MULTIFILAMENT SUPERCONDUCTOR HAVING REDUCED AC LOSSES AND METHOD FOR FORMING THE SAME
    2.
    发明申请
    MULTIFILAMENT SUPERCONDUCTOR HAVING REDUCED AC LOSSES AND METHOD FOR FORMING THE SAME 审中-公开
    具有减少交流损失的多元超级电容器及其形成方法

    公开(公告)号:WO2011163343A3

    公开(公告)日:2012-03-29

    申请号:PCT/US2011041422

    申请日:2011-06-22

    CPC classification number: H01L39/143 H01L39/2461 H01L39/248

    Abstract: A high temperature superconductor structure including: a substrate on which at least one buffer layer is deposited, a superconductor layer on the buffer layer, the superconducting layer composed of superconductor material that forms at least two substantially parallel superconductor filaments that continuously extend along the length of the substrate wherein at least two superconductor filaments are separated from each other by at least one insulating strip wherein the insulating strip continuously extends along the length of the substrate and is composed of insulating material with a resistivity greater than about 1 m?cm. Also disclosed are methods of producing high temperature superconductors.

    Abstract translation: 一种高温超导体结构,包括:沉积有至少一个缓冲层的衬底,在缓冲层上的超导体层,由超导体材料构成的超导层,其形成至少两个基本上平行的超导体细丝,所述超导体细丝沿着 所述衬底,其中至少两个超导体细丝通过至少一个绝缘带彼此分离,其中所述绝缘条沿着所述衬底的长度连续地延伸并且由电阻率大于约1mΩ·cm的绝缘材料构成。 还公开了生产高温超导体的方法。

    A TAPE-MANUFACTURING SYSTEM HAVING EXTENDED OPERATIONAL CAPABILITIES
    3.
    发明申请
    A TAPE-MANUFACTURING SYSTEM HAVING EXTENDED OPERATIONAL CAPABILITIES 审中-公开
    具有扩展运行能力的胶带制造系统

    公开(公告)号:WO2005045094A1

    公开(公告)日:2005-05-19

    申请号:PCT/US2004/036667

    申请日:2004-11-03

    Abstract: A tape-manufacturing system (10) for coating at least one tape substrate (28) such as, for example, for the manufacture of a high-temperature superconductor (HTS) conductor is disclosed. The tape-manufacturing system includes at least two electron beam (e-beam) deposition sources (12), at least one assist source (14) and, optionally, a controller (16). Each e-beam deposition source may be in-process repairable. Each e-beam deposition source (12) is capable of to communicating an evaporant material with at least a portion of at least one tape substrate (28) to deposit a coating thereon. The at least one assist source (14) is capable of communicating a beam of a species to the coating. The controller (16) communicates with the at least two e-beam deposition sources (12) and the at least one assist source (14).

    Abstract translation: 公开了用于涂覆例如用于制造高温超导体(HTS)导体)的至少一个带基板(28)的带制造系统(10)。 磁带制造系统包括至少两个电子束(e-beam)沉积源(12),至少一个辅助源(14)和任选的控制器(16)。 每个电子束沉积源可以在工艺中可修复。 每个电子束沉积源(12)能够将蒸发材料与至少一部分带基材(28)连通以在其上沉积涂层。 所述至少一个辅助源(14)能够将物料束传送到所述涂层。 控制器(16)与至少两个电子束沉积源(12)和至少一个辅助源(14)通信。

    APPARATUS FOR AND METHOD OF COOLING AND POSITIONING A TRANSLATING SUBSTRATE TAPE FOR USE WITH A CONTINUOUS VAPOR DEPOSITION PROCESS
    7.
    发明申请
    APPARATUS FOR AND METHOD OF COOLING AND POSITIONING A TRANSLATING SUBSTRATE TAPE FOR USE WITH A CONTINUOUS VAPOR DEPOSITION PROCESS 审中-公开
    用于冷却和定位用于连续蒸发沉积过程的转印底片带的装置和方法

    公开(公告)号:WO2005011080A2

    公开(公告)日:2005-02-03

    申请号:PCT/US2004016631

    申请日:2004-05-25

    CPC classification number: C23C14/541 C23C14/54 C23C14/562

    Abstract: The present invention is an apparatus for and method of cooling and positioning a translating substrate tape during a continuous high-throughput deposition process such as IBAD that is characterized by a long deposition zone where the substrate tape comes into contact with a substrate assembly as it translates the length of the deposition zone. A chilled liquid passes through the substrate assembly, maintaining the temperature of the substrate assembly below a specified level. Also passing through the substrate assembly is an inert gas that exits at an interface between the translating tape and the substrate assembly.

    Abstract translation: 本发明是在连续高通量沉积工艺(例如IBAD)期间冷却和定位平移衬底带的装置和方法,其特征在于其中衬底带与衬底组件接触的长沉积区, 沉积区的长度。 冷却液体通过基板组件,将基板组件的温度保持在特定的水平以下。 也穿过衬底组件是惰性气体,其在平移带和衬底组件之间的界面处离开。

    MULTI-FILAMENT SUPERCONDUCTING COMPOSITES
    8.
    发明申请
    MULTI-FILAMENT SUPERCONDUCTING COMPOSITES 审中-公开
    多层超导复合材料

    公开(公告)号:WO2014051823A2

    公开(公告)日:2014-04-03

    申请号:PCT/US2013/049313

    申请日:2013-07-03

    Abstract: A configuration and a method of constructing a high-temperature superconductor tape including a plurality superconducting filaments sandwiched between a substrate and an overlayer, and having a compliant material extending between the substrate and the overlayer and isolating each superconducting filament.

    Abstract translation: 一种构造和包括夹在基底和覆盖层之间的多根超导细丝的高温超导体带的构造和方法,并且具有在衬底和覆盖层之间延伸的顺应性材料并隔离每个超导细丝。

    SUPERCONDUCTOR AND METHOD FOR SUPERCONDUCTOR MANUFACTURING
    9.
    发明申请
    SUPERCONDUCTOR AND METHOD FOR SUPERCONDUCTOR MANUFACTURING 审中-公开
    超导体和超导体制造方法

    公开(公告)号:WO2013181587A1

    公开(公告)日:2013-12-05

    申请号:PCT/US2013/043698

    申请日:2013-05-31

    CPC classification number: H01B12/06 H01B13/0036 H01L39/126 H01L39/247

    Abstract: Disclosed is a superconducting article comprising a silver overlayer consisting of no more than about 20% of grains over about 1µm, having a minimum Vickers micro-hardness value of about 100, and a porosity of less than about 1%. A method of manufacturing a superconducting tape is disclosed as comprising, deposition of silver, oxygenation at about 400C for about 30 minutes, slitting, deposition of silver at a temperature of less than about 250C, and application of copper.

    Abstract translation: 公开了一种超导制品,其包含由超过约20%的晶粒超过约1μm的银覆盖层,具有约100的最小维氏显微硬度值和小于约1%的孔隙率。 公开了一种制造超导带的方法,包括:银的沉积,约400℃的氧化约30分钟,在低于约250℃的温度下分切,沉积银和施加铜。

    A CHEMICAL VAPOR DEPOSITION (CVD) APPARATUS USABLE IN THE MANUFACTURE OF SUPERCONDUCTING CONDUCTORS
    10.
    发明申请
    A CHEMICAL VAPOR DEPOSITION (CVD) APPARATUS USABLE IN THE MANUFACTURE OF SUPERCONDUCTING CONDUCTORS 审中-公开
    超导体导体制造中使用的化学气相沉积(CVD)装置

    公开(公告)号:WO2006137873A3

    公开(公告)日:2009-02-19

    申请号:PCT/US2005033448

    申请日:2005-09-16

    Abstract: A CVD apparatus capable of substantially simultaneously processing multiple portions of at least one substrate or substantially simultaneously processing portions of multiple substrates or substantially simultaneously processing multiple portions of at least one substrate and portions of multiple substrates, the CVD apparatus is described. The CVD apparatus includes a reactor, at least one substrate heater, at least one precursor supply system, at least one precursor injector, optionally, communicating with at least one temperature regulated manifold, at least one reactants mixer, and, optionally, at least one controller communicating with at least one substrate heater, the at least one precursor supply system, the at least one precursor injector, the at least one temperature regulated manifold, and combinations thereof.

    Abstract translation: 一种能够基本上同时处理至少一个基板的多个部分或基本上同时处理多个基板的部分或基本上同时处理至少一个基板和多个基板的多个部分的多个部分的CVD装置,描述了CVD装置。 CVD装置包括反应器,至少一个基板加热器,至少一个前体供应系统,至少一个前体喷射器,任选地与至少一个温度调节的歧管连通,至少一个反应物混合器,以及任选的至少一个 控制器与至少一个衬底加热器,所述至少一个前体供应系统,所述至少一个前体喷射器,所述至少一个温度调节歧管及其组合相连通。

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