SUPERCONDUCTING FAULT CURRENT-LIMITER WITH VARIABLE IMPEDANCE SHUNT COIL
    2.
    发明申请
    SUPERCONDUCTING FAULT CURRENT-LIMITER WITH VARIABLE IMPEDANCE SHUNT COIL 审中-公开
    超导故障电流限制与可变阻抗分离线圈

    公开(公告)号:WO2011091256A3

    公开(公告)日:2011-12-08

    申请号:PCT/US2011022063

    申请日:2011-01-21

    摘要: A superconducting fault current-limiter is provided, including a superconducting element configured to resistively or inductively limit a fault current, and one or more variable-impedance shunts electrically coupled in parallel with the superconducting element. The variable-impedance shunt(s) is configured to present a first impedance during a superconducting state of the superconducting element and a second impedance during a normal resistive state of the superconducting element. The superconducting element transitions from the superconducting state to the normal resistive state responsive to the fault current, and responsive thereto, the variable-impedance shunt(s) transitions from the first to the second impedance. The second impedance of the variable-impedance shunt(s) is a lower impedance than the first impedance, which facilitates current flow through the variable-impedance shunt(s) during a recovery transition of the superconducting element from the normal resistive state to the superconducting state, and thus, facilitates recovery of the superconducting element under load.

    摘要翻译: 提供了一种超导故障电流限制器,包括被配置为电阻或电感地限制故障电流的超导元件以及与超导元件并联电耦合的一个或多个可变阻抗并联电路。 可变阻抗分流器被配置为在超导元件的超导状态期间呈现第一阻抗,并且在超导元件的正常电阻状态期间呈现第二阻抗。 超导元件响应于故障电流从超导状态转变到正常电阻状态,并响应于此,可变阻抗分流从第一阻抗转换到第二阻抗。 可变阻抗分流器的第二阻抗是比第一阻抗低的阻抗,这有助于在超导元件从正常电阻状态到超导的恢复转变期间电流流过可变阻抗分流器 状态,从而有助于在负载下回收超导元件。

    METHOD OF FORMING AN HTS ARTICLE
    3.
    发明申请
    METHOD OF FORMING AN HTS ARTICLE 审中-公开
    形成一个HTS文章的方法

    公开(公告)号:WO2009105426A2

    公开(公告)日:2009-08-27

    申请号:PCT/US2009/034291

    申请日:2009-02-17

    申请人: SUPERPOWER, INC.

    IPC分类号: H01L39/24

    CPC分类号: H01L39/247

    摘要: A method of forming a superconducting article includes providing a substrate tape, forming a superconducting layer overlying the substrate tape, and depositing a capping layer overlying the superconducting layer. The capping layer includes a noble metal and has a thickness not greater than about 1.0 micron. The method further includes electrodepositing a stabilizer layer overlying the capping layer using a solution that is non-reactive to the superconducting layer. The superconducting layer has an as-formed critical current I C(AF) and a post-stabilized critical current I C(PS) . The I C(PS) is at least about 95% of the I C(AF) .

    摘要翻译: 形成超导制品的方法包括提供衬底带,形成覆盖衬底带的超导层,以及沉积覆盖超导层的覆盖层。 封盖层包括贵金属并具有不大于约1.0微米的厚度。 该方法还包括使用对超导层无反应性的溶液电沉积覆盖在覆盖层上的稳定剂层。 超导层具有如此形成的临界电流I C(AF)和后稳定的临界电流I C(PS)。 I C(PS)是I C(AF)的至少约95%。

    SELF-TRIGGERING SUPERCONDUCTING FAULT CURRENT LIMITER
    4.
    发明申请
    SELF-TRIGGERING SUPERCONDUCTING FAULT CURRENT LIMITER 审中-公开
    自触发超导故障电流限制

    公开(公告)号:WO2006107639A3

    公开(公告)日:2007-06-21

    申请号:PCT/US2006011152

    申请日:2006-03-27

    申请人: SUPERPOWER INC

    IPC分类号: H02H3/00 H01H7/00 H02H7/00

    CPC分类号: H02H7/001 Y02E40/68

    摘要: A modular and scaleable Matrix Fault Current Limiter (40) (MFCL) that functions as a "variable impedance" device in an electric power network (10), using components made of superconducting and non-superconducting electrically conductive materials. The matrix fault current limiter comprises a fault current limiter module (32) that includes a superconductor (12) which is electrically coupled in parallel with a trigger coil (34), wherein the trigger coil is magnetically coupled to the superconductor. The current surge doing a fault within the electrical power network will cause the superconductor to transition to its resistive state and also generate a uniform magnetic field in the trigger coil and simultaneously limit the voltage developed across the superconductor. This results in fast and uniform quenching of the superconductors, significantly reduces the burnout risk associated with non-uniformity often existing within the volume of superconductor materials. The fault current limiter modules may be electrically coupled together to form various "n" (rows) x "m" (columns) matrix configurations.

    摘要翻译: 一种模块化和可扩展的矩阵故障限流器(MFCL)(MFCL),其用作电力网络(10)中的“可变阻抗”装置,使用由超导和非超导导电材料制成的部件。 矩阵故障限流器包括故障限流器模块(32),其包括与触发线圈(34)并联电耦合的超导体(12),其中触发线圈磁耦合到超导体。 在电力网络内发生故障的当前浪涌将导致超导体转变到其电阻状态,并且还在触发线圈中产生均匀的磁场,同时限制跨超导体产生的电压。 这导致超导体的快速和均匀的淬火,显着降低了与超导体材料体积内常常存在的不均匀相关的烧坏风险。 故障限流器模块可以电耦合在一起以形成各种“n”(行)x“m”(列)矩阵配置。

    CRITICAL CURRENT TESTING TECHNIQUES FOR SUPERCONDUCTING CONDUCTORS
    5.
    发明申请
    CRITICAL CURRENT TESTING TECHNIQUES FOR SUPERCONDUCTING CONDUCTORS 审中-公开
    超导导体的关键电流测试技术

    公开(公告)号:WO2006036537A3

    公开(公告)日:2007-03-22

    申请号:PCT/US2005032601

    申请日:2005-09-14

    申请人: SUPERPOWER INC

    CPC分类号: G01R33/1246

    摘要: A method for testing a superconducting coated conductor is disclosed. The method includes providing a superconducting coated conductor having an dimension ratio of not less than about 10²; and measuring a voltage over a plurality of segments of the superconducting article while applying a constant current Icc.

    摘要翻译: 公开了一种用于测试超导涂层导体的方法。 该方法包括提供尺寸比不小于约10 2的超导涂层导体; 以及在施加恒定电流Icc的同时测量所述超导制品的多个部分上的电压。

    SUPERCONDUCTOR COMPONENTS
    6.
    发明申请
    SUPERCONDUCTOR COMPONENTS 审中-公开
    超级电容元件

    公开(公告)号:WO2007030546A1

    公开(公告)日:2007-03-15

    申请号:PCT/US2006/034726

    申请日:2006-09-06

    申请人: SUPERPOWER, INC.

    发明人: XIONG, Xuming

    IPC分类号: H01L39/00

    CPC分类号: H01L39/2461

    摘要: A superconductor component is disclosed that includes a metal alloy substrate having a dimension ratio of not less than 10, a compliance layer overlying the substrate, the compliance layer being comprised of an amorphous or nanocrystalline ceramic material having an average grain size not greater than 50 nm, and an IBAD buffer layer overlying the compliance layer. The IBAD buffer layer has a biaxial crystal texture and comprises a material from the group consisting of fluorite type materials, pyrochlore type materials, rare earth C-type materials, non-cubic materials, and layer structured materials. A superconductor layer overlies the IBAD buffer layer.

    摘要翻译: 公开了一种超导体部件,其包括尺寸比不小于10的金属合金基板,覆盖在基板上的柔顺层,柔性层由平均晶粒尺寸不大于50nm的非晶或纳米晶体陶瓷材料构成 ,以及覆盖遵从层的IBAD缓冲层。 IBAD缓冲层具有双轴晶体结构,并且包括由萤石型材料,烧绿石型材料,稀土C型材料,非立方体材料和层结构材料组成的组中的材料。 超导体层覆盖IBAD缓冲层。

    A CHEMICAL VAPOR DEPOSITION (CVD) APPARATUS USABLE IN THE MANUFACTURE OF SUPERCONDUCTING CONDUCTORS
    7.
    发明申请
    A CHEMICAL VAPOR DEPOSITION (CVD) APPARATUS USABLE IN THE MANUFACTURE OF SUPERCONDUCTING CONDUCTORS 审中-公开
    超导体导体制造中使用的化学气相沉积(CVD)装置

    公开(公告)号:WO2006137873A2

    公开(公告)日:2006-12-28

    申请号:PCT/US2005/033448

    申请日:2005-09-16

    摘要: A CVD apparatus capable of substantially simultaneously processing multiple portions of at least one substrate or substantially simultaneously processing portions of multiple substrates or substantially simultaneously processing multiple portions of at least one substrate and portions of multiple substrates, the CVD apparatus is described. The CVD apparatus includes a reactor, at least one substrate heater, at least one precursor supply system, at least one precursor injector, optionally, communicating with at least one temperature regulated manifold, at least one reactants mixer, and, optionally, at least one controller communicating with at least one substrate heater, the at least one precursor supply system, the at least one precursor injector, the at least one temperature regulated manifold, and combinations thereof.

    摘要翻译: 一种能够基本上同时处理至少一个基板的多个部分或基本上同时处理多个基板的部分或基本上同时处理至少一个基板和多个基板的多个部分的多个部分的CVD装置,描述了CVD装置。 CVD装置包括反应器,至少一个基板加热器,至少一个前体供应系统,至少一个前体喷射器,任选地与至少一个温度调节的歧管连通,至少一个反应物混合器,以及任选的至少一个 控制器与至少一个衬底加热器,所述至少一个前体供应系统,所述至少一个前体喷射器,所述至少一个温度调节歧管及其组合相连通。

    HIGH-THROUGHPUT EX-SITU METHOD FOR RARE-EARTH-BARIUM-COPPER-OXIDE (REBCO) FILM GROWTH
    8.
    发明申请
    HIGH-THROUGHPUT EX-SITU METHOD FOR RARE-EARTH-BARIUM-COPPER-OXIDE (REBCO) FILM GROWTH 审中-公开
    用于稀土 - 铜 - 氧化物(REBCO)膜生长的高通量EX-SITU方法

    公开(公告)号:WO2005060632A3

    公开(公告)日:2006-07-06

    申请号:PCT/US2004041753

    申请日:2004-12-14

    申请人: SUPERPOWER INC

    摘要: The present invention provides a high-throughput system for the ex-situ formation of a superconducting thin film, such as rare-earth-barium-copper-oxide (REBCO), atop a continuous length of buffered metal substrate tape by heating a buffered metal substrate tape coated with precursors of REBCO. These precursors, when heated and introduced to water vapor within a process chamber, decompose to form a functional superconducting thin film epitaxial to the buffer layer. A chamber such as a metalorganic chemical vapor deposition (MOCVD) reactor having showerhead and substrate heater assemblies designed for the creation of a long and wide deposition zone is well suited for use in the process the system. The chamber could be of cold-wall type where the walls are not heated or could of hot-wall type where the walls are heated.

    摘要翻译: 本发明提供了一种用于通过加热缓冲金属在连续长度的缓冲金属衬底带之上的超导薄膜例如稀土 - 氧化钡 - 氧化铜(REBCO)的非原位形成的高通量系统 涂覆有REBCO前体的底胶带。 这些前体当被加热并被引入到处理室内的水蒸气中时,分解成形成向缓冲层外延的功能超导薄膜。 具有喷淋头和基板加热器组件的金属有机化学气相沉积(MOCVD)反应器的腔室,其设计用于产生长而宽的沉积区域,非常适用于该系统的过程。 该室可以是冷壁型,其中壁不加热或壁加热的热壁型。

    HIGH-THROUGHPUT EX-SITU METHOD FOR RARE-EARTH-BARIUM-COPPER-OXIDE (REBCO) FILM GROWTH
    10.
    发明申请
    HIGH-THROUGHPUT EX-SITU METHOD FOR RARE-EARTH-BARIUM-COPPER-OXIDE (REBCO) FILM GROWTH 审中-公开
    用于稀土 - 铜 - 氧化物(REBCO)膜生长的高通量EX-SITU方法

    公开(公告)号:WO2005060632A2

    公开(公告)日:2005-07-07

    申请号:PCT/US2004/041753

    申请日:2004-12-14

    申请人: SUPERPOWER, INC.

    IPC分类号: C23C8/02 C23C8/16 H01L39/24

    摘要: The present invention provides a high-throughput system for the ex-situ formation of a superconducting thin film, such as rare-earth-barium-copper-oxide (REBCO), atop a continuous length of buffered metal substrate tape by heating a buffered metal substrate tape coated with precursors of REBCO. These precursors, when heated and introduced to water vapor within a process chamber, decompose to form a functional superconducting thin film epitaxial to the buffer layer. A chamber such as a metalorganic chemical vapor deposition (MOCVD) reactor having showerhead and substrate heater assemblies designed for the creation of a long and wide deposition zone is well suited for use in the process the system. The chamber could be of cold-wall type where the walls are not heated or could of hot-wall type where the walls are heated.

    摘要翻译: 本发明提供了一种高通量系统,用于通过加热缓冲金属在连续长度的缓冲金属基材带上方,在诸如稀土 - 氧化钡 - 氧化铜(REBCO)之类的位置上形成超导薄膜 涂覆有REBCO前体的底胶带。 这些前体当被加热并被引入处理室内的水蒸汽时分解形成向缓冲层外延的功能超导薄膜。 具有喷淋头和基板加热器组件的金属有机化学气相沉积(MOCVD)反应器的腔室,其设计用于产生长而宽的沉积区域,非常适用于该系统的过程。 该室可以是冷壁型,其中壁不加热或者壁可以被加热。