公开(公告)号：WO2023067580A1

公开(公告)日：2023-04-27

申请号：PCT/IB2022/060178

申请日：2022-10-24

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： POIS, Heath ,  LEE, Wei Ti ,  WARAD, Laxmi ,  KISLITSYN, Dmitry ,  LUND, Parker ,  TSENG, Benny ,  CHEN, James ,  SINGH, Saurabh

IPC: G01N23/223 ,  G01B15/02 ,  H01L21/66

Abstract: A system to characterize a film layer within a measurement box is disclosed. The system obtains a first mixing fraction corresponding to a first X-ray beam, the mixing fraction represents a fraction of the first X-ray beam inside a measurement box of a wafer sample, the measurement box represents a bore structure disposed over a substrate and having a film layer disposed inside the bore structure. The system obtains a contribution value for the measurement box corresponding to the first X-ray beam, the contribution value representing a species signal outside the measurement box that contributes to a same species signal inside the measurement box. The system obtains a first measurement detection signal corresponding to a measurement of the measurement box using the first X-ray beam. The system determines a measurement value of the film layer based on the first measurement detection signal, the contribution value, and the first mixing fraction.

公开(公告)号：WO2020190643A1

公开(公告)日：2020-09-24

申请号：PCT/US2020/022407

申请日：2020-03-12

Applicant: NOVA MEASURING INSTRUMENTS, INC.

Inventor： POIS, Heath, A. ,  WARAD, Laxmi ,  RANGARAJAN, Srinivasan

IPC: G01N23/085 ,  G01N23/22 ,  G01N23/223 ,  G01N23/2273 ,  G01N23/02 ,  G01N23/083 ,  G01B15/00 ,  G01B15/02 ,  G01B11/00 ,  G01B11/06

Abstract: Quantification of the passivation and the selectivity in deposition process is disclosed. The passivation is evaluated by calculating film thicknesses on pattern lines and spaces. An XPS signal is used, which is normalized with X-ray flux number. The method is efficient for calculating thickness in selective deposition process, wherein the thickness can be used as metric to measure selectivity. Measured photoelectrons for each of the materials can be expressed as a function of the thickness of the material overlaying it, adjusted by material constant and effective attenuation length. In selective deposition over a patterned wafer, the three expressions can be solved to determine the thickness of the intended deposition and the thickness of any unintended deposition over passivated pattern.

公开(公告)号：WO2018208318A1

公开(公告)日：2018-11-15

申请号：PCT/US2017/032447

申请日：2017-05-12

Applicant: NOVA MEASURING INSTRUMENTS, INC.

Inventor： BEVIS, Christopher F. ,  LIU, Yungman Alan ,  REED, David Allen ,  CHEIFETZ, Eli ,  WEINGARTEN, Amit ,  KADYSHEVITCH, Alexander

IPC: H01J49/02 ,  H01J49/40

Abstract: An ion detector for secondary ion mass spectrometer, the detector having an electron emission plate coupled to a first electrical potential and configured to emit electrons upon incidence on ions; a scintillator coupled to a second electrical potential, different from the first electrical potential, the scintillator having a front side facing the electron emission plate and a backside, the scintillator configured to emit photons from the backside upon incidence of electrons on the front side; a lightguide coupled to the backside of the scintillator and confining flow of photons emitted from the backside of the scintillator; and a solid-state photomultiplier coupled to the light guide and having an output configured to output electrical signal corresponding to incidence of photons from the lightguide. A SIMS system includes a plurality of such detectors movable arranged over the focal plane of a mass analyzer.

公开(公告)号：WO2021079307A1

公开(公告)日：2021-04-29

申请号：PCT/IB2020/059926

申请日：2020-10-22

Applicant: NOVA MEASURING INSTRUMENTS, INC.

Inventor： REED, David. A ,  NEWCOME, Bruce H. ,  SCHUELER, Bruno W.

IPC: H01J35/08 ,  H01J35/16

Abstract: The present invention is intended to provide improved patterned X-ray emitting targets as well as X-ray sources that include patterned X-ray emitting targets as well as X-ray reflectance scatterometry (XRS) systems and also including X-ray photoelectron spectroscopy (XPS) systems and X-ray fluorescence (XRF) systems which employ such X-ray emitting targets.