用于膜分离的预处理装置，其包括具有多孔分隔壁的蜂窝结构体，多个分隔壁从多个端面到另一端表面延伸形成多个细胞，以形成通过流体的通道;以及储存容器， 蜂窝结构被储存并且具有流体的流入口和流出口，并且分隔壁包括吸附剂作为主要成分，膜状吸附剂设置在隔壁的表面上，或者隔壁包括 作为主要成分的吸附剂和膜状吸附剂设置在隔壁的表面上。 公开了用于膜分离的预处理装置，其中有效地吸附影响（不利影响）分离膜的待处理流体中的杂质，从而能够抑制分离膜的劣化。