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    INTEGRATED PLATFORM FOR IN-SITU DOPING AND ACTIVATION OF SUBSTRATES
    1.
    发明申请
    INTEGRATED PLATFORM FOR IN-SITU DOPING AND ACTIVATION OF SUBSTRATES 审中-公开
    集成平台，用于基站的切割和激活

    公开(公告)号：WO2012036963A3

    公开(公告)日：2012-05-31

    申请号：PCT/US2011050759

    申请日：2011-09-08

    Applicant: APPLIED MATERIALS INC ,  SANTHANAM KARTIK ,  HILKENE MARTIN A ,  SCOTNEY-CASTLE MATTHEW D ,  PORSHNEV PETER I ,  SRINIVASAN SWAMINATHAN ,  RAMAMURTHY SUNDAR

    Inventor： SANTHANAM KARTIK ,  HILKENE MARTIN A ,  SCOTNEY-CASTLE MATTHEW D ,  PORSHNEV PETER I ,  SRINIVASAN SWAMINATHAN ,  RAMAMURTHY SUNDAR

    IPC: H01L21/265 ,  H01L21/22

    CPC classification number: H01L21/2236 ,  H01L21/324 ,  H01L21/67207

    Abstract: An integrated platform for processing substrates, comprising: a vacuum substrate transfer chamber; a doping chamber coupled to the vacuum substrate transfer chamber, the doping chamber configured to implant or deposit dopant elements in or on a surface of a substrate; a dopant activation chamber coupled to the vacuum substrate transfer chamber, the dopant activation chamber configured to anneal the substrate and activate the dopant elements; and a controller configured to control the integrated platform, the controller comprising a computer readable media having instructions stored thereon that, when executed by the controller, causes the integrated platform to perform a method, the method comprising: doping a substrate with one or more dopant elements in the doping chamber; transferring the substrate under vacuum to the dopant activation chamber; and annealing the substrate in the dopant activation chamber to activate the dopant elements.

    Abstract translation: 一种用于处理衬底的集成平台，包括：真空衬底传送室; 耦合到所述真空衬底传送室的掺杂室，所述掺杂室被配置为将掺杂元素注入或沉积在衬底的表面中或其上; 掺杂剂激活室，其耦合到所述真空衬底传送室，所述掺杂剂激活室被配置为退火所述衬底并激活所述掺杂元素; 以及控制器，被配置为控制所述集成平台，所述控制器包括具有存储在其上的指令的计算机可读介质，当由所述控制器执行时，所述控制器使所述集成平台执行方法，所述方法包括：使用一个或多个掺杂剂 掺杂室中的元素; 将衬底真空转移到掺杂剂活化室; 以及退火所述掺杂剂激活室中的所述衬底以激活所述掺杂元素。

    INTEGRATED PLATFORM FOR IN-SITU DOPING AND ACTIVATION OF SUBSTRATES
    2.
    发明申请
    INTEGRATED PLATFORM FOR IN-SITU DOPING AND ACTIVATION OF SUBSTRATES 审中-公开
    用于原位掺杂和衬底激活的集成平台

    公开(公告)号：WO2012036963A2

    公开(公告)日：2012-03-22

    申请号：PCT/US2011/050759

    申请日：2011-09-08

    Applicant: APPLIED MATERIALS, INC. ,  SANTHANAM, Kartik ,  HILKENE, Martin A. ,  SCOTNEY-CASTLE, Matthew D. ,  PORSHNEV, Peter I. ,  SRINIVASAN, Swaminathan ,  RAMAMURTHY, Sundar

    Inventor： SANTHANAM, Kartik ,  HILKENE, Martin A. ,  SCOTNEY-CASTLE, Matthew D. ,  PORSHNEV, Peter I. ,  SRINIVASAN, Swaminathan ,  RAMAMURTHY, Sundar

    IPC: H01L21/265 ,  H01L21/22

    CPC classification number: H01L21/2236 ,  H01L21/324 ,  H01L21/67207

    Abstract: An integrated platform for processing substrates, comprising: a vacuum substrate transfer chamber; a doping chamber coupled to the vacuum substrate transfer chamber, the doping chamber configured to implant or deposit dopant elements in or on a surface of a substrate; a dopant activation chamber coupled to the vacuum substrate transfer chamber, the dopant activation chamber configured to anneal the substrate and activate the dopant elements; and a controller configured to control the integrated platform, the controller comprising a computer readable media having instructions stored thereon that, when executed by the controller, causes the integrated platform to perform a method, the method comprising: doping a substrate with one or more dopant elements in the doping chamber; transferring the substrate under vacuum to the dopant activation chamber; and annealing the substrate in the dopant activation chamber to activate the dopant elements.

    Abstract translation: 一种用于处理衬底的集成平台，包括：真空衬底传送室; 耦合到所述真空衬底传输室的掺杂室，所述掺杂室被配置成将掺杂剂元素注入或沉积在衬底的表面中或衬底上; 耦合到所述真空衬底传输室的掺杂剂激活室，所述掺杂剂激活室被配置为退火所述衬底并激活所述掺杂剂元素; 以及配置成控制所述集成平台的控制器，所述控制器包括其上存储有指令的计算机可读介质，所述指令在由所述控制器执行时使所述集成平台执行方法，所述方法包括：用一种或多种掺杂剂 掺杂室中的元素; 在真空下将衬底转移到掺杂剂激活室; 以及在掺杂剂活化室中退火衬底以激活掺杂剂元素。

    BACKSIDE RAPID THERMAL PROCESSING OF PATTERNED WAFERS
    3.
    发明申请
    BACKSIDE RAPID THERMAL PROCESSING OF PATTERNED WAFERS 审中-公开
    背面快速热处理的图案波形

    公开(公告)号：WO2005093353A1

    公开(公告)日：2005-10-06

    申请号：PCT/US2005/004521

    申请日：2005-02-14

    Applicant: APPLIED MATERIALS, INC. ,  ADERHOLD, Wolfgang ,  RAMAMURTHY, Sundar ,  HUNTER, Aaron

    Inventor： ADERHOLD, Wolfgang ,  RAMAMURTHY, Sundar ,  HUNTER, Aaron

    IPC: F26B19/00

    CPC classification number: H01L21/67115 ,  F27B17/0025 ,  F27D19/00 ,  F27D21/0014

    Abstract: A apparatus (60) and method of thermally treating a wafer (12) or other substrate, such as rapid thermal processing (RTP). An array (24) of radiant lamps (26) directs radiation to the back side of a wafer to heat the wafer. The front side of the wafer on which the patterned integrated circuits (16) are being formed faces a radiant reflector (28). The wafer is thermally monitored (40, 42) for temperature and reflectivity from the side of the reflector. When the lamps are above the wafer, an edge ring (64) supports the wafer in its edge exclusion zone (52). Alternatively (FIG.8), a reactor (100) includes upwardly directed lamps (26) and a reflector (28) above and facing the front side of the wafer.

    Abstract translation: 一种热处理晶片（12）或其它基板（例如快速热处理（RTP））的设备（60）和方法。 辐射灯（26）的阵列（24）将辐射引导到晶片的背面以加热晶片。 其上形成图案化集成电路（16）的晶片的正面面向辐射反射器（28）。 对来自反射器侧的温度和反射率进行热监测（40,42）。 当灯在晶片上方时，边缘环（64）在其边缘排除区（52）中支撑晶片。 或者（图8），反应器（100）包括向上指向的灯（26）和位于晶片正面之上并面向晶片前侧的反射器（28）。

    MANAGING THERMAL BUDGET IN ANNEALING OF SUBSTRATES
    5.
    发明申请
    MANAGING THERMAL BUDGET IN ANNEALING OF SUBSTRATES 审中-公开
    管理衬底退火中的热预算

    公开(公告)号：WO2010033389A1

    公开(公告)日：2010-03-25

    申请号：PCT/US2009/055838

    申请日：2009-09-03

    Applicant: APPLIED MATERIALS, INC. ,  MOFFATT, Stephen ,  MAYUR, Abhilash, J. ,  RAMAMURTHY, Sundar ,  RANISH, Joseph ,  HUNTER, Aaron

    Inventor： MOFFATT, Stephen ,  MAYUR, Abhilash, J. ,  RAMAMURTHY, Sundar ,  RANISH, Joseph ,  HUNTER, Aaron

    IPC: H01L21/324

    CPC classification number: H01L21/324 ,  H01L21/67115

    Abstract: A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.

    Abstract translation: 提供了一种处理基板的方法和装置。 衬底位于热处理室中的支撑件上。 电磁辐射被引向衬底以退火衬底的一部分。 其他电磁辐射被引向衬底以预热衬底的一部分。 预热减少了预热区域和退火区域之间的边界处的热应力。 根据具体实施方案的需要，预期任何数量的退火和预热区域具有变化的形状和温度曲线。 可以使用任何方便的电磁辐射源，例如激光器，加热灯，白光灯或闪光灯。

    SUBSTRATE PROCESSING PLATFORM ALLOWING PROCESSING IN DIFFERENT AMBIENTS
    8.
    发明申请
    SUBSTRATE PROCESSING PLATFORM ALLOWING PROCESSING IN DIFFERENT AMBIENTS 审中-公开
    基板处理平台允许在不同的环境中进行处理

    公开(公告)号：WO2006115857A3

    公开(公告)日：2007-03-08

    申请号：PCT/US2006014226

    申请日：2006-04-14

    Applicant: APPLIED MATERIALS INC ,  YOKOTA YOSHITAKA ,  MORITZ KIRK ,  MA KAI ,  CHANG WEN ,  PARASIRIS ANASTANSIOS ,  SHARMA ROHIT ,  TJANDRA AGUS ,  ACHUTHARAMAN VENDAPURAM ,  RAMAMURTHY SUNDAR ,  THAKUR RANDHIR

    Inventor： YOKOTA YOSHITAKA ,  MORITZ KIRK ,  MA KAI ,  CHANG WEN ,  PARASIRIS ANASTANSIOS ,  SHARMA ROHIT ,  TJANDRA AGUS ,  ACHUTHARAMAN VENDAPURAM ,  RAMAMURTHY SUNDAR ,  THAKUR RANDHIR

    IPC: H01L21/332

    CPC classification number: H01L21/67207 ,  H01L21/67115 ,  H01L21/67778

    Abstract: A semiconductor wafer processing system (40) including a factory interface (26) operating at atmospheric pressure and mounting plural wafer cassettes and further including plural wafer processing chambers (42, 44) mounted on a frame (16) and connected to the factory interface through respective slit valves. A robot in the factory interface can transfer wafers (32) between the cassettes and the processing chambers. At least one of the processing chambers can operate at reduced pressure and is pumped by a vacuum pump (46) mounted on the frame. The processing chamber may be a rapid thermal processing chamber (52) including an array of lamps (66) irradiating a processing volume (100) through a window (60). The lamphead is vacuum pumped to a pressure approximating that in the processing volume. A multi-step process may be performed with different pressures. The invention also includes a wafer access port (202) of a thermal processing chamber which can flow (210) an inert gas in outside of the slit valve to thereby form a gas curtain outside of the opened slit (206) to prevent the out flow of toxic processing gases.

    Abstract translation: 一种半导体晶片处理系统（40），包括在大气压下工作的工厂接口（26）并安装多个晶片盒，并且还包括安装在框架（16）上并连接到工厂接口的多个晶片处理室（42,44），通过 各自的狭缝阀。 工厂界面中的机器人可以在盒和处理室之间传送晶片（32）。 至少一个处理室可以在减压下操作并由安装在框架上的真空泵（46）泵送。 处理室可以是快速热处理室（52），其包括通过窗口（60）照射处理容积（100）的灯阵列（66）。 灯头被真空泵送到接近处理量的压力。 可以用不同的压力进行多步骤过程。 本发明还包括热处理室的晶片入口（202），其能够在狭缝阀的外侧流动（210）惰性气体，从而在打开的狭缝（206）外部形成气幕，以防止流出 的有毒加工气体。

    DUAL PLASMA SOURCE, LAMP HEATED PLASMA CHAMBER
    9.
    发明申请
    DUAL PLASMA SOURCE, LAMP HEATED PLASMA CHAMBER 审中-公开
    双等离子体源，灯加热等离子体室

    公开(公告)号：WO2012118520A1

    公开(公告)日：2012-09-07

    申请号：PCT/US2011/046000

    申请日：2011-07-29

    Applicant: APPLIED MATERIALS, INC. ,  OLSEN, Christopher S. ,  LAI, Canfeng ,  RAMAMURTHY, Sundar ,  SWENBERG, Johanes ,  LIU, Wei

    Inventor： OLSEN, Christopher S. ,  LAI, Canfeng ,  RAMAMURTHY, Sundar ,  SWENBERG, Johanes ,  LIU, Wei

    IPC: H01L21/316 ,  H01L21/205

    CPC classification number: C23C16/517 ,  H01J37/32082 ,  H01J37/32357

    Abstract: Methods and apparatus for processing semiconductor substrates are described. A processing chamber includes a substrate support with an in-situ plasma source, which may be an inductive, capacitive, microwave, or millimeter wave source, facing the substrate support and a radiant heat source, which may be a bank of thermal lamps, spaced apart from the substrate support. The support may be between the in-situ plasma source and the radiant heat source, and may rotate. A method or processing a substrate includes forming an oxide layer by exposing the substrate to a plasma generated in a process chamber, performing a plasma nitridation process on the substrate in the chamber, thermally treating the substrate using a radiant heat source disposed in the chamber while exposing the substrate to oxygen radicals formed outside the chamber, and forming an electrode by exposing the substrate to a plasma generated in the chamber.

    Abstract translation: 描述了用于处理半导体衬底的方法和设备。 处理室包括具有原位等离子体源的衬底支撑件，其可以是面向衬底支撑件的电感，电容，微波或毫米波源，辐射热源可以是一排热灯，间隔开 除了基板支撑。 支撑件可以在原位等离子体源和辐射热源之间，并且可以旋转。 一种方法或处理衬底包括通过将衬底暴露于在处理室中产生的等离子体来形成氧化物层，在腔室中的衬底上进行等离子体氮化处理，使用设置在腔室中的辐射热源热处理衬底，同时 将衬底暴露于室外形成的氧自由基，并通过将衬底暴露于腔室中产生的等离子体而形成电极。

    SUBSTRATE PROCESSING PLATFORM ALLOWING PROCESSING IN DIFFERENT AMBIENTS
    10.
    发明申请
    SUBSTRATE PROCESSING PLATFORM ALLOWING PROCESSING IN DIFFERENT AMBIENTS 审中-公开
    基板处理平台允许在不同的环境中进行处理

    公开(公告)号：WO2006115857A2

    公开(公告)日：2006-11-02

    申请号：PCT/US2006/014226

    申请日：2006-04-14

    Applicant: APPLIED MATERIALS, INC. ,  YOKOTA, Yoshitaka ,  MORITZ, Kirk ,  MA, Kai ,  CHANG, Wen ,  PARASIRIS, Anastansios ,  SHARMA, Rohit ,  TJANDRA, Agus ,  ACHUTHARAMAN, Vendapuram ,  RAMAMURTHY, Sundar ,  THAKUR, Randhir

    Inventor： YOKOTA, Yoshitaka ,  MORITZ, Kirk ,  MA, Kai ,  CHANG, Wen ,  PARASIRIS, Anastansios ,  SHARMA, Rohit ,  TJANDRA, Agus ,  ACHUTHARAMAN, Vendapuram ,  RAMAMURTHY, Sundar ,  THAKUR, Randhir

    IPC: H01L21/00

    CPC classification number: H01L21/67207 ,  H01L21/67115 ,  H01L21/67778

    Abstract: A semiconductor wafer processing system (40) including a factory interface (26) operating at atmospheric pressure and mounting plural wafer cassettes and further including plural wafer processing chambers (42, 44) mounted on a frame (16) and connected to the factory interface through respective slit valves. A robot in the factory interface can transfer wafers (32) between the cassettes and the processing chambers. At least one of the processing chambers can operate at reduced pressure and is pumped by a vacuum pump (46) mounted on the frame. The processing chamber may be a rapid thermal processing chamber (52) including an array of lamps (66) irradiating a processing volume (100) through a window (60). The lamphead is vacuum pumped to a pressure approximating that in the processing volume. A multi-step process may be performed with different pressures. The invention also includes a wafer access port (202) of a thermal processing chamber which can flow (210) an inert gas in outside of the slit valve to thereby form a gas curtain outside of the opened slit (206) to prevent the out flow of toxic processing gases.

    Abstract translation: 一种半导体晶片处理系统（40），包括在大气压下工作的工厂接口（26）并安装多个晶片盒，并且还包括安装在框架（16）上并连接到工厂接口的多个晶片处理室（42,44） 各自的狭缝阀。 工厂界面中的机器人可以在盒和处理室之间传送晶片（32）。 至少一个处理室可以在减压下操作并由安装在框架上的真空泵（46）泵送。 处理室可以是快速热处理室（52），其包括通过窗口（60）照射处理容积（100）的一列阵列（66）。 灯头被真空泵送到接近处理量的压力。 可以用不同的压力进行多步骤过程。 本发明还包括热处理室的晶片入口（202），其能够在狭缝阀的外侧流动（210）惰性气体，从而在打开的狭缝（206）外部形成气幕，以防止流出 的有毒加工气体。

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