Abstract:
A system and method for aligning clock signals in a DDR DRAM module is disclosed. The system includes a phase detector circuitry, a controllable delay circuit, a first delay circuit and a synchronizing circuit. A clock signal is simultaneously transmitted through the first delay circuit and the controllable delay circuit. Subsequently, the clock signals transmitted through the first delay circuit and the controllable delay circuit are captured at the output thereof, and fed as inputs to the phase detector circuitry. The phase detector circuitry determines whether the clock signals are in phase, and accordingly adjusts the delay associated with the controllable delay circuit until the two clock signals are determined to be in phase.
Abstract:
The present disclosure envisages an asynchronous clock gating circuitry and a method for designing the asynchronous clock gating circuitry. The asynchronous clock gating circuitry could be placed at the very beginning of the clock network, given its design and implementation logic. The asynchronous clock gating circuitry helps meet the timing requirement on the enable pin thereof. The asynchronous clock gating circuitry avoids cumbersome replication of clock gating circuitry during physical implementation of the (circuit) design, and further helps reduce the power consumption levels in sequential circuits.
Abstract:
A method for automatic calibration of read latency of a memory module is envisaged. The read latency is initially set to a default maximum value. The default maximum value is equivalent to the number of clock cycles required to complete a data read operation. A data pattern to be read from the memory module in consideration of the default maximum value is identified. A memory read operation is preformed, and a first data pattern is captured, in accordance with the default maximum value. The identified data pattern is compared with the first data pattern, and the default maximum value is iteratively calibrated based on the comparison thereof. Aforementioned steps are repeated across a plurality of memory read operations, and variations in the maximum default value are tracked, and an average maximum value is calculated based thereupon. The average maximum value is assigned as the read latency for the memory module.
Abstract:
A method and system for cycle accurate data transfer between skewed source synchronous clocks is envisaged. The procedure starts through reset. On reset, both the write and read address registers are set to point to location 0. Source clock is stopped to disable active clock edges to both write and read address registers during the reset procedure. The source clock is subsequently started to deliver active edges to both write and read address registers. On every active source clock edge, data is pushed into the data register based on the location pointed by write address register. On every skewed active clock edge, data is read from the data register based on the address pointed by read address register. Due to the delayed nature of clock reaching the read address register, write address register increments first and stores data into the data register.
Abstract:
A method and system for multi cycle write leveling are disclosed. At least three data patterns are written into consecutive address locations of a memory device via corresponding write operations. Subsequently, predetermined beats of data strobe signals corresponding to certain predetermined write operations are gated. Based at least on the gating of predetermined data beats, a target data pattern to be read from the memory device is determined. Subsequently, a data read operation is performed, and the data written onto a specific address location of the memory device is read there from. The data thus read from the memory device is compared with the target pattern. Based on the comparison of the data read from the memory device with the target pattern, a delay cycle between the data strobe signals and clock signal is determined, and the data strobe signal and clock signal are accordingly calibrated.
Abstract:
A system and method for aligning clock signals in a DDR DRAM module is disclosed. The system includes a phase detector circuitry, a controllable delay circuit, a first delay circuit and a synchronizing circuit. A clock signal is simultaneously transmitted through the first delay circuit and the controllable delay circuit. Subsequently, the clock signals transmitted through the first delay circuit and the controllable delay circuit are captured at the output thereof, and fed as inputs to the phase detector circuitry. The phase detector circuitry determines whether the clock signals are in phase, and accordingly adjusts the delay associated with the controllable delay circuit until the two clock signals are determined to be in phase.
Abstract:
A method and system for multi cycle write leveling are disclosed. At least three data patterns are written into consecutive address locations of a memory device via corresponding write operations. Subsequently, predetermined beats of data strobe signals corresponding to certain predetermined write operations are gated. Based at least on the gating of predetermined data beats, a target data pattern to be read from the memory device is determined. Subsequently, a data read operation is performed, and the data written onto a specific address location of the memory device is read there from. The data thus read from the memory device is compared with the target pattern. Based on the comparison of the data read from the memory device with the target pattern, a delay cycle between the data strobe signals and clock signal is determined, and the data strobe signal and clock signal are accordingly calibrated.
Abstract:
A method and system for cycle accurate data transfer between skewed source synchronous clocks is envisaged. The procedure starts through reset. On reset, both the write and read address registers are set to point to location 0. Source clock is stopped to disable active clock edges to both write and read address registers during the reset procedure. The source clock is subsequently started to deliver active edges to both write and read address registers. On every active source clock edge, data is pushed into the data register based on the location pointed by write address register. On every skewed active clock edge, data is read from the data register based on the address pointed by read address register. Due to the delayed nature of clock reaching the read address register, write address register increments first and stores data into the data register.
Abstract:
The present disclosure envisages an asynchronous clock gating circuitry and a method for designing the asynchronous clock gating circuitry. The asynchronous clock gating circuitry could be placed at the very beginning of the clock network, given its design and implementation logic. The asynchronous clock gating circuitry helps meet the timing requirement on the enable pin thereof. The asynchronous clock gating circuitry avoids cumbersome replication of clock gating circuitry during physical implementation of the (circuit) design, and further helps reduce the power consumption levels in sequential circuits.
Abstract:
A method for automatic calibration of read latency of a memory module is envisaged. The read latency is initially set to a default maximum value. The default maximum value is equivalent to the number of clock cycles required to complete a data read operation. A data pattern to be read from the memory module in consideration of the default maximum value is identified. A memory read operation is preformed, and a first data pattern is captured, in accordance with the default maximum value. The identified data pattern is compared with the first data pattern, and the default maximum value is iteratively calibrated based on the comparison thereof. Aforementioned steps are repeated across a plurality of memory read operations, and variations in the maximum default value are tracked, and an average maximum value is calculated based thereupon. The average maximum value is assigned as the read latency for the memory module.