公开(公告)号：WO2010101986A8

公开(公告)日：2011-03-31

申请号：PCT/US2010026024

申请日：2010-03-03

Applicant: S3C INC ,  SUMINTO JAMES TJANMENG ,  YUNUS MOHAMMAD

Inventor： SUMINTO JAMES TJANMENG ,  YUNUS MOHAMMAD

IPC: G01L9/06

CPC classification number: B81C1/00158 ,  G01L9/0042 ,  G01L9/0055 ,  G01L19/147

Abstract: A pressure sensor is described with sensing elements electrically and physically isolated from a pressurized medium. An absolute pressure sensor has a reference cavity, which can be at a vacuum or zero pressure, enclosing the sensing elements. The reference cavity is formed by bonding a recessed cap wafer with a gauge wafer having a micromachined diaphragm. Sensing elements are disposed on a first side of the diaphragm. The pressurized medium accesses a second side of the diaphragm opposite to the first side where the sensing elements are disposed. A spacer wafer may be used for structural support and stress relief of the gauge wafer. In one embodiment, vertical through-wafer conductive vias are used to bring out electrical connections from the sensing elements to outside the reference cavity. In an alternative embodiment, peripheral bond pads on the gauge wafer are used to bring out electrical connections from the sensing elements to outside the reference cavity

Abstract translation: 描述了一种压力传感器，其具有与加压介质电气和物理隔离的感测元件。 绝对压力传感器具有可以处于真空或零压力的参考腔，包围感测元件。 参考空腔通过将具有微加工膜片的规格晶片与凹形盖晶片结合而形成。 感测元件设置在隔膜的第一侧上。 加压介质访问隔膜的与传感元件设置的第一侧相对的第二侧。 间隔晶片可用于测量晶片的结构支撑和应力释放。 在一个实施例中，垂直透晶片导电通孔用于引出从感测元件到参考腔外部的电连接。 在替代实施例中，测量晶片上的外围接合焊盘用于引出从感测元件到参考腔外部的电连接

公开(公告)号：WO2011140140A1

公开(公告)日：2011-11-10

申请号：PCT/US2011/035062

申请日：2011-05-03

Applicant: S3C, INC. ,  HUSSAIN, Javed ,  YUNUS, Mohammad ,  SUMINTO, James, T.

Inventor： HUSSAIN, Javed ,  YUNUS, Mohammad ,  SUMINTO, James, T.

IPC: G01L9/00

CPC classification number: B81B7/0058 ,  B81C1/00888 ,  B81C2201/053 ,  G01L9/0055 ,  H01L21/78

Abstract: A Micro-Electro-Mechanical System (MEMS) pressure sensor is disclosed, comprising a gauge wafer, comprising a micromachined structure comprising a membrane region and a pedestal region, wherein a first surface of the micromachined structure is configured to be exposed to a pressure medium that exerts a pressure resulting in a deflection of the membrane region. The gauge wafer also comprises a plurality of sensing elements patterned on the electrical insulation layer on a second surface in the membrane region, wherein a thermal expansion coefficient of the material of the sensing elements substantially matches with a thermal expansion coefficient of the material of the gauge wafer. The pressure sensor comprises a cap wafer coupled to the gauge wafer, which includes a recess on an inner surface of the cap wafer facing the gauge wafer that defines a sealed reference cavity that encloses and prevents exposure of the sensing elements to an external environment.

Abstract translation: 公开了一种微机电系统（MEMS）压力传感器，其包括量规晶片，其包括微加工结构，其包括膜区域和基座区域，其中微机械加工结构的第一表面被配置为暴露于压力介质 其施加导致膜区域偏转的压力。 测量晶片还包括在膜区域中的第二表面上在电绝缘层上图案化的多个感测元件，其中感测元件的材料的热膨胀系数基本上与量规材料的热膨胀系数相匹配 晶圆。 压力传感器包括联接到量规晶片的盖子晶片，其包括位于盖晶片的内表面上的面向量规晶片的凹槽，该凹槽限定密封的参考腔，其封闭并防止感测元件暴露于外部环境。

公开(公告)号：WO2011028946A1

公开(公告)日：2011-03-10

申请号：PCT/US2010/047735

申请日：2010-09-02

Applicant: S3C INC. ,  ZHU, Zhineng

Inventor： ZHU, Zhineng

IPC: G05F1/10

CPC classification number: H03L1/022 ,  H03K3/011 ,  H03K3/03 ,  H03K3/354 ,  H03K4/502

Abstract: A temperature compensated CMOS RC oscillator circuit changes the source- bulk voltage to stabilize the MOSFET's threshold voltage variation over temperature using a resistor and temperature-correlated bias current. The MOSFET's source is connected to ground through a resistor. This temperature-correlated bias current also runs through this resistor. When temperature increases, the bias current also increases, which increases the MOSFET's source-bulk voltage. The increased source-bulk voltage helps to stabilize the threshold voltage of MOSFET at high temperature. A power saving logic is also embedded in this oscillator to achieve higher frequency at lower power consumption. In the present invention, there is no high gain op amp or high speed comparator, which makes the resultant oscillator to be low power design and which can be integrated into a single chip with other system.

Abstract translation: 温度补偿CMOS RC振荡器电路使用电阻和温度相关偏置电流来改变源 - 体电压，以稳定MOSFET的温度阈值电压变化。 MOSFET的源极通过电阻连接到地。 该温度相关偏置电流也通过该电阻。 当温度升高时，偏置电流也会增加，从而增加了MOSFET的源 - 体电压。 增加的源体电压有助于在高温下稳定MOSFET的阈值电压。 该振荡器中也嵌入节能逻辑，以在较低的功耗下实现更高的频率。 在本发明中，没有高增益运算放大器或高速比较器，这使得所得到的振荡器具有低功率设计，并且可以与其它系统集成到单个芯片中。

公开(公告)号：WO2013074351A3

公开(公告)日：2013-05-23

申请号：PCT/US2012/063950

申请日：2012-11-07

Applicant: S3C, INC.

Inventor： CASTAGNA, Joseph

IPC: G01N11/00

Abstract: The invention provides a submersible, electrically-powered sensor assembly that incorporates a flexible seal assembly having operative and non-operative electrical traces of a uniform vertical height for carrying clamping loads and avoiding signal loss along a signal carrying trace due to compression of the flex seal, minimizing fluid leak paths between two flange surfaces, providing stability in compression, and enabling electrical communication in an environment having an operating fluid.

公开(公告)号：WO2013074351A2

公开(公告)日：2013-05-23

申请号：PCT/US2012063950

申请日：2012-11-07

Applicant: S3C INC

Inventor： CASTAGNA JOSEPH

IPC: G01L9/00

CPC classification number: G01L9/00 ,  F16J15/064 ,  G01D11/245 ,  G01D11/26 ,  G01L19/0084 ,  G01L19/0672 ,  G01L19/143 ,  G01L19/148 ,  G01L19/149 ,  H05K1/0296 ,  H05K1/118 ,  H05K2201/09736 ,  H05K2201/09781

Abstract: The invention provides a submersible, electrically-powered sensor assembly that incorporates a flexible seal assembly having operative and non-operative electrical traces of a uniform vertical height for carrying clamping loads and avoiding signal loss along a signal carrying trace due to compression of the flex seal, minimizing fluid leak paths between two flange surfaces, providing stability in compression, and enabling electrical communication in an environment having an operating fluid.

Abstract translation: 本发明提供了一种潜水电动传感器组件，其包括柔性密封组件，其具有用于承载夹紧负载的均匀垂直高度的操作和非操作电迹线，并且避免了由于柔性密封件的压缩而沿着信号承载痕迹的信号损失 使两个法兰表面之间的流体泄漏路径最小化，提供压缩稳定性，以及在具有工作流体的环境中实现电通信。

公开(公告)号：WO2010022373A1

公开(公告)日：2010-02-25

申请号：PCT/US2009/054692

申请日：2009-08-21

Applicant: S3C, INC. ,  DANGTRAN, John ,  HORTON, Roger

Inventor： DANGTRAN, John ,  HORTON, Roger

IPC: G01L9/06

CPC classification number: B81B7/0077 ,  B81B7/0019

Abstract: A sensor device and a method of forming comprises a die pad receives a sensor device, such as a MEMS device. The MEMS device has a first coefficient of thermal expansion (CTE). The die pad is made of a material having a second CTE compliant with the first CTE. The die pad includes a base and a support structure with a CTE compliant with the first and second CTE. The die pad has a support structure that protrudes from a base. The support structure has a height and wall thickness which minimize forces felt by the die pad and MEMS device when the base undergoes thermal expansion or contraction forces from a header.

Abstract translation: 一种传感器装置和一种形成方法包括：芯片垫接收诸如MEMS器件的传感器装置。 MEMS器件具有第一热膨胀系数（CTE）。 芯片焊盘由具有与第一CTE兼容的第二CTE的材料制成。 管芯焊盘包括基座和具有符合第一和第二CTE的CTE的支撑结构。 管芯焊盘具有从基部突出的支撑结构。 支撑结构具有高度和壁厚度，当底座经受来自头部的热膨胀或收缩力时，使模具垫和MEMS装置感觉到的力最小化。

公开(公告)号：WO2013078006A1

公开(公告)日：2013-05-30

申请号：PCT/US2012/063901

申请日：2012-11-07

Applicant: S3C, INC.

Inventor： NZEADIBE, Ihioma, U. ,  HUSSAIN, Javed ,  CASTAGNA, Joseph ,  YUAN, Li ,  HORTON, Roger

IPC: H01L29/84

CPC classification number: G01L23/26 ,  F02D35/023 ,  F02D2400/22 ,  G01L19/0084

Abstract: The present invention disclosed provides for a rugged, compact sensing device for various implementations including those of automotive, marine, and other combustion technologies that require low cost accurate pressure sensing during internal combustion engine process. In one or more aspects of the present invention, a MEMS sensor connection with a flexible circuit is presented and the communication of which is preferably achieved through the use of wire bond technology.

Abstract translation: 所公开的本发明提供了用于各种实现的坚固，紧凑的感测装置，包括在内燃机过程中需要低成本精确的压力感测的汽车，船舶和其他燃烧技术的那些。 在本发明的一个或多个方面中，提出了具有柔性电路的MEMS传感器连接，并且其通信优选通过使用引线键合技术实现。

公开(公告)号：WO2010101986A1

公开(公告)日：2010-09-10

申请号：PCT/US2010/026024

申请日：2010-03-03

Applicant: S3C, INC. ,  SUMINTO, James, Tjanmeng ,  YUNUS, Mohammad

Inventor： SUMINTO, James, Tjanmeng ,  YUNUS, Mohammad

IPC: G01L9/06

CPC classification number: B81C1/00158 ,  G01L9/0042 ,  G01L9/0055 ,  G01L19/147

Abstract: A pressure sensor is descπbed with sensing elements electrically and physically isolated from a pressurized medium An absolute pressure sensor has a reference cavity, which can be at a vacuum or zero pressure, enclosing the sensing elements The reference cavity is formed by bonding a recessed cap wafer with a gauge wafer having a micromachined diaphragm Sensing elements are disposed on a first side ofthe diaphragm The pressurized medium accesses a second side of the diaphragm opposite to the first side where the sensing elements are disposed A spacer'wafer may be used for structural support and stress relief of the gauge wafer In one embodiment, vertical through-wafer conductive vias are used to bring out electrical connections from the sensing elements to outside the reference cavity In an alternative embodiment, peripheral bond pads on the gauge wafer are used to bring out electrical connections from the sensing elements to outside the reference cavity

Abstract translation: 压力传感器被描述为具有与加压介质电气和物理隔离的感测元件绝对压力传感器具有可以处于真空或零压力的参考空腔，包围感测元件。参考腔通过粘合凹形盖片 具有微加工光阑的规格晶片感测元件设置在隔膜的第一侧上。加压介质访问隔膜的与设置有感测元件的第一侧相对的第二侧。间隔件可用于结构支撑和 在一个实施例中，使用垂直贯穿晶片的导电通孔来从感测元件引出到参考腔外部的电连接。在替代实施例中，测量晶片上的外围接合焊盘用于引出电气 从感测元件到参考腔外部的连接

公开(公告)号：WO2008060389A3

公开(公告)日：2008-12-24

申请号：PCT/US2007022336

申请日：2007-10-19

Applicant: S3C INC ,  DANGTRAN JOHN

Inventor： DANGTRAN JOHN

IPC: B81B7/00

CPC classification number: G01P1/023 ,  G01D11/245

Abstract: A sensor device and a method of forming thereof comprises a die pad having an inner portion and an outer portion. The outer portion is made of steel, aluminum or other metal and is adapted to mount the die pad to a support structure having a first coefficient of thermal expansion (CTE) value and provide a hermetic seal therewith. The outer portion is made of a material having a CTE value substantially complaint with the first CTE value. The inner portion may be made of Invar, Kovar or ceramic material to receive a MEMS device having a second CTE value. The inner portion is made of a material having a CTE value substantially compliant with the second CTE value. The outer portion has a thickness less than that of the inner portion. The die pad may include a trench between outer edges of the outer and inner portions.

Abstract translation: 传感器装置及其形成方法包括具有内部和外部的管芯垫。 外部由钢，铝或其他金属制成，并且适于将管芯焊盘安装到具有第一热膨胀系数（CTE）值的支撑结构上并与其形成气密密封。 外部由CTE值基本上与第一CTE值相符的材料制成。 内部可由Invar，Kovar或陶瓷材料制成以接收具有第二CTE值的MEMS器件。 内部由具有基本上符合第二CTE值的CTE值的材料制成。 外部的厚度小于内部的厚度。 管芯焊盘可以包括在外部和内部部分的外边缘之间的沟槽。

公开(公告)号：WO2007117447A3

公开(公告)日：2007-12-27

申请号：PCT/US2007008278

申请日：2007-03-30

Applicant: S3C INC ,  DANGTRAN JOHN ,  HORTON ROGER

Inventor： DANGTRAN JOHN ,  HORTON ROGER

IPC: B81B7/00

CPC classification number: B81B7/0048 ,  H01L2924/19105

Abstract: A low cost micro-electronic package for MEMS applications includes a package substrate, a MEMS device and a buffer insert which is placed between the MEMS device and the package substrate. The buffer insert has a coefficient of thermal expansion (CTE) which is compatible with the material of the MEMS device and is sufficiently rigid to isolate the MEMS device from thermal, mechanical and other physical stresses applied to the package substrate. In an embodiment, the package is formed as an integrated device which includes both the MEMS device and a signal conditioning integrated circuit, potentially found in the same die. The substrate insert may be made of a material having a CTE value compatible with silicon (Si), such as Kovar, Invar, or an appropriate ceramic material or the like.

Abstract translation: 用于MEMS应用的低成本微电子封装包括封装衬底，MEMS器件和放置在MEMS器件和封装衬底之间的缓冲插入件。 缓冲插入件具有与MEMS器件的材料兼容的热膨胀系数（CTE），并且具有足够的刚度以将MEMS器件与施加到封装衬底的热，机械和其他物理应力隔离。 在一个实施例中，封装被形成为集成器件，其包括可能在相同管芯中的MEMS器件和信号调节集成电路两者。 衬底插入物可以由具有与硅（Si）相容的CTE值的材料制成，例如Kovar，Invar或适当的陶瓷材料等。