公开(公告)号：WO2012036963A3

公开(公告)日：2012-05-31

申请号：PCT/US2011050759

申请日：2011-09-08

申请人： APPLIED MATERIALS INC ,  SANTHANAM KARTIK ,  HILKENE MARTIN A ,  SCOTNEY-CASTLE MATTHEW D ,  PORSHNEV PETER I ,  SRINIVASAN SWAMINATHAN ,  RAMAMURTHY SUNDAR

发明人： SANTHANAM KARTIK ,  HILKENE MARTIN A ,  SCOTNEY-CASTLE MATTHEW D ,  PORSHNEV PETER I ,  SRINIVASAN SWAMINATHAN ,  RAMAMURTHY SUNDAR

IPC分类号： H01L21/265 ,  H01L21/22

CPC分类号： H01L21/2236 ,  H01L21/324 ,  H01L21/67207

摘要： An integrated platform for processing substrates, comprising: a vacuum substrate transfer chamber; a doping chamber coupled to the vacuum substrate transfer chamber, the doping chamber configured to implant or deposit dopant elements in or on a surface of a substrate; a dopant activation chamber coupled to the vacuum substrate transfer chamber, the dopant activation chamber configured to anneal the substrate and activate the dopant elements; and a controller configured to control the integrated platform, the controller comprising a computer readable media having instructions stored thereon that, when executed by the controller, causes the integrated platform to perform a method, the method comprising: doping a substrate with one or more dopant elements in the doping chamber; transferring the substrate under vacuum to the dopant activation chamber; and annealing the substrate in the dopant activation chamber to activate the dopant elements.

摘要翻译： 一种用于处理衬底的集成平台，包括：真空衬底传送室; 耦合到所述真空衬底传送室的掺杂室，所述掺杂室被配置为将掺杂元素注入或沉积在衬底的表面中或其上; 掺杂剂激活室，其耦合到所述真空衬底传送室，所述掺杂剂激活室被配置为退火所述衬底并激活所述掺杂元素; 以及控制器，被配置为控制所述集成平台，所述控制器包括具有存储在其上的指令的计算机可读介质，当由所述控制器执行时，所述控制器使所述集成平台执行方法，所述方法包括：使用一个或多个掺杂剂 掺杂室中的元素; 将衬底真空转移到掺杂剂活化室; 以及退火所述掺杂剂激活室中的所述衬底以激活所述掺杂元素。

公开(公告)号：WO2012036963A2

公开(公告)日：2012-03-22

申请号：PCT/US2011/050759

申请日：2011-09-08

申请人： APPLIED MATERIALS, INC. ,  SANTHANAM, Kartik ,  HILKENE, Martin A. ,  SCOTNEY-CASTLE, Matthew D. ,  PORSHNEV, Peter I. ,  SRINIVASAN, Swaminathan ,  RAMAMURTHY, Sundar

发明人： SANTHANAM, Kartik ,  HILKENE, Martin A. ,  SCOTNEY-CASTLE, Matthew D. ,  PORSHNEV, Peter I. ,  SRINIVASAN, Swaminathan ,  RAMAMURTHY, Sundar

IPC分类号： H01L21/265 ,  H01L21/22

CPC分类号： H01L21/2236 ,  H01L21/324 ,  H01L21/67207

摘要： An integrated platform for processing substrates, comprising: a vacuum substrate transfer chamber; a doping chamber coupled to the vacuum substrate transfer chamber, the doping chamber configured to implant or deposit dopant elements in or on a surface of a substrate; a dopant activation chamber coupled to the vacuum substrate transfer chamber, the dopant activation chamber configured to anneal the substrate and activate the dopant elements; and a controller configured to control the integrated platform, the controller comprising a computer readable media having instructions stored thereon that, when executed by the controller, causes the integrated platform to perform a method, the method comprising: doping a substrate with one or more dopant elements in the doping chamber; transferring the substrate under vacuum to the dopant activation chamber; and annealing the substrate in the dopant activation chamber to activate the dopant elements.

摘要翻译： 一种用于处理衬底的集成平台，包括：真空衬底传送室; 耦合到所述真空衬底传输室的掺杂室，所述掺杂室被配置成将掺杂剂元素注入或沉积在衬底的表面中或衬底上; 耦合到所述真空衬底传输室的掺杂剂激活室，所述掺杂剂激活室被配置为退火所述衬底并激活所述掺杂剂元素; 以及配置成控制所述集成平台的控制器，所述控制器包括其上存储有指令的计算机可读介质，所述指令在由所述控制器执行时使所述集成平台执行方法，所述方法包括：用一种或多种掺杂剂 掺杂室中的元素; 在真空下将衬底转移到掺杂剂激活室; 以及在掺杂剂活化室中退火衬底以激活掺杂剂元素。

公开(公告)号：WO2011112823A2

公开(公告)日：2011-09-15

申请号：PCT/US2011/027922

申请日：2011-03-10

申请人： APPLIED MATERIALS, INC. ,  GANGULY, Udayan ,  YOKOTA, Yoshitaka ,  OLSEN, Christopher, S. ,  SCOTNEY-CASTLE, Matthew, D. ,  NGUYEN, Vicky ,  SRINIVASAN, Swaminathan ,  LIU, Wei ,  SWENBERG, Johanes, F. ,  MARIN, Jose, A. ,  BALAKRISHNA, Ajit ,  NEWMAN, Jacob ,  HICKERSON, Stephen, C.

发明人： GANGULY, Udayan ,  YOKOTA, Yoshitaka ,  OLSEN, Christopher, S. ,  SCOTNEY-CASTLE, Matthew, D. ,  NGUYEN, Vicky ,  SRINIVASAN, Swaminathan ,  LIU, Wei ,  SWENBERG, Johanes, F. ,  MARIN, Jose, A. ,  BALAKRISHNA, Ajit ,  NEWMAN, Jacob ,  HICKERSON, Stephen, C.

IPC分类号： H01L21/3065

CPC分类号： H01L21/0223 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76232 ,  H01L27/11521

摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

摘要翻译： 本文描述了用于制造适用于窄间距应用的半导体器件的设备和方法及其制造方法。 公开了被配置为通过氧化材料层的表面以形成氧化物层来形成和/或成形材料层的各种单室; 通过蚀刻工艺去除至少一些氧化物层; 并且循环地重复氧化和去除过程直到材料层形成为期望的形状。 在一些实施例中，材料层可以是半导体器件的浮栅。

公开(公告)号：WO2011112812A2

公开(公告)日：2011-09-15

申请号：PCT/US2011027900

申请日：2011-03-10

申请人： APPLIED MATERIALS INC ,  GANGULY UDAYAN ,  RANISH JOSEPH M ,  HUNTER AARON M ,  TANG JING ,  OLSEN CHRISTOPHER S ,  SCOTNEY-CASTLE MATTHEW D ,  NGUYEN VICKY ,  SRINIVASAN SWAMINATHAN ,  SWENBERG JOHANES F ,  WANG ANCHUAN ,  INGLE NITIN K ,  HEMKAR MANISH ,  MARIN JOSE A

发明人： GANGULY UDAYAN ,  RANISH JOSEPH M ,  HUNTER AARON M ,  TANG JING ,  OLSEN CHRISTOPHER S ,  SCOTNEY-CASTLE MATTHEW D ,  NGUYEN VICKY ,  SRINIVASAN SWAMINATHAN ,  SWENBERG JOHANES F ,  WANG ANCHUAN ,  INGLE NITIN K ,  HEMKAR MANISH ,  MARIN JOSE A

IPC分类号： H01L21/3065

CPC分类号： H01L21/67115 ,  H01L21/0223 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76232 ,  H01L27/11521

摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

公开(公告)号：WO2011112802A2

公开(公告)日：2011-09-15

申请号：PCT/US2011/027881

申请日：2011-03-10

申请人： APPLIED MATERIALS, INC. ,  GANGULY, Udayan ,  RANISH, Joseph M. ,  HUNTER, Aaron M. ,  TANG, Jing ,  OLSEN, Christopher S. ,  SCOTNEY-CASTLE, Matthew D. ,  NGUYEN, Vicky ,  SRINIVASAN, Swaminathan ,  LIU, Wei ,  SWENBERG, Johanes F. ,  SUN, Shiyu

发明人： GANGULY, Udayan ,  RANISH, Joseph M. ,  HUNTER, Aaron M. ,  TANG, Jing ,  OLSEN, Christopher S. ,  SCOTNEY-CASTLE, Matthew D. ,  NGUYEN, Vicky ,  SRINIVASAN, Swaminathan ,  LIU, Wei ,  SWENBERG, Johanes F. ,  SUN, Shiyu

IPC分类号： H01L21/3065

CPC分类号： H01L21/76232 ,  H01L21/0223 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/68785 ,  H01L27/11521

摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

摘要翻译： 本文描述了用于制造适用于窄间距应用的半导体器件的装置和方法及其制造方法。 公开了通过氧化材料层的表面以形成氧化物层来形成和/或形成材料层的各种单室; 通过蚀刻工艺去除至少一些氧化物层; 并周期性地重复氧化和去除工艺，直到材料层形成所需的形状。 在一些实施例中，材料层可以是半导体器件的浮置栅极。

公开(公告)号：WO2013162972A1

公开(公告)日：2013-10-31

申请号：PCT/US2013/036981

申请日：2013-04-17

申请人： APPLIED MATERIALS, INC. ,  RANISH, Joseph M. ,  BRILLHART, Paul ,  MARIN, Jose Antonio ,  KUPPURAO, Satheesh ,  RAMACHANDRAN, Balasubramanian ,  SRINIVASAN, Swaminathan T. ,  SAMIR, Mehmet Tugrul

发明人： RANISH, Joseph M. ,  BRILLHART, Paul ,  MARIN, Jose Antonio ,  KUPPURAO, Satheesh ,  RAMACHANDRAN, Balasubramanian ,  SRINIVASAN, Swaminathan T. ,  SAMIR, Mehmet Tugrul

IPC分类号： H01L21/205

CPC分类号： H01L21/0262 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67115

摘要： Embodiments of the present invention generally relate to chambers and methods of processing substrates therein. The chambers generally include separate process gas and purge gas regions. The process gas region and purge gas region each have a respective gas inlet and gas outlet. The methods generally include positioning a substrate on a substrate support within the chamber. The plane of the substrate support defines the boundary between a process gas region and purge gas region. Purge gas is introduced into the purge gas region through at least one purge gas inlet, and removed from the purge gas region using at least one purge gas outlet. The process gas is introduced into the process gas region through at least one process gas inlet, and removed from the process gas region through at least one process gas outlet. The process gas is thermally decomposed to deposit a material on the substrate.

摘要翻译： 本发明的实施例一般涉及在其中处理衬底的腔室和方法。 这些室通常包括单独的工艺气体和吹扫气体区域。 处理气体区域和吹扫气体区域各自具有相应的气体入口和气体出口。 所述方法通常包括将衬底定位在腔室内的衬底支撑件上。 衬底支架的平面限定了工艺气体区域和吹扫气体区域之间的边界。 吹扫气体通过至少一个吹扫气体入口被引入净化气体区域中，并且使用至少一个净化气体出口从净化气体区域中除去。 工艺气体通过至少一个工艺气体入口引入工艺气体区域，并通过至少一个工艺气体出口从工艺气体区域中移出。 工艺气体被热分解以在衬底上沉积材料。

公开(公告)号：WO2011112802A3

公开(公告)日：2012-01-05

申请号：PCT/US2011027881

申请日：2011-03-10

申请人： APPLIED MATERIALS INC ,  GANGULY UDAYAN ,  RANISH JOSEPH M ,  HUNTER AARON M ,  TANG JING ,  OLSEN CHRISTOPHER S ,  SCOTNEY-CASTLE MATTHEW D ,  NGUYEN VICKY ,  SRINIVASAN SWAMINATHAN ,  LIU WEI ,  SWENBERG JOHANES F ,  SUN SHIYU

发明人： GANGULY UDAYAN ,  RANISH JOSEPH M ,  HUNTER AARON M ,  TANG JING ,  OLSEN CHRISTOPHER S ,  SCOTNEY-CASTLE MATTHEW D ,  NGUYEN VICKY ,  SRINIVASAN SWAMINATHAN ,  LIU WEI ,  SWENBERG JOHANES F ,  SUN SHIYU

IPC分类号： H01L21/3065

CPC分类号： H01L21/76232 ,  H01L21/0223 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/68785 ,  H01L27/11521

摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

摘要翻译： 本文描述了用于制造适用于窄间距应用的半导体器件的设备和方法及其制造方法。 公开了被配置为通过氧化材料层的表面以形成氧化物层来形成和/或成形材料层的各种单室; 通过蚀刻工艺去除至少一些氧化物层; 并且循环地重复氧化和去除过程直到材料层形成为期望的形状。 在一些实施例中，材料层可以是半导体器件的浮置栅极。

公开(公告)号：WO2011112812A3

公开(公告)日：2011-09-15

申请号：PCT/US2011/027900

申请日：2011-03-10

申请人： APPLIED MATERIALS, INC. ,  GANGULY, Udayan ,  RANISH, Joseph, M. ,  HUNTER, Aaron, M. ,  TANG, Jing ,  OLSEN, Christopher, S. ,  SCOTNEY-CASTLE, Matthew, D. ,  NGUYEN, Vicky ,  SRINIVASAN, Swaminathan ,  SWENBERG, Johanes, F. ,  WANG, Anchuan ,  INGLE, Nitin, K. ,  HEMKAR, Manish ,  MARIN, Jose, A.

发明人： GANGULY, Udayan ,  RANISH, Joseph, M. ,  HUNTER, Aaron, M. ,  TANG, Jing ,  OLSEN, Christopher, S. ,  SCOTNEY-CASTLE, Matthew, D. ,  NGUYEN, Vicky ,  SRINIVASAN, Swaminathan ,  SWENBERG, Johanes, F. ,  WANG, Anchuan ,  INGLE, Nitin, K. ,  HEMKAR, Manish ,  MARIN, Jose, A.

IPC分类号： H01L21/3065

摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

公开(公告)号：WO2013138216A1

公开(公告)日：2013-09-19

申请号：PCT/US2013/030118

申请日：2013-03-11

申请人： APPLIED MATERIALS, INC. ,  THOMPSON, David ,  NARWANKAR, Pravin, K. ,  SRINIVASAN, Swaminathan ,  CHATTERJEE, Sukti ,  MAYUR, Abhilash ,  MAQSOOD, Kashif

发明人： THOMPSON, David ,  NARWANKAR, Pravin, K. ,  SRINIVASAN, Swaminathan ,  CHATTERJEE, Sukti ,  MAYUR, Abhilash ,  MAQSOOD, Kashif

IPC分类号： C23C16/50 ,  C23C16/44

CPC分类号： C23C16/45551 ,  C23C16/45548 ,  C23C16/483

摘要： Provided are atomic layer deposition apparatus and methods including a gas distribution plate and at least one laser source emitting a laser beam adjacent the gas distribution plate to activate gaseous species from the gas distribution plate. Also provided are gas distribution plates with elongate gas injector ports where the at least one laser beam is directed along the length of the elongate gas injectors.

摘要翻译： 提供了原子层沉积设备和方法，包括气体分配板和发射与气体分配板相邻的激光束的至少一个激光源，以激活来自气体分配板的气态物质。 还提供了具有细长气体喷射器端口的气体分配板，其中至少一个激光束沿着细长气体喷射器的长度被引导。

公开(公告)号：WO2012033574A3

公开(公告)日：2012-05-03

申请号：PCT/US2011045320

申请日：2011-07-26

申请人： APPLIED MATERIALS INC ,  WARD MICHAEL G ,  PEIDOUS IGOR V ,  CHIANG SUNNY ,  TA YEN B ,  DARLAK ANDREW ,  PORSHNEV PETER I ,  SRINIVASAN SWAMINATHAN

发明人： WARD MICHAEL G ,  PEIDOUS IGOR V ,  CHIANG SUNNY ,  DARLAK ANDREW ,  PORSHNEV PETER I ,  SRINIVASAN SWAMINATHAN

IPC分类号： H01L21/336 ,  H01L21/8228 ,  H01L29/78

CPC分类号： H01L21/823842 ,  H01J37/32412 ,  H01L21/28088 ,  H01L21/28202 ,  H01L21/28229 ,  H01L29/78

摘要： Methods for forming a device on a substrate are provided herein. In some embodiments, a method of forming a device on a substrate may include providing a substrate having a partially fabricated first device disposed on the substrate, the first device including a first film stack comprising a first dielectric layer and a first high-k dielectric layer disposed atop the first dielectric layer; depositing a first metal layer atop the first film stack; and modifying a first upper surface of the first metal layer to adjust a first threshold voltage of the first device, wherein the modification of the first upper surface does not extend through to a first lower surface of the first metal layer.

摘要翻译： 本文提供了在基板上形成器件的方法。 在一些实施例中，在衬底上形成器件的方法可以包括提供具有设置在衬底上的部分制造的第一器件的衬底，第一器件包括第一膜堆叠，其包括第一介电层和第一高k电介质层 设置在第一电介质层的顶部; 在第一薄膜叠层顶上沉积第一金属层; 以及修改所述第一金属层的第一上表面以调整所述第一器件的第一阈值电压，其中所述第一上表面的修改不延伸穿过所述第一金属层的第一下表面。