公开(公告)号：WO2012148826A2

公开(公告)日：2012-11-01

申请号：PCT/US2012/034590

申请日：2012-04-20

Applicant: APPLIED MATERIALS, INC. ,  IRAVANI, Hassan, G. ,  XU, Kun ,  SWEDEK, Boguslaw, A. ,  CARLSSON, Ingemar ,  SHEN, Shih-Haur ,  TU, Wen-Chiang

Inventor： IRAVANI, Hassan, G. ,  XU, Kun ,  SWEDEK, Boguslaw, A. ,  CARLSSON, Ingemar ,  SHEN, Shih-Haur ,  TU, Wen-Chiang

IPC: H01L21/304 ,  H01L21/66

CPC classification number: H01L22/14 ,  B24B49/105 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of chemical mechanical polishing a substrate includes polishing a metal layer on the substrate at a polishing station, monitoring thickness of the metal layer during polishing at the polishing station with an eddy current monitoring system, and controlling pressures applied by a carrier head to the substrate during polishing of the metal layer at the polishing station based on thickness measurements of the metal layer from the eddy current monitoring system to reduce differences between an expected thickness profile of the metal layer and a target profile, wherein the metal layer has a resistivity greater than 700 ohm Angstroms.

Abstract translation: 一种基板的化学机械抛光方法包括：在抛光台处抛光基板上的金属层，在抛光台处用涡流监视系统监测在抛光过程中金属层的厚度，以及控制承载头施加到 基于来自涡流监测系统的金属层的厚度测量在抛光站处抛光金属层的衬底，以减少金属层的预期厚度分布与目标轮廓之间的差异，其中金属层具有更大的电阻率 超过700欧姆埃。

公开(公告)号：WO2012148862A2

公开(公告)日：2012-11-01

申请号：PCT/US2012/034712

申请日：2012-04-23

Applicant: APPLIED MATERIALS, INC. ,  IRAVANI, Hassan G. ,  XU, Kun ,  SWEDEK, Boguslaw A. ,  CARLSSON, Ingemar ,  SHEN, Shih-Haur ,  TU, Wen-Chiang ,  GAGE, David Maxwell ,  WANG, James C.

Inventor： IRAVANI, Hassan G. ,  XU, Kun ,  SWEDEK, Boguslaw A. ,  CARLSSON, Ingemar ,  SHEN, Shih-Haur ,  TU, Wen-Chiang ,  GAGE, David Maxwell ,  WANG, James C.

IPC: H01L21/304 ,  H01L21/66

CPC classification number: B24B37/00 ,  B24B49/105

Abstract: A method of chemical mechanical polishing a substrate includes polishing a metal layer on the substrate at a polishing station, monitoring thickness of the metal layer during polishing at the polishing station with an eddy current monitoring system, and halting polishing when the eddy current monitoring system indicates that residue of the metal layer is removed from an underlying layer and a top surface of the underlying layer is exposed.

Abstract translation: 对基板进行化学机械抛光的方法包括：在抛光台处对基板上的金属层进行抛光，用涡流监视系统在抛光台上研磨抛光期间监测金属层的厚度，并且当涡流监视系统指示 金属层的残留物从下层移除，底层的顶表面被暴露。

公开(公告)号：WO2012148826A3

公开(公告)日：2013-01-17

申请号：PCT/US2012034590

申请日：2012-04-20

Applicant: APPLIED MATERIALS INC ,  IRAVANI HASSAN G ,  XU KUN ,  SWEDEK BOGUSLAW A ,  CARLSSON INGEMAR ,  SHEN SHIH-HAUR ,  TU WEN-CHIANG

Inventor： IRAVANI HASSAN G ,  XU KUN ,  SWEDEK BOGUSLAW A ,  CARLSSON INGEMAR ,  SHEN SHIH-HAUR ,  TU WEN-CHIANG

IPC: H01L21/304 ,  H01L21/66

CPC classification number: H01L22/14 ,  B24B49/105 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of chemical mechanical polishing a substrate includes polishing a metal layer on the substrate at a polishing station, monitoring thickness of the metal layer during polishing at the polishing station with an eddy current monitoring system, and controlling pressures applied by a carrier head to the substrate during polishing of the metal layer at the polishing station based on thickness measurements of the metal layer from the eddy current monitoring system to reduce differences between an expected thickness profile of the metal layer and a target profile, wherein the metal layer has a resistivity greater than 700 ohm Angstroms.

Abstract translation: 一种基板的化学机械抛光方法包括：在抛光台处抛光基板上的金属层，在抛光台处用涡流监视系统监测在抛光过程中金属层的厚度，以及控制承载头施加到 基于来自涡流监测系统的金属层的厚度测量在抛光站处抛光金属层的衬底，以减少金属层的预期厚度分布与目标轮廓之间的差异，其中金属层具有更大的电阻率 超过700欧姆埃。

公开(公告)号：WO2012148862A3

公开(公告)日：2012-12-27

申请号：PCT/US2012034712

申请日：2012-04-23

Applicant: APPLIED MATERIALS INC ,  IRAVANI HASSAN G ,  XU KUN ,  SWEDEK BOGUSLAW A ,  CARLSSON INGEMAR ,  SHEN SHIH-HAUR ,  TU WEN-CHIANG ,  GAGE DAVID MAXWELL ,  WANG JAMES C

Inventor： IRAVANI HASSAN G ,  XU KUN ,  SWEDEK BOGUSLAW A ,  CARLSSON INGEMAR ,  SHEN SHIH-HAUR ,  TU WEN-CHIANG ,  GAGE DAVID MAXWELL ,  WANG JAMES C

IPC: H01L21/304 ,  H01L21/66

CPC classification number: B24B37/00 ,  B24B49/105

Abstract: A method of chemical mechanical polishing a substrate includes polishing a metal layer on the substrate at a polishing station, monitoring thickness of the metal layer during polishing at the polishing station with an eddy current monitoring system, and halting polishing when the eddy current monitoring system indicates that residue of the metal layer is removed from an underlying layer and a top surface of the underlying layer is exposed.

Abstract translation: 化学机械抛光基板的方法包括在抛光站抛光基板上的金属层，在抛光站处用涡流监视系统在抛光期间监视金属层的厚度，并且当涡流监视系统指示时停止抛光 金属层的残余物从下层去除并且下层的上表面被暴露。

公开(公告)号：WO2012030475A2

公开(公告)日：2012-03-08

申请号：PCT/US2011/046660

申请日：2011-08-04

Applicant: APPLIED MATERIALS, INC. ,  DUBOUST, Alain ,  JEW, Stephen ,  MAI, David H. ,  TRAN, Huyen ,  TU, Wen-Chiang ,  SHEN, Shih-Haur ,  ZHANG, Jimin ,  CARLSSON, Ingemar ,  SWEDEK, Boguslaw A. ,  WANG, Zhihong

Inventor： DUBOUST, Alain ,  JEW, Stephen ,  MAI, David H. ,  TRAN, Huyen ,  TU, Wen-Chiang ,  SHEN, Shih-Haur ,  ZHANG, Jimin ,  CARLSSON, Ingemar ,  SWEDEK, Boguslaw A. ,  WANG, Zhihong

IPC: H01L21/304 ,  H01L21/66

CPC classification number: B24B37/013 ,  B24B37/042 ,  B65B1/366 ,  G06F17/5086 ,  H01L21/30625 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first prepolish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.

Abstract translation: 第一基材的第一预期所需抛光时间与第二基材的第二预期所需抛光时间之间的差异是使用第一预先抛光厚度和第二预抛光厚度测量的， 在线计量站。 基于第一预期所需抛光时间和第二预期所需抛光时间之间的差确定初始阶段的持续时间。 在抛光操作开始时的初始阶段，对第一基板和第二基板中的任一者施加压力的期望抛光时间较小，同时对第一基板和第二基板中的任一者施加压力 预计需要更长的抛光时间。 在初始阶段之后，对第一基板和第二基板施加压力。

公开(公告)号：WO2014018027A1

公开(公告)日：2014-01-30

申请号：PCT/US2012/048050

申请日：2012-07-25

Applicant: APPLIED MATERIALS, INC. ,  XU, Kun ,  ZHANG, Jimin ,  MAI, David H. ,  JEW, Stephen ,  SHEN, Shih-Haur Walters ,  WANG, Zhihong ,  OSTERHELD, Thomas H. ,  TU, Wen-Chiang ,  LAM, Gary Ka Ho ,  KITAJIMA, Tomohiko

Inventor： XU, Kun ,  ZHANG, Jimin ,  MAI, David H. ,  JEW, Stephen ,  SHEN, Shih-Haur Walters ,  WANG, Zhihong ,  OSTERHELD, Thomas H. ,  TU, Wen-Chiang ,  LAM, Gary Ka Ho ,  KITAJIMA, Tomohiko

IPC: H01L21/304

CPC classification number: B24B37/015 ,  H01L21/3212

Abstract: Methods for chemical mechanical polishing (CMP) of semiconductor substrates, and more particularly to temperature control during such chemical mechanical polishing are provided. In one aspect, the method comprises polishing the substrate with a polishing surface during a polishing process to remove a portion of the conductive material, repeatedly monitoring a temperature of the polishing surface during the polishing process, and exposing the polishing surface to a rate quench process in response to the monitored temperature so as to achieve a target value for the monitored temperature during the polishing process.

Abstract translation: 提供半导体衬底的化学机械抛光（CMP）的方法，更具体地说，涉及这种化学机械抛光时的温度控制。 一方面，该方法包括在抛光过程中用抛光表面抛光衬底以去除一部分导电材料，在抛光过程中重复地监测抛光表面的温度，并将抛光表面暴露于速率骤冷过程 响应于所监测的温度，以便在抛光过程中达到监测温度的目标值。

公开(公告)号：WO2012030475A4

公开(公告)日：2012-08-16

申请号：PCT/US2011046660

申请日：2011-08-04

Applicant: APPLIED MATERIALS INC ,  DUBOUST ALAIN ,  JEW STEPHEN ,  MAI DAVID H ,  TRAN HUYEN ,  TU WEN-CHIANG ,  SHEN SHIH-HAUR ,  ZHANG JIMIN ,  CARLSSON INGEMAR ,  SWEDEK BOGUSLAW A ,  WANG ZHIHONG

Inventor： DUBOUST ALAIN ,  JEW STEPHEN ,  MAI DAVID H ,  TRAN HUYEN ,  TU WEN-CHIANG ,  SHEN SHIH-HAUR ,  ZHANG JIMIN ,  CARLSSON INGEMAR ,  SWEDEK BOGUSLAW A ,  WANG ZHIHONG

IPC: H01L21/304 ,  H01L21/66

CPC classification number: B24B37/013 ,  B24B37/042 ,  B65B1/366 ,  G06F17/5086 ,  H01L21/30625 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first prepolish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.

Abstract translation: 第一衬底的第一预期所需抛光时间与第二衬底的第二预期所需抛光时间之间的差异是使用在线计量站测量的第一预稀释厚度和第二预抛光厚度来确定的。 基于第一预期所需抛光时间和第二预期所需抛光时间之间的差异来确定初始周期的持续时间。 在抛光操作开始时的初始阶段，对于第一基板和第二基板中的任一个具有较少的预期需要的抛光时间，同时对第一基板和第二基板中的哪一个施加压力，则不施加压力 更大的预期需要的抛光时间。 在初始周期之后，对第一基板和第二基板施加压力。

公开(公告)号：WO2012030475A3

公开(公告)日：2012-07-05

申请号：PCT/US2011046660

申请日：2011-08-04

Applicant: APPLIED MATERIALS INC ,  DUBOUST ALAIN ,  JEW STEPHEN ,  MAI DAVID H ,  TRAN HUYEN ,  TU WEN-CHIANG ,  SHEN SHIH-HAUR ,  ZHANG JIMIN ,  CARLSSON INGEMAR ,  SWEDEK BOGUSLAW A ,  WANG ZHIHONG

Inventor： DUBOUST ALAIN ,  JEW STEPHEN ,  MAI DAVID H ,  TRAN HUYEN ,  TU WEN-CHIANG ,  SHEN SHIH-HAUR ,  ZHANG JIMIN ,  CARLSSON INGEMAR ,  SWEDEK BOGUSLAW A ,  WANG ZHIHONG

IPC: H01L21/304 ,  H01L21/66

CPC classification number: B24B37/013 ,  B24B37/042 ,  B65B1/366 ,  G06F17/5086 ,  H01L21/30625 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first prepolish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.

Abstract translation: 使用在线测量台处测量的第一预抛光厚度和第二预抛光厚度来确定第一基板的第一预期所需抛光时间与第二基板的第二预期所需抛光时间之间的差异。 基于第一预期所需抛光时间和第二预期所需抛光时间之间的差确定初始阶段的持续时间。 在抛光操作开始时的初始阶段，对第一基板和第二基板中的任一者施加压力的期望抛光时间较小，同时对第一基板和第二基板中的任一者施加压力 预计需要更长的抛光时间。 在初始阶段之后，对第一基板和第二基板施加压力。